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In the neuronal circuits of natural and artificial agents, memory is usually implemented with recurrent connections, since recurrence allows past agent state to affect the present, on-going behavior. Here, an interesting question arises in the context of evolution: how reactive agents could have evolved into cognitive ones with internalized memory? This study strives to find an answer to the question by simulating neuroevolution on artificial neural networks, with the hypothesis that internalization of external material interaction can be a plausible evolutionary path leading to a fully internalized memory system. A series of computational experiments were performed to gradually verify the above hypothesis. The first experiment demonstrated the possibility that external materials can be used as memory-aids for a memoryless reactive artificial agents in a simple 1-dimensional environment. Here, the reactive artificial agents used environmental markers as memory references to be successful in the ball-catching task that requires memory. Motivated by the result of the first experiment, an extended experiment was conducted to tackle a more complex memory problem using the same principle of external material interaction. This time, the reactive artificial agents are tasked to remember the locations of food items and the nest in a 2-dimensional environment. Such path-following behavior is a trivial foraging strategy of various lower animals such as ants and fish. The final experiment was designed to show the evolution of internal recurrence. In this experiment, I showed the evolutionary advantage of external material interaction by comparing the results from neural network topology evolution algorithms with and without the material interaction mechanism. The result confirmed that the agents with external material interaction learned to solve the memory task faster and more accurately. The results of the experiments provide insights on the possible evolutionary route to an internalized memory. The use of external material interaction can help reactive artificial agents to go beyond the functionality restricted by their simple network structure. Moreover, it allows much faster convergence with higher accuracy than the topological evolution of the artificial agents. These results suggest one plausible evolutionary path from reactive, through external material interaction, to recurrent structure.

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This study of commemoration of 9/11 on the 10th anniversary is performed at the intersection of public memory and rhetorical studies. Examining the role of the individual within public memory, this study furthers both fields by expanding on the definitions, processes, and negotiation between official and vernacular discourse. With a theoretical frame work that uses Foucault's concept of discursive archive, rhetors involved in the creation of public memory are framed as curators of a discursive archive of 9/11 memory. The role and limitations of the curatorial role is explored in three cases studies: a local ceremony, national newspapers, and Twitter hashtags. The study finds that there is a complicated interaction between vernacular and official memory and narrow definitions of the terms are not sufficient to describe the processes through which individuals take part in public memory. Rhetors involved in the public memory process may take on complex and ambiguous roles within the entangled discourses of official and vernacular memory. Within these case studies, individual curators crafted messages about the 10th anniversary of 9/11 that reify the importance of individuals tied to particular groups, urge for unity, and focus on the ten years since the tragedies.

Resistive Random Access Memory (RRAM) is considered as the most promising candidate for the next-generation nonvolatile memories due to their superior properties such as low operation voltage, fast operation speed, non-destructive read, simple metal-insulator-metal (MIM) sandwich structure, good scale-down ability. The main targets of this research are to clarify the corresponding physical mechanism, develop the potential material and structure of RRAM and stabilize the resistive switching characteristics, in which clarifying the physical mechanism will be the key factor for RRAM into production in the future. Recent research has suggested that variation of the low and high resistance states in RRAM could be caused due to the by instability in the formation and /disruption of the filament. In addition, the endurance and stability of RRAM may be related to the dissipation of oxygen ions in the switching layer. In this study, new material (Si Introduced) and structure (oxygen confined layer) are employed to improve RRAM performance and to clarify the physical mechanism. Furthermore, constant switching energy results can be used to select the optimal materials and structures also can be used to correctly allocate voltage and time to control RRAM. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN) which is offered from Industrial Technology Research Institute (ITRI). The switching process is proved as the formation/disruption of the filament. Furthermore, the dynamic switching behaviors during reset procedure in RRAM were analyzed by the sequential experimental design to illustrate the procedure of atomic quantized reaction at the ultra-cryogenic temperature.

The SRAM memory generator in this thesis is divided into four parts: row decoder, storage cell, column decoder, and sense amplifier & write controller. The row decoder is designed using pass-transistors logic with better area and regularity compared with conventional NAND based decoders. Two different column decoders, tree structure and NOR based predecoder, are provided in current version. Although only SRAM is implemented in this thesis, the memory generator platform is complete with all the necessary models required in the embedded design. In the future, other memories, such as cache, shift register, FIFO, stacks, ROM, register files, and content addressable memory, can be integrated in this memory generator platform.

Thesis (Ph. D.)--University of Washington, 2000. / Vita. Includes bibliographical references (leaves 128-131).

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