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This dissertation describes the fabrication and integration of a thin film edge emitting laser (EEL) whose optical output is coupled into a polymer waveguide integrated onto the same electrical interconnection substrate. This embedded laser/waveguide structure is a fundamental building block toward the realization of planar lightwave circuits using embedded optical interconnections. The demonstration of a thin film laser integrated with a planar waveguide eliminates the need for either an external optical source coupled to the waveguide or a bump bonded optical source with a beam turning element to turn an optical beam into the waveguide. In this work, the wedge-induced facet cleaving (WFC) method is adapted to fabricate the thin film EELs. Bisbenzocyclobutene (BCB) polymers are used to fabricate channel waveguides, and thin film lasers are integrated with the polymer waveguides. The coupling efficiency from the laser to the polymer waveguide is estimated through measurement and theoretically calculated. In the theoretical calculation, the thin film transfer matrix method is used to analyze the optical modes in the semiconductor cavity. The coupling efficiency from the laser to the polymer waveguide is analyzed using a finite element method (FEM), and are then compared to the experimental results. The experimentally estimated coupling efficiency is in good agreement with that of the theoretical calculation. In addition, the relationship between threshold current, output power, and facet reflectivity of the thin film laser is analyzed using FEM.

This thesis used TCSPC (Time-Correlated Single Photon Counting) apparatus to study the time-resolve photoluminescence (TRPL) of InGaN multi-quantum-well light emission diode and the photoluminescence of Zn1-xMgxSe properties at different Mg concentration. We obtained the activation energy form Arrhenius Plot, internal quantum efficiency (IQE), the radiative lifetime, and the radiative recombination critical at 180K of In0.25Ga0.75N multi-quantum well LED. Furthermore, the variation of PL peak location and FWHM with Mg concentration of Zn1-xMgxSe thin film with x=0.1¡B0.25¡B0.34¡B0.37¡B0.4¡B0.42 are observed.

[pt] No presente trabalho de tese, se faz uma avaliação de moduladores de amplitude baseados no efeito de electro-absorção. As estruturas usadas para a fabricação dos dispositivos foram estruturas com poços quânticos múltiplos de InAlAs/InGaAs e AlGaAs/GaAs. As estruturas de InAlAs/InGaAs foram projetadas para trabalhar na faixa comercial das telecomunicações (1.55 µm). Por isto a importância de aperfeiçoar os parâmetros de desempenho do dispositivo, tais como Stark shift, chirp, razão de contraste, perda por inserção, entre outros. Um estudo sistemático prévio destas estruturas foi realizado por Pires [Pires,1998]. Ele propõe variar a concentração de gálio na liga para produzir uma leve tensão na estrutura e modificar desta forma as propriedades ópticas do material. O estudo de [Pires,1998] propôs uma faixa de valores para variar a concentração de gálio (entre 46 por cento e 52 por cento) onde pode ser encontrada a melhor condição de operação do dispositivo. Cabe a esta tese aprofundar o estudo nesta faixa de valores, e decidir os parâmetros mais adequados para operação. No referente às estruturas de AlGaAs/GaAs, se toma como partida uma proposta teórica de [Batty et al, 1993], e estudada posteriormente por [Tribuzy, 2001], onde se sugere usar finas camadas de dopagem delta nos poços de GaAs para melhorar o deslocamento Stark em 87% para um campo aplicado de 40 kV/cm. O dispositivo foi desenhado e fabricado, obtendo-se um valor de 78 por cento para o mesmo campo aplicado, resultado relevante, pois é a verificação experimental de uma proposta teórica. / [en] In this thesis work, is made an evaluation of modulators of amplitude based in the electrum-absorption effect. The structures used for the devices were multiple quantum wells of InAlAs/InGaAs and AlGaAs/GaAs. The structures of InAlAs/InGaAs are used to work in the commercial band of the telecommunications (1,55 µm). This is the reason it is important to optimize the parameters of performance of the device, such as the Stark shift, chirp, contrast reason, insertion loss, etc. Previously, a systematic study of these structures was made by [Pires, 1998], the gallium concentration was varied to produce a strain in the structure and to modify the optic properties of the material. In the study of [Pires, 1998] considered the Gallium concentration was varied between 46 percent and 52 percent in which range the best condition to operate the device can be found. This is part of the work here presented. In this thesis this range of values was studied in more detail. For the structures of AlGaAs/GaAs, a theoretical proposal of [Batty et al, 1993] was experimentally investigated. It was suggested a nipi structure to use a fine delta doped in the GaAs wells, this delta doped will improve in 87 percent the Stark shift for a field of 40 KV/cm. The device was simulated and manufactured, obtaining a value of 78 percent for the same field applied, this is a excellent result, because this confirm the theoretical prediction.

Les diodes électroluminescentes (DEL) à base de GaN ont déjà été commercialisées comme solution économique d’éclairage, étant donné que les multi-puits quantiques (MQW) basés sur InGaN/GaN peuvent être conçus pour produire de la lumière dans toute la gamme spectrale visible. Pour obtenir une émission de lumière blanche, la conversion à base de phosphore conduit à une faible efficacité due à la perte de Stokes et peut également produire un faible indice de rendu des couleurs (IRC). Par conséquent, pour une efficacité élevée et une lumière blanche avec un IRC élevé, la génération de lumière blanche par combinaison rouges-vertes-bleues (RGB) est nécessaire. La DEL bleue basée sur InGaN/GaN présente une bonne performance aujourd'hui. La DEL rouge à base de III-phosphure est également très efficace. Cependant, avec des longueurs d'onde intermédiaires pour l'émission de spectre vert, l'efficacité des dispositifs diminue avec l'augmentation de la composition d’indium (In) dans la région active à cause de l'épitaxie selon la direction de GaN communément utilisée (0001-Ga). Ce «green-gap» est le principal obstacle pour obtenir une DEL blanche sans phosphore. Les structures DEL non ou semi-polaires pourraient être une solution pour réduire ou omettre le problème de polarisation, cependant, une croissance plus facile de bonne qualité cristalline avec moins d'étapes de fabrication font que la croissance de la direction (0001-Ga) est toujours commercialement prometteuse. Par conséquent, une conception de structure optimisée pour atténuer la polarisation et augmenter l'émission optique provenant d'hétéro-structures élaborées dans cette direction de croissance est toujours demandée. Les structures de DEL classiques multi-puits quantiques (MQW) InGaN/GaN sont développées sur une template GaN et utilisent du GaN comme couches barrières. Cependant, notre objectif a été de faire croître des MQW à contenu élevé avec des barrières InGaN sur une nouvelle template InGaN appelé «semi-bulk» (SB). La réalisation de la thèse est de simuler, décroître par épitaxie en phase vapeur organométallique (MOVPE) et de fabriquer la structure de DELs à haute teneur en In dans les barrières MQW avec InGaN, crues sur une template InGaN «semi-bulk» de haute qualité, et qui émettent dans le spectre du bleu au vert / GaN-based light-emitting diodes (LEDs) have already been commercialized for solid-state lighting, since the InGaN/GaN-based multi-quantum-well (MQW) of LEDs can be designed to produce light in the entire visible spectral range. To obtain white LED, phosphor-based down-conversion results in low efficiency due to Stokes loss and also can yield low colour rendering index (CRI). Hence, for highly efficient and with high CRI white light, generation of white light by monolithic red-green-blue (RGB) combination is necessary. InGaN/GaN-based blue LED has good performance now-a-days. III-phosphides based red LED has also achieved good efficiency. However, with intermediary wavelengths for green spectra emission, the efficiency of devices from epitaxy grown along the commonly used (0001-Ga) direction of GaN decreases with increasing indium (In) content in the active region and this “green-gap” is the main obstacle to get phosphor-free white LEDs. Non- or semi-polar LED structures could be a solution to reduce or omit the polarization problem, however, easier growth of good crystal quality and fewer processing steps make (0001-Ga) direction growth still commercially promising. Therefore, optimized structure design to alleviate polarization and enhance optical emission from hetero-structures grown along this direction growth is still in demand. The conventional InGaN multi-quantum-well (MQW) LED structures are grown on GaN buffer and use GaN as barrier layers. However, the objective of this thesis has been to grow high In-content MQWs with InGaN barriers on a novel so called “semi-bulk” (SB) InGaN buffer. The achievement of the thesis was to simulate, grow by metalorganic vapour phase epitaxy (MOVPE) and process LED structure with high In-content in the MQW with InGaN barriers, grown on high quality “semi-bulk” InGaN buffer, that will emit in the blue to green spectra. 70 nm thick high crystal quality InGaN SB buffer was obtained with 5% In-content. On top of this, In0.15Ga0.85N/In0.05Ga0.95N MQW was grown followed by 200 nm optimized p-GaN. The room temperature IQE was 67.5% at 460 nm emission wavelength. The processed LED chips yielded turn-on voltage less than 3 V with leakage current of ~10-3 A. In0.25Ga0.75N/ In0.05Ga0.95N MQW was also realized on InGaN SB with 7% In, with emission peak at ~530 nm

Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.