Thin films and nanowires of Co-Pt have been prepared by means of electrodeposition. Composition, structure, microstructure and magnetic properties have been intensively studied using X-ray diffraction, scanning electron microscopy and vibrating sample magnetometry and correlated to the deposition parameters such as electrolyte composition, deposition current and/or potential. Co rich Co-Pt films have been deposited at various current densities. A nearly constant composition of Co70Pt30 was achieved for current densities between 18 and 32 mA/cm². Detailed texture measurements confirmed an increasing fraction of the hexagonal phase with its c-axis aligned perpendicular to the film plane with increasing current density. Accordingly, magnetic properties are strongly affected by the magnetocrystalline anisotropy of the hexagonal phase that competes with the shape anisotropy of the thin film geometry. Co-Pt nanowires have been prepared within alumina templates at different deposition potentials between -0.6 and -0.9VSCE changing the composition from nearly pure Pt to Co. The composition Co80Pt20 was observed at a deposition potential of -0.7VSCE. Co-Pt nanowires are nanocrystalline in the as-deposited state. Magnetic measurements reveal changing fcc and hcp phase fractions within the wires as the effective anisotropy significantly differs from the expected shape anisotropy for nanowires with high aspect ratio. This change in effective anisotropy is attributed to the preferential alignment of the c-axis of hcp Co-Pt phase perpendicular to the nanowires axis. A promising alternative with much smaller feature sizes is the diblock copolymer template. Electrodeposition of Co and Co-Pt into these templates has been carried out. Inhomogeneities in the template thickness as well as a certain substrate roughness have been identified to be the reasons for inhomogeneous template filling. Thus magnetic properties are dominated by large deposits found on top of the template. Additionally, rolled-up tubes of several nm thick Au/Co/Au films have been characterized magnetically. Temperature dependent measurements show an exchange bias behaviour that is explained in terms of induced stresses during cooling. Changes of magnetic properties in the investigated samples are finally discussed in terms of competing effects of different magnetic anisotropies in various geometries. / Co-Pt Dünnschichten und Nanodrähte wurden mittels elektrochemischer Abscheidung hergestellt. Zusammensetzung, Struktur, Mikrostruktur und magnetische Eigenschaften wurden intensiv mit Röntgenbeugung, Rasterelektronenmikroskopie und Magnetometrie untersucht und mit den Depositionsparametern wie Elektrolytzusammensetzung, Abscheidestrom und/oder-potential korreliert. Co reiche Co-Pt-Filme wurden mit verschiedenen Stromdichten hergestellt. Eine nahezu konstante Zusammensetzung im Bereich Co70Pt30 wurde für Stromdichten zwischen 18 und 32 mA/cm² erreicht. Detaillierte Texturmessungen bestätigen einen zunehmenden Anteil an hexagonaler Phase mit senkrecht zur Filmebene ausgerichteter c-Achse mit zunehmender Stromdichte. Dementsprechend werden die magnetischen Eigenschaften stark von der magnetokristallinen Anisotropie der hexagonalen Phase beeinflusst, die mit der Formanisotropie der Dünnschicht-Geometrie konkurriert. Co-Pt-Nanodrähte wurden in nanoporöse Aluminiumoxidmembranen bei verschiedenen Potentialen zwischen -0,6 und -0.9 VSCE abgeschieden, wobei sich die Zusammensetzung von nahezu reinem Pt zu Co verändert. Die Zusammensetzung Co80Pt20 wurde bei einem Abscheidepotential von -0.7 VSCE erhalten. Die so hergestellten Co-Pt Nanodrähte sind nanokistallin. Magnetische Messungen weisen jedoch auf veränderte Phasenanteile der fcc und hcp Phase innerhalb der Drähte hin, da die effektive Anisotropie erheblich von der für Nanodrähte mit hohem Aspektverhältnis erwarteten Formanisotropie abweicht. Diese Änderung der effektiven Anisotropie ist auf die bevorzugte Ausrichtung der hexagonalen c-Achse des Co-Pt senkrecht zur Drahtachse zurückzuführen. Vielversprechende Template mit deutlich kleineren Dimensionen sind Diblockcopolymertemplate. Es wurden Versuche zur Abscheidung von Co und Co-Pt in diese Template durchgeführt. Als Gründe für die inhomogene Templatfüllung wurden Inhomogenitäten in der Schichtdicke sowie eine gewisse Rauhigkeit der Substrate identifiziert. Aufgrund der ungleichmäßigen Fülleg werden die magnetischen Eigenschaften durch große, halbkugelförmige Abscheidunge auf der Oberfläche des Templates bestimmt. Darüber hinaus wurden aus wenige nm dicken Au/Co/Au Filmen hergestellte Mikroröhren magnetisch charakterisiert. Temperaturabhängige Messungen zeigen ein Exchange Bias Verhalten, das durch beim Abkühlen induzierte Spannungen erklärt wird. Unterschiede im magnetischen Verhalten der untersuchten Proben werden abschließend im Hinblick auf die verschiedenen konkurrierenden magnetischen Anisotropien in verschiedenen Geometrien diskutiert.

Nanotechnology and nanoscience are experiencing rapid development in the last decade. Intensive research has been carried out on nanostructures synthesis and nanodevices fabrication. Due to its small size, a nanodevice usually requires an extremely small power to operate. However, to make the novel nanodevice work, an external power source is normally needed, which can either be a battery or a power source, thus, the size of the battery is usually much larger than that of the device and its life time is limited. It is highly desired to have a nanoscale size power source that harvests its energy from the environment so that it works independently and wirelessly to provide power to the nanodevices. This dissertation provides a solid solution to this dilemma based on nanotechnology. Starting from the synthesis of well aligned ZnO nanowire arrays on different substrates, an innovative method is presented first to measure the mechanical property of the as-synthesized ZnO nanowire arrays by using AFM without destroying and manipulating the sample. This technique is then extended to converte mechanical energy into electricity by scanning the nanowire arrays using a AFM tip in contact mode. Due to the unique semiconducting and piezoelectric dual properties of ZnO, mechanical energy is converted into electricity and is effectively output. This is the invention of the piezoelectric nanogenerator. Then, by replacing AFM tips using a zigzag top electrode, the first prototype direct-cirrent nanogenerator driven by ultrasonic wave has been fabricated. Further investigations have also been carried out about the effect of ZnO carrier density on the output power, and the power generating property of oligomer functionalized ZnO nanowires. This desertation established the fundamental mechanism for the nanogenerator, and it provides a new path towards self-powered nanosystems, which has key applications in in-vivo biosensing, MEMS, environmental mornitoring, defence technology and even personal electronics.

As the science and technology advance, people are looking for new discoveries to solve the existing problems and improve the quality of life. In this processes of development, nanoscience and nanotechnology have attracted technologists' attention and turned out to be one of the most promising technologies that could have a revolutionary impact. Znic Oxide (ZnO) nanostructures, in particular nanowires (NWs), have the potential to be one of such revolutionary material. ZnO is a piezoelectric, transparent and semiconducting material. With a direct band gap of 3.37eV and large excitation binding energy (60meV), ZnO exhibits near-UV emission, and transparent conductivity. ZnO NWs, with all of the properties of bulk ZnO, have other properties that are distinct to nanoscale material. All of these make ZnO NWs a very unique material that has many potential applications in system miniaturization. System-on-package (SOP) technology is a new concept developed to solve the integration problem in microelectronic industry. SOP technology paradigm provides system-level miniaturization in a package size that makes today's hand-held devices into multi-functional systems, with applications ranging from computing, wireless communications, health care to personal security. The SOP is a system miniaturization technology that ultimately integrates nanoscale thin film components for batteries, thermal structures, active and passive components in low cost organic packaging substrates, leading to micro to nanoscale modules and systems. The goal of this research is to investigate and utilize the unique properties of ZnO NWs and apply them to the fabrication of devices that can be integrated with SOP platform. The issues include developing techniques to manipulate and align ZnO NWs; developing contact preparation method to improve the contact conductance for the fabrication of ZnO NW based devices. Also, the investigation of the oxygen diffusion coefficient in ZnO NWs is carried out, which serves as the basis of ZnO NWs for sensing applications. Two practical applications, which include fabricating and characterizing SOP compatible ZnO NW based bio-sensor and SOP compatible ZnO NW based nano-generator, are evaluated. Finally the remaining work beyond the scope of the thesis is outlined.

Silicon nanowires are a nanostructure consisting of elongated crystals of silicon. Like many nanostructures, silicon nanowires have properties that change with size. In particular, silicon nanowires have a band-gap that is tuneable with the diameter of the nanowire. They tend to absorb a large portion of the light incident upon them and they form a highly textured surface when grown on an otherwise flat substrate. These properties indicate silicon nanowires are good candidates for use in solar cells. Nanostructured silicon, in the form of nanocrystalline silicon, has been used to produce thin film solar cells. Solar cells produced using silicon nanowires could combine the properties of the silicon nanowires with the low material costs and good stability of nanocrystalline based solar cells. This thesis describes the process of optimisation of silicon nanowire growth on a plasma enhanced chemical vapour deposition system. This optimised growth of silicon nanowires is then used to demonstrate a prototype solar cell using silicon nanowires and amorphous silicon. Several steps had to be accomplished to reach this goal. The growth of silicon nanowires was optimised through a number of steps to produce a high density film covering a substrate. Developments were made to the standard deposition technique and it was found that by using pulsed plasma enhanced chemical vapour deposition the density of nanowire growth could be improved. Of a range of catalysts trialled, gold and tin were found to be the most effective catalysts for the growth of silicon nanowires. A range of substrates was investigated and the nanowires were found to grow with high density on transparent conductive oxide coated glass substrates, which would allow light to reach the nanowires when they were used as part of a solar cell. The silicon nanowires were combined with doped and intrinsic amorphous silicon layers with the aim to create thin film photovoltaic devices. Several device designs using silicon nanowires were investigated. The variant that showed the highest efficiency used doped silicon nanowires as a p-layer which was coated with intrinsic and n-type amorphous silicon. By the characterisation and optimisation of the silicon nanowires, a prototype silicon nanowire solar cell was produced. The analysis of these prototype thin film devices, and the nanowires themselves, indicated that silicon nanowires are a promising material for photovoltaic applications.

[Truncated abstract] In this dissertation we present a theoretical study of electron transport through domain walls, with a particular focus on conductance properties, in order to understand various transport measurements that have been carried out recently on ferromagnetic nanowires. The starting point for our work is a ballistic treatment of transport through the domain wall. In this case conduction electrons are generally only weakly reflected by the domain wall, and the principal effect is a mixing of transmitted electron spins between up and down states. For small spin-splitting of conductance electrons the latter can be characterized by an appropriate adiabaticity parameter. We then incorporate the effect of spin-dependent scattering in the regions adjacent to the domain wall through a circuit model based on a generalization of the two-resistor theory of Valet and Fert. Within this model we find that the domain wall gives rise to an enhancement of resistance similar to the giant magnetoresistance effect found in ferromagnetic multilayer systems. The effect is largest in the limit of an abrupt wall, for which there is complete mistracking of spin, and decreases with increasing wall width due to the reduction of spin mistracking. For reasonable physical parameter values we find order-of-magnitude agreement with recent experiments. Going beyond the assumption of ballistic transport, we then consider the more realistic case of a domain wall subject to impurity scattering. A scattering matrix formalism is used to calculate conductance through a disordered region with either uniform magnetization or a domain wall. By combining either amplitudes or probabilities we are able to study both coherent and incoherent transport properties. The coherent case corresponds to elastic scattering by static defects, which is dominant at low temperatures, while the incoherent case provides a phenomenological description of the inelastic scattering present in real physical systems at room temperature. It is found that scattering from impurities increases the amount of spin mistracking of electrons travelling through a domain wall. This leads, in the incoherent case, to a reduction of conductance through the domain wall as compared to a uniformly magnetized region. In the coherent case, on the other hand, a reduction of weak localization and spin-reversing reflection amplitudes combine to give a positive contribution to domain wall conductance, which can lead to an overall enhancement of conductance due to the domain wall in the diffusive regime. A reduction of universal conductance fluctuations is found in a coherent disordered domain wall, which can be attributed to a decorrelation between spin-mixing and spin-conserving scattering amplitudes.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010. / Thesis presented in partial fulfilment of the requirements for the degree Master of Science in Engineering at the University of Stellenbosch / ENGLISH ABSTRACT: Measurement of pressure with zinc oxide (ZnO) nanowires was investigated. ZnO exhibits the piezoelectric effect, generating a voltage when pressure is applied to the material. This relationship between pressure and output voltage was used to make a pressure sensor. A study of the physical and mathematical working of the piezoelectric effect in ZnO nanowires was done. Simulations were conducted by means of specialised software to test the theory. The simulations gave results as the theory had predicted. ZnO nanowires were grown using various methods. Vapour liquid solid (VLS) was found to be the best method to grow uniform and dense arrays of ZnO nanowires. Statistical methods were employed to obtain the optimal parameters for the growth of ZnO nanowires through the VLS method. After the growth of the ZnO nanowires a pressure sensor was built. The manufacturing of the pressure sensor consisted of different steps. The sensors were tested to verify that they worked as described in theory and as shown in the simulations. The output voltage was lower than the simulated value due to imperfections and losses throughout the system. The output voltage versus applied pressure graphs did coincide with the bulk ZnO materials as well as related products, such as force sensing resistors. The output voltage is too low, but there are various methods by which the output voltage can be increased. These methods are discussed. The finished sensor can be used to continuously monitor pressure on a plane. / AFRIKAANSE OPSOMMING: Die meting van druk deur sink oksied (ZnO) nanodrade was ondersoek. ZnO toon die piëzo-elektriese effek - spanning word gegenereer wanneer druk op die materiaal aangewend word. Hierdie verhouding tussen druk en uitsetspanning is gebruik om ’n druksensor te vervaardig. ’n Studie van die fisiese en wiskundige werking van die piëzo-elektriese effek in ZnO nanodrade is gedoen. Simulasies deur middel van gespesialiseerde sagteware is uitgevoer om die teorie te bevestig. Die simulasies het resultate getoon soos deur die teorie beskryf word. ZnO nanodrade is gegroei deur verskillende metodes. Verdamping vloeistof vastestof (VVV) is as die beste metode gevind om uniforme en digte skikkings van ZnO nanodrade te kry. Statistiese metodes is aangewend om die optimale parameters vir die groei van ZnO nanodrade deur middel van die VVV metode te kry. Na afloop van die groei van die ZnO nanodrade is ’n druksensor vervaardig. Die vervaardigingsproses het uit verskillende stappe bestaan, ten einde die bou van ’n werkende druksensor uit die ZnO nanodrade te realiseer. Die sensors is getoets om te bevestig dat dit werk, soos beskryf deur die teorie en gewys in die simulasies. Die uitsetspanning was laer as wat verwag was as gevolg van onvolmaakthede en verliese in die hele stelsel. Die uitsetspanning teenoor druk grafieke van die sensor het ooreengestem met die van die grootmaat materiale, asook verwante produkte soos druk sensitiewe weerstande. Die uitset spanning is baie laag en daar bestaan verskillende maniere waarop die uitsetspanning verhoog kan word. Hierdie metodes word bespreek.

Usant de certaines conditions, la croissance épitaxiale de GaN sur un large panel de substrats donne lieu à une assemblée de nanofils. Cette géométrie filaire peut permettre la croissance d'hétérostructures libres de tous défauts cristallins étendus, ce qui les rendent attractives pour créer des dispositifs de hautes performances. En premier lieu, mon travail de thèse a visé à clarifier le mécanisme de nucléation auto-organisé des nanofils de GaN sur substrat de silicium. Dans ce but, une étude approfondie de la couche tampon d'AlN, déposée préalablement à la nucléation des nanofils, a été réalisée, mettant en évidence une inattendue forte réactivité de l'Al avec le substrat. La nécessité de la polarité azote pour la croissance des nanofils de GaN a été mise en lumière, bien que des nanofils contenant dans leur cœur un domaine de polarité Ga ont également été observés. Dans ces nanofils, une paroi d'inversion de domaine est présente et a été démontrée être optiquement active, exhibant une photoluminescence à 3.45 eV. Ensuite des hétérostuctures filaires GaN/AlN ont été synthétisée pour des caractérisations structurales et optiques. Il a été montré que le mode de croissance de l'hétérostructure peut être changé en fonction du diamètre du nanofil. En dernier lieu, en prenant avantage de la géométrie cylindrique des nanofils, des mesures de diffusion de porteurs de charge ont été réalisées dans des nanofils de GaN et d'AlN. / Using specific conditions, GaN can be epitaxially grown on a large variety of substrates as a nanowire (NW) array. This geometry allows the subsequent growth of wire-like heterostructures likely free of extended defects, which makes them promising for increasing device controllability and performance. First, my PhD work has been devoted to the understanding of self-organized nucleation of GaN NWs on silicon substrates. For this purpose, a deep characterization of the growth mechanism of the AlN buffer deposited prior to NW nucleation has been done, emphasizing an unexpected large reactivity of Al with the substrate. The requirement of the N polarity to nucleate GaN NWs has been evidenced, although the possible existence of NWs hosting a Ga polar core has been observed as well. In these NWs, an inversion domain boundary is present and has been demonstrated to be optically active, having a photoluminescence signature at 3.45 eV. Next, GaN/AlN wire heterostructures have been grown for structural and optical characterization. It has been shown that by changing the wire diameter, different growth mode for the heterostructure could be reached.At last, thanks to the cylindrical geometry of NWs, the measurement of diffusion length for charge carriers in GaN and AlN NWs have been performed.

Ce projet vise à développer de nouvelles encres à base de nanofils d’argent et de nanocellulose pour des applications conductrices et transparentes. Les nanocelluloses, nanoparticules issues de la cellulose, sont de deux types : les nanocristaux de cellulose (NCC) et les nanofibrilles de cellulose (NFC) et possèdent des propriétés bien spécifiques. Ce travail a consisté d’une part (i) à utiliser la forme tubulaire et rigide des NCC pour produire des nanotubes d’argents par synthèse chimique, avant leur formulation en encre et d’autre part (ii) à utiliser les propriétés d’enchevêtrement des NFC flexibles pour stabiliser des nanofils d’argent commerciaux, habituellement instables en suspension. Les divers résultats de ce projet ont permis d’aboutir à la formulation brevetée et à la commercialisation d’une encre conductrice à base d’une faible quantité d’argent et de NCC et de deux encres conductrices et transparentes à base de NFC et de nanofils d’argent. Les interactions physico-chimiques et la stabilité colloïdale de ces suspensions hybrides ont été étudiée de manière fondamentale, tout en développant des formulations adaptées à divers procédés d’impression, que ce soit à échelle laboratoire mais aussi industrielle. / This project aims at developing new conductive inks based on nanocellulose and silver nanowires for transparent and conductive applications. Nanocellulose are nanoparticles extracted from the cellulose and two kinds currently exist: the cellulose nanocrystals (CNC) and the cellulose nanofibrils (CNF). This project have evaluated on one hand the ability of using tubular rigid CNC as template for producing silver nanorods, prior their formulation into conductive inks. On the other hand, the ability of using flexible and entangled CNF to stabilize commercial silver nanowires, usually unstable in suspension, was investigated. The results of this project lead to the patented formulation and commercialization of one low silver content conductive ink based on silver and CNC and two conductive transparent ink based on CNF and silver nanowires. Physico-chemical interactions and colloidal stability of such hybrid suspension have been scientifically studied meanwhile printing process adapted formulation have been successfully designed and tested at laboratory scale but also industrial scale.

Le travail exposé dans cette thèse de doctorat présente des expériences à basse température dans le domaine de la spintronique quantique sur des hétérostructures à base de germanium. Tout d’abord, les avantages attendus du germaniumpour la spintronique quantique sont exposés, en particulier la faible interaction hyperfine et le fort couplage spin-orbite théoriquement prédits dans le Ge. Dans un second chapitre, la théorie des boites quantiques et systèmes à double boite sont détaillés, en se focalisant sur les concepts nécessaires à la compréhension des expériences décrites plus tard, c’est-à-dire les effets de charge dans les boites quantiques et double boites, ainsi que le blocage de spin de Pauli. Le troisième chapitre s’intéresse à l’interaction spin-orbite. Son origine ainsi que ses effets sur les diagrammes d’énergie de bande sont discutés. Ce chapitre se concentre ensuite sur les conséquences de l’interaction spin-orbite spécifiques aux gaz bidimensionnels de trous dans des hétérostructures de germanium, c’est-à-dire l’interaction spin-orbite Rashba, le mécanisme de relaxation de spin D’Yakonov-Perel ainsi que l’antilocalisation faible.Le chapitre quatre présente des mesures effectuées sur des nanofils coeur coquillede Ge/Si. Dans ces nanofils une boite quantique se forme naturellement et celui-ci est étudié. Un système à double boite quantiques est ensuite formé par utilisation de grilles électrostatiques, révélant ainsi du blocage de spin de Pauli.Dans le cinquième chapitre sont détaillés des mesures demagneto-conductance de gas de trous bidimensionnels dans des hétérostructures de Ge/SiGe contraints dont le puit quantique se situe à la surface. Ces mesuresmontrent de l’antilocalisation faible. Les temps de transport caractéristiques sont extraits ainsi que l’énergie de séparation des trous 2D par ajustement de courbe de la correction à la conductivité due à l’antilocalisation. De plus, les mesures montrent une suppression de l’antilocalisation par un champ magnétique parallèle au puit quantique. Cet effet est attribué à la rugosité de surface ainsi qu’à l’occupation virtuelle de sous-bandes inoccupées.Finalement, le chapitre six présente des mesures de quantisation de la conductancedans des hétérostructures de Ge/SiGe contraints dont le puit quantique est enterré. Tout d’abord, l’hétérostructure est caractérisée grâce à des mesures de magneto-conductance dans une barre de Hall. Ensuite, un second échantillon dessiné spécialement pour la réalisation de points de contact quantiques est mesuré. Celui-ci montre des marches de conductance. La dépendance en champ magnétique de ces marches est mesurée, permettant ainsi une extraction du facteur gyromagnétique de trous lourds dans du germanium. / This thesis focuses on low temperature experiments in germaniumbased heterostructure in the scope of quantumspintronic. First, theoretical advantages of Ge for quantum spintronic are detailed, specifically the low hyperfine interaction and strong spin orbit coupling expected in Ge. In a second chapter, the theory behind quantum dots and double dots systems is explained, focusing on the aspects necessary to understand the experiments described thereafter, that is to say charging effects in quantum dots and double dots and Pauli spin blockade. The third chapter focuses on spin orbit interaction. Its origin and its effect on energy band diagrams are detailed. This chapter then focuses on consequences of the spin orbit interaction specific to two dimensional germaniumheterostructure, that is to say Rashba spin orbit interaction, D’Yakonov Perel spin relaxation mechanism and weak antilocalization.In the fourth chapter are depicted experiments in Ge/Si core shell nanowires. In these nanowire, a quantumdot formnaturally due to contact Schottky barriers and is studied. By the use of electrostatic gates, a double dot system is formed and Pauli spin blockade is revealed.The fifth chapter reports magneto-transport measurements of a two-dimensional holegas in a strained Ge/SiGe heterostructure with the quantum well laying at the surface, revealing weak antilocalization. By fitting quantumcorrection to magneto-conductivity characteristic transport times and spin splitting energy of 2D holes are extracted. Additionally, suppression of weak antilocalization by amagnetic field parallel to the quantum well is reported and this effect is attributed to surface roughness and virtual occupation of unoccupied subbands.Finally, chapter number six reportsmeasurements of quantization of conductance in strained Ge/SiGe heterostructure with a buried quantumwell. First the heterostructure is characterized by means ofmagneto-conductance measurements in a Hall bar device. Then another device engineered specifically as a quantum point contact is measured and displays steps of conductance. Magnetic field dependance of these steps is measured and an estimation of the g-factor for heavy holes in germanium is extracted.