xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters--a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency. / Committee in charge: Stephen Kevan, Chairperson, Physics; Heiner Linke, Member, Physics; Roger Haydock, Member, Physics; Stephen Hsu, Member, Physics; David Johnson, Outside Member, Chemistry

Neste trabalho se realiza a síntese e caracterização de nanofios de óxido de zinco. Adicionalmente se apresenta o processo de montagem de um dispositivo para medidas elétricas deste material. Estuda-se complementarmente o efeito do tratamento de plasma sobre as propriedades de fotoluminescência do material. Nanofios foram sintetizados pelo mecanismo vapor-líquido-sólido (VLS), utilizando ouro como catalizador e safira c-plane como substrato. As amostras foram caracterizadas utilizando microscopia eletrônica de varredura, fotoluminescência a temperatura ambiente, difração de raios X, e microscopia eletrônica de transmissão. Os nanofios obtidos têm seção transversal com formato quase hexagonal, e larguras de aproximadamente 46 nm. O comprimento deles varia de 3 a 10 μm. Os resultados de difração de raios x e microscopia eletrônica de transmissão mostram que eles são monocristalinos com rede cristalina tipo wurtzita, e com direção de crescimento no eixo c. Foram estudados os efeitos da potência de plasma de oxigênio (O2) na fotoluminescência dos nanofios a temperatura ambiente. A diferença na fotoluminescência após diferentes tratamentos de plasma de O2 mostra que a razão entre a emissão da região do band gap e da banda do visível pode ser modificada pelo tratamento. Este efeito corrobora com a hipótese de que a banda verde de luminescência está relacionada às vacâncias de zinco. A variação percentual da razão entre as duas regiões apresenta uma dependência linear com a potência do plasma. / In this work, we performed the synthesis and characterization of zinc oxide nanowires. We also report an assembly process to measure the electrical properties of this material. We study the plasma treatment effect on the photoluminescence spectra of the nanowires. Nanowires were synthesized via vapor-liquid-solid mechanism, using gold as catalyst and c-plane sapphire as substrate. The samples were characterized using scanning electron microscopy, room temperature photoluminescence, x-rays diffraction and transmission electron microscopy. Our nanowires show a quasi-hexagonal cross section, with diameters of approximately 46 nm. Their lengths ranged from 3 to 10 μm. Our results show monocrystalline wurtzite crystal nanowires with c growth direction. We also study the plasma power effect of oxygen (O2) plasma treatment on the room temperature photoluminescence spectra of the nanowires. Our results show that the deep level emission to near band emission ratio decreases with the plasma treatment. This effect supports the hypothesis that claims the green band luminescence is related to the oxygen vacancies. Furthermore, the relative ratio change depends linearly on the plasma power.

Orientador: Prof. Dr. Alexandre José de Castro Lanfredi / Dissertação (mestrado) - Universidade Federal do ABC, Programa de Pós-Graduação em Nanociências e Materiais Avançados, 2016. / Este trabalho tem como objetivo o desenvolvimento de uma rota de sintese de nanofios supercondutores de alta temperatura critica de YBa2Cu3O7- (delta) pelo metodo de preenchimento de poro utilizando processo sol-gel. A preparacao do sol-gel foi realizada utilizando acetatos de itrio, bario e cobre como precursores e solubilizados em uma mistura de metanol, acido acetico e propanoico. O sol-gel foi depositado em membranas de policarbonato nanoporosas utilizadas como moldes para obtencao de amostras de nanofios. A fim de encontrar as condicoes de sintese, varios parametros foram estudados como a viscosidade da solucao precursora, temperatura e tempo de tratamento termico das amostras de nanofios de YBCO. Para esses estudos, as amostras foram caracterizadas por Microscopia Eletronica de Varredura (MEV), Difratometria de Raios X (DRX) e medidas de magnetizacao. Inicialmente, estudou-se o preenchimento da membrana porosa por sol-gel. Os nanofios de YBCO foram obtidos com a solucao precursora de viscosidade proxima a 100 mPa.s. Imagens de MEV mostraram a morfologia de nanofios com diametro da ordem de 100 nm. Estudos das condicoes de tratamento termico revelaram que as amostras de nanofios tratadas termicamente a temperatura de 800¿C por 4 h em atmosfera de oxigenio permitiu a obtencao de amostras de YBCO que mantiveram a morfologia nanofios. A formacao da fase ortorrombica do YBCO foi verificada por meio de difracao de raios X. Porem, a transicao supercondutora nessas amostras nao e bem definida e as propriedades magneticas sao menos intensas. Analises de DRX de amostras de nanofios tratadas termicamente a 800¿C por mais tempo, com patamar de oxigenacao a 400¿C, mostrou que ha presenca de fase YBa2Cu3O7-¿Â ortorrombica e de fases adicionais em maior proporcao. Isso tambem pode ser observado nas medidas magneticas dessas amostras. Por fim, resultados de difracao de raios X de amostras sinterizadas nas temperaturas de 850¿C e 900¿C por 4 horas em atmosfera de oxigenio revelaram a presenca predominante da fase YBCO. Ambas as amostras apresentaram a transicao supercondutora em Tc ~ 92 K na medida de magnetizacao versus temperatura. Porem, imagens de MEV dessas amostras revelaram que apenas aquela tratada termicamente a temperatura de 850¿C mantem a morfologia de nanofios com diametro medio de ~ 100 nm. Esta metodologia permitiu a obtencao de nanofios de YBCO, com caracteristicas estruturais e fisicas similares a obtida para o material na forma de bulk. / The aim of this work is to develop a synthetic route of high-Tc superconductor YBa2Cu3O7-ä nanowires by wet pore-filling method using sol-gel solution. Such sol-gel was prepared by yttrium, barium and copper acetates as precursors and solubilized in a mixture of methanol, acetic and propionic acids. The sol-gel solution was depositedon polycarbonate mesoporous membranes that were used as a template to obtain nanowire samples. In order to find an ideal synthesis condition, several synthesis parameters were studied, such as viscosity of precursor solution, temperature and time of heat treatment. Samples were characterized by Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and magnetic measurements. Firstly, we have studied porous membrane filled by a sol-gel solution. The YBCO nanowires were obtained by precursor solution with viscosity of 100 mPa.s. Through SEM images it was verified the Y-Ba-Cu nanowire morphology with external diameter of 100 nm. Experimental studies of heat treatment conditions revealed that nanowire samples can be obtained by sintered temperature at 800°C during 4 hours in oxygen atmosphere. The orthorhombic YBCO crystallographic phase was identified by X-ray diffraction. However, it was detected considerable broadening in the superconducting transition samples and low intensities of magnetic proprieties. Furthermore, the nanowires sintered at 800°C during long time with oxygenation step at 400°C exhibited the presence of orthorhombic YBa2Cu3O7-ä crystallographic phase and presence of secondary phases in more quantities. The magnetic measurements confirmed the presence of secondary phases in sample. Finally, XRD results of sintered samples at temperature range 850-900°C for 4 hours in oxygen atmosphere exhibit YBCO as the major phase. The magnetic measurements showed that both samples exhibit superconducting transition at Tc ~ 92 K. However, SEM images indicated that only the sample sintered at 850°C present nanowire morphology with average diameter of 100 nm. This methodology allowed the production of YBCO nanowires with structural characteristics and physical properties similar to the bulk samples.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / The ability to manipulate materials at the atomic scale turn it possible to look for materials at the nanoscale that can supersede the performance of their bulk counterparts in specific tasks. Nanowires, due to their unique structural characteristics, are natural candidates for electric or heat conducting devices. When these nanowires take part of a circuit, they can subjected to an external stress that can change their intrinsic properties. In this work, we will be studying the mechanical and electronic behavior of narrow InAs nanowires, with different diameters, when subjected to extreme external stress. Our calculations use the Density Functional Theory, and the local density approximation to the exchange and correlation potential, as implemented in the VASP code. Our results reveal that the InAs nanowires exhibit a mechanical behavior which depends on the external stress and the nanowire diameter. For the narrowest diameter, it shows an elastic behavior followed by the rupture of the wire. As the nanowires turn thicker, different responses to the external stress take place. When the first chemical bonds are broken, the nanowire changes between elastic behaviors with different Young modulus. When more and more chemical bonds are broken (for the thicker nanowires), the nanowires show a plastic behavior, before the rupture. For each of these mechanical regimes, the electronic band structure of the nanowires is also analysed. / Nanofios, devido às suas caracteristícas estruturais únicas, são candidatos naturais para dispositivos condutores de eletricidade e calor. Quando estes nanofios formam parte de um dispositivo, podem estar sujeitos a tensões externas que podem alterar as suas propriedades intrínsecas. Neste trabalho estudaremos o comportamento mecânico e eletrônico de nanofios de InAs com diferentes diâmetros quando sujeitos a tensões externas extremas. Nossos cálculos usam a Teoria do Funcional da Densidade dentro da aproximação da densidade local para o funcional de exchange e correlação, como implementado no código computacional VASP. Nossos resultados revelam que os nanofios de InAs exibem um comportamento mecânico que depende da tensão externa e do diâmetro do nanofio. Para o nanofio mais estreito, observa-se um comportamento elástico da curva de tensão vs elongação ( stress vs strain ), seguido de ruptura do fio. Quando os nanofios tornam-se mais espessos, diferentes respostas às tensões extremas são observadas. Quando as primeiras ligações químicas são quebradas, os nanofios mudam de regime elástico para outro, com diferentes valores de módulo de Young. Quando mais e mais ligações químicas são quebradas, sempre do centro para as bordas, os nanofios apresentam um comportamento plástico antes da ruptura. Para cada um destes regimes mecânicos estrutura de bandas dos nanofios é também analisada.

abstract: This dissertation aims to demonstrate a new approach to fabricating solar cells for spectrum-splitting photovoltaic systems with the potential to reduce their cost and complexity of manufacturing, called Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells. Single crystal semiconductor alloy nanowire (NW) ensembles are grown with the alloy composition and band gap changing continuously across a broad range over the surface of a single substrate in a single, inexpensive growth step by the Dual-Gradient Method. The nanowire ensembles then serve as the absorbing materials in a set of solar cells for spectrum-splitting photovoltaic systems. Preliminary design and simulation studies based on Anderson's model band line-ups were undertaken for CdPbS and InGaN alloys. Systems of six subcells obtained efficiencies in the 32-38% range for CdPbS and 34-40% for InGaN at 1-240 suns, though both materials systems require significant development before these results could be achieved experimentally. For an experimental demonstration, CdSSe was selected due to its availability. Proof-of-concept CdSSe nanowire ensemble solar cells with two subcells were fabricated simultaneously on one substrate. I-V characterization under 1 sun AM1.5G conditions yielded open-circuit voltages (V_oc) up to 307 and 173 mV and short-circuit current densities (J_sc) up to 0.091 and 0.974 mA/cm<super>2</super> for the CdS- and CdSe-rich cells, respectively. Similar thin film cells were also fabricated for comparison. The nanowire cells showed substantially higher V_oc than the film cells, which was attributed to higher material quality in the CdSSe absorber. I-V measurements were also conducted with optical filters to simulate a simple form of spectrum-splitting. The CdS-rich cells showed uniformly higher V_oc and fill factor (FF) than the CdSe-rich cells, as expected due to their larger band gaps. This suggested higher power density was produced by the CdS-rich cells on the single-nanowire level, which is the principal benefit of spectrum-splitting. These results constitute a proof-of-concept experimental demonstration of the MILAMB approach to fabricating multiple cells for spectrum-splitting photovoltaics. Future systems based on this approach could help to reduce the cost and complexity of manufacturing spectrum-splitting photovoltaic systems and offer a low cost alternative to multi-junction tandems for achieving high efficiencies. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2014

abstract: In mesoscopic physics, conductance fluctuations are a quantum interference phenomenon that comes from the phase interference of electron wave functions scattered by the impurity disorder. During the past few decades, conductance fluctuations have been studied in various materials including metals, semiconductors and graphene. Since the patterns of conductance fluctuations is related to the distributions and configurations of the impurity scatterers, each sample has its unique pattern of fluctuations, which is considered as a sample fingerprint. Thus, research on conductance fluctuations attracts attention worldwide for its importance in both fundamental physics and potential technical applications. Since early experimental measurements of conductance fluctuations showed that the amplitudes of the fluctuations are on order of a universal value (e2/h), theorists proposed the hypothesis of ergodicity, e.g. the amplitudes of the conductance fluctuations by varying impurity configurations is the same as that from varying the Fermi energy or varying the magnetic field. They also proposed the principle of universality; e.g., that the observed fluctuations would appear the same in all materials. Recently, transport experiments in graphene reveal a deviation of fluctuation amplitudes from those expected from ergodicity. Thus, in my thesis work, I have carried out numerical research on the conductance fluctuations in GaAs nanowires and graphene nanoribbons in order to examine whether or not the theoretical principles of universality and ergodicity hold. Finite difference methods are employed to study the conductance fluctuations in GaAs nanowires, but an atomic basis tight-binding model is used in calculations of graphene nanoribbons. Both short-range disorder and long-range disorder are considered in the simulations of graphene. A stabilized recursive scattering matrix technique is used to calculate the conductance. In particular, the dependence of the observed fluctuations on the amplitude of the disorder has been investigated. Finally, the root-mean-square values of the amplitude of conductance fluctuations are calculated as a basis with which to draw the appropriate conclusions. The results for Fermi energy sweeps and magnetic field sweeps are compared and effects of magnetic fields on the conductance fluctuations of Fermi energy sweeps are discussed for both GaAs nanowires and graphene nanoribbons. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2015

abstract: In this work, transport in nanowire materials and nanowire field effect transistors is studied using a full band Monte Carlo simulator within the tight binding basis. Chapter 1 is dedicated to the importance of nanowires and nanoscale devices in present day electronics and the necessity to use a computationally efficient tool to simulate transport in these devices. Chapter 2 discusses the calculation of the full band structure of nanowires based on an atomistic tight binding approach, particularly noting the use of the exact same tight binding parameters for bulk band structures as well as the nanowire band structures. Chapter 3 contains the scattering rate formula for deformation potential, polar optical phonon, ionized impurity and impact ionization scattering in nanowires using Fermi’s golden rule and the tight binding basis to describe the wave functions. A method to calculate the dielectric screening in 1D systems within the tight binding basis is also described. Importantly, the scattering rates of nanowires tends to the bulk scattering rates at high energies, enabling the use of the same parameter set that were fitted to bulk experimental data to be used in the simulation of nanowire transport. A robust and efficient method to model interband tunneling is discussed in chapter 4 and its importance in nanowire transport is highlighted. In chapter 5, energy relaxation of excited electrons is studied for free standing nanowires and cladded nanowires. Finally, in chapter 6, a full band Monte Carlo particle based solver is created which treats confinement in a full quantum way and the current voltage characteristics as well as the subthreshold swing and percentage of ballistic transport is analyzed for an In0.7Ga0.3As junctionless nanowire field effect transistor. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2016

abstract: Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed which creates 2-dimensional potential well for electrons. The nanowire is treated as a quasi-1D system in this work. A self-consistent 2D Schrödinger-Poisson solver is designed which determines the subband energies and the corresponding wavefunctions of the confined system. Three scattering mechanisms: acoustic phonon scattering, polar optical phonon scattering and piezoelectric scattering are considered to account for the electron phonon interactions in the system. Overlap integrals and 1D scattering rate expressions are derived for all the mechanisms listed. A generic one-dimensional Monte Carlo solver is also developed. Steady state results from the 1D Monte Carlo solver are extracted to determine the low field mobility of the GaN nanowires. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2017

L'évolution de la microélectronique est rythmée par l'augmentation constante du nombre de transistors intégrés dans chaque circuit grâce à la miniaturisation des dispositifs. Face à des coûts de fabrication et de développement de plus en plus élevés d'une part et à l'apparition de phénomènes parasites de plus en plus importants dans les dispositifs miniaturisés d'autre part, l'industrie se tourne progressivement vers l'intégration tridimensionnelle où les circuits sont empilés. La phase suivante de cette évolution pourra consister en la fabrication de circuits eux-mêmes tridimensionnels avec des composants répartis sur plusieurs niveaux. Dans ce contexte, la croissance catalysée de nanofils par CVD permet d'obtenir des structures cristallines en silicium sans relation d'épitaxie et de dimensions nanométriques sans photolithographie agressive. Nous avons utilisé ces propriétés pour la réalisation de démonstrateurs de capacités MOS et MIM ultra-denses de respectivement 22 µF/cm² et de 9 µF/cm² grâce à l'importante surface déployée par une assemblée de nanofils. Ces valeurs correspondent à des gains en surface appotée par les nanofils de 27,5 et de 16 pour les capacités MOS et MIM. Nous présentons dans ce travail de thèse, le dimensionnement, la fabrication et la caractérisation de ces dispositifs, depuis la croissance des nanofils jusqu'à l'obtention du démonstrateur complet. Nous nous sommes également intéressés aux principales briques technologiques de la fabrication de transistors verticaux à base de nanofils pour les niveaux d'interconnexion. Nous avons pour cela mis au point une technologie de croissance guidée de nanofils et étudié les qualités d'interface de l'empilement d'une grille déposé à basse température sur les nanofils. Cette étude s'appuie sur la comparaison des propriétés électriques de capacités MOS à base de nanofils obtenus par croissance catalysée avec les mêmes nanostructures obtenues par épitaxie sélective. Les nanofils catalysés présentent une très bonne qualité d'interface avec un empilement à base d'alumine et de nitrure de titane. Les technologies mises au point dans cette thèse ouvrent de nouvelles opportunités pour l'intégration tridimensionnelle au sein d'une même puce. / The main focus of microelectronic industry has been to increase the number of integrated transistors in each circuit thanks to the device miniaturization. However, due to the increasing manufacturing and development costs combined with the increase of parasitic phenomena in transistors when the dimensions decrease, the microelectronic industry is now focusing on the three-dimensional integration in which strategy, the circuits are stacked. The next step of this tendency will be able to consist in a component stacking inside the same three-dimensional circuit. In this context, the catalyzed CVD grown silicon nanowires are a very promising material since they can be grown with a crystalline structure without any epitaxial relationship. They can also have nanoscale dimensions without any aggressive photolithography step. We report in this thesis, the nanowire integration in high density MOS and MIM capacitors using the high developed surface of a nanowire assembly. This way, we have obtained capacitance densities of 22 µF/cm² and of 9 µF/cm² for MOS and MIM capacitors respectively. In this work, we present how the devices have been designed, fabricated and characterized from the nanowire growth to the complete devices. We have also studied the main steps of the nanowire integration MOS transistors for the interconnects. A guided nanowire growth process has been developed and the interface quality of a low temperature deposited gate stack has been investigated. This study is based on a comparison of MOS capacitor electrical performances between catalyzed and unanalyzed silicon nanowires obtained by selective epitaxial growth. The catalyzed nanowires show a very good interface quality with a gate stack composed of alumina and titanium nitride. The technologies developed in this thesis open new opportunities for the 3D integration of devices on the same chip.STAR

Ce travail de thèse porte sur l'étude optique de nanofils de GaN et de microcavités d'AlN contenant des boîtes quantiques de GaN. La largeur de raie de l'exciton lié au donneur neutre dans le spectre de photoluminescence des nanofils de GaN crûs par épitaxie par jets moléculaires met en evidence l'homogénéité des contraintes dans le matériau. S'ils ne présentent aucun confinement excitonique, la géométrie filaire permet une relaxation efficace des contraintes et permet d'étudier précisément le bord de bande du GaN relaxé en phase cubique. Par ailleurs, nous infirmons l'attribution de la transition à 3.45 eV observée dans le spectre des nanofils de GaN wurtzite à un satellite à deux électrons. En effet, les règles de sélection de son dipôle, ainsi que son évolution sous champ magnétique intense, montrent que cette transition n'a pas les propriétés d'un satellite à deux électrons. Nous avons également étudié la spectroscopie de microdisques d'AlN contenant des boîtes quantiques de GaN. Des facteurs de qualité record pour les cavités en AlN ont été mesurés autour de 3 eV. Des nanocavités d'AlN contenues dans des guides d'onde unidimensionnels ont également été étudiées. L'attribution de chaque mode au guide d'onde ou à la cavité, prédite par des calculs préliminaires, est confirmée expérimentalement par une localisation différente. Ces structures donnent lieu à d'excellents facteurs de qualité, de 2300 à 3.45 eV, jusqu'à 4400 à 3.14 eV. Si le facteur de Purcell attendu est très élevé (autour de 100), nous n'avons pas réussi à observer l'effet Purcell. Ceci s'explique soit par l'instabilité des modes de cavité et de l'émission des boîtes quantiques sous exposition prolongée, soit par l'importance des recombinaisons non radiatives. Enfin, il apparaît que le frein principal à l'obtention de l'effet laser dans ces structures est l'important champ électrique interne, qui ralentit l'émission spontanée des boîtes quantiques. / This work focuses on the optical study of GaN nanowires and AlN microcavities containing GaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in the photoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain is homogeneous in the material. These nanowires do not exhibit any excitonic confinement, but the efficient strain relaxation allows to grow strain-free zinc-blende GaN nanowires and then to conduct fine spectroscopy on cubic GaN near band edge. Beside, we show that the tentative attribution of the recombination line at 3.45 eV in the spectrum of wurtzite GaN nanowires to a surface-enhanced two-electron satellite does not hold. Indeed, its dipole polarization selection rules and its evolution with intense applied magnetic field do not match that of a two-electron satellite. We also performed the spectroscopy of GaN/AlN quantum dot microdisks. Record quality factors for AlN cavities were measured around 3 eV. GaN/AlN quantum dot nanocavities embedded in photonic crystal waveguides were also investigated. The attribution of each mode either to the waveguide or to the cavity, predicted by calculations, is experimentally confirmed by a different light localization. These structures allow excellent quality factors to be reached, from 2300 at 3.45 eV, up to 4400 at 3.14 eV. Although the expected Purcell factor is very high (around 100), we did not manage to observe the Purcell effect. This originates either from an enhancement of non-radiative recombination channels or from an instability of both the cavity modes and the quantum dot emission under intense exposure. Finally, it appears that the main limiting factor to achieve lasing in these structures is the strong built-in electric field, which slows up the spontaneous emission rate of the quantum dots