The research field of conjugated polymers has grown due to the optical and electronic properties of the material, useful in applications such as solar cells and printed electronics, but also in biosensors and for interactions with biomolecules. In this thesis conjugated polymers have been used in two related topics; to detect conformational changes in proteins and to assemble the polymers with biomolecules into nanowires. Within biosensing, conjugated polymers have been used for detection of a wide range of biological events, such as DNA hybridization or enzymatic activity, utilizing both electronic and optical changes in the polymer. Here the focus has been to use the polymers as optical probes to discriminate between native and misfolded protein, as well as to follow the misfolding processes in vitro. The understanding and detection of protein misfolding, for example amyloid fibril formation, is a topic of growing importance. The misfolding process is strongly associated with several devastating diseases such as Alzheimer’s disease, Parkinson’s disease and Bovine Spongiform Encephalopathy (BSE). We have developed detection schemes for discrimination between proteins in the native or amyloid fibril state based on luminescent polythiophene derivatives. Through a synthesis strategy based on polymerization of trimer blocks rather than of monomers, polythiophene derivatives with higher optical signal specificity for amyloid-like fibrils were obtained. Self-assembly of nanowires containing conjugated polymers is a route to generate structures of unique opto-electrical characteristics without the need for tedious topdown processes. Biomolecules can have nanowire geometries of extraordinary aspect ratio and functionalities. The DNA molecule is the most well known and exploited of these. In this thesis work the more stable amyloid fibril has been used as a template to organize conjugated polymers. Luminescent, semi-conducting, conjugated polymers have been incorporated in and assembled onto amyloid fibrils. Using luminescence quenching we have demonstrated that the conjugated material can retain the electro-activity after the incorporation process. Furthermore, the amyloid fibril/conjugated polymer hybrid structures can be organized on surfaces by the means of molecular combing and soft lithography. In the process of generating self-assembled biomolecular nanowires functionalized with conjugated polymers, we have shown a new synthesis strategy for a water-soluble highly conducting polythiophene derivative. This material, PEDOT-S, has shown affinity for amyloid fibrils, but can also be very useful in conventional opto-electronic polymer-based devices.

Zinc oxide (ZnO) nanostructures, especially nanowires, have been one of the most important semiconductive materials used for photocatalysis due to their unique material properties and remarkable performance. In this project, vertically-aligned ZnO nanowires on glass substrate have been synthesized by using the facile hydrothermal methods with the help of pre-coated ZnO seeding layer. The crystalline structure, morphology and UV-Vis transmission spectra of the as-synthesized sample were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and Ultra-violet Visible (UV-Vis) Spectrophotometer. The photocatalytic activity of the sample was examined for the photocatalytic degradation of methyl orange (MO) as the test dye in aqueous solution under UV-A irradiation. The extent of direct hydrolysis of the MO dye under UV light without the photocatalysts was first measured to eliminate the possible contribution from the undesired variables to the overall efficiency. The effects of pH and initial concentration of the MO solution, as well as the nanowire growth time, on the photocatalytic efficiency have been investigated, in order to determine the optimal conditions for photocatalytic applications of ZnO nanowires in the industry. Furthermore, the reproducibility of the experimental methods used in this project was tested to ensure the reliability of the experimental results obtained; and the reusability of the prepared ZnO nanowire arrays were also evaluated to investigate the stability of the products for photocatalytic applications in a large scale. In addition, a micro-chamber based microfluidic device with integrated ZnO nanowire arrays has been fabricated and used for photodegradation studies of MO solution under continuous-flow conditions. As expected, the micro-chamber based approach exhibited much improved photodegradation efficiency as compared to the conventional method using bulk dye solution. The effects of the flow rate and chamber height of the microfluidic device have also been investigated in order to determine the optimal experimental conditions for photodegradation reactions in microfluidic devices.

One-dimensional and hierarchical nanostructures have acquired tremendous attention in the past decades due to their possible application. In spite of the rapid emergence of new morphologies, the underlying growth mechanism is still not well understood. The lack of effective p-type or n-type doping is another obstacle for many semiconducting nanomaterials. A deeper investigation into these structures and new methods to fabricate devices are of significant impact for nanoscience and nanotechnology. Motivated by a desire to understand the growth mechanism of nanostructures and investigate novel device fabrication method, the research described in this thesis carried out on the synthesis, characterization, and device fabrication of semiconducting nanostructures. The main focus of the research was on ZnO, SnO2, and Zn3P2 for their great capability for fundamental phenomena studying, promising applications in sensors and optoelectronics, and the potential generalization of results to other materials. Within this study the following goals have been achieved: 1) Improved understanding of polar-surface-induced growth mechanism in wurtzite-structured ZnO and generalization of this growth mechanism with the discovery and analysis of rutile ¨Cstructured SnO2, 2) observation of the significance of the transversal growth, which is usually ignored, in interpenetrative ZnO nanowires, 3) rational design and growth control over versatile nanostructures of ZnO and Zn3P2, and 4) conjunction of p-type Zn3P2 and n-type ZnO semiconducting nanostructures for device fabrications. The framework for the research is reviewed first in chapter 1. Chapter 2 gives the detailed experimental setup, synthesis procedure, and common growth mechanism for nanostructure growth. A detailed discussion on the growth of ZnO nanostructures in chapter 3 provides more insight into the polar-surface-induced growth, transversal growth, vapor-solid growth, and vapor-liquid-solid growth during the formation of nanostructures. Polar-surface-induced growth is also confirmed in the growth of SnO2 nanostructures, which is also included in chapter 2. Chapter 3 presents Zn3P2 nanostructures from the newly designed experiment setup and the device fabrication from ZnO and Zn3P2 crossed nanowires.

In this study, we synthesized amphiphilic block copolymer Poly(ethylene glycol)-b-Poly(£`-caprolactone) (PEO-b-PCL), and the mesoporous silica and phenolic were synthesized by using EISA (evaporation induced self-assembly) strategy. The mesoporous carbon also obtained after carbonization. After incorporating the precursors into the mesoporous channels through incipient wetness impregnation and further hydrogen reduction, 3D body-centered cubic (BCC) metal network/silica, metal nanowires/silica, metal/phenolic, and metal/carbon nanocomposites could be obtained. Moreover, metal replica was obtained through HF etching. Transmission electron microscope (TEM) and the small angle X-ray scattering (SAXS) patterns indicate that the parent ordered mesoporous structure was well-maintained during the synthesis process. The X-ray diffraction (XRD) and selected-area electron diffraction (SAED) demonstrate that Pd and Ag were reduced within the channels of mesoporous materials. The pore size distribution and BET surface area of mesoporous materials and metal/mesoporous materials composite were recorded by N2 isotherm adsorption-desorption experiment. In the future, we expect that the mesoporous metal and mesoporous nanocomposite with specific morphologies behave excellent performance in various applications, such as catalysis, gas sensors, nano electronic/optical devices and medical diagnosis.

Silicon is the most important semiconducting material for optoelectronics owing to its suitable and tunable physical properties. Even though there are several alternatives, silicon based solar cells are still the most widely produced and commercially feasible system. Extensive efforts have been spent in order to increase the efficiency and decrease the cost of these systems. The studies that do not focus on replacement of the semiconducting material, mostly concentrate on the developments that could be brought by nanotechnological approaches. In this aspect, utilization of silicon nanowires has been predicted to improve the efficiency of the silicon based solar cell technology. Moreover, besides solar cells, silicon nanowires have been investigated for many other electronic systems such as thermoelectrics, light emitting diodes, biological/chemical sensors, photodetectors and lithium ion v batteries. Therefore, production of silicon nanowires through a cost-effective and well controlled method could make important contributions to many fields. In this thesis, electroless etching method, which is a novel and solution based method enabling vertically aligned silicon nanowire array fabrication over large areas, is investigated. A detailed parametric study resulting in a full control over the resultant nanowire morphology is provided. The parameters affecting the structure have been determined as etching time, solution temperature, solution concentration, pressure and starting wafer characteristics. The results show that electroless etching method could replace the conventional silicon nanowire fabrication methods. It was shown that specific nanowire lengths for any application, can be obtained simply by adjusting the parameters of electroless etching system. One of the most crucial features of vertically aligned silicon nanowire arrays is their remarkable antireflective properties. The optical reflectivity measurements showed that 42% reflectivity of pristine polished silicon wafer decreases down to 1% following fabrication of silicon nanowire arrays on their surface. This unique characteristic reveals that these nanowires could be used as antireflective surfaces in solar cells. Moreover, it was determined that p-n heterojunctions that are formed by silicon nanowires, namely radial heterojunctions, would yield higher efficiencies compared to planar heterojunctions because of the dramatic increase in the charge carrier collection efficiency and orthogonal photon absorption. On this subject, n-type silicon nanowire arrays were fabricated by electroless etching followed by drop casting Poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS) organic layer on these nanowires as the complementary layer, forming the radial heterojunction. The energy conversion efficiency of silicon nanowire / PEDOT: PSS device was found as 5.30%, while planar silicon / PEDOT: PSS control device displayed only 0.62% efficiency. Developments and optimizations in both the electroless etching method and solar cell models could lead to important developments in photovoltaic industry.

ZnO is a promising semiconducting material for manufacturing optoelectronic devices. Its most important properties are its wide and direct band gap and its high electron-hole binding energy. Synthesis of ZnO in bulk and thin film form has been investigated intensively over recent decades. Likewise, nanomaterials have been in the point of focus for their different properties compared to their bulk form. The vastly increased ratio of surface area to volume and change in electronic properties with great reduction in particle size enable improved performance in conventional applications where their bulk counterparts have been used for decades. As a result of this trend, research on synthesis of ZnO nanowires and their incorporation in prototype optoelectronic devices has been intensive in recent years. Therefore, synthesis of ZnO nanowires in a cost effective way and understanding the factors influencing the ZnO nanowire growth is essential for contribution to ongoing research. V In this thesis, hydrothermal synthesis of ZnO nanowires, which is a solution based method enabling vertically aligned ZnO nanowire array fabrication over large areas, is investigated. In the first part of this thesis, the effect of using various zinc salts as zinc sources on ZnO nanowires is investigated by monitoring pH, temperature and light transmittance of growth solutions. In the second part, a detailed parametric study on the use of zinc acetate dihydrate salt is provided with regard to the existence of its unique properties compared to other two zinc salts. The effect of growth time, temperature, ratio of concentration of precursor chemicals and precursor chemical concentrations is investigated. The results show that hydrothermal synthesis method could replace the conventional ZnO nanowire fabrication methods. It was shown that specific nanowire lengths for any application can be obtained simply by adjusting the parameters of hydrothermal growth system.

Zinc oxide, with its direct wide bandgap and high exciton binding energy, is a promising material for optoelectronic devices. Quantum confinement effect and high surface to volume ratio of the nanowires imparts unique properties to them and makes them appealing for researchers. So far, zinc oxide nanowires have been used to fabricate various optoelectronic devices such as light emitting diodes, solar cells, sensors and photodetectors. To fabricate those optoelectronic devices, many different synthesis methods such as metal organic chemical vapor deposition, chemical vapor deposition, pulsed laser deposition, electrodeposition and hydrothermal method have been explored. Among them, hydrothermal method is the most feasible one in terms of simplicity and low cost. In this thesis, hydrothermal method was chosen to synthesize zinc oxide nanowires. Synthesized zinc oxide nanowires were then used as electrically active components in light emitting diodes and ultraviolet photodetectors. Hybrid light emitting diodes, composed of inorganic/organic hybrids are appealing due to their flexibility, lightweight nature and low cost production methods. Beside the zinc oxide nanowires, complementary poly [2- methoxy -5- (2- ethylhexyloxy) - 1,4 -phenylenevinylene] MEH-PPV and poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) hole conducting polymers were used to fabricate hybrid light emitting diodes in this work. Optoelectronic properties of the fabricated light emitting diodes were investigated. Zinc oxide emits light within a wide range in the visible region due to its near band edge and deep level emissions. Utilizing this property, violet-white light emitting diodes were fabricated and characterized. Moreover, to take advantage over the responsivity of zinc oxide to ultraviolet light, ultraviolet photodetectors utilizing hydrothermally grown zinc oxide nanowires were fabricated. Single walled carbon nanotube (SWNT) thin films were used as transparent electrodes for the photodetectors. Optoelectronic properties of the transparent and flexible devices were investigated. A high on-off current ratio around 260000 and low decay time about 16 seconds were obtained. Results obtained in this thesis reveal the great potential of the use of solution grown zinc oxide nanowires in various optoelectronic devices that are flexible and transparent.

Nanomaterials are widely investigated by researches and because of their unique properties they have been utilized in many different devices. Nanowires are one of these materials which show deviated mechanical, chemical, physical and optical, properties from their bulk counterparts. These deviations in properties of the nanowires are based on both their high surface to volume ratio and quantum confinement effect. Lately optical properties of nanowires have received great attention as they also exhibit good light sensitivity. Germanium is a semiconductor, which has been used widely as an active material in infrared light detectors. Due to excellent light detection of germanium its nanostructures have also been widely studied in optoelectronic devices. Germanium nanowires have been used in many devices such as field effect transistors, diodes, field emitters and photodetectors. Synthesis of high quality and high aspect ratio germanium nanowires could make important contributions to these devices. There are several synthesis methods for germanium nanowires. These are electrochemical etching, solvothermal, supercritical v fluidic, laser ablation, chemical vapor deposition and vapor transport methods. Among these methods, high quality, single crystalline, defect free germanium nanowires using accessible solid powder precursors could be synthesized with vapor transport method. In the first part of this thesis, germanium nanowire growth with vapor transport method is investigated. One of the most advantageous features of this method is using solid powder precursors instead of toxic gases. Until now, three different kinds of solid germanium precursors have been reported in vapor transport method, all of them are investigated and the resulting nanowires are compared in this thesis. Vapor transport method enables high control over the morphology of the nanowires. The most important parameters which affect the morphology of the nanowires are temperature, pressure and precursor type. Therefore, a detailed parametric study is provided based on these parameters and their effect on the final diameter of the nanowires is determined. The as &ndash / synthesized nanowires contain a very thick oxide layer on their surface. Therefore, oxide removal with acid etching is also investigated in this thesis. In the second part of this thesis, utilization of the germanium nanowire networks in fully transparent, flexible and network enhanced photodetectors is investigated. In order to obtain a germanium nanowire network, the as-synthesized nanowires are transferred from growth substrate to the device substrate by sonication and vacuum filtration. Silver nanowires and single walled carbon nanotubes are used as fully transparent electrodes. Both rigid and flexible photodetectors are fabricated and their current-voltage characteristics and photoresponse behaviors with different germanium nanowire densities are determined.

Oxide nanowire arrays are playing an important role in energy sciences nowadays, including energy harvesting, energy storage, and power management. By utilizing a wet chemical growth method, we demonstrated the capabilities of synthesizing density controlled vertical ZnO nanowire arrays on a general substrate, optimizing the aspect ratio of the vertical ZnO nanowire arrays guided by a statistical method, epitaxially growing patterned vertical ZnO nanowire arrays on inorganic substrates, epitaxially growing patterned horizontal ZnO nanowire arrays on non-polar ZnO substrates, and the lift-off of the horizontal ZnO nanowire arrays onto general flexible substrates. In addition, single crystalline PbZrxTi1-xO3 (PZT) nanowire arrays were epitaxially grown on conductive and nonconductive substrates by hydrothermal decomposition. Beyond that, based on the as-synthesized ZnO nanowire arrays, we demonstrated multilayered three dimensionally integrated direct current and alternating current nanogenerators. By integrating a ZnO nanowire based nanogenerator with a ZnO nanowire based nanosensor, we demonstrated solely ZnO nanowire based self-powered nanosystems. Also, utilizing a commercial full-wave bridge rectifier, we rectified the alternating output charges of the nanogenerator based on PZT nanowire arrays, and the rectified charges were stored into capacitors, which were later discharged to light up a laser diode (LD). In addition, blue/near-ultraviolet (UV) light emitting diodes (LED) composed of ordered ZnO nanowire arrays on p-GaN wafers were presented.

The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N2 atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter.