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Zinc oxide (ZnO) is perhaps one of the most widely studied material in the last two decades. It has received so much of attention because of its incredible potential for wide ranging applications. ZnO is a wide band gap semiconductor (Eg = 3.37 eV at 300 K) with a rather large excitonic binding energy (~60 meV). This combination of properties makes it an ideal choice for several optoelectronic devices that can easily work at room temperature. ZnO is a truly multifunctional material possessing several desirable electrical, optical, optoelectronic, and piezoelectric properties. In addition, it is highly amenable to production of various kinds of nanostructures such as nanorods, nanotubes, nanoribbons, nanoneedles, etc., which makes it even more desirable for nanoscale devices. Examples of ZnO based nanodevices could include photodiodes, photodetectors, nano-lasers, field-emission devices and memristors. In order to make such devices, one could need device quality nanostructures that must be reproducible and cost effective. Naturally, one has to look for a synthesis process that has great controls and is relatively inexpensive. The study provided here shows that among the various methods available for ZnO synthesis, the microwave-assisted chemical synthesis offers outstanding advantages in terms of rapid growth of nanostructures, economical use of energy and excellent controls of process parameters. In order to produce device quality ZnO nanostructures using microwave-assisted synthesis, one has to study the effect of various process parameters and optimise them for the desired growth. Therefore, in the current study, first, a systematic study was undertaken to synthesize ZnO nanostructures both in a aqueous and non-aqueous medium and their characterization was carried out in order to understand the effect of microwave power, time of irradiation, pressure, solvent and salt concentration, etc. The goal was to develop synthesis protocols for various kinds of nanostructures that could guarantee reproducibility, good yield, and device quality structures. This study has led to successful growth of ZnO nanostructures on various substrates, vertically aligned ZnO nanorods and templated arrays of desired structures, all with outstanding properties of the structures as confirmed by XRD, MicroRaman, photoluminescence, cathodoluminescence, FESEM, TEM, PFM studies and pole figure analysis. Piezoelectric force microscopy (PFM) and physical property measurement system (PPMS, Quantum Design), have been used to study the multifunctional properties of ZnO nanostructures. The PFM is a powerful technique to measure the local piezoelectric coefficient of nanostructures and nanoscale thin films. PFM works on the converse piezoelectric effect in which electric potential is applied and mechanical strain is measured using a cantilever deflection. The PFM (Brucker’s AFM dimension Scan Assist) was used to characterize individual ZnO nanorods. Extensive studies were carried out with PFM measurements and it was observed that the nanorods consistently showed high piezoelectric coupling coefficients (d33~50-154 pm/V). It was also found that the variation in d33 depended on morphology and size of nanostructure. The multifunctional properties were observed in small ZnO nanocrystals (NCs). Such high values of piezoelectric coupling coefficients open the door for novel ZnO based nanoscale sensors and actuators. The synthesized ZnO nanostructures were further optimized and characterized keeping in view three device applications namely Field emission, Memristors and Gas Sensors. The fabrication and characterization of these three devices with ZnO nanostructure was carried out using electron beam lithography and direct laser writing micromachining. Device fabrication using lithography involved several steps such as substrate cleaning, photoresist spin coating, pre-baking, post-baking, pattern writing, developing, sputtering/deposition of material for lift-off, ZnO growth, and overlay lithography. For field emission devices, high quality, well aligned, c-axis oriented ZnO nano-needles were grown on sputter coated Ti/Pt (20nm/100nm) on SiO2/Si substrate by rapid microwave-assisted method in aqueous medium. The diameter of the tip was found to be 1~2 nm and the length of the rod was approximately 3~5μm. For a particular batch the tip size, morphology, and lengths were found to be the same and highly repeatable. Pole figure analysis revealed that nanorods were highly oriented towards <002> direction. Field-emission measurements using the ZnO nanoneedles arrays as cathode showed very low turn-on electric field of 0.9 V/μm and a very high field enhancement factor ~ 20200. Such a high emission current density, low turn-on electric field, and high field enhancement factor are attributed to the high aspect ratio, narrow tip size, high quality and single crystallinity of the nanoneedles. The high emission current density, high stability, low threshold electric field (0.95 V/μm) and low turn-on field make the ZnO nanoneedle arrays one of the ideal candidates for field-emission displays and field emission sensors. In the suitability of ZnO nanostructures for memristor application it was found that the single crystalline ZnO nanorods were not suitable as they did not show memristive behaviour but the ZnO nanorods with native defects exhibited considerable memristive behaviour. Therefore the microwave-assisted grown ZnO nanorods with defects were used to fabricate memristive devices. Single and multiple ZnO nanorods based memristors were fabricated using electron beam lithography. These devices were characterized electrically by measuring the hysteresis in the I/V characteristics. A high degree of repeatability has been established in terms of growth, device fabrication, and measurements. The switching in single nanorod based devices was found to have “ON-to- OFF” resistance ratio of approximately 104 and current switching ratio (ION/IOFF) of 106. Gas sensing based on electrical resistance change depends on absorption and desorption rate of gases on the analyte which is governed by surface properties, morphologies and activation energy. Therefore, various morphologies of nanostructure were grown for gas sensing application. Through experimentation, the emphasis shifted to c-axis oriented ZnO nanostructures on SiO2 substrate for gas sensing. The c-axis orientation of ZnO nanostructures was preferred mainly due to its huge surface area. The measurements showed that the c-axis oriented ZnO nanorods were excellent hydrogen sensors, able to detect H2 as low concentration as 2 ppm, even when the sensing temperature is as low as 200 ˚C. However, oxygen sensing was achieved at a higher temperature (300 ˚C). Thus, the study undertaken in this thesis presents a microwave based rapid and economical method for synthesizing high quality, device grade ZnO nanostructures, their extensive characterization that shows the multifunctional properties of these structures, and there examples of varied device applications of the synthesized nanostructures as field emitters, memristors, and gas sensors.

Recently, the proposal to use voltage amplification from ferroelectric negative capacitance (NC) to reduce the power dissipation in nanoelectronic devices has attracted significant attention. Homogeneous Landau theory predicts, that by connecting a ferroelectric in series with a dielectric capacitor, a hysteresis-free NC state can be stabilized in the ferroelectric below a critical film thickness. However, there is a strong discrepancy between experimental results and the current theory. Here, we present a comprehensive revision of the theory of NC stabilization with respect to scaling of material and device dimensions based on multi-domain Ginzburg–Landau theory. It is shown that the use of a metal layer in between the ferroelectric and the dielectric will inherently destabilize NC due to domain formation. However, even without this metal layer, domain formation can reduce the critical ferroelectric thickness considerably, limiting not only the range of NC stabilization, but also the maximum amplification attainable. To overcome these obstacles, the downscaling of lateral device dimensions is proposed as a way to prevent domain formation and to enhance the voltage amplification due to NC. These insights will be crucial for future NC device design and scaling towards nanoscale dimensions.

Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology. Hafnium dioxide (HfO2) is the most promising high-κ material because of its excellent chemical, thermal, mechanical and dielectric properties and also possesses good thermodynamic stability and better band offsets with silicon. Hence, HfO2 has already been used as gate dielectric in modern CMOS devices. For future technologies, it is very difficult to scale the silicon transistor gate length, so it is a necessary requirement of replacing the channel material from silicon to some high mobility material. Two-dimensional layered materials such as graphene and molybdenum disulfide (MoS2) are potential candidates to replace silicon. Due to its planar structure and atomically thin nature, they suit well with the conventional MOSFET technology and are very stable mechanically as well as chemically. HfO2 plays a vital role as a gate dielectric, not only in silicon CMOS technology but also in future nano-electronic devices such as graphene/MoS2 based devices, since high-κ media is expected to screen the charged impurities located in the vicinity of channel material, which results in enhancement of carrier mobility. So, for sustenance and enhancement of new technology, extensive study of the functional materials and its processing is required. In the present work, optimization of HfO2 thin films for gate dielectric applications in Nano-electronic devices using electron beam evaporation is discussed. HfO2 thin films have been optimized in two different thickness regimes, (i) about 35 nm physical thicknesses for back gate oxide graphene/MoS2 transistors and (ii) about 5 nm physical thickness to get Equivalent Oxide Thickness (EOT) less than 1 nm for top gate applications. Optical, chemical, compositional, structural and electrical characterizations of these films have been done using Ellipsometry, X-ray Photoelectron Spectroscopy (XPS), Rutherford Back Scattering (RBS), X-ray Diffraction (XRD), Capacitance-Voltage and Current-Voltage characterization techniques. The amount of O2 flow rate, during evaporation is optimized for 35 nm thick HfO2 films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O2 flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post deposition annealing (PDA) and post metallization annealing (PMA) in forming gas ambient (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O2 flow rate shows the best properties as measured on MOS capacitors. A high density film (ρ=8.2 gram/cm3, 85% of bulk density) with high dielectric constant of κ=19 and leakage current density of J=2.0×10-6 A/cm2 at -1 MV/cm has been achieved at optimized deposition conditions. Bilayer graphene on HfO2/Si substrate has been successfully identified and also transistor has been fabricated with HfO2 (35 nm) as a back gate. High transconductance compared to other back gated devices such as SiO2/Si and Al2O3/Si and high mobility have been achieved. The performance of back gated bilayer graphene transistors on HfO2 films deposited at two O2 flow rates of 3 SCCM and 20 SCCM has been evaluated. It is found that the device on the film deposited at 3 SCCM O2 flow rate shows better properties. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. MoS2 layers on the optimized HfO2/Si substrate have been successfully identified and transistor has been fabricated with HfO2 (32 nm) as a back gate. The device is switching at lower voltages compared to SiO2 back gated devices with high ION/IOFF ratio (>106). The effect of film thickness on optical, structural, compositional and electrical properties for top gate applications has been studied. Also the effect of gate electrode material and its processing on electrical properties of MOS capacitors have been studied. EOT of 1.2 nm with leakage current density of 1×10-4 A/cm2 at -1V has been achieved.