Encrypted data transmission is becoming increasingly more important as information security is vital to modern communication networks. Quantum Key Distribution (QKD) is a promising method based on the quantum properties of light to generate and distribute unconditionally secure keys for use in classical data encryption. Significant progress has been achieved in the performance of QKD point-to-point transmission over a fibre link between two users. The transmission distance has exceeded several hundred kilometres of optical fibre in recent years, and the secure bit rate achievable has reached megabits per second, making QKD applicable for metro networks. To realize quantum encrypted data transmission over metro networks, quantum keys need to be regularly distributed and shared between multiple end users. Optical switching has been shown to be a promising technique for cost-effective QKD networking, enabling the dynamic reconfiguration of transmission paths with low insertion loss. In this thesis, the performance of optically switched multi-user QKD systems are studied using a mathematical model in terms of transmission distance and secure key rates. The crosstalk and loss limitations are first investigated theoretically and then experimentally. The experiment and simulation both show that negligible system penalties are observed with crosstalk of -20 dB or below. A practical quantum-safe metro network solution is then reported, integrating optically-switched QKD systems with high speed reconfigurability to protect classical network traffic. Quantum signals are routed by rapid optical switches between any two endpoints or network nodes via reconfigurable connections. Proof-of-concept experiments with commercial QKD systems are conducted. Secure keys are continuously shared between virtualised Alice-Bob pairs over effective transmission distances of 30 km, 31.7 km, 33.1 km and 44.6 km. The quantum bit error rates (QBER) for the four paths are proportional to the channel losses with values between 2.6% and 4.1%. Optimising the reconciliation and clock distribution architecture is predicted to result in an estimated maximum system reconfiguration time of 20 s, far shorter than previously demonstrated. In addition, Continuous Variable (CV) QKD has attracted much research interest in recent years, due to its compatibility with standard telecommunication techniques and relatively low cost in practical implementation. A wide band balanced homodyne detection system built from modified off-the-shelf components is experimentally demonstrated. Practical limits and benefits for high speed CVQKD key transmission are demonstrated based on an analysis of noise performance. The feasibility of an optically switched CV-QKD is also experimentally demonstrated using two virtualised Alice-Bob pairs for the first time. This work represents significant advances towards the deployment of CVQKD in a practical quantum-safe metro network. A method of using the classical equalization technique for Inter-symbol-interference mitigation in CVQKD detection is also presented and investigated. This will encourage further research to explore the applications of classical communication tools in quantum communications.

The scalability and cost of microelectromechanical systems (MEMS) optical switches are now the important factors driving the development of MEMS optical switches technology. The employment of MEMS in the design and fabrication of optical switches through the use of micromachining fabricated micromirrors expands the capability and integrity of optical backbone networks. The focus of this dissertation is on the design, fabrication, and implementation of a new type of MEMS optical switch that combines the advantages of both 2-D and 3-D MEMS switch architectures. This research presents a new digital MEMS switch architecture for 1×N and N×N optical switches. The architecture is based on a new microassembled smart 3-D rotating inclined micromirror (3DRIM). The 3DRIM is the key device in the new switch architectures. The 3DRIM was constructed through a microassembly process using a passive microgripper, key, and inter-lock (PMKIL) assembly system. An electrostatic micromotor was chosen as the actuator for the 3DRIM since it offers continuous rotation as well as small, precise step motions with excellent repeatability that can achieve repeatable alignment with minimum optical insertion loss between the input and output ports of the switch. In the first 3DRIM prototype, a 200×280 microns micromirror was assembled on the top of the electrostatic micromotor and was supported through two vertical support posts. The assembly technique was then modified so that the second prototype can support micromirrors with dimensions up to 400×400 microns. Both prototypes of the 3DRIM are rigid and stable during operation. Also, rotor pole shaping (RPS) design technique was introduced to optimally reshape the physical dimensions of the rotor pole in order to maximize the generated motive torque of the micromotor and minimize the required driving voltage signal. The targeted performance of the 3DRIM was achieved after several PolyMUMPs fabrication runs. The new switch architecture is neither 2-D nor 3-D. Since it is composed of two layers, it can be considered 2.5-D. The new switch overcomes many of the limitations of current traditional 2-D MEMS switches, such as limited scalability and large variations in the insertion loss across output ports. The 1×N MEMS switch fabric has the advantage of being digitally operated. It uses only one 3DRIM to switch the light signal from the input port to any output port. The symmetry employed in the switch design gives it the ability to incorporate a large number of output ports with uniform insertion losses over all output channels, which is not possible with any available 2-D or 3-D MEMS switch architectures. The second switch that employs the 3DRIM is an N×N optical cross-connect (OXC) switch. The design of an N×N OXC uses only 2N of the 3DRIM, which is significantly smaller than the N×N switching micromirrors used in 2-D MEMS architecture. The new N×N architecture is useful for a medium-sized OXC and is simpler than 3-D architecture. A natural extension of the 3DRIM will be to extend its application into more complex optical signal processing, i.e., wavelength-selective switch. A grating structures have been selected to explore the selectivity of the switch. For this reason, we proposed that the surface of the micromirror being replaced by a suitable gratings instead of the flat reflective surface. Thus, this research has developed a rigorous formulation of the electromagnetic scattered near-field from a general-shaped finite gratings in a perfect conducting plane. The formulation utilizes a Fourier-transform representation of the scattered field for the rapid convergence in the upper half-space and the staircase approximation to represent the field in the general-shaped groove. This method provides a solution for the scattered near-field from the groove and hence is considered an essential design tool for near-field manipulation in optical devices. Furthermore, it is applicable for multiple grooves with different profiles and different spacings. Each groove can be filled with an arbitrary material and can take any cross-sectional profile, yet the solution is rigorous because of the rigorous formulations of the fields in the upper-half space and the groove reigns. The efficient formulation of the coefficient matrix results in a banded-matrix form for an efficient and time-saving solution.

The scalability and cost of microelectromechanical systems (MEMS) optical switches are now the important factors driving the development of MEMS optical switches technology. The employment of MEMS in the design and fabrication of optical switches through the use of micromachining fabricated micromirrors expands the capability and integrity of optical backbone networks. The focus of this dissertation is on the design, fabrication, and implementation of a new type of MEMS optical switch that combines the advantages of both 2-D and 3-D MEMS switch architectures. This research presents a new digital MEMS switch architecture for 1×N and N×N optical switches. The architecture is based on a new microassembled smart 3-D rotating inclined micromirror (3DRIM). The 3DRIM is the key device in the new switch architectures. The 3DRIM was constructed through a microassembly process using a passive microgripper, key, and inter-lock (PMKIL) assembly system. An electrostatic micromotor was chosen as the actuator for the 3DRIM since it offers continuous rotation as well as small, precise step motions with excellent repeatability that can achieve repeatable alignment with minimum optical insertion loss between the input and output ports of the switch. In the first 3DRIM prototype, a 200×280 microns micromirror was assembled on the top of the electrostatic micromotor and was supported through two vertical support posts. The assembly technique was then modified so that the second prototype can support micromirrors with dimensions up to 400×400 microns. Both prototypes of the 3DRIM are rigid and stable during operation. Also, rotor pole shaping (RPS) design technique was introduced to optimally reshape the physical dimensions of the rotor pole in order to maximize the generated motive torque of the micromotor and minimize the required driving voltage signal. The targeted performance of the 3DRIM was achieved after several PolyMUMPs fabrication runs. The new switch architecture is neither 2-D nor 3-D. Since it is composed of two layers, it can be considered 2.5-D. The new switch overcomes many of the limitations of current traditional 2-D MEMS switches, such as limited scalability and large variations in the insertion loss across output ports. The 1×N MEMS switch fabric has the advantage of being digitally operated. It uses only one 3DRIM to switch the light signal from the input port to any output port. The symmetry employed in the switch design gives it the ability to incorporate a large number of output ports with uniform insertion losses over all output channels, which is not possible with any available 2-D or 3-D MEMS switch architectures. The second switch that employs the 3DRIM is an N×N optical cross-connect (OXC) switch. The design of an N×N OXC uses only 2N of the 3DRIM, which is significantly smaller than the N×N switching micromirrors used in 2-D MEMS architecture. The new N×N architecture is useful for a medium-sized OXC and is simpler than 3-D architecture. A natural extension of the 3DRIM will be to extend its application into more complex optical signal processing, i.e., wavelength-selective switch. A grating structures have been selected to explore the selectivity of the switch. For this reason, we proposed that the surface of the micromirror being replaced by a suitable gratings instead of the flat reflective surface. Thus, this research has developed a rigorous formulation of the electromagnetic scattered near-field from a general-shaped finite gratings in a perfect conducting plane. The formulation utilizes a Fourier-transform representation of the scattered field for the rapid convergence in the upper half-space and the staircase approximation to represent the field in the general-shaped groove. This method provides a solution for the scattered near-field from the groove and hence is considered an essential design tool for near-field manipulation in optical devices. Furthermore, it is applicable for multiple grooves with different profiles and different spacings. Each groove can be filled with an arbitrary material and can take any cross-sectional profile, yet the solution is rigorous because of the rigorous formulations of the fields in the upper-half space and the groove reigns. The efficient formulation of the coefficient matrix results in a banded-matrix form for an efficient and time-saving solution.

Au cours de ces dernières années, les chercheurs ont démontré l’importance de l’accordabilité dans les systèmes de télécommunications fonctionnant pour des multiples bandes de fréquences, afin de réduire leur complexité et leur coût. Ce travail se focalise sur des filtres innovants accordables optiquement et propose ainsi une solution alternative aux méthodes plus classiques comme les MEMS ou les diodes. Cette thèse retrace la conception de trois résonateurs pouvant être de bons candidats à intégrer dans le système accordable optiquement développé au travers du manuscrit. Ces éléments sont conçus par le biais de différentes technologies comme : la technologie « Substrate Integrated Waveguide » combinée avec un effet dit métamatériau et la méthode de cavité chargée par un plot capacitif. Tous ces résonateurs ont été créés dans le but d’avoir des performances intéressantes pour trois critères : le facteur de qualité à vide (Q0), la plage d’accord (TR) et la taille. La dernière partie, quant à elle, se consacre au système d’accordabilité basé sur l’utilisation de capacité CMS et de switches RF contrôlés optiquement et fabriqués à l’aide de la technologie silicium CMOS. Plusieurs méthodes ont été utilisées afin d’améliorer les pertes d’insertion des switches RF et par conséquent les performances du système global, démontrant la faisabilité de ce concept innovant accordable optiquement. / Researchers have demonstrated over the last decade the importance of tunability to reduce the complexity and the cost of telecommunication systems operating at multiple frequency bands and standards. This work focuses on novel optically tunable filters for microwave applications and therefore proposes alternative solution to commonly used tuning methods such as MEMS or diodes. The thesis has investigated different resonators for having good candidates for the novel optically tunable system developed throughout this manuscript. Different technologies are used to design such components, namely: Substrate Integrated Waveguide (SIW) technology combined with metamaterial effect and cavity loading. All manufactured resonators are designed to be balanced between three features: the unloaded quality factor (Q0), the tuning range (TR) and the size. The last part deals with the tuning system based on SMT capacitance and optically controlled RF switches based on Si CMOS technology. Several methods have been used to improve the insertion loss of manufactured switches and therefore the performance of the whole system, demonstrating the feasibility of this novel optically based tunable concept.

El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento. Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda. El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación. / Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation. / El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació. / Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150

Optical communications systems operate at the limits of their margins to respond to increasing capacity demands. Some of the signal processing functions required must soon operate at speeds beyond electronic implementation. Optical signal processors are fundamentally analog which requires precise control of the operating state. Programmable optical components are consequently essential. The thesis explores and elucidates the properties of meshes of generalized Mach-Zehnder interferometers (GMZIs) amenable to silicon (Si) photonics integration that are based on multimode interference couplers with programmability achieved via voltage controlled phase-shift elements within the interferometer arms to perform a variety of finite impulse response (FIR) and infinite impulse response (IIR) signal processing functions. The thesis presents a novel class of integrated photonic phased array systems with a single-stage, multistage, and feedback architectures. The designed photonic integrated systems utilize nano-electromechanical-system (NEMS) operated phase shifters of cascaded free suspended slot waveguides that are compact and require a small amount of power to operate. The structure of the integrated photonic phased array switch (IPPAS) elements is organized such that it brings the NEMS-operated phase shifters to the exterior sides of the construction; facilitating electrical connection. The transition slot couplers used to interconnect the phase shifters to the rest of the silicon structure are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the fabric, which is taken as a ground. Phased array processors of 2×2 and 4×4 multiple-input-multiple-output (MIMO) ports are conveniently designed within reasonable footprints native to the current fabrication technologies. The response of the single-stage 4×4 broadband IPPAS element is determined, and its phase synthesis states required for single-throw, double-throw and broadcast routing operations are predicted. The transmission responses of the single-stage wavelength division multiplexing (WDM) processors of 2×2 and 4×4 MIMO ports are simulated. The wavelength steering capability of the transmission interferograms by applying progressive phase shifts through the array of NEMS-operated phase shift elements of the single-stage 4×4 WDM (de)multiplexer is demonstrated. The advantages of cascading broadband and WDM phased array sections are articulated through several study cases. Five different cascaded phased array architectures are trialed for the construction of non-blocking 4×4 IPPAS broadband switches that are essential elements in the construction of universal photonic processors. A cascaded 2×2 WDM (de)multiplexer that can set the bandwidth of the (de)multiplexed cyclic channels into a binary number of programmable values is demonstrated. The envelope and wavelength modulations of the transmission responses utilizing a cascaded forward structure of three 2×2 sections that can be utilized for the (de)multiplexing of different bandwidth channels are demonstrated providing individual wavelength steering capability of the narrowband and wideband channels and the individual wavelength steering capability of the slow envelope and wavelength modulating functions. Innovative universal 2×2 and 4×4 cascaded phased array processors of advanced high-order architectures that can function as both non-blocking broadband routers and tunable WDM (de)multiplexers with spectrum steering and bandwidth control of the (de)multiplexed demands are introduced. The multimode interference (MMI) coupler is utilized for the construction of several IIR feedback photonic processors. Tunable photonic feedback processors have the advantage of using less number of MMI couplers compared to their counterparts of FIR forward-path processors saving on the footprint and loss merits. A passive feedback 2×2 (de)multiplexer made of a 4×4 MMI coupler and two loopback paths is proposed. The inclusion of an imbalance in the lengths of the loopback paths of the same symmetrical feedback (de)multiplexer is demonstrated to achieve wavelength modulation of the (de)multiplexed transmission responses that are useful for the (de)multiplexing of different bandwidth channels. Several newly introduced IIR feedback architectures are demonstrated to function similarly as their counterparts of FIR forward-path processors as binary bandwidth variable (de)multiplexers, envelope and wavelength modulation (de)multiplexers, and universal feedback processors. The investigation provided in this thesis is also supported with dynamic zero-pole evolution analysis in the complex plane of analysis of the studied FIR and IIR photonic processors to enhance understanding the principle of operation. This research expands the prospective for constructing innovative silicon-on-insulator (SOI) based optical processors for applications in modern optical communication systems and programmable elastic optical networks (EONs).

In this thesis, experimental studies are reported of ultrafast dynamics and third order optical nonlinear coefficients of carbon nanotubes, and time resolved coherent phonon dynamics of semiconductors and rare earth titanates. The thesis is divided into three parts. The first part presents (i) general introduction to theoretical background on nonlinear optical susceptibility and time resolved studies, and systems studied (chapter 1) and (ii) experimental techniques (chapter 2). The second part of the thesis deals with the measurements of third order nonlinear susceptibilities and ultrafast dynamics of single and double walled carbon nanotubes (chapter 3). The third part contains coherent phonon dynamics in semiconductors, Te (chapter 4), Bi2Te3 (chapter 5), and ZnTe (chapter 6) and spin-frustrated rare earth titanate insulators (chapter 7). Chapter 1: This chapter is a general introduction to the thesis. The chapter is divided into two parts: (i) light-matter interaction, and (ii) systems studied. Under light-matter interaction, we describe the required theoretical and conceptual background of nonlinear optical susceptibilities and time resolved carrier and phonon dynamics. In the next part, a brief summary of details of the systems studied, that include carbon nanotubes (single and double walled), semiconductors (Te, Bi2Te3 and ZnTe) and insulating spin-frustrated rare earth titanates (Gd2Ti2O7, Dy2Ti2O7 and Tb2Ti2O7), are presented. Chapter 2: Details of the ultrafast laser systems (femtosecond oscillator and amplifier), pulse width measurements and ultrafast experimental pump-probe and z-scan techniques, used in this thesis are given in this chapter. Chapter 3: Here the experimental results on the measurements of third order optical nonlinearity and ultrafast dynamics of single and double walled carbon nanotubes are presented. The chapter starts with a general overview of optical switching followed by known ultrafast dynamics and nonlinear studies on carbon nanotubes. In the next section, our theoretical modelling of nonlinear absorption and refraction in the limit of saturable absorption is described. The final two sections depict our results on single and double walled carbon nanotubes. These studies indicate that double walled carbon nanotubes are best candidates for ultrafast optical switching. Chapter 4: This chapter presents temperature and pump fluence dependent femtosecond time resolved reflectivity measurements on tellurium. The chapter starts with an overview of previous pump-probe reflectivity studies at room temperature on tellurium followed by our results. A totally symmetric A1 coherent phonon at 3.6 THz responsible for the oscillations in the reflectivity data is observed to be strongly positively chirped (i.e, phonon time period decreases at longer pump-probe delay times) with increasing photoexcited carrier density, more so at lower temperatures. We show for the first time that the temperature dependence of the coherent phonon frequency is anomalous (i.e, increasing with increasing temperature) at high photoexcited carrier density due to electron-phonon interaction. At the highest photoexcited carrier densities of ~ 1.4 x 1021cm-3 and the sample temperature of 3K, the lattice displacement of the coherent phonon mode is estimated to be as high as ~ 0.24 Å. Numerical simulations based on coupled effects of optical absorption and carrier diffusion reveal that the diffusion of carriers dominates the non-oscillatory electronic part of the time-resolved reflectivity. Finally, using the pump-probe experiments at low carrier density of 6 x 1018 cm-3, we separate the phonon anharmonicity to obtain the electron-phonon coupling contribution to the phonon frequency and linewidth. Chapter 5: This chapter begins with a introduction of previous ultrafast studies at room temperature on Bi2Te3 and then presents our results on the temperature dependent high pump fluence time resolved reflectivity measurements on Bi2Te3. The time resolved reflectivity data shows two coherently generated totally symmetric A1g modes at 1.85 THz and 3.6 THz at 296K which blue shift to 1.9 THz and 4.02 THz, respectively at 3K. At high photoexcited carrier density of ~ 1.7 x 1021cm-3, the phonon mode at 4.02 THz is two orders of magnitude higher positively chirped than the lower frequency mode at 1.9 THz. The chirp parameter, β is shown to vary inversely with temperature. The time evolution of these modes is studied using continuous wavelet transform of the time-resolved reflectivity data. The analysis shows that the build up time for the two coherent phonons is different. Chapter 6: This chapter starts with a general introduction on various as pects of ZnTe to be used in generation and detection of THz followed by our results on influence of carriers and sample temperature on coherent phonon and polariton generation in ZnTe. Combination of femtosecond Kerr, two photon absorption and impulsive stimulated Raman scattering experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in < 110 > cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two-photon induced free carriers on the creation of both the polaritons and phonons is largest at 4K where the free carrier lifetime is enhanced. Further, the temperature dependant impulsive stimulated Raman scattering on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X) in contrast to the assignment as two-phonon process in earlier studies. Chapter 7: This chapter starts with an introduction on previous Raman studies on the pyrochlore systems accompanied by our results on the generation of coherent optical phonons in spin frustrated pyrochlore single crystals Dy2Ti2O7, Gd2Ti2O7 and Tb2Ti2O7 and their behavior as a function of sample temperature from 296K to 4K. At 4K, two coherent phonons are observed at 5.3 THz (5.0 THz) and ~ 9.3 THz (9.4 THz) for Dy2Ti2O7 (Gd2Ti2O7) whereas three coherent phonons are generated at ~ 4.8 THz, 8.6 THz and 9.6 THz for Tb2Ti2O7. In the case of spin-ice Dy2Ti2O7, a clear discontinuity is observed in the linewidths of both the coherent phonons as well as in the phase of low energy coherent phonon mode, indicating a subtle structural change as also suggested by Raman studies. In comparison, such changes are not seen in the coherent phonons of Gd2Ti2O7, and Tb2Ti2O7. Another important observation is the phase difference of ‘π’ between the modes in all the samples, thus suggesting that the driving forces behind the generation of these modes are different in nature unlike a purely impulsive or displacive mechanism. Chapter 8: This chapter summarizes our results reported in this thesis and gives future directions.

Tesis por compendio / [ES] La fotónica de silicio es una tecnología emergente clave en redes de comunicación e interconexiones de centros de datos de nueva generación, entre otros. Su éxito se basa en la utilización de plataformas compatibles con la tecnología CMOS para la integración de circuitos ópticos en dispositivos pequeños para una producción a gran escala a bajo coste. Dentro de este campo, los interferómetros integrados juegan un papel crucial en el desarrollo de diversas aplicaciones fotónicas en un chip como sensores biológicos, moduladores electro-ópticos, conmutadores totalmente ópticos, circuitos programables o sistemas LiDAR, entre otros. Sin embargo, es bien sabido que la interferometría óptica suele requerir caminos de interacción muy largos, lo que dificulta su integración en espacios muy compactos. Para mitigar algunas de estas limitaciones de tamaño, surgieron varios enfoques, incluyendo materiales sofisticados o estructuras más complejas, que, en principio, redujeron el área de diseño pero a expensas de aumentar los pasos del proceso de fabricación y el coste. Esta tesis tiene como objetivo proporcionar soluciones generales al problema de tamaño típico de los interferómetros ópticos integrados, con el fin de permitir la integración densa de dispositivos basados en silicio. Para ello, aunamos los beneficios tanto de las guías de onda bimodales como de las estructuras periódicas, en términos de la mejora del rendimiento y la posibilidad para diseñar interferómetros monocanal en áreas muy reducidas. Más específicamente, investigamos los efectos dispersivos que aparecen en estructuras menores a la longitud de onda y en las de cristal fotónico, para su implementación en diferentes configuraciones interferométricas bimodales. Además, demostramos varias aplicaciones potenciales como sensores, moduladores y conmutadores en tamaños ultra compactos de unas pocas micras cuadradas. En general, esta tesis propone un nuevo concepto de interferómetro integrado que aborda los requisitos de tamaño de la fotónica actual y abre nuevas vías para futuros dispositivos basados en funcionamiento bimodal. / [CA] La fotònica de silici és una tecnologia emergent clau en xarxes de comunicació i interconnexions de centres de dades de nova generació, entre altres. El seu èxit es basa en la utilització de plataformes compatibles amb la tecnologia CMOS per a la integració de circuits òptics en dispositius diminuts per a una producció a gran escala a baix cost. Dins d'aquest camp, els interferòmetres integrats juguen un paper crucial en el desenvolupament de diverses aplicacions fotòniques en un xip com a sensors biològics, moduladors electro-òptics, commutadors totalment òptics, circuits programables o sistemes LiDAR, entre altres. No obstant això, és ben sabut que la interferometría òptica sol requerir camins d'interacció molt llargs, la qual cosa dificulta la seua integració en espais molt compactes. Per a mitigar algunes d'aquestes limitacions de grandària, van sorgir diversos enfocaments, incloent materials sofisticats o estructures més complexes, que, en principi, van reduir l'àrea de disseny però a costa d'augmentar els processos de fabricació i el cost. Aquesta tesi té com a objectiu proporcionar solucions generals al problema de grandària típica dels interferòmetres òptics integrats, amb la finalitat de permetre la integració densa de dispositius basats en silici. Per a això, combinem els beneficis tant de les guies d'ones bimodals com de les estructures periòdiques, en termes de funcionament d'alt rendiment per a dissenyar interferòmetres monocanal compactes en àrees molt reduïdes. Més específicament, investiguem els efectes dispersius que apareixen en estructures menors a la longitud d'ona i en les de cristall fotònic, per a la seua implementació en diferents configuracions interferomètriques bimodals. A més, vam demostrar diverses aplicacions potencials com a sensors, moduladors i commutadors en grandàries ultres compactes d'unes poques micres cuadrades. En general, aquesta tesi proposa un nou concepte d'interferòmetre integrat que aborda els requisits de grandària de la fotònica actual i obri noves vies per a futurs dispositius basats en funcionament bimodal. / [EN] Silicon photonics is a key emerging technology in next-generation communication networks and data centers interconnects, among others. Its success relies on the ability of using CMOS-compatible platforms for the integration of optical circuits into small devices for a large-scale production at low-cost. Within this field, integrated interferometers play a crucial role in the development of several on-chip photonic applications such as biological sensors, electro-optic modulators, all-optical switches, programmable circuits or LiDAR systems, among others. However, it is well known that optical interferometry usually requires very long interaction paths, which hinders its integration in highly compact footprints. To mitigate some of these size limitations, several approaches emerged including sophisticated materials or more complex structures, which, in principle, reduced the design area but at the expense of increasing fabrication process steps and cost. This thesis aims at providing general solutions to the long-standing size problem typical of optical integrated interferometers, in order to enable the densely integration of silicon-based devices. To this end, we combine the benefits from both bimodal waveguides and periodic structures, in terms of high-performance operation and compactness to design single-channel interferometers in very reduced areas. More specifically, we investigate the dispersive effects that arise from subwavelength grating and photonic crystal structures for their implementation in different bimodal interferometric configurations. Furthermore, we demonstrate various potential applications such as sensors, modulators and switches in ultra-compact footprints of a few square microns. In general, this thesis proposes a new concept of integrated interferometer that addresses the size requirements of current photonics and open up new avenues for future bimodal-operation-based devices. / Financial support is also gratefully acknowledged through postdoctoral FPI grants from Universitat Politècnica de València (PAID-01-18). European Commission through the Horizon 2020 Programme (PHC-634013 PHOCNOSIS project). The authors acknowledge funding from the Generalitat Valenciana through the AVANTI/2019/123, ACIF/2019/009 and PPC/2020/037 grants and from the European Union through the operational program of the European Regional Development Fund (FEDER) of the Valencia Regional Government 2014–2020. / Torrijos Morán, L. (2021). Photonic Applications Based on Bimodal Interferometry in Periodic Integrated Waveguides [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/172163 / Compendio