This study describes the creation of various furfural derivatives and their respective light sensitivity.

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Yes / In this paper we investigate the optical and structural properties of a zwitterionic poly[3-(N-(4-sulfonato-1-butyl)-N,N-diethylammonium)hexyl-2,5-thiophene] (P3SBDEAHT) conjugated polyelectrolyte (CPE) and its interaction in water with surfactants, using absorption, photoluminescence (PL), electrical conductivity, molecular dynamics simulations (MDS) and small-angle X-ray scattering (SAXS). Different surfactants were studied to evaluate the effect of the head group and chain length on the self-assembly. PL data emphasize the importance of polymer–surfactant electrostatic interactions in the formation of complexes. Nevertheless, conductivity and MDS data have shown that nonspecific interactions also play an important role. These seem to be responsible for the spatial position of the surfactant tail in the complex and, eventually, for breaking-up P3SBDEAHT aggregates. SAXS measurements on P3SBDEAHT-zwitterionic cocamidopropyl betaine (CAPB) surfactant complexes showed a specific structural organization of the system. The CAPB surfactant promotes a structural transition from pure P3SBDEAHT 3-dimensional aggregates (radius of gyration ∼85 Å) to thick cylindrical aggregates (∼20 Å) where all CAPB molecules are associated with the polymer. For molar ratios (in terms of the polymer repeat unit) >1 the SAXS interference maximum of the complexes resembles that of pure CAPB thus suggesting ongoing phase segregation in the formation of a “pure” CAPB phase. / The Coimbra Chemistry Centre is supported by the Fundação para a Ciência e a Tecnologia (FCT), Portuguese Agency for Scientific Research, through the project PEst-OE/QUI/UI0313/2014. TC and BS thank FCT, which has supported this work through Postdoctoral Grants (SFRH/BPD/47181/2008 and SFRH/BPD/82396/2011, respectively). DA acknowledges CNPq, Conselho Nacional de Desenvolvimento Científico e Tecnológico – Brasil, for financial support through the Grant “Bolsista do CNPq – Brasil”. The research leading to the SAXS data has received funding from the European Community's Seventh Framework Programme (FP7/2007–2013) CALIPSO under grant agreement no. 312284.

No description available.

The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ_μ = Γ₀ + AL⁻¹, where Γ₀ (Γ_μ) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium. / Ph. D.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第25015号 / 工博第5192号 / 新制||工||1991(附属図書館) / 京都大学大学院工学研究科合成・生物化学専攻 / (主査)教授 古川 修平, 教授 生越 友樹, 教授 杉安 和憲 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Orientadores: Fernando Iikawa, Odilon Divino Damasceno Couto Junior / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-29T15:53:03Z (GMT). No. of bitstreams: 1 MirandaLaHera_VladimirRoger_M.pdf: 7239733 bytes, checksum: 1e843140547afd4fb68e666db8a03911 (MD5) Previous issue date: 2015 / Resumo: Neste trabalho foram estudadas as propriedades ópticas de nanofios (NWs) semicondutores InAsP/InP na fase Wurzita, crescidos pelo método Vapor-Liquid-Solid (VLS) no sistema Chemical Beam Epitaxy (CBE). As medidas ópticas foram realizadas por espectroscopia de fotoluminescência em ensembles e nanofios individuais, por macro e micro-fotoluminescência. O interesse pelas ligas de InAsP é que elas apresentam energia do gap na faixa de infravermelho próximo, uma faixa espectral utilizada para a tecnologia de telecomunicações bem como em fabricação de detetores de compostos de carbono nocivos, pois eles apresentam absorção óptica nessa faixa. Além disso, InAsP na forma de estruturas na escala nanométrica, em particular, em NWs, além de ter a fase cúbica estável, que ocorre em todos os fosfetos e arsenetos de compostos III-V, a fase hexagonal wurtzita é também observada. A maioria de suas propriedades na estrutura wurtzita não ainda foi investigada em detalhes. Os nanofios heteroestruturados contendo InAsP e InP na fase wurtzita não são bem conhecidos também. O ponto principal desta tese é, portanto, investigar as propriedades ópticas desses compostos na forma de nanofios, que estão na fase wurtzita, e estudar a emissão óptica destas heteroestruturas, onde envolve o efeito de confinamento quântico, o qual pode ser utilizado para sintonizar o comprimento de onda da emissão. Investigamos NWs de ligas de InAsP com três composições diferentes, mudando o fluxo de arsina e fosfina, que foram crescidos usando três tamanhos de nanopartículas de catalizadores de Au diferentes de 2, 5 e 20 nm. Observamos que a forma do nanofio depende do tamanho de nanopartículas de Au. Para menores tamanhos, obteve-se uma forma de torre, enquanto que para o maior, a forma de agulha. A concentração de P é de cerca de 50% estimada por espectroscopia de fotoluminescência e de energia dispersiva de raios-X. A emissão óptica é de cerca de 1.5 µm, adequada para aplicação em dispositivos de telecomunicações. Nos NWs heteroestruturados de InAsP/InP, investigamos as amostras com tempos de inclusão diferentes de InAsP (2, 5, 10, 20 e 40 s) no InP, e elas foram crescidas com diferentes tamanhos de nanopartículas de Au (2, 5 e 20 nm) utilizadas como catalisador. Nessas amostras, todos os nanofios apresentam a forma de uma agulha. Os espectros de macro e micro-fotoluminescência mostram fortes emissões ópticas atribuídas à camada de InAsP e variam entre 800-1000 nm. A energia de emissão depende da quantidade de InAsP de acordo com o efeito de confinamento quântico. Também, observamos várias linhas estreitas nos espectros de micro-fotoluminescência de nanofios individuais atribuídos aos estados localizados das camadas InAsP. Essas linhas são provenientes de duas regiões, sendo uma delas da camada de InAsP axial catalisado e uma segunda, da camada lateral de InAsP devido ao crescimento epitaxial. Este resultado mostra que os NWs de InAsP/InP apresentam alta qualidade cristalina e são sistemas promissores para a aplicação em dispositivos ópticos / Abstract: In this work, we studied the optical properties of wurtzite phase InAsP alloy nanowires (NWs) and InAsP/InP heterostructure nanowires grown by Vapor-Liquid-Solid (VLS) method in a Chemical Beam Epitaxy (CBE) system. The optical measurements were carried out by photoluminescence spectroscopy in ensemble and single NWs by macro and micro-photoluminescence techniques. The interest for InAsP alloys is that they present gap energy in the near infra-red, a spectral range commonly used for the telecommunication technology as well as for harmful carbon compounds detection sensors, since their optical absorption is in the same energy range. Furthermore, the InAsP in nanoscale structures, in particular, in NWs, in addition to the stable cubic phase, which occurs in all other phosphide and arsenide III-V compounds, hexagonal wurtzite phase is also observed. Most of the properties of their wurtzite structure has not been investigated in details yet. The heterostructure NWs containing InAsP and InP in wurtzite phase are not deeply known as well. The main purpose of this thesis is, therefore, to investigate the optical properties of this compounds in NW forms, which present wurtzite phase, and to study the optical emission from the heterostructures, where the quantum confinement effect can also be used to tune the emission wavelength. We investigated InAsP alloy NWs with three compositions changing the arsine and phosphine flux and they are grown using three sizes of Au-nanoparticle catalyst, 2, 5 and 20 nm. We note that the NW shape depends on the Au-nanoparticle size. For small size, a tower-like shape was observed, while for large one, the needle-like one. The P content of the samples is around the 50 % estimated by the photoluminescence and by Energy-Dispersive X-ray spectroscopy. The optical emission is around 1.5 µm, appropriate for telecommunication device applications. For InAsP/InP heterostructure NWs, we investigated samples with different InAsP time deposition (2, 5, 10, 20 and 40 s) onto the InP and they were grown with different Au-nanoparticle size (2, 5 and 20 nm) used as catalyst. In these samples, all nanowires present needle-like shape. The macro and micro-photoluminescence spectra show strong optical emissions in 800-1000 nm range attributed to the InAsP layer emissions. The emission energy depends on the amount of InAsP according to the quantum confinement effect. We observed several sharp lines in the micro-photoluminescence spectra of single NWs attributed to the localized states of the InAsP layers. They come from two regions, one of them from the axial catalyst InAsP layer and second one, from the lateral InAsP epitaxial growth layer. The result shows that the InAsP/InP heterostructures NWs grown by VLS method in the CBE system present high crystal quality and are promising structure for optical device applications / Mestrado / Física / Mestre em Física / 1247651/2013 / CAPES

Xi, Hongyan. / "December 2010." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 163-176). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract also in Chinese.

The optically stimulated luminescence (OSL) characteristics of a suite of quartz and feldspar samples from a range of modern glaciofluvial sediments have been explored to determine the use of OSL as a depositional pathway tracer. Paraglacial and subglacial source material and various glaciofluvial deposits have been analysed from the glacial catchments of Bergsetbreen, Fåbergstølsbreen, and Nigardsbreen as well as the Fåbergstølsgrandane sandur, Jostedalen, Norway. The OSL distribution signatures have been characterised through exploration of sample skewness, kurtosis and overdispersion, and dose distributions of the different depositional settings and source materials are distinct for both quartz and feldspar. Residual ages are greatest for feldspar, indicating significant potential age overestimation where feldspar is used to date glaciofluvial deposits. Sample dose distributions and overdispersion characteristics are driven by source sediment properties, whereas residual ages are controlled by transport and depositional processes. Those transport and depositional processes which result in significant light exposure, also influence dose distributions, and processes that sort sediments least effectively have the highest residual doses. Sample OSL characteristics, transport distance and grain size distributions have been investigated using factor analysis, as a means of predicting sediment source, facies, depositional process and deposit type. Although the depositional processes of the quartz samples can be clearly differentiated based upon OSL characteristics, factor analyses of feldspar and grain size characteristics are inconclusive. The application of quartz OSL to the Norwegian samples was limited by its very poor luminescence sensitivity. Quartz is the preferred mineral for OSL, however, despite the plethora of successful quartz OSL applications, the precise origin of the UV/blue luminescence emission, measured during OSL, remains unclear. The origins of this emission and controls on its intensity were explored using a variety of spectroscopic techniques including photoluminescence, cathodoluminescence, radioluminescence (RL), ionoluminescence (IL) and x-ray excited optical luminescence (XEOL). Exciting sample luminescence at a range of energies enables exploration of the different donor centres responsible for the luminescence emission. Cathodoluminescence and RL emission spectra are similar, comprising broad emissions at 1.5, 2.0 and 2.7 eV (detection in the UV part of the spectrum was not possible for these experiments). Ionoluminescence emission spectra were dominated by the ~ 3.3 eV emission, which is a component of the signal conventionally monitored during OSL. This emission depleted as a function of dose, to the benefit of the red emission (1.8-2.0 eV) for all samples throughout IL, and similar observations were made for the 3.4 eV emission observed from the XEOL emission spectra. The XEOL spectra are dominated by an emission at ~ 3.8 eV, not widely reported for quartz, which has tentatively been attributed to peroxy linkages. Differences between the IL and XEOL emission spectra are interpreted as evidence for the presence of multiple excited states.

We have performed fluorescence extended X-ray absorption fine structure (EXAFS) measurements on the Cd K-edge of partial electrolyte (PE) treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� (CIGS) thin film samples using synchrotron X-ray radiation. This data was compared to the EXAFS spectra of CdSe and CdO standards. Cd local structure models were constructed and used for the least square analysis of the spectra. The first model employed implantation of a cadmium atom and a single oxygen atom into the CIGS lattice. Specifically, an oxygen atom was introduced in the tetrahedral bonded Cd-Se local structure. Employing FEFF8 with WinXAS software package, experimental data was theoretically fitted to the first shell single-scattering paths of the Cd atom in the (PE) treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� thin film samples. The main peak observed in the data represents the Cd-Se bonds and the shoulder corresponds to the Cd-O bond. However, the number of total nearest neighbors is not consistent with this model. A two-phase model that includes both Cd-Se tetrahedron and Cd-O octahedron were then reconstructed. Again, a least-agrees very well with the experimental data, and the total first nearest neighbor number is consistent with the two phase model at NN=4.2. This study indicates the surface of Cd partial electrolyte treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� thin films contains both CdSe and CdO. / Graduation date: 2004