Neste trabalho foi estudada a produção, por síntese hidrotermal assistida por microondas, nanoestruturas de pentóxido de nióbio (Nb2O5) a partir do precursor pentacloreto de nióbio (NbCl5). A síntese foi realizada nas temperaturas de 150 e 200 °C durante 130 min, e o produto obtido foi tratado termicamente a temperaturas de 600, 800 e 1000 °C por 60 min com taxa de aquecimento de 10 °C/min. Os produtos obtidos foram caracterizados por análise termogravimétrica (ATG), para detectar a perda de massa com a temperatura; por difração de raios X (DRX), para análise da estrutura cristalina; por espectroscopia de infravermelho por transformada de Fourier (FTIR) e por espectroscopia Raman, para identificação das fases formadas; por microscopia eletrônica de varredura (MEV) e microscopia eletrônica de transmissão (MET), para verificação da morfologia do material; e por espectroscopia de refletância difusa (ERD), para identificar as propriedades ópticas do material. Além dessas, foram realizados cálculos do tamanho do cristalito pela equação de Scherrer. Os resultados indicaram a formação de nanoestruturas com diversas fases cristalinas de nióbio (TT, T, B, M e H-Nb2O5). O tamanho do cristalito variou em função da temperatura de tratamento térmico praticado: entre 35,85 e 38,80 nm para as amostras sintetizadas a 150 °C; e entre 34,84 e 40,93 nm para as amostras sintetizadas a 200 °C. Com a análise por refletância difusa foram obtidos os valores de band gaps para as amostras sintetizadas, e os resultados identificaram material semicondutor com uma variação de 3,13 a 3,90 eV. / In this work was studied the production by hydrothermal synthesis assist for microwave, niobium pentoxide nanocrystals (Nb2O5) obtained from the precursor pentachloride niobium (NbCl5). The synthesis was carried out at temperature of 150 and 200 °C for 130 min and the product obtained was calcined at temperatures 600, 800 and 1000 °C for 60 min and heating rate at 10 °C/min. The following characterizations were performed for analysis of the material, among them, thermal gravimetric analysis (ATG) for detecting the lost mass by temperature, X-ray diffraction (XRD) for analysis of the crystal structure, Fourier Transform Infrared spectroscopic (FTIR) and Raman spectroscopic was used for analyze the changes in superficial chemical connections, scanning electron microscopy (SEM) and transmission electronic microscopic (TEM) for morphology of material and diffuse reflectance spectroscopy (DRS) for identification the material optical properties. Moreover, calculate were realized of crystallite size by Scherrer’s equation. The results showed the formation of nanostrutured with various phases (TT, T, B, M e H-Nb2O5). The crystallite size varied in function of thermal treatment temperature from 35,85 to 38,80 nm for synthesizes samples in 150 °C and 34,84 to 40,93 nm for synthesizes samples in 200 °C. With the analysis by diffuse reflectance were obtained the band gap values for the synthesized samples and the results identify a semiconductor material with a variation from 3,13 to 3,90 eV.

The current project work aims to develop a simple and sensitive immunoassay for prostate specific antigen (PSA) by using changes of fluorescence of gold nanoparticles with varying coverage of proteins. In this work we attempted to investigate the changes in optical properties caused by coating the nanoparticles with antibody-antigen complex. We wanted to construct biosensor that utilizes these changes to monitor biological bindings without fluorescent marker.The underlying idea of the project has been to use label free immunoassay to monitor not only presence or absence of antigens in sample solution but also to quantify the antigen concentration, we have tried to develop a simple and time and labour saving method based on a non competitive heterogeneous but label free immunoassay.There are many instrumentation techniques for analysis of changes of optical properties of nanoparticles used in an immunoassay, like absorption spectroscopy, surface plasmon resonance spectroscopy, Raman spectroscopy, time resolved fluorescence and electrochemical techniques [1]. In present work we have investigated whether the adsorption of antibodies onto Au (gold) nanoparticles would change the optical properties of antibodies to an extent sufficient to differentiate them from the free antibodies. We have furthermore investigated whether the subsequent antigen binding to antibodies also induces changes of optical properties sufficient for quantitative analysis. We have chosen to monitor optical properties via measurement of fluorescence because of its sensitivity and selectivity.Our objective here has been not only to investigate spectral changes but also to develop a robust assay protocol, for example with respect to the antibody binding and nanoparticles separation techniques. Two critical steps of the experimental procedure developed here have been (i) the separation of excess prostate specific monoclonal antibodies (PSA10) from the solution containing nanoparticles with adsorbed PSA10 and free PSA10, and the stability of Au-PSA10 conjugates, and (ii) quantification of the binding of PSA to PSA10 covered nanoparticles.We have encountered problems with agglomeration of gold nanoparticles, both naked and with PSA10 conjugates. The naked nanoparticles were “sticky” and bound easily with other materials, for example with agarose beads from the separation columns. Fortunately the coated nanoparticles turned out to be much more inert. This allowed the separation and, simultaneously, acted as a test for antibody coverage. / Uppsatsnivå: D

Zinc nitride and magnesium nitride are examples of the relatively unexplored II3V2 group of semiconductor materials. These materials have potential applications in the electronics industry due to their excellent optical and electrical properties. This study mainly focuses on the growth and characterization of the new semiconductor materials: zinc nitride, magnesium nitride, and their alloys. The (100) oriented zinc nitride thin films were grown on both (110) sapphire substrates and (100) MgO substrates by plasma-assisted molecular beam epitaxy (MBE). The typical growth rate is in the range of 0.02-0.06 nm/s, the growth temperature is in the range of 140-180 oC, and background nitrogen pressure is around 10-5 Torr. The growth process was monitored by in-situ: reflection high energy electron diffraction (RHEED) and optical reflectivity. The RHEED and X-ray diffraction patterns of the zinc nitride indicate that the film is a single crystal material. The in-situ optical reflectivity pattern of the zinc nitride shows interference oscillations, and these oscillations are damped out as the thickness increases. The reflectivity as a function of time was accurately simulated by an optical equation. The optical constants of the thin films, the growth rate, and the thickness were derived from the simulation of the in-situ reflectance. The X-ray diffraction shows that (400) oriented zinc nitride thin films were grown on both A-plane (110) sapphire substrates and (100) MgO substrates. Optical transmittance measurements were performed on the zinc nitride thin films. The spectrum of the zinc nitride transmittance indicates that zinc nitride has a high optical absorption in the visible light region. The absorption coefficient was calculated from the transmittance spectrum, and the optical band gap of the zinc nitride thin film was found to be 1.25-1.28 eV. Ellipsometry measurements suggested that the refractive index of zinc nitride is 2.3-2.7, and the extinction coefficient is ~0.5-0.7 in the energy range 1.5-3.0 eV. The electron transport measurement shows that the single crystal zinc nitride has a mobility as high as 395 cm2 /Vs. A plasma-assisted MBE system was employed for magnesium nitride growth. The growth temperature was in the range of 300-350 oC. RHEED and laser reflectivity were employed during growth. The RHEED and X-ray diffraction patterns indicated that the epilayers are single crystal films. The optical laser reflectivity was well fitted by a modified optical equation. The optical constants and growth rate were derived from the simulation. X-ray diffraction showed that (400) oriented single crystal magnesium nitride films were grown on (100) MgO substrates. The optical transmittance spectra show that the magnesium nitride has a high absorption below 500 nm. The calculated absorption coefficient is as high as 4x10-4 cm-1 in the range of ~2.5-3.0 eV. The optical band gap was estimated to be ~2.5 eV. Ellipsometry measurements showed that the refractive index of the magnesium nitride is 2.3-2.75 and the extinction coefficient is less than 0.3 in the energy range of 1.5-3.0 eV. Zinc nitride-magnesium nitride (Zn3-3xMg3xN2) alloys were grown on (100) YSZ substrates by sputtering. The bandgap ranged from 1.2 eV to 2.1 eV for Mg content x in the 0-0.59 range. One film with a bandgap of ~1.4 eV and Mg content of 0.18 has the relatively high mobility of 47 cm2 /Vs which was expected for photovoltaics application. / Graduate

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1979. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. / Includes bibliographical references. / Ph.D.

Lam Sio Kuan. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (p. 111-116). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

"August 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Atomically thin two-dimensional nanomaterials such as graphene and transition metal dichalcogenides (TMDCs) have seen a rapid growth of exploration since the isolation of monolayer graphene. These materials provide a rich field of study for physics and optoelectronics applications. Many applications seek to combine a two dimensional (2D) material with another nanomaterial, either another two dimensional material or a zero (0D) or one dimensional (1D) material. The work in this thesis explores the consequences of these interactions from 0D to 2D. We begin in Chapter 2 with a study of energy transfer at 0D-2D interfaces with quantum dots and graphene. In our work we seek to maximize the rate of energy transfer by reducing the distance between the materials. We observe an interplay with the distance-dependence and surface effects from our halogen terminated quantum dots that affect our observed energy transfer. In Chapter 3 we study supercapacitance in composite graphene oxide- carbon nanotube electrodes. At this 2D-1D interface we observe a compounding effect between graphene oxide and carbon nanotubes. Carbon nanotubes increase the accessible surface area of the supercapacitors and improve conductivity by forming a conductive pathway through electrodes. In Chapter 4 we investigate effective means of improving sample quality in TMDCs and discover the importance of the monolayer interface. We observe a drastic improvement in photoluminescence when encapsulating our TMDCs with Boron Nitride. We measure spectral linewidths approaching the intrinsic limit due to this 2D-2D interface. We also effectively reduce excess charge and thus the trion-exciton ratio in our samples through substrate surface passivation. In Chapter 5 we briefly discuss our investigations on chemical doping, heterostructures and interlayer decoupling in ReS₂. We observe an increase in intensity for p-doped MoS₂ samples. We investigated the charge transfer exciton previously identified in heterostructures. Spectral observation of this interlayer exciton remained elusive in our work but provided the motivation for our work in Chapter 4. We also discuss our preliminary results on interlayer decoupling in ReS₂.

The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. The question arises of how to continue to sustain this trend. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. This work opens up new avenues for scaling bandwidth capacity through leveraging orthogonal domains available on-chip, beyond what had previously been employed like WDM and time-division multiplexing (TDM). Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post-fabrication. Through ModePROP simulations, optimizing device performance dynamically post-fabrication is analyzed, through either electro-optical or thermo-optical means. By biasing the arm introducing the slight spectral offset, we can quantifiably improve device performance. Scaling bandwidth is experimentally demonstrated through the device at 3 modes, 2 wavelengths, and 40 Gb/s data rate for 240 Gb/s aggregate bandwidth, with the potential to reduce power penalty per the device optimization process we described. A main motivation for this on-chip spatial multiplexing is the need to reduce costs. As the laser source serves as the greatest power consumer in an optical system, mode-division multiplexing and other forms of spatial multiplexing can be implemented to push its potentially prohibitive cost metrics down. While the device introduces loss, through imperfect mode isolation, as device fabrication improves, tolerance can increase as well. Meanwhile, the rate that laser power consumption increases as supported wavelengths scales is shown to be much faster than the loss introduced by scaling on-chip bandwidth multi-modally. Future generations of ultra-high capacity devices through spatial multiplexing is explored. Already various systems can be implemented multimodally, with the design features serving as useful for other components. Central to photonic network-on-chips, a multimodal switch fabric, composed of microring resonators, is demonstrated to have error-free operation of 1x2 switching of 10 Gb/s data. These contributions aim to scale bandwidth to ultra-high capacity, while ameliorating any imperfect design, through multiple routes conjoined with on-chip spatial multiplexing, and they constitute the bulk of this dissertation. For the latter part, we turn to the issue of integrating a photonic device for dynamic power reallocation in a system. Specifically, we utilize a 4x4 nonblocking switch fabric composed of Mach-Zehnder interferometers that switch both electro-optically and thermo-optically at ns and μs rates respectively. In order to demonstrate an intelligent platform capable of dynamically multicasting data and reallocating power as needed by the system, we must first initialize the switch fabric to control with an electronic interface. A dithering mechanism, whereby exact cross, bar, and sub-percentage states are enforced through the device, is described here. Such a method could be employed for actuating the device table of bias values to states automatically. We then employ a dynamic power reallocation algorithm through a data acquisition unit, showing real-time channel recovery for channels experiencing power loss by diverting power from paths that could tolerate it. The data that is being multicast through the system is experimentally shown to be error-free at 40 Gb/s data rate, when transmitting from one to three clients and going from automatic bar/cross states to equalized power distribution. For the last portion of this topic, the switch fabric was inserted into a high-performance computing system. In order to run benchmarks at 10 Gb/s data ontop of the switch fabric, a newer model of the control plane was implemented to toggle states according to the command issued by the server. Such a programmable mechanism will prove necessary in future implementations of optical subsystems embedded inside larger systems, like data centers. Beyond the specific control plane demonstrated, the idea of an intelligent photonic layer can be applied to alleviate many kinds of optical channel abnormalities or accommodate for switching based on different patterns in data transmission. Besides spatial-multiplexing, expanding on-chip bandwidth can be accomplished by extension of the wavelength detection regime to a longer regime. Experimental demonstration of photodetection at 1.9 μm is shown with Si+-doped Si photodetectors at 1 Gb/s data operation featuring responsivities of .03 AW−1 at 5 V bias. The same way of processing these Si ribbed waveguide photodetectors can garner even longer wavelength operation at 2.2 μm wavelength. Finally, the experimental demonstration of a coherent perfect absorption Si modulator is exhibited, showing a viable extinction ratio of 24.5 dB. Using this coherent perfect absorption mechanism to demodulate signals, there is the added benefit of differential reception. Currently, an automated process for data collection is employed at a faster time scale than instabilities present in fibers in the setup with future implementations eliminating the off-chip phase modulator for greater signal stability. The field of SiPh has developed to a stage where specific application domains can take off and compete according to industrial-level standards. The work in this dissertation contributes to experimental demonstration of a newly developing area of mode-division multiplexing for substantially increasing bandwidth on-chip. While implementing the discussed photonic devices in dynamic systems, various attributes of integrated photonics are leveraged with existing electronic technologies. Future generations of computing systems should then be designed by implementing both system and device level considerations.

O objetivo do trabalho foi o de avançar na compreensão dos mecanismos envolvidos no comportamento óptico de diferentes materiais cerâmicos em função da espessura, utilizados para restauração dentária, determinar os coeficientes de absorção e espalhamento e correlacioná-los às características microestruturais de cada material. Além disso, foi avaliada a capacidade de mascaramento e a razão de contraste do material cerâmico nas formas monolítica, em duas camadas e como restauração cimentada. Para tanto, foram analisadas quatro cerâmicas odontológicas, uma porcelana de cobertura (vítrea) e três compósitos cerâmicos infiltrados com vidro do Sistema InCeram (alumina/vidro, alumina/zircônia/vidro e espinélio/vidro), além de uma resina composta odontológica empregada como substrato resinoso e um cimento resinoso para cimentação. Os coeficientes de espalhamento e absorção foram determinados por meio dos modelos de Beer-Lambert e Kubelka-Munk a partir das curvas espectrais de transmitância e reflectância (com fundos branco e preto) geradas em um espectrofotômetro na faixa de comprimento de onda entre 300 e 800 nm. A microestrutura de cada material foi analisada por meio de microscopia eletrônica de varredura com mapeamento elementar, difração de raios X e análise química por fluorescênica de raios X. O comportamento óptico dos materiais estudados foi influenciado pelas características microestruturais do material e a pela espessura. Os valores do coeficiente de espalhamento, S, das cerâmicas avaliadas foram significativamente maiores do que os valores do coeficiente de absorção, K, na região do visível. Foram propostas equações para prever as curvas espectrais de reflectância e transmitância de bilayers e de restaurações cimentadas. / The aim of this work was to advance in the understanding of the mechanisms related to the optical behavior of different ceramic materials as a function of thickness, used for dental restoration, to determine the absorption and scattering coefficients and to correlate them to the microstructural characteristics of each material. The masking ability and the contrast ratio of ceramic material as monolith, bilayer and cemented restoration were also evaluated. For this, four dental ceramics, one porcelain and three glass-infiltrated ceramic composites of InCeram System (alumina/glass, alumina/zirconia/glass, and spinell/glass), besides one dental composite resin used as resinous substrate and one resinous cement for luting. The scattering and absorption coefficients were determined by the Beer-Lambert and Kubelka-Munk models using spectral curves of transmittance and reflectance (with white and black backs) generated in a spectrophotometer in the 300 to 800 nm wavelength range. The microstructure of each material was analyzed by scanning electron microscopy with elemental mapping, X-ray diffraction, and chemical analysis by X-ray fluorescence. The optical behavior of studied materials was affected by the microstructural characteristics and thickness of the material. The values of scattering coefficient, S, of evaluated ceramics were significantly higher than the values of absorption coefficient, K, in the visible range. Equations for the prediction of reflectance and transmittance spectral curves of bilayer and cemented restorations were proposed.