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Initial research in the field of organic electronics focused primarily on the improvements in material performance. Significant progress has been achieved in the case of organic field effect transistors, where reported mobility values are now over 5 orders of magnitude higher than those of early devices. As a consequence, the use of organic transistors is now being considered for real-world applications in the form of integrated logic circuits. This in turn presents many new challenges, as the logic circuit requirements are more demanding on the transistor characteristics and corresponding fabrication processes. This thesis investigates the feasibility of organic technology for its potential use in future low-cost, high-volume electronic applications. The research objectives were accomplished by practical evaluation of an organic logic circuit fabrication process. First, recent advances in the fabrication of organic circuits in terms of transistor structure, material usage and fabrication techniques are reviewed. Next, a lithographic logic circuit fabrication process using PVP gate dielectric and TIPS-pentacene organic semiconductor adapted from state of the art fabrication process is presented. The logic circuit design decisions and the methodology for the fabrication process are thoroughly documented. Using this process, zero-Vgs and diode-load inverter circuits were successfully fabricated. However, the process is in need of further refinement for more complex circuit designs, as the fabrication of a comparator circuit consisting of 11 transistors was unsuccessful. Two optimisation techniques that are compatible with the logic circuit fabrication process were also explored in this work. To improve the capacitive coupling of the dielectric layer, the use of a polymer nanocomposite dielectric was investigated. The nanocomposite is prepared by blending PVP solution with a high-k inorganic nanoparticle filler, barium strontium titanate. Using the nanocomposite dielectric, both single transistors and integrated logic circuits were successfully fabricated. This is the first report on the use of PVP and barium strontium titanate nanocomposite dielectric with a lithographic based logic circuit fabrication process. The use of PFBT modified Au contacts for the fabrication process was investigated to improve theperformance of the contact electrode layer. Using PFBT, mobility increased by one order of magnitude over untreated Au electrodes for the PVP and TIPS-pentacene transistors.

Organická elektronika je dynamické, rychle se rozvíjející odvětví. Studium nových materiálů pro organickou elektroniku je důležitým úkolem jak z hlediska výkonnosti budoucích zařízení a ekonomičnosti procesů, tak z hlediska vlivu jejich používání na životní prostředí. Deriváty diketopyrrolopyrrolu patří mezi zajímavé materiály, které jsou v posledních letech studovány s ohledem na využití v organické elektronice. Dizertační práce je zaměřena na studium těchto materiálů a jejich jak optickou, tak i elektrickou charakterizaci. Součástí je také zhodnocení jejich potenciální aplikace v organické elektronice a návrhy optimalizace jejich výkonu. Teoretická část práce popisuje současný stav na poli organické elektroniky zaměřený na materiály na bázi diketopyrrolopyrrolu. Následující výsledková část shrnuje podstatné výsledky práce a obsahuje stručný úvod k přiloženým publikacím, včetně zhodnocení vlastního přínosu autora k jednotlivým publikacím. Výsledková část dále sestává z 6 vědeckých publikací, které jsou nedílnou součástí této práce a jsou tematicky propojeny v oblasti organické elektroniky, nových materiálů na bázi diketopyrrolopyrrolu a jejich aplikací. Z formálního hlediska je práce na základě čl. 42 odstavce 1b Studijního a zkušebního řádu VUT koncipovaná jako tematicky uspořádaný soubor uveřejněných prací a prací přijatých k publikaci.

This diploma thesis describes organic pigments of diketopyrrolopyrroles (DDPs) possessing properties applicable in attractive and perspective areas of organic electronics and photonics. The modification of the DPP skeleton was performed by nucleophilic substitution by various alkyl chains and 5 series of DPP derivatives were prepared. The regioselectivity of N-alkylation and also the photophysical properties of the prepared derivatives were studied. A key product of this work is the N,N'-ethyladamantyl derivative of DPP, which exhibited ambipolar characteristic with excellent electron mobility of 0.2 cm2 V–1 s–1. Further, the -conjugation of the above-mentioned DPP derivative was extended by 1 and 2 thiophene units at positions 3,6 and the effect of this modification on optical properties of the resulting derivatives was investigated. A new modified N,N'-unsubstituted DPP derivative was also prepared. The last point of this thesis was the study of the incorporation of formyl functional groups into the skeleton of key N,N'-ethyladamantyl DPP derivative.

Thermal constraints and the quantum limit will soon put a boundary on the scale of new micro and nano magnetoelectronic devices. This necessitates a push into the limits of harnessable natural phenomena to facilitate a post-Moore’s era of design. Requirements for thermodynamic stability at room temperature, fast (Ghz) switching, and low energy cost narrow the list of candidates. Molecular electronic frontier orbital structure of some d-block transition metal ions in crystal fields will deform in response to their local energetic environment, giving rise to the eg and t2g suborbitals. More specifically, in an mononuclear Fe(II) complex, the energetic scale between these two orbitals yields an S=0 low spin diamagnetic state and an S=2 high spin paramagnetic state. Spin crossover complex [Fe{H2B (pz) 2 }2 (bipy)] will show locking of its spin state well above the transition temperature, with an accompanied change of conductivity, when placed in a polar environment. Here we show voltage controllable, room temperature, stable locking of the spin state, and the corresponding conductivity change, when molecular thin films of [Fe{H2B (pz) 2 }2 (bipy)] are deposited on a ferroelectric polyvinylidene fluoride hexafluropropylene substrate. This opens the door to the creation of a thermodynamically stable, room temperature, molecular multiferroic gated voltage device.

Les transistors organiques à effet de champ (OFETs) dans lesquels le transport des charges se fait à travers un film mince de molécules organiques représentent une transformation de la technologie des transistors à effet de champ au regard de la technologie au silicium. Ils permettent notamment d’envisager le développement d’une électronique flexible à bas coût. Ce travail porte sur la synthèse, l’étude et l’utilisation en tant que couche active dans des OFETs de type n de couples d’isomères para- et méta-indacénodithiophènes (para- et méta-IDT) appauvris en électrons inédits. Une introduction aux OFETs de type n est tout d’abord présentée. Elle est suivie par la présentation de la synthèse des dérivés IDT et de l’analyse comparée de leurs propriétés physico-chimiques. La fabrication des OFETs, leur caractérisation et l’optimisation de leur architecture est enfin décrite, leurs performances montrant l’intérêt des IDTs pour les OFETs de type n. Différentes fonctionnalisations menant à des IDTs d’architecture 3π-2spiro sont également synthétisées afin d’étudier les propriétés intrinsèques de ces dérivés π-conjugués et d’envisager leur incorporation comme matrice hôte dans des diodes électrophosphorescentes organiques. / Organic Field Effect Transistors (OFETs), in which the charge transport is carried through a thin film made of organic molecules represent a transformation of the FET technology regarding that based on Silicon. They offer in particular the possibility to manufacture low cost flexible electronics. This work is focused on the synthesis, the study and the use as active layer in n-type OFETs of novel, electron poor, couples of para- and meta-indacenodithiophenes isomers (para- and meta-IDT). First of all, an introduction to the field of n-type OFETs is presented, followed by the presentation of the synthesis of the IDT derivatives and the comparative analysis of their properties. Finally, the fabrication of the OFETs, their characterization and the optimization of their architecture is described. The performances recorded attest that these derivatives are of great interest for the n-type OFETs. Different 3π-2spiro IDT derivatives are also presented in order to study the IDTs intrinsic properties and to envisage their incorporation as host in phosphorescent organic light-emitting diodes.

<div>Organic mixed ion-electron conducting (OMIEC) polymers are capable of transporting both electrons and ions. This unique functionality underpins many emerging applications, including biosensors, electrochemical transistors, and batteries. The fundamental operating principles and structure-function relationships of OMIECs are still being investigated. Computational tools such as coarse-grained molecular dynamics (CGMD), which use simpler representations than in atomistic modeling, are ideal to study OMIECs, as they can explore the slow dynamics and large length scale features of polymers. Nevertheless, methods development is still required for CGMD simulations to accurately describe OMIECs.</div><div><br></div><div>In this thesis, two CGMD simulation approaches have been adopted. One is a so-called "top-down" approach to develop a generic model of OMIECs. Top-down models are phenomenological but capable of exploring a broad space of materials variables, including backbone anisotropy, persistence length, side-chain density, and hydrophilicity. This newly developed model was used to interrogate the effect of side-chain polarity and patterning on OMIEC physics. These studies reproduce experimentally observed polymer swelling while for the first time clarifying several molecular factors affecting charge transport, including the role of trap sites, polaron delocalization, electrolyte percolation, and suggesting side-chain patterning as a potential tool to improve OMIEC performance.</div><div><br></div><div>The second strategy pursued in this thesis is bottom-up CGMD modeling of specific atomistic systems. The bottom-up approach enables CGMD simulations to be quantitatively related to specific materials; yet, the sources of error and methods for addressing them have yet to be systematically established. To address this gap, we have studied the effect of the CG mapping operator, an important CG variable, on the fidelity of atomistic and CGMD simulations. A major observation from this study is that prevailing CGMD methods are underdetermined with respect to atomistic training data. In a separate study, we have proposed a hybrid machine-learning and physics-based CGMD framework that utilizes information from multiple sources and improves on the accuracy of ML-only bottom-up CGMD approaches. </div>

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第20815号 / 工博第4419号 / 新制||工||1687(附属図書館) / 京都大学大学院工学研究科分子工学専攻 / (主査)教授 関 修平, 教授 佐藤 啓文, 教授 梶 弘典 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

<p>Radical polymers bearing open-shell moieties at their pendant sites offer potential advantages in processing, stability, and optoelectronic properties compared to conventional doped conjugated polymers. The rapid development of radical-containing polymers has occurred across various applications in energy storage devices and electronic systems. However, significant gaps still exist in understanding the key structure-property-function relationships governing charge transport phenomena in these materials. Most reported radical conductors primarily rely on (2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPO) radicals, which raises fundamental questions about the ultimate limits of charge transport capabilities and the impact of radical chemistry choice on material deficiencies. Moreover, an understanding gap persists when it comes to connecting the computable electronic features of individual units and the charge transport behavior of these materials in condensed phases. This dissertation seeks to address these gaps by developing a molecular understanding of charge transport in radical-bearing materials through a combined computational and experimental approach.</p> <p><br></p> <p>The initial stage of this dissertation investigated the impact of dimeric orientations and interactions on charge transport by conducting a density functional theory (DFT) study on a diverse set of open-shell chemistries relevant to radical conductors. The results revealed the anomalously high reorganization energies of the TEMPO radical due to strong spin-localization, which may result in inefficient charge transfer. Additionally, a significant mismatch was identified between dimeric conformations favored by intermolecular interactions and those maximizing charge transfer. This study provided new insights into the impact of steric hindrance and spin delocalization on elementary charge transfer steps and suggests opportunities for exploiting directing interactions to enhance charge transport in these materials.</p> <p><br></p> <p>Building upon these findings, we established a direct relationship between the molecular architecture and intrinsic charge transport properties. To accomplish this, single-molecule characterization methods (i.e., break junction techniques) were implemented to study the nanoscale charge transport properties of radical-containing oligomeric nonconjugated molecules. Temperature-dependent measurements and molecular modeling revealed that the presence of radicals improves tunneling at the nanoscale. Integrating open-shell moieties into nonconjugated molecular structures significantly enhances charge transport, thereby characterizing charge transport through radicals at the individual level and opening new avenues for implementing molecular engineering in the field of nanoelectronics.</p> <p><br></p> <p>To further connect the electronic properties of repeat units with the condensed-phase charge transport behavior of radical polymers, a quantum chemical study was carried out to explicitly evaluate the interplay between polymer design, open-shell chemistries, and intramolecular charge transport. After comprehensive conformational sampling of the configurational space of radical polymers, we determined their anticipated intrachain charge transport values by utilizing graph-based transport metrics. We show that charge transport in radical polymers primarily hinges on the choice of radical chemistry, which in turn affects the optimal selection of backbone chemistry and spacer group to ensure proper radical alignment and prevent undesired trap states. These findings highlight the potential for a substantial synthetic exploration in radical polymers for radical conductors.</p> <p><br></p> <p>In summary, this dissertation provides compelling evidence of radical-mediated charge transport and suggests potential design guidelines to enhance the charge transfer behavior of radical-containing polymer materials. Furthermore, these findings inform future research directions in fine-tuning molecular engineering and modular design to enable the development of radical-based materials and their end-use applications in organic electronics.</p>

Organic field effect transistors (OFETs) are of significant research interest due to their promising applications in large area, low-cost electronic devices such as flexible displays, sensor arrays, and radio-frequency identification tags. A major bottleneck in fabricating highperformance OFET is the large interfacial barrier between the metal electrodes and organic semiconductors (OSC) which results in an inefficient charge injection. Carbon nanotubes (CNTs) are considered to be a promising electrode material which can address this challenge. In this dissertation, we demonstrate fabrication of high-performance OFETs using aligned array CNT electrodes and investigate the detailed electronic transport properties of the fabricated devices. The OFETs with CNT electrodes show a remarkable enhancement in the device performance such as high mobility, high current on-off ratio, higher cutoff frequency, absence of short channel effect and better charge carrier injection than those OFETs with metal electrodes. From the low temperature transport measurements, we show that the charge injection barrier at CNT/OSC interface is smaller than that of the metal/OSC interface. A transition from direct tunneling to Fowler-Nordheim tunneling observed in CNT/OSC system shows further evidence of low injection barrier. A lower activation energy measured for the OFETs with CNT electrodes gives evidence of lower interfacial trap states. Finally, OFETs are demonstrated by directly growing crystalline organic nanowires on aligned array CNT electrodes. In addition to investigating the interfacial barrier at CNT/OSC interface, we also studied photoconduction mechanism of the CNT and CNT/OSC nanocomposite thin film devices. We found that the photoconduction is due to the exciton dissociations and charge carrier separation caused by a Schottky barrier at the metallic electrode/CNT interface and diffusion of the charge iv carrier through percolating CNT networks. In addition, it is found that photoresponse of the CNT/organic semiconductor can be tuned by changing the weight percentage of CNT into the organic semiconductors.