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1	Spectroscopie des transitions excitoniques dans des puits quantiques GaN/AlGaN Rakotonanahary, Georges 15 April 2011 (has links) Ce travail de thèse porte sur l’étude des propriétés optiques et électroniques des puits quantiques de GaN / AlGaN grâce à des techniques classiques de réflectivité résolue en angle et de photoluminescence, ainsi qu’avec la technique de photoluminescence résolue temporellement. Les expériences de photoluminescence en régime continu ont permis d’estimer les énergies des transitions excitoniques qui sont également accessibles en réflectivité. Ces techniques ont ainsi permis de mettre en évidence l’effet Stark dans les puits quantiques GaN / AlGaN. L’effet Stark sur les énergies de transition est cohérent avec la théorie des fonctions enveloppes. Les spectres de réflectivité permettent d’accéder à la force d’oscillateur des excitons grâce à leur modélisation par le formalisme des matrices de transfert, prenant en compte les phénomènes d’élargissement homogène et inhomogènes des transitions optiques. Enfin, les mesures de photoluminescence résolue en temps en fonction de la température, ont également permis d’extraire la force d’oscillateur qui est inversement proportionnelle au temps de recombinaison radiative. Cette étude a également permis de mettre en évidence l’effet Stark responsable de la diminution de la force d’oscillateur en fonction de l’épaisseur du puits quantique mais aussi en fonction de la composition d’aluminium. L’augmentation de l’épaisseur du puits entraîne une diminution du recouvrement des fonctions d’onde, et une augmentation de la composition d’aluminium intensifie le champ électrique et diminue également le recouvrement des fonctions d’onde. / This work deals with the study of optical and electronic properties of GaN / AlGaN quantum wells, by classical techniques of spectroscopy including angle resolved reflectivity or photoluminescence, but also by time resolved photoluminescence. The continuous wave photoluminescence experiments allowed estimating the energies of the excitonic transitions, which are also available through reflectivity. These techniques highlighted the Stark effect in GaN / AlGaN quantum wells. The influence of the Stark effect on the energies of the excitonic transitions is well reproduced by envelop functions theory. Reflectivity spectra give access to the oscillator strength via their fitting by transfer matrix formalism, taking in account both homogeneous and inhomogeneous broadenings of the optical transitions. Finally, time resolved photoluminescence measurements as a function of temperature were performed to extract the oscillator strength, which is proportional to the inverse of the radiative recombination time. This technique also highlighted the Stark effect which is responsible of the vanishing of the oscillator strength with the thickness of the well and the aluminium composition. Increasing of the quantum well’s thickness induces decreasing of wave functions overlap, as well as an increasing of the aluminium composition which intensifies the electric field and splits the wave functions. Puits quantiques Nitrure de allium Exciton Force d’oscillateur Effet Stark Réflectivité Photoluminescence TRPL Quantum wells Gallium nitride Exciton Oscillator strength Stark effect Reflectivity Photoluminescence TRPL
2	Spectroscopie des transitions excitoniques dans des puits quantiques GaN/AlGaN / Spectroscopy of excitonic transitions in GaN/AlGaN quantum wells Rakotonanahary, Georges 15 April 2011 (has links) Ce travail de thèse porte sur l’étude des propriétés optiques et électroniques des puits quantiques de GaN / AlGaN grâce à des techniques classiques de réflectivité résolue en angle et de photoluminescence, ainsi qu’avec la technique de photoluminescence résolue temporellement. Les expériences de photoluminescence en régime continu ont permis d’estimer les énergies des transitions excitoniques qui sont également accessibles en réflectivité. Ces techniques ont ainsi permis de mettre en évidence l’effet Stark dans les puits quantiques GaN / AlGaN. L’effet Stark sur les énergies de transition est cohérent avec la théorie des fonctions enveloppes. Les spectres de réflectivité permettent d’accéder à la force d’oscillateur des excitons grâce à leur modélisation par le formalisme des matrices de transfert, prenant en compte les phénomènes d’élargissement homogène et inhomogènes des transitions optiques. Enfin, les mesures de photoluminescence résolue en temps en fonction de la température, ont également permis d’extraire la force d’oscillateur qui est inversement proportionnelle au temps de recombinaison radiative. Cette étude a également permis de mettre en évidence l’effet Stark responsable de la diminution de la force d’oscillateur en fonction de l’épaisseur du puits quantique mais aussi en fonction de la composition d’aluminium. L’augmentation de l’épaisseur du puits entraîne une diminution du recouvrement des fonctions d’onde, et une augmentation de la composition d’aluminium intensifie le champ électrique et diminue également le recouvrement des fonctions d’onde. / This work deals with the study of optical and electronic properties of GaN / AlGaN quantum wells, by classical techniques of spectroscopy including angle resolved reflectivity or photoluminescence, but also by time resolved photoluminescence. The continuous wave photoluminescence experiments allowed estimating the energies of the excitonic transitions, which are also available through reflectivity. These techniques highlighted the Stark effect in GaN / AlGaN quantum wells. The influence of the Stark effect on the energies of the excitonic transitions is well reproduced by envelop functions theory. Reflectivity spectra give access to the oscillator strength via their fitting by transfer matrix formalism, taking in account both homogeneous and inhomogeneous broadenings of the optical transitions. Finally, time resolved photoluminescence measurements as a function of temperature were performed to extract the oscillator strength, which is proportional to the inverse of the radiative recombination time. This technique also highlighted the Stark effect which is responsible of the vanishing of the oscillator strength with the thickness of the well and the aluminium composition. Increasing of the quantum well’s thickness induces decreasing of wave functions overlap, as well as an increasing of the aluminium composition which intensifies the electric field and splits the wave functions. Puits quantiques Nitrure de allium Exciton Force d’oscillateur Effet Stark Réflectivité Photoluminescence TRPL Quantum wells Gallium nitride Exciton Oscillator strength Stark effect Reflectivity Photoluminescence TRPL
3	A Homologous Study of Lifetimes and Oscillator Strengths of Ultraviolet Transitions in Singly Ionized Lead, Tin, and Germanium Heidarian, Negar January 2017 (has links) No description available. Physics Astrophysics Atoms and Subatomic Particles Atomic structure oscillator strength lifetime singly ionized interstellar abundance Dirac Hartree Fock MCDHF beam foil spectroscopy lifetime measurement ANDC accelerator ion source decay curve correlation orbitals
4	Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films / Optische Eigenschaften organischer Halbleiter: von Submonolagen zu kristallinen Filmen Nitsche, Robert 12 April 2006 (has links) (PDF) We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica, glass, Au(111), and HOPG, the direct interpretation of the DRS signal is not feasible. Therefore, we have proposed a method by which the calculation of the optical constants n (index of refraction) and k (absorption index) of thin films on arbitrary substrates from just one spectral measurement (in our case the DRS) becomes possible. The results fulfill a priori a Kramers-Kronig consistency and no specific model is needed to express the spectral behavior of the optical constants. Based on our method, we have successfully calculated the optical constants, and therefore the absorption behavior, of films of different thickness of PTCDA on mica, glass, Au(111), and HOPG, as well as of HBC on mica, glass, and HOPG. Extrinsic effects due to island growth or the presence of a polarizable substrate (screening) have been accounted for. We have introduced a finite dipole model which considers the extended geometry and anisotropy of the organic molecules. The calculated absorption behavior is discussed in great detail in terms of spectral changes with varying film thickness, different growth modes, degree of ordering of the films, interactions with the substrates and oscillator strength. A direct observation of a monomer-dimer transition in solid films could be observed for the first time. Our results indicate an exciton delocalization over about 4 molecules for both molecules. Absorption Au(111) Differentielle Reflexionsspektroskopie Dipolmodell Exzitonen Glas Glimmer Graphit HBC HOPG Kramers-Kronig Oszillatorstärke PTCDA dünne Filme optische Eigenschaften optische Konstanten Au(111) Differential Reflectance Spectroscopy Glass HBC HOPG Kramers-Kronig PTCDA absorption dielectric constants dipole model excitons graphite mica optical constants optical properties oscillator strength thin films ddc:530 rvk:UP 3050 Absorption Dipol Dünne Schicht Exziton Glimmer Gold Graphit Optische Eigenschaft Optische Konstante Oszillatorstärke Perylendianhydrid Reflexionsspektroskopie
5	Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films Nitsche, Robert 23 November 2005 (has links) We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica, glass, Au(111), and HOPG, the direct interpretation of the DRS signal is not feasible. Therefore, we have proposed a method by which the calculation of the optical constants n (index of refraction) and k (absorption index) of thin films on arbitrary substrates from just one spectral measurement (in our case the DRS) becomes possible. The results fulfill a priori a Kramers-Kronig consistency and no specific model is needed to express the spectral behavior of the optical constants. Based on our method, we have successfully calculated the optical constants, and therefore the absorption behavior, of films of different thickness of PTCDA on mica, glass, Au(111), and HOPG, as well as of HBC on mica, glass, and HOPG. Extrinsic effects due to island growth or the presence of a polarizable substrate (screening) have been accounted for. We have introduced a finite dipole model which considers the extended geometry and anisotropy of the organic molecules. The calculated absorption behavior is discussed in great detail in terms of spectral changes with varying film thickness, different growth modes, degree of ordering of the films, interactions with the substrates and oscillator strength. A direct observation of a monomer-dimer transition in solid films could be observed for the first time. Our results indicate an exciton delocalization over about 4 molecules for both molecules. info:eu-repo/classification/ddc/530 ddc:530

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