Thesis (M.S.)--University of Missouri-Columbia, 2006. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 14, 2007) Vita. Includes bibliographical references.

Thesis (Ph. D.)--Lehigh University, 2006. / Includes vita. Includes bibliographical references (leaves 121-133).

Dual gate MOSFET structures such as FinFETs are widely regarded as the most promising option for continued scaling of silicon based transistors after 2010. This work examines key process modules that enable reduction of both device area and fin width beyond requirements for the 16nm node. Because aggressively scaled FinFET structures suffer significantly degraded device performance due to large source/drain series resistance (RS/D), several methods to mitigate RS/D such as maximizing contact area, silicide engineering, and epitaxially raised S/D have been evaluated.

With the development of modern electronics, the demand for high quality power supplies has become more urgent than ever. For power MOSFETs, maintaining the trend of reducing on-state resistance (conduction loss) without sacrificing switching performance is a severe challenge. In this work, our research is focused on implementing strained silicon and silicon germanium in power MOFETs to enhance carrier mobility, thus achieving the goal of reducing specific on-state resistance. We propose an N-channel super-lattice trench MOSFET, a P-channel sidewall channel trench MOSFET and P-Channel LDMOS with strained Si/SiGe channels. A set of fabrication processes highly compatible with conventional Si technology is developed to fabricate proposed devices. The mobility enhancement is observed to be 20%, 40% and 35% respectively for N-channel, Pchannel trench MOSFET and LDMOS respectively and the on-state resistance is reduced by 10%, 20% and 22% without sacrificing other device performance parameters.

<p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p> / Thesis / Master of Engineering (MEngr)

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abstract: Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments - air, vacuum and oxygen was done. Electrical and optical characterization was carried out before and after annealing. The degree of reversal in the degradation in electrical properties of the thin films upon annealing in oxygen was assessed by subjecting samples to subsequent vacuum anneals. To further increase the conductivity of the IGZO films, Ag layers of various thicknesses were embedded between two IGZO layers. Optical performance of the multilayer structures was improved by susceptor-assisted microwave annealing and furnace-annealing in oxygen environment without compromising on their electrical conductivity. The post-processing of the films in different environments was used to develop an understanding of mechanisms of carrier generation, transport and optical absorption. This study establishes IGZO as a viable transparent conductor, which can be deposited at room-temperature and processed by thermal and microwave annealing to improve electrical and optical performance for applications in flexible electronics and optoelectronics. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2011

En dépit du développement rapide de la médecine, les maladies cardiovasculaires restent la première cause de mortalité dans le monde. En France, chaque année, plus de 50 000 personnes meurent subitement en raison d'arythmies cardiaques. L'identification des patients à risque élevé de décès soudain est toujours un défi. Pour détecter les arythmies cardiaques, actuellement Holter est généralement utilisé pour enregistrer les signaux électrocardiogramme (ECG) à 1~3 dérivations pendant 24h à 72h. Cependant l'utilisation de Holter est limitée parmi la population en raison de son encombrement (pas convivial) et de son coût. Un Holter mono puce portable nommé SoC-Holter qui permet d'enregistrer 1 à 4 dérivations est introduit. Le déploiement d'un réseau de capteurs sans fil exige que chaque SoC-Holter soit peu encombrant et peu cher, et consomme peu d’énergie. Afin de minimiser la consommation d'énergie et le coût du système, la technologie Complementary Metal Oxide Semiconductor (CMOS) (0.35μm) est utilisée pour la première implémentation de SoC-Holter. Puis une nouvelle méthode de détection basée sur Acquisition Comprimée (CS) est introduite pour résoudre les problèmes de consommation d'énergie et de capacité de stockage de SoC-Holter. Le principe premier de cette plate-forme est d'échantillonner les signaux ECG sous la fréquence de Nyquist ‘sub-Nyquist’ et par la suite de classer directement les mesures compressées en états normal et anormal. Minimiser le nombre de fils qui relient les électrodes à la plate-forme peut rendre l’utilisateur de SoC-Holter plus confortable, car deux électrodes sont très proches sur la surface du corps. La différence ECG enregistrée est analysée à l'aide de Vectocardiogramme (VCG). Les résultats expérimentaux montrent qu'une approche intégrée, à faible coût et de faible encombrement (SoC-Holter) est faisable. Le SoC-Holter consomme moins de 10mW en fonctionnement. L'estimation des paramètres du signal acquis est effectuée directement à partir de mesures compressées, éliminant ainsi l'étape de la reconstruction et réduisant la complexité et le volume des calculs. En outre, le système fournit les signaux ECG compressés sans perte d'information, de ce fait il réduit significativement la consommation d'énergie pour l'envoi de message et l’espace de stockage mémoire. L'effet de placement des électrodes est évalué sur la QRS complexe lorsqu'il a enregistré avec deux électrodes adjacentes. La méthode est basée sur l'algorithme de ‘QRS-VCG loop alignment’. La méthode moindre carré est utilisée pour estimer la corrélation entre une boucle VCG observée et une boucle de référence en respectant les transformations de rotation et la synchronisation du temps. Les emplacements d'électrodes les moins sensibles aux interférences sont étudiés. / According to the figures released by World Health Organization (WHO), cardiovascular disease is the number one cause of death in the world. In France every year more than 50,000 people die suddenly due cardiac arrhythmias. Identification of high risk sudden death patients is still a challenge. To detect cardiac arrhythmias, currently Holter is generally used to record 1~4 leads electrocardiogram (ECG) signals during 24h to 72h. However the use of Holter is limited among the population due to its form factor (not user-friendly) and cost. An integrated single chip wearable Holter named SoC-Holter that enables to record 1 to 4 leads ECG is introduced. Deployment of wireless sensor network requires each SoC-Holter with less power consumption, low-cost charging system and less die area.To minimize energy consumption and system cost, Complementary Metal Oxide Semiconductor (CMOS) technology (0.35μm) is used to prototype the first implementation of SoC-Holter. Then a novel method based on Compressed Sensing (CS) technique is introduced for solving the problems of power consumption and storage capacity of SoC-Holter. The main principle underlying this framework is to sample analog signals at sub-Nyquist rate and to classify directly compressed measurement into normal and abnormal state. Minimizing the wire connected electrodes to the platform can make the carrier more comfortable because two electrodes are attached closely on the surface of the body. Recording difference ECG is analyzed using Vectorcardiogram (VCG) theory. Experimental results show that an integrated, low cost, and user-friendly SoC-Holter is feasible. SoC-Holter consumes less than 10mW while the device is operating. It takes advantage of estimating parameters directly from compressed measurements, thereby eliminating the reconstruction stage and reducing the computational complexity on the platform. In addition, the framework provides compressed ECG signals without loss of information, reducing significantly the power consumption for message sending and memory storage space. The effect of electrode placement is evaluated by estimating QRS complex in recorded ECG signals by two adjacent electrodes. The method is based on the QRS-VCG loop alignment algorithm that estimates Least Square (LS) between an observed VCG loop and a reference loop with respect to the transformations of rotation and time synchronization. The electrode location with less sensitive to interference is investigated.