Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references (leaves 111-115). Also available in electronic version.

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references. Also available in electronic version.

Non conventional gate insulators for MOS devices are generally dielectrics that depart considerably from the classic Si0₂ used extensively in this technology. The work presented here reflects the research and development of an existing compound, Ta₂0₅, and its application as a gate insulator for both MOS capacitors and transistors. The oxide is grown both thermally and anodically from pure sputtered tantalum metal over silicon wafers. Succesful dielectrics suitable for gate insulators were obtained using both methods. High relative permittivity (≃26-28) being characteristic of tantalum pentoxide, offers considerable advantage over classic silicon dioxide gate insulators, however higher leakage currents (100 to 1000 times greater) were encountered in MOS Capacitor samples at room temperature. A method for processing the tantalum metal was developed using the liftoff technique, and it was successfully applied to both MOS capacitors and field effect transistors. Furthermore, devices were fabricated in the form of MOS Transistors, which exhibited good Id vs. Vds characteristics, with Vgs as a parameter. Gate leakage currents were low, as a double dielectric Ta₂0₅ over Si0₂ structure was used as gate insulator. A small signal model of this class of devices is presented, that takes into account the non zero gate leakage current. Another successful technique, interfacial oxidation of Ta₂0₅ over Si, was used in fabricating MOS Capacitors that yielded also low leakage currents and high specific capacitances. The purpose of this Thesis is to report the development at the University of British Columbia of the double gate insulator MOSFET technology based on the Tantalum Pentoxide-Silicon Dioxide (Ta₂0₅/Si0₂) heteromorphic structure. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

A novel structure related to Seperation by Implanted Oxygen (SIMOX) of NiSi2/SiO2/Si is studied for two primary reasons: the importance of metal silicide and insulating oxide in IC devices and the difficulty of direct growth of crystalline silicide on amorphous substrates.

Stannic oxide films on glass, deposited by th ·spray technique, are found to be n-type semiconductors. The large carrier concentration (~10¹⁹/cm³) of these films causes the donor level to blend into an impurity band. Annealing the stannic oxide film results in a diffusion of glass components on the film surface which is also accompanied by the increase in the sheet resistance. Donors such as antimony, phosphorus and tellurium raise the infrared absorption and carrier concentration and lower the sheet resistance and extrinsic activation energy. At higher concentrations (≥ 5-10 mole%) the impurities do not act like dopants, instead they become the bulk part of the film which causes an increase in the sheet resistance, infrared transmittance and the extrinsic gap energy. Addition of acceptors like indium and thallium shows an increase in the sheet resistance resulting from the neutralization of the conduction electrons. This also causes the impurity band to shrink and show an increase in the extrinsic activation energy and near infrared transmission. / Master of Science

No description available.

A dissertation submitted to the Faculty of Science, Wits University, in fulfilment of the requirements for the degree of Master of Science. 30 March 2016. / Bismuth ferrite BiFeO3 is a transition metal oxide that exhibits both antiferromagnetic and ferroelectric orderings and is termed a magnetoelectric multiferroic. These functional properties make it crucial for applications in various nanoelectronic devices and sensors. However, the integration of BiFeO3 in devices requires the scaling down of bulk BiFeO3 to nano dimensional length scales in thin lm format. For this purpose, the elements of the elastic constant tensor of BiF eO3 thin lms are requisite, especially in multilayered or single layer-on-substrate device con gurations. It is thus essential that mechanical properties of BiFeO3 thin lms be established due to their size and growth mode dependence. Therefore, the study aims to determine the propagation of the surface acoustic waves and the elastic constants of BiFeO3 BFO thin lms in order to tailor the mechanical properties for device applications. In this approach the e ect of morphology and microstructure on the elastic constants has been investigated. / MT2016

This dissertation explores the characteristics of Monotonic-Static CMOS and its potential applications in leakage reduction in ultra scaled Bulk-Si technology with significant gate leakage currents. Using test circuits consisting of different configurations of 16-bit lookahead adders, we performed a comparison among static, monotonic static and domino logic in terms of various properties including power, delay, noise margin and area. Comparisons were done over a wide range of possible transistor widths to fully characterize the tradeoffs for each circuit type. Experimental results show that MS-CMOS has potential advantages in some situations in terms of stand-by power, evaluation speed and noise margin in such a technology.

Thesis (M.S.)--Brigham Young University. Dept. of Electrical and Computer Engineering, 2004. / Includes bibliographical references (p. 71-72).

Thesis (M. App. Sc.)--Carleton University, 2004. / Includes bibliographical references (p. 77-78). Also available in electronic format on the Internet.