Non-volatile memories are an emerging storage technology with wide applica- tions in many important areas. This study focuses on new storage techniques for flash memories and phase-change memories. Flash memories are currently the most widely used type of non-volatile memory, and phase-change memories (PCMs) are the most promising candidate for the next-generation non-volatile memories. Like magnetic recording and optical recording, flash memories and PCMs have their own distinct properties, which introduce very interesting data storage problems. They include error correction, cell programming and other coding problems that affect the reliability and efficiency of data storage. Solutions to these problems can signifi- cantly improve the longevity and performance of the storage systems based on flash memories and PCMs. In this work, we study several new techniques for data storage in flash memories and PCMs. First, we study new types of error-correcting codes for flash memories – called error scrubbing codes –that correct errors by only increasing cell levels. Error scrubbing codes can correct errors without the costly block erasure operations, and we show how they can outperform conventional error-correcting codes. Next, we study the programming strategies for flash memory cells, and present an adaptive algorithm that optimizes the expected precision of cell programming. We then study data storage in PCMs, where thermal interference is a major challenge for data reliability. We present two new coding techniques that reduce thermal interference, and study their storage capacities and code constructions.

Les mémoires à changement de phase (PCRAM) sont l'un des candidats les plus prometteurs pour la prochaine génération de mémoires non-volatiles du fait de leurs excellentes vitesses de fonctionnement et endurance. Cependant, deux inconvénients majeurs nécessitent une amélioration afin de permettre leur percée sur le marché des mémoires, à savoir un temps de rétention court à hautes températures et une consommation électrique trop importante. Cette thèse s'intéresse au développement de nouveaux matériaux à changement de phase afin de remplacer le matériau standard Ge2Sb2Te5, inadapté aux applications mémoires embarquées fonctionnant à hautes températures. Le comportement des matériaux binaires GeTe et GeSb a ainsi été évalué et comparé au matériau référence lors de la cristallisation de l'amorphe 'tel que déposé' mais aussi de l'amorphe 'fondu trempé'. En effet, il est important d'étudier le matériau dans son état amorphe 'fondu trempé' pour être au plus près de l'état du matériau cyclé dans les dispositifs. Ainsi, le mécanisme de cristallisation du GeTe déterminé par l'étude de la cristallisation de l'amorphe 'fondu trempé' par recuit laser est en accord avec l'observation MET in situ (recuit thermique) de la cristallisation. L'incorporation d'éléments 'dopants' dans ces matériaux binaires a également été évaluée afin d'augmenter à nouveau la stabilité thermique des matériaux non dopés. Certains éléments 'dopants' permettent une diminution du courant de reset, ou un retard à la formation de 'voids' au cours des cycles. / Phase Change Memories are suitable for the next generation of non volatiles memories due to high programmation speed and endurance. However, two major improvements need to be made in order to enter memories market, the short retention time at high temperature, and the important electric consumption. This thesis focuses on the development of new phase change materials to replace the reference material, Ge2Sb2Te5, insuitable for embedded memories applications working at high temperatures. The behavior of binary compounds GeTe and GeSb has been investigated and compared to the reference material during both the crystallization of the « as deposited » amorphous and the « melt quenched » amorphous materials. Indeeed it is important to study the « melt quenched » amorphous state of the material to be as close as possible to the cycled material in the devices. So, the crystallization mechanism of GeTe checked by the crystallization study of the amorphous « melt quenched » by laser annealing is in agreement with the in situ TEM observation (thermal annealing) of the crystallization. The addition of “doping” elements in the binary compounds has also been performed to improve the thermal stability of amorphous undoped materials. These “doping” elements allow a current reset decrease, or a later formation of « voids » during cycling.

Les mémoires à changement de phase sont l'un des candidats les plus prometteurs pour la prochaine génération de mémoires non-volatiles. Un intense effort de recherche est requis pour optimiser les matériaux à changement de phase (PC) utilisés dans ces mémoires. En particulier, il a été démontré que le dopage améliore les propriétés de rétention des dispositifs. Par ailleurs, l'étude des effets de réduction de taille et des effets des matériaux d'interface sur les propriétés des matériaux à changement de phase est encore un sujet de recherche ouvert. Dans ce contexte, la première partie de la thèse est dédiée à l'investigation de la structure locale de GeTe amorphe dopé avec C ou N. L'effet du dopage sur la structure a été observé expérimentalement via l'apparition d'un nouveau pic dans la fonction de distribution de paires de GeTe dopé, ce qui montre la formation d'une nouvelle liaison interatomique absente dans le matériau non dopé. La présence de nouvelles configurations incluant le carbone et l'azote a été confirmée par des simulations ab initio. L'objet de la deuxième partie de la thèse est l'influence de la réduction de taille sur la cristallisation de Ge2Sb2Te5 (GST). Des agrégats nanométriques de GST ont été fabriqués par pulvérisation puis déposés et étudiés par diffraction des rayons X en utilisant le rayonnement synchrotron. Dans l'état cristallisé une très forte déformation positive des agrégats est observée et attribuée à la matrice d'Al2O3 qui entoure les agrégats. La température de cristallisation des agrégats est de 25°C plus élevée que celle d'un film de GST de 10 nm déposé dans les mêmes conditions. Ce résultat est encourageant pour les futurs développements des mémoires à changement de phase car il montre que l'effet de réduction de taille sur la température de cristallisation peut-être faible. La troisième et dernière partie de la thèse est dédiée à l'investigation des effets des matériaux d'interface sur la température de cristallisation de films minces de GeTe et GST par des mesures de réflectivité et de diffraction des rayons X. Pour les deux matériaux, la température de cristallisation de films de 100 nm est plus grande pour une interface avec du Ta que pour une interface avec du TiN ou du SiO2. Une différence aussi marquée n'était jamais montré auparavant. Les résultats suggèrent que l'interface SiO2/GeTe est énergétiquement favorable pour la nucléation et la croissance de grains avec une orientation préférentielle et que les mécanismes de nucléation et croissance sont différents pour différents matériaux d'interface. / Phase Change Memories (PCM) are one of the best candidates for the next generation of non volatile memories. A great research effort is still needed in order to optimize the properties of phase change (PC) materials which are used in PCM devices. In particular, doping has been demonstrated to improve retention in devices. Moreover, a study of the effect of scaling and interface material on PC materials properties is still an open research field. In this context, the first part of the thesis is dedicated to investigate the local structure of C or N doped amorphous GeTe. The impact of doping is observed experimentally with the appearance of a new peak in the pair distribution function of doped GeTe, indicating the formation of a bond at a new distance that is absent in the undoped amorphous material. The presence of new environments involving carbon and nitrogen is confirmed through ab initio simulations. The subject of the second part of this thesis is the impact of confinement on Ge2Sb2Te5 (GST) crystallization mechanism. Nano-sized clusters of GST have been made by sputtering, deposited and then studied through X-ray diffraction using synchrotron radiation. The crystalline clusters experience a tensile strain that can be ascribed to the effect of the embedding Al2O3 matrix. Their crystallization temperature has been found to be only 25°C higher than the one observed for a thin film of GST of 10 nm deposited under the same conditions. This result is positive for the future development PCM because it indicates that the scaling effect on the crystallization temperature in phase change material can be small. The third and last part of the thesis is dedicated to the investigation of the interface material effect on the crystallization temperature of GeTe and GST thin films through reflectivity and X-ray diffraction measurements. In both GeTe and GST film 100 nm thick interfaced with Ta the crystallization temperature is higher than in the case of TiN or SiO2 interface. Such an interface effect on relatively thick films was never reported before. The results suggest that the SiO2/GeTe interface is energetically favourable for the nucleation and growth of grains with a preferred orientation and that nucleation and growth mechanisms are different for different interface materials.

Orientadores: Guido Costa Souza de Araújo, Rodolfo Jardim de Azevedo / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Computação / Made available in DSpace on 2018-08-23T10:06:28Z (GMT). No. of bitstreams: 1 Hoffman_Caio_M.pdf: 5338735 bytes, checksum: d93e38ef7846b0ba3f7f3b0ea459fc67 (MD5) Previous issue date: 2013 / Resumo: Phase-change memory (PCM) traz novos ensejos para indústria eletrônica. Devido às projeções de alta escalabilidade do processo de fabricação da PCM, cogita-se usá-la como memória principal em sistemas de computação, substituindo à tradicional DRAM cujos problemas de miniaturização do processo de fabricação demandam tecnologias ainda desconhecidas. Contudo, PCM tem problemas de durabilidade e técnicas de recuperação de falhas robustas são extremamente necessárias para recuperação e prolongamento do seu tempo de vida, medido em número de escritas. As técnicas mais comuns de recuperação de falhas são os códigos de correção de erros. Porém, outras técnicas de recuperação vêm sendo propostas na literatura, aproveitando as características de não-volatilidade da PCM. Neste trabalho, usando uma modelagem matemática, analisou-se como a probabilidade de bit-ip dos principais códigos de correção de erros { paridade, SECDED e BCH { e das principais técnicas de recuperação de falhas { ECP e SAFER { está relacionada _a durabilidade da PCM. A partir da taxa de bit-ip medida através da execução do SPEC2006 e por meio dos modelos matemáticos, comparou-se os resultados dos modelos de simulação utilizando-se a probabilidade teórica de 50% e a taxa obtida experimentalmente de 15%. Os resultados revelaram uma visível degradação da durabilidade dos mecanismos de recuperação de falhas que usam códigos de correção de erros, contradizendo os resultados da literatura. A técnica ECP foi à única que não mostrou degradação. Além disso, uma análise de eficiência energética foi feita, relacionando durabilidade da PCM e o consumo de energia. Novamente, a técnica ECP se destacou nos resultados, como também a técnica SAFER. Finalmente, foram propostos modelos analíticos probabilísticos das técnicas ECP, SECDED e uma análise da técnica PAYG baseada no modelo analítico da ECP / Abstract: Phase-change memory brings new opportunities for the electronics industry. Due to projections of high scalability of the fabrication process, PCM is seen as a new main memory in computing systems, replacing the traditional DRAM, whose scale problems require new future technologies that are still unknown. However, PCM has low endurance when compared with DRAM and robust failure recovery techniques are required to increase its lifetime. To address that, some error correcting techniques have been proposed, based on the non-volatile features of the PCM memories. In this work, we model and analyze the bit-ip probabilities of five such techniques (ECP, parity, SECDED, SAFER and BCH), in order to evaluate its impact to the wear out of the PCM. Using the bit-ip rate of 15%, obtained experimentally from the execution of the SPEC2006 benchmark, we mathematically modeled and simulated these techniques using both an empirical and theoretical probability rates. Our results show a clear degradation in techniques that use error-correcting codes, contradicting the previous results in the literature. Only ECP has not shown any degradation. We have also done power analyses of the above listed techniques so as to relate the endurance and the energy required by each technique. Again, the ECP stood out in the results, like SAFER as well. Finally, analytical probabilistic models for ECP and SECDED were proposed and an analysis of PAYG technique (based on ECP's analytical model) was performed / Mestrado / Ciência da Computação / Mestre em Ciência da Computação

De nos jours, les nouvelles technologies ne cessent d'évoluer et de former une partie intégrante dans la vie quotidienne de chacun. Ces dernières profitent du développement de systèmes électroniques complexes qui nécessitent l'utilisation de composants mémoires de plus en plus performants et présentant de grandes capacités de stockage. Ainsi, dans cette course à la miniaturisation, la technologie Flash jusqu'ici prépondérante sur le marché des mémoires non volatiles laisse aujourd'hui entrevoir ses limites. En conséquence, différentes mémoires émergentes résistives sont développées et parmi celles-ci se trouvent les mémoires à changement de phase PCRAM qui présentent un grand intérêt dans le monde des mémoires non volatiles grâce à leur bonne capacité de réduction d'échelle ainsi que leur coût réduit par rapport aux mémoires Flash. Cependant, pour être compétitives face aux autres technologies et pour prétendre à des applications embarquées, elles doivent répondre à plusieurs challenges tels que réduire leur courant de programmation, augmenter leur vitesse de programmation et améliorer leur stabilité thermique. Pour cela, différentes voies sont explorées dans la littérature, notamment l'utilisation d'architectures innovantes ou de matériaux à changement de phase alternatifs. Dans cette thèse, nous nous sommes intéressés à l'investigation des mécanismes de défaillance qui affectent la stabilité thermique et temporelle des mémoires à changement de phase, plus précisément la rétention de l'état RESET et la stabilité des états programmés affectée par le phénomène de « drift ». Le développement de matériaux alternatifs utilisant une stoechiométrie optimisée ou incorporant un dopage nous permet d'obtenir des dispositifs performants d'un point de vue électrique et présentant des propriétés de rétention satisfaisant les spécifications des applications embarquées en particulier l'automobile. De plus, grâce au développement d'une nouvelle procédure de pré-codage, ces dispositifs permettent de conserver les données préprogrammées sur la puce mémoire au cours de l'étape de soudure de cette dernière sur le circuit électronique. Ils constituent une solution prometteuse pour les applications de cartes sécurisées. Enfin, nous avons proposé une procédure de programmation optimisée qui permet de diminuer l'effet du drift de la résistance de l'état SET observé pour les matériaux alternatifs. Ensuite, nous avons montré via des mesures de bruit à basses fréquences que cet effet est dû à la relaxation structurale des zones amorphes présentes dans ces matériaux actifs. De plus, nous avons mis en évidence pour la première fois la diminution du bruit normalisé de l'état SET ainsi que l'influence majeure des défauts d'interfaces sur le bruit à basses fréquences de cet état. / Nowadays, new technologies are rising steadily and forming an integral part in the daily lives of everyone. They take advantage of the development of electronic systems for which the complexity requires the use of memory devices more and more efficient and with large storage capacities. Because of some performance degradation, the scaling of Flash technology who was so far predominant in the non-volatile memories market, is today reaching its limits. As a result, different emerging resistive memories are being developed. Among them, the phase-change memory technology PCRAM is very attractive because of its non-volatility, scalability, as well as reduced cost compared to standard Flash. Nevertheless, to compete with other technologies and to address the embedded applications market, PCRAM still face some challenges, such as decreasing the programming current densities, increasing the programming speed and increasing the thermal stability of the two memory states. For that purpose, different solutions have been tried in the literature, including using new device architectures and optimized phase-change materials. In this work, we are interested in investigating the failure mechanisms that affect thermal and temporal stability of phase change memories, in particular the retention of the RESET state and the stability of the programmed states disturbed by the drift phenomenon. The development of alternative materials using an optimized stoichiometry or incorporating doping allows us to achieve high electrical performance devices and to reach the required retention properties of embedded applications and particularly the automotive one. Moreover, thanks to the development of a new pre-coding procedure, these devices allow to keep stable the preprogrammed data on the memory chip during the soldering step of the latter on the electronic circuit. They represent a promising solution for Smart-Card applications. Finally, we have proposed an optimized programming procedure which enables to reduce the drift effect of the resistance of the SET state observed for optimized materials. This drift phenomenon was investigated by using low frequency noise measurements. Therefore, we have shown that this effect is due to the structural relaxation of amorphous parts in the active material. Besides, we highlighted for the first time the major influence of interface defects on the low-frequency noise of this state.

The ability to tune the properties over a wide range of values by changing the additives, composition, etc., has made chalcogenide glassy semiconductors, most interesting from both fundamental physics as well as technology point of view. In particular, the occurrence of the two network topological thresholds namely the Rigidity Percolation Threshold (RPT) and the Chemical Threshold (CT) and their influence on various properties of chalcogenide glasses have been of immense interest during the last three decades. The Rigidity Percolation Threshold (also known as the Stiffness Threshold or Mechanical Threshold) corresponds to the composition at which the material transforms from a floppy polymeric glass to a rigid amorphous solid, whereas at Chemical Threshold the sample tends towards an ordered state. Though the rigidity percolation has been considered for long to occur at a critical threshold defined by the constraint’s theory, the recent theoretical and experimental investigations have found the RPT to occur over a range of compositions. In systems exhibiting an extended rigidity percolation, two distinct transitions namely from a floppy to an isostatically rigid phase and from an isostatically rigid to a stressed rigid phase are seen. In the category of chalcogenide glasses, tellurides have been found to exhibit interesting properties including the phenomenon of electrical switching which finds applications in Phase Change Memories (PCM). Studies on various thermal, electrical and photoelectrical properties of glassy tellurides help us in identifying suitable materials for different technological applications. This thesis deals with Differential Scanning Calorimetric (DSC) & Temperature Modulated Alternating Differential Scanning Calorimetric (ADSC) studies, electrical switching investigations, photoconductivity & photothermal measurements on certain metal doped telluride glasses. The composition dependence of properties such as glass transition & crystallization temperatures, switching voltage, thermal diffusivity, photosensitivity, etc., have been analyzed to obtain information about topological thresholds, thermally reversing window, etc. The first chapter of thesis provides an overview of properties of amorphous semiconductors, in particular chalcogenide glasses. The local & defect structure, the electronic band structure & electrical properties, electrical switching behavior, etc., are discussed in detail. The theoretical aspects related to the experiments undertaken in this thesis work have also been described. The instrumentation used for various experiments conducted to measure thermal, electrical, photoelectrical and photothermal properties have been discussed in chapter two. The chapter three deals with the photocurrent measurements on As40Te60-xInx (7.5 ≤ x ≤ 16.5) glasses. In these samples, it has been found that the photocurrent increases with illumination, which is understood on the basis of the large dielectric constant and also due to the presence of a large number of positively charged defect states. Further, the composition dependence of the conductivity activation energy and the photosensitivity exhibit a maximum at x = 12.5 (<r> = 2.65) and a minimum at x = 15.0 (<r> = 2.70) which has been identified to be the Rigidity Percolation Threshold (RPT) and the Chemical Threshold (CT) respectively. The results of electrical switching, DSC and Photothermal Deflection (PTD) studies on As20Te80-xGax (7.5 ≤ x ≤ 18.5) glasses, undertaken to elucidate the network topological thresholds, are described in chapter four. It has been found that all the As20Te80-xGax glasses studied exhibit memory type electrical switching. The switching voltage (VT) of these glasses increases monotonically with x, in the composition range 7.5 ≤ x ≤ 15.0. The increase in VT with gallium addition leads to a local maximum at x = 15.0 and VT decreases with x thereafter, reaching a distinct minimum at x = 17.5. Based on the variation with composition of the electrical switching voltages, the composition x = 15.0 and x = 17.5 have been identified to be the rigidity percolation and chemical thresholds of the As20Te80-xGax glassy system respectively. Further, the DSC studies indicate that As20Te80-xGax glasses exhibit a single glass transition (Tg) and two crystallization reactions (Tc1 & Tc2) upon heating. There is no appreciable change in Tg of As20Te80-xGax glasses with the addition of upto about10 atom% of Ga, whereas a continuous increase is seen in the crystallization temperature (Tc1). It is interesting to note that both Tg and Tc1 exhibit a maximum at x = 15.0 and a minimum at x = 17.5, the compositions identified to be the RPT and CT respectively by the switching experiments. The composition dependence of thermal diffusivity estimated from the PTD signal, indicate the occurrence of an extended stiffness transition in As20Te80-xGax glasses, with the compositions x = 9.0 and x = 15.0 being the onset and the completion of an extended rigidity percolation. A maximum and a minimum are seen in the thermal diffusivity respectively at these compositions. Further, a second maximum is seen in the thermal diffusivity of As20Te80-xGax glasses, the Chemical Threshold (CT) of the glassy system. The fifth chapter of the thesis describes the ADSC, electrical switching and photocurrent measurements on Ge15Te85-xInx (1 ≤ x ≤ 11) glasses. It is found there is not much change in the Tg of Ge15Te85-xInx glasses in the composition range 1 ≤ x ≤ 3. An increase is seen in Tg beyond x = 3, which continues until x = 11. Further, the composition dependence of non-reversing enthalpy shows the presence of a thermally reversing window in the compositions range x = 3 and x = 7. Electrical switching studies indicate that Ge15Te85-xInx glasses exhibit threshold type of switching at input currents below 2 mA. It is observed that switching voltages decrease initially with indium addition, exhibiting a minimum at x = 3, the onset of the extended rigidity percolation as revealed by ADSC. An increase is seen in VT above x = 3, which proceeds till x = 8, with a change in slope (lower to higher) seen around 7 atom% of indium which corresponds to the completion of the stiffness transition. The reversal in trend exhibited in the variation of VT at x = 8, leads to a well defined minimum around x = 9, the chemical threshold of the Ge15Te85-xInx glassy system. Photocurrent measurements indicate that there is no photodegradation in Ge15Te85-xInx glasses with x < 3, whereas samples with x ≥ 3 show photodegradation behavior. The composition dependent variation in the glass transition temperature has been attributed for this behavior. Further, the composition dependence of photo sensitivity has been found to show the signatures of the extended rigidity percolation and the chemical threshold in Ge15Te85-xInx glasses. The last chapter of thesis (chapter six) summarizes the results obtained and also the scope of future work to be undertaken.