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Darbo tikslas yra ištirti neatkaitintų ir atkaitintų prie aukštų temperatūrų vakuume LaNiO3 sluoksnių Rentgeno fotoelektronų spektrus. Darbe aprašyti Rentgeno fotoelektronų spektroskopijos (RFS) (XPS- X-ray photoelectron spectroscopy) metodo, naudojamo įvairių medžiagų paviršių cheminei sudėčiai nustatyti, pagrindai. Pirmame skyriuje aprašyti: La- Ni oksidiniai junginiai ir jų tyrimų metodika, plonų nanostruktūrizuotų medžiagų sluoksnių nusodinimo iš dujų fazės (plazmos) metodas- magnetroninis dulkinimas (magnetron sputtering), aparatūra, XPSPeak programos pritaikymas Rentgeno fotoelektronų spektrų tyrimui bei jos naudojimo galimybės. Antrasis skyrius yra skirtas Rentgeno fotoelektroninių spektrų matavimų, naudojant spektrometrą XSAM 800 (Kratos Analytical, Didžioji Britanija) ypatumams ir bandinių gamybos metodikai aptarti. Trečiajame skyriuje pateikiami eksperimentiniai rezultatai gauti, matuojant LaNiO3-x Rentgeno fotoelektronų spektrus. Darbo pabaigoje yra pateikiamos išvados, kurios galėtų būti naudingos, tobulinant LaNiO3-x bandinių gamybos technologiją. / The aim of presented work was to investigate the X-ray photoelectron spectra (XPS) of LaNiO3-x thin films. The films were produced by DC magnetron sputtering. It is known that the temperature dependence of resistivity of as grown films has the metallic character. After the temperature annealing in the high vacuum condition this dependence changes to the semiconductor like character. XPS spectra of the oxygen region of as grown samples indicate that oxygen ions are in three states – O2-, hydroxyl groups (OH)-, and water. After the temperature annealing in the high vacuum condition oxygen ions are only in the two states - O2- and hydroxyl groups (OH)-. Thus the changes of the resistivity temperature dependence are caused by the changes of the oxygen ions system after the temperature annealing in the high vacuum. After temperatures processing in vacuum the samples some time have been sustained in atmospheric conditions, the temperature dependence of resistance again came back to an initial metal condition. This fact means that for the synthesis of qualitative thin layers it is necessary to change technological conditions of production.

Ultra-violet and visible light induced processes in small organic molecules play very important roles in many fields, e.g., environmental sciences, biology, material development, chemistry, astrophysics and many others. Thus it is of great importance to better understand the mechanisms behind these processes. To achieve this, a bottom-up approach is most effective, where the photo-induced dynamics occurring in the simplest organic molecule (ethylene) are used as a starting point. Simple substituents and functional groups are added in a controlled manner to ethylene, and changes in the dynamics are investigated as a function of these modifications. In this manner, the dynamics occurring in more complex systems can be explored from a known base. In this thesis, the excited state dynamics of small organic molecules are studied by a combination of time-resolved photoelectron spectroscopy and various computational methods in order to determine the basic rules necessary to help understand and predict the dynamics of photo-induced processes. The dynamics occurring in ethylene involve a double bond torsion on the ππ* excited state, followed by the decay to the ground state coupled with pyramidalization and hydrogen migration. Several different routes of chemical modification are used as the basis to probe these dynamics as the molecular complexity is increased. (i) When ethylene is modified by the addition of an alkoxyl group (-OCnH2n+1), a new bond cleavage reaction is observed on the πσ* state. When modified by a cyano (-CN) group, a significant change in the carbon atom involved in pyramidalization is observed. (ii) When ethylene used to build up small cyclic polyenes, it is observed that the motifs of the ethylene dynamics persist, expressed as ring puckering and ring opening. (iii) In small heteroaromatic systems, i.e., an aromatic ring containing an ethylene-like sub-structure and one or two non-carbon atoms, the type of heteroatom (N: pyrrole, pyrazole O: furan) gives rise to different bond cleavage and ring puckering channels. Furthermore, adding an aldehyde group (-C=O) onto furan, as a way to lengthen the delocalised ring electron system, opens up additional reaction channels via a nπ* state. The results presented here are used to build up a more complete picture of the dynamics that occur in small molecular systems after they are excited by a visible or UV photon, and are used as a basis to motivate further investigations. / <p>At the time of the doctoral defense, the following papers were unpublished and had a status as follows: Paper 5: Manuscript. Paper 6: Manuscript.</p>

The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the present research is to investigate the fundamental surface interactions between diffusion barriers and various low-k dielectric materials. Two major diffusion barriers¾ tatalum (Ta) and titanium nitride (TiN) are prepared by DC magnetron sputtering and metal-organic chemical vapor deposition (MOCVD), respectively. Surface analytical techniques, such as X-ray photoelectronic spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM) are employed. Ta sputter-deposited onto a Si-O-C low dielectric constant substrate forms a reaction layer composed of Ta oxide and TaC. The composition of the reaction layer varies with deposition rate (1 Å-min-1 vs. 2 Å-sec-1), but in both cases, the thickness of the TaC layer is found to be at least 30 Å on the basis of XPS spectra, which is corroborated with cross-sectional TEM data. Sputter-deposited Cu will not wet the TaC layer and displays facile agglomeration, even at 400 K. Deposition for longer time at 2 Å-sec-1 results in formation of a metallic Ta layer. Sputter deposited Cu wets (grows conformally) on the metallic Ta surface at 300 K, and resists significant agglomeration at up to ~ 600 K. Cu diffusion into the substrate is not observed up to 800 K in the UHV environment. Tetrakis(diethylamido) titanium (TDEAT) interactions with SiO2, Cu and a variety of low-k samples in the presence (~ 10-7 Torr or co-adsorbed) and absence of NH3 result in different products. TDEAT interactions with SiO2 are dominated by Ti interactions with substrate oxygen sites, and that Ti oxide/sub-oxide bond formation can proceed with relatively low activation energy. No Ti carbide or Si carbide formation is observed. Co-adsorption of TDEAT and NH3 on SiO2 at 120K followed by annealing to higher temperature results in enhanced Ti-N bond formation, which is stable against oxidation up to 900K in UHV. Similarly, continuous exposures of TDEAT on SiO2 at 500K in the presence of NH3 exhibit a relatively enhanced Ti-N spectral component. Co-adsorption of NH3 and TDEAT on Cu (poly) surface at 120K, followed by annealing to 500K, results in complete desorption of Ti, N or C-containing species from the Cu substrate. Reaction of TDEAT with a Cu surface at 500K yields a Ti-alkyl species via a b-hydride elimination pathway. TDEAT/Cu interactions are not observably affected by overpressures of NH3 of 10-7 Torr. TDEAT interaction with a porous carbon doped oxide low-k substrate at 700K demonstrates undissociated or partly dissociated Ti-NR species trapped in the dielectrics matrix due to its high porosity. In addition, carbide formation is observed from C(1s) XPS spectra. For a hydrocarbon low-k film, the majority sites (carbon) are highly unreactive towards TDEAT even at higher temperature due to a lack of functional groups to initiate the TDEAT/low-k surface chemistry.

by Yeung Sau Lai Catherine. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yeung Sau Lai Catherine. / Acknowledgments --- p.i / Abstract --- p.ii / Table of Contents --- p.iv / List of Figures --- p.vii / List of Tables --- p.ix / Chapter Chapter1 --- Introduction to the Study of Chinese antique objects using surface science techniques / Chapter 1.1 --- Surface Science --- p.1 / Chapter 1.2 --- Surface Science Techniques --- p.1 / Chapter 1.3 --- Study of Antiques Objects --- p.2 / Chapter 1.4 --- Chinese Antique --- p.4 / Chapter 1.5 --- Aims of the current study --- p.4 / Chapter 1.6 --- Reference --- p.7 / Chapter Chapter 2 --- Silicon on Chinese Bronze Seals / Chapter 2.1 --- Introduction --- p.8 / Chapter 2.2 --- Basic Principles of the analytical techniques --- p.9 / Chapter 2.2.1 --- Scanning electron microscopy (SEM) --- p.9 / Chapter 2.2.2 --- Energy dispersive x-ray analysis (EDX) --- p.9 / Chapter 2.2.3 --- X-ray Photoelectron spectroscopy (XPS) --- p.13 / Chapter 2.3 --- Sample --- p.16 / Chapter 2.4 --- Experimental --- p.18 / Chapter 2.4.1 --- Instrument --- p.18 / Chapter 2.4.2 --- Sampling --- p.18 / Chapter 2.5 --- Results and Discussion --- p.20 / Chapter 2.5.1 --- Chemical Composition --- p.20 / Chapter 2.5.2 --- Silicon content --- p.21 / Chapter 2.5.3 --- Sources of silicon --- p.21 / Chapter 2.5.4 --- Implication of high silicon content --- p.25 / Chapter 2.6 --- Conclusion --- p.28 / Chapter 2.7 --- Related studies --- p.28 / Chapter 2.8 --- Reference --- p.29 / Chapter Chapter 3 --- Surface analysis of Chinese Jade using Fourier Transform Infrared Spectroscopy with fixed angle reflectance technique / Chapter 3.1 --- Introduction --- p.30 / Chapter 3.2 --- principles of FTIR and specular reflectance technique --- p.31 / Chapter 3.2.1 --- General principles --- p.31 / Chapter 3.2.2 --- IR spectrometer --- p.31 / Chapter 3.2.3 --- Specular (External) Reflectance Technique --- p.33 / Chapter 3.2.4 --- Kramers-Kronig Transformation --- p.33 / Chapter 3.3 --- Sample (Chinese Jade from the Liang-zhu Culture) --- p.36 / Chapter 3.3.1 --- Background on use of Jade in China --- p.36 / Chapter 3.3.2 --- Nomenclature --- p.39 / Chapter 3.3.3 --- Mineralogy of Jade --- p.39 / Chapter 3.3.4 --- Liang-zhu Culture --- p.40 / Chapter 3.4 --- Experimental --- p.40 / Chapter 3.4.1 --- Instrument --- p.40 / Chapter 3.4.2 --- Sampling --- p.44 / Chapter 3.4.3 --- Data Treatment --- p.44 / Chapter 3.5 --- Results and Discussion --- p.44 / Chapter 3.5.1 --- Characteristic of Specular reflectance spectrum of Nephrite --- p.44 / Chapter 3.5.2 --- Reflectance spectrum of Liangzhu samples --- p.57 / Chapter 3.5.2.1 --- Comparison within sample --- p.57 / Chapter 3.5.2.2 --- Comparison among sample --- p.57 / Chapter 3.5.3 --- "Reflectance spectrum of heirloom pieces from the Art Museum, CUHK" --- p.58 / Chapter 3.5.4 --- Absorption peaks at 3000-2800cm-1 --- p.58 / Chapter 3.6 --- Conclusion --- p.58 / Chapter 3.7 --- Related studies --- p.61 / Chapter 3.8 --- Reference --- p.61 / Chapter Chapter 4 --- SIMS and TIMS Analysis on Lead Isotopes Ratio in Ancient Chinese Metallic Artifacts / Chapter 4.1 --- Introduction --- p.63 / Chapter 4.2 --- Background --- p.64 / Chapter 4.2.1 --- Lead isotope --- p.64 / Chapter 4.2.2 --- Aims of this study --- p.66 / Chapter 4.3 --- Basic principle of TIMS and SIMS --- p.67 / Chapter 4.4 --- Experimental --- p.68 / Chapter 4.4.1 --- Sample --- p.68 / Chapter 4.4.2 --- Instrument --- p.68 / Chapter 4.4.2.1 --- Thermal Ionisation mass spectrometry --- p.68 / Chapter 4.4.2.2 --- Secondary ion mass spectroscopy --- p.70 / Chapter 4.5 --- Results and Discussion --- p.72 / Chapter 4.5.1 --- Data Interpretation --- p.72 / Chapter 4.5.2 --- Standard deviation of SIMS data --- p.74 / Chapter 4.5.3 --- Possible use of SIMS data --- p.74 / Chapter 4.6 --- Conclusion --- p.76 / Chapter 4.7 --- References --- p.76 / Chapter Chapter 5 --- Analysis by Particle Induced X-ray emission technique / Chapter 5.1 --- Introduction --- p.79 / Chapter 5.2 --- Basic principle --- p.80 / Chapter 5.2.1 --- General principle --- p.80 / Chapter 5.2.2 --- Fundamental Set up --- p.80 / Chapter 5.2.3 --- Data analysis --- p.82 / Chapter 5.3 --- Experimental --- p.82 / Chapter 5.3.1 --- PIXE --- p.82 / Chapter 5.3.2 --- Sample --- p.82 / Chapter 5.4 --- Result --- p.85 / Chapter 5.5 --- Further studies --- p.85 / Chapter 5.6 --- Reference --- p.85 / Chapter Chapter 6 --- Conclusion / Chapter 6.1 --- Conclusion --- p.88 / Chapter 6.2 --- Further studies --- p.89

by Fong Hon Hang = 超薄二氧化硅的固定電荷分佈和電擊穿特性 / 方漢鏗. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Fong Hon Hang = Chao bo er yang hua gui de gu ding dian he fen bu he dian ji chuan te xing / Fang Hankeng. / ABSTRACT --- p.i / ACKNOWLEDGEMENTS --- p.iii / TABLE OF CONTENT --- p.iv / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xiv / LIST OF SYMBOLS --- p.xv / Chapter Chapter1 --- Background of the thesis work / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Stability of charge on oxide --- p.1 / Chapter 1.3 --- Defects in SiO2/Si --- p.2 / Chapter 1.4 --- Objectives of the thesis work --- p.4 / Chapter 1.5 --- Organization of the thesis --- p.5 / Bibliography for Chapter1 --- p.6 / Chapter Chapter2 --- Theory of X-ray Photoelectron Spectroscopy (XPS) and Surface Charge Spectroscopy (SCS) / Chapter 2.1 --- Introduction --- p.7 / Chapter 2.2 --- X-ray photoelectron spectrometry (XPS) --- p.8 / Chapter 2.2.1 --- Binding energy reference for semiconductors --- p.10 / Chapter 2.2.2 --- Measurement of surface Fermi level --- p.15 / Chapter 2.2.3 --- XPS quantitative analysis --- p.17 / Chapter 2.2.3.1 --- Electron Inelastic Mean free Path --- p.16 / Chapter 2.2.3.2 --- Atomic concentration of a homogeneous material --- p.17 / Chapter 2.2.3.3 --- Determination of overlayer thickness --- p.19 / Chapter 2.3 --- Surface charge Spectroscopy (SCS) --- p.21 / Chapter 2.3.1 --- Principle of the SCS technique --- p.21 / Chapter 2.3.2 --- Control of the dielectric surface potential --- p.21 / Chapter 2.3.3 --- Dielectric layer surface potential --- p.22 / Chapter 2.3.4 --- Surface band bending --- p.23 / Chapter 2.3.5 --- Limitation of the dielectric layer thickness --- p.24 / Chapter 2.4 --- Applications of SCS on Metal-Oxide Semiconductor (MOS) --- p.24 / Chapter 2.4.1 --- Measurements of interface state density (Dit) --- p.24 / Chapter 2.4.2 --- Determination of density of fixed-oxide charges --- p.27 / Bibliography for Chapter2 --- p.28 / Chapter Chapter3 --- Instrumentation & methodology / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.30 / Chapter 3.1.1 --- General description of the Kratos AXIS - HS XPS system --- p.30 / Chapter 3.1.2 --- X-ray source --- p.32 / Chapter 3.1.3 --- AXIS - HS electron analyzer and transfer lens system --- p.35 / Chapter 3.1.4 --- Laser alignment facility --- p.38 / Chapter 3.1.5 --- In-lens (Micro XPS) aperture --- p.38 / Chapter 3.1.6 --- Iris (Lens input aperture) --- p.39 / Chapter 3.1.7 --- Magnetic immersion lenses --- p.39 / Chapter 3.1.8 --- Lateral resolutions --- p.41 / Chapter 3.1.9 --- Charge neutralizer --- p.53 / Chapter 3.1.10 --- XPS imaging capability --- p.58 / Chapter 3.1.11 --- Angle-resolved X-ray photoelectron spectroscopy (ARXPS) --- p.58 / Chapter 3.1.12 --- Ion sputtering system and depth profiling --- p.59 / Chapter 3.2 --- Methodology for surface charging --- p.59 / Chapter 3.3 --- Sample preparation --- p.61 / Bibliography for Chapter3 --- p.62 / Chapter Chapter4 --- Fixed-oxide charge Qf(z) of thermally-grown SiO2/Si(100) / Chapter 4.1 --- Introduction --- p.63 / Chapter 4.2 --- Experimental results on oxide surface potential as a function of oxide thickness --- p.64 / Chapter 4.3 --- Calculation of fixed-oxide charge distribution --- p.69 / Chapter 4.3.1 --- Gauss's law --- p.69 / Chapter 4.3.2 --- Density of fixed-oxide charge --- p.70 / Chapter 4.4 --- Applications --- p.78 / Bibliography for chapter4 --- p.80 / Chapter Chapter5 --- Observation of dielectric electrical breakdown phenomena of SiO2/Si structure by SCS / Chapter 5.1 --- Introduction to electrical breakdown analysis in device electronics --- p.81 / Chapter 5.2 --- Experimental --- p.82 / Chapter 5.3 --- Results --- p.82 / Chapter 5.3.1 --- Analysis on 1000A Sio2/Si --- p.82 / Chapter 5.3.1.1 --- Variation of C 1s under charging --- p.82 / Chapter 5.3.1.2 --- Stochastic breakdown of SiO2 --- p.84 / Chapter 5.3.2 --- Analysis on 19k SiO2/Si --- p.91 / Chapter 5.4 --- Discussion --- p.93 / Chapter 5.4.1 --- Model of stochastic breakdown of SiO2/Si --- p.93 / Chapter 5.4.2 --- Variation of Si 2p under charging --- p.95 / Chapter 5.5 --- Summary --- p.96 / Bibliography for Chapter5 --- p.99 / Chapter Chapter6 / Conclusion --- p.100

Wang Yuhao = 利用X光电子谱和导电原子力显微镜对聚3, 4-乙烯二氧噻酚 : 聚苯磺酸改性的研究 / 王宇昊. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Wang Yuhao = Li yong X guang dian zi pu he dao dian yuan zi li xian wei jing dui ju 3, 4-yi xi er yang sai fen : ju ben huang suan gai xing de yan jiu / Wang Yuhao. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xiii / Chapter CHAPTER 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Review of conducting conjugated polymers --- p.1 / Chapter 1.1.1 --- Development of conjugated polymer --- p.1 / Chapter 1.1.2 --- Basic concepts in independent-electron theories of conducting conjugated polymers --- p.2 / Chapter 1.1.2.1 --- "Huckel model and its difficulty, the importance of election-phonon" --- p.2 / Chapter 1.1.2.2 --- The SSH model and dimerization --- p.3 / Chapter 1.1.2.3 --- "Charge carriers in conducting conjugated polymers: soliton, polaron and bipolaron" --- p.5 / Chapter 1.1.3 --- "Poly(3,4-ethylenedioxythiophene) or PEDT" --- p.5 / Chapter 1.1.4 --- Derivatives of PEDT --- p.6 / Chapter 1.1.5 --- Application of PEDT and its derivatives --- p.7 / Chapter 1.2 --- Polymeric light emitting diodes (PLED) --- p.7 / Chapter 1.2.1 --- Invention Polymeric light emitting diodes (PLED) --- p.7 / Chapter 1.2.2 --- Electric structure of PLEDs --- p.7 / Chapter 1.2.3 --- Transition from excitons to photons --- p.8 / Chapter 1.2.4 --- Controlling electron and hole injection --- p.8 / Chapter 1.2.5 --- Application of PEDT-PSS as hole transporting layer in PLED --- p.9 / Chapter 1.2.6 --- "Phase separating in PEDT-PSS blend, removing the PSS rich layer" --- p.9 / Chapter 1.3 --- Motivations of the thesis work --- p.10 / References --- p.10 / Chapter CHAPTER 2 --- INSTRUMENTATION --- p.27 / Chapter 2.1 --- X-ray Photoelectron Spectroscopy --- p.27 / Chapter 2.1.1 --- History of XPS techniques --- p.27 / Chapter 2.1.2 --- Physical Basis --- p.28 / Chapter 2.1.3 --- Chemical Shift of Binding Energy in XPS --- p.29 / Chapter 2.1.4 --- Binding Energy Referencing in XPS --- p.29 / Chapter 2.1.5 --- Sampling Depth of XPS --- p.30 / Chapter 2.1.6 --- Instrumental Setup of XPS --- p.30 / Chapter 2.2 --- Scanning Probe Microscopy --- p.31 / Chapter 2.2.1 --- Introduction --- p.31 / Chapter 2.2.2 --- Atomic Force Microscopy and Conductive Atomic Force Microscopy --- p.31 / Chapter 2.2.3 --- Instrumental Setup for Conductive AFM --- p.32 / Chapter 2.3 --- The Low Energy Ion Beam (LEIB) system at CUHK --- p.32 / Chapter 2.3.1 --- Introduction --- p.32 / Chapter 2.3.2 --- Principle --- p.33 / Chapter 2.3.3 --- Instrumentation Setup --- p.33 / References --- p.33 / Chapter CHAPTER 3 --- Effects of Ar+ bombardment at 500 and 100eV --- p.42 / Chapter 3.1 --- Introduction --- p.42 / Chapter 3.2 --- Sample Preparation --- p.42 / Chapter 3.3 --- Ar+ sputtering and XPS measurement of the sputtered sample. --- p.43 / Chapter 3.4 --- Results and Discussion --- p.44 / References --- p.49 / Chapter CHAPTER 4 --- Effects of annealing on PEDT-PSS thin films studied by XPS and AFM --- p.60 / Chapter 4.1 --- Introduction --- p.60 / Chapter 4.2 --- Sample Preparation --- p.60 / Chapter 4.3 --- XPS measurements and results --- p.61 / Chapter 4.3.1 --- XPS of C 1s core level of PEDT-PSS --- p.61 / Chapter 4.3.2 --- XPS of O 1s core level of PEDT-PSS --- p.62 / Chapter 4.3.3 --- XPS of S 2p core level of PEDT-PSS --- p.62 / Chapter 4.3.4 --- XPS of Valence Band of PEDT-PSS --- p.64 / Chapter 4.4 --- C-AFM measurements and results --- p.65 / Chapter 4.4.1 --- C-AFM measurements on PEDT-PSS --- p.65 / Chapter 4.5 --- Measurements and results about film insolubility and conductivity --- p.65 / Chapter 4.5.1 --- Insolubility measurements --- p.66 / Chapter 4.5.2 --- Conductivity measurements --- p.66 / Chapter 4.5.3 --- Results from the film insolubility and conductivity measurements --- p.66 / Chapter 4.6 --- Conclusion --- p.67 / References --- p.68 / Chapter CHAPTER 5 --- Effects of low energy proton bombardment of PEDT-PSS films studied by XPS and AFM --- p.90 / Chapter 5.1 --- Introduction --- p.90 / Chapter 5.2 --- XPS and c-AFM studies of PEDT-PSS films bombarded by H+ --- p.90 / Chapter 5.2.1 --- Sample preparation --- p.90 / Chapter 5.2.2 --- Results and discussion --- p.90 / Chapter 5.3 --- Conductivity measurements --- p.92 / Chapter 5.3.1 --- Sample preparation for conductivity measurements --- p.92 / Chapter 5.3.2 --- Results and discussion --- p.93 / Chapter 5.4 --- Conclusion --- p.93 / References --- p.93 / Chapter CHAPTER 6 --- Concluding Remarks and Future Works --- p.106 / Chapter 6.1 --- Concluding Remarks --- p.106 / Chapter 6.2 --- Future Work --- p.106 / Chapter APPENDIX --- The SSH model in describing polyacetylene --- p.108 / Chapter Part 1 --- Assumptions of the SSH model --- p.108 / Chapter Part 2 --- Bloch model and SSH model. --- p.113 / Reference --- p.117

>Magister Scientiae - MSc / Solar cells offer SA an additional energy source. While Si cells are abundantly available they are not at an optimal efficiency and the cost is still high. One technology that can enhance their performance is SiNW. However, material properties such as the diameter, porosity and length determine their effectiveness during application to solar cell technology. One method of growing SiNW uses Sn catalysts on a Si substrate. As the properties of the Sn nanoparticle govern the properties of the SiNW, this thesis investigates their formation and properties by depositing a Sn layer on a Si wafer and then subjecting it to different temperatures, during process the layer forms into nanoparticles. At each temperature the morphology, composition and crystallinity will be determined using XPS, SEM, TEM and EDS. Thus, in Chapter 1 there is an overview, Chapter 2 deals with techniques used in this study, Chapter 3 will give the quantitative and qualitative results on the XPS analysis and Chapter 4 will illustrate the structural behaviour of the annealed Sn film samples.