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International Telemetering Conference Proceedings / November 04-07, 1991 / Riviera Hotel and Convention Center, Las Vegas, Nevada / The Multi-Stream Data-Driven Telemetry System (MSDDTS) is a new generation system in China developed by Beijing Research Institute of Telemetry (BRIT) for high bit rate, multi-stream data acquisition, processing and display. Features of the MSDDTS include: .Up to 4 data streams; .Data driven architecture; .Multi-processor for parallel processing; .Modular, Configurable, expandable and programmable; .Stand-along capability; .And, external control by host computer. This paper addresses three very important aspects of the MSDDTS. First, the system architecture is discussed. Second, three basic models of the system configuration are described. The third shows the future development of the system.

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Designing a modern processor is a very complex task. Writing the entire design using a hardware description language (like Verilog) is time consuming and difficult to verify. There exists a split architecture/microarchitecture description technique, in which, the description of any hardware can be divided into two orthogonal descriptions: (a) an architectural contract between the user and the implementation, and (b) a microarchitecture which describes the implementation of the architecture. The main aim of this thesis is to build realistic processors using this technique. We have designed an in-order and an out-of-order superscalar processor using the split-description compiler. The backend of this compiler is another contribution of this thesis. / text

The continuing requirement for computational processing power, multi-functional devices and component miniaturization have emphasised the need for thermal management systems able to maintain the temperature at safe operating condition. The thermal management industry is constantly seeking for new cutting edge, efficient, cost effective heat transfer enhancement technologies. The aim of this study is to utilize the electron beam treatment for the improvement of the heat transfer area in liquid cooled plates and experimentally evaluate the performance. Considering the complexity of the technology, this thesis focuses on the design and production of electron beam enhanced test samples, construction of the test facility, testing procedure and evaluation of thermal and hydraulic characteristics. In particular, the current research presented in this thesis contains a number of challenging and cutting edge technological developments that include: (1) an overview of the semiconductor industry, cooling requirements, the market of thermal management systems, (2) an integral literature review of pin-fin enhancement technology, (3) design and fabrication of the electron beam enhanced test samples, (4) upgrade and construction of the experimental test rig and the development of the test procedure, (5) reduction of the experimental data and analysis to evaluate thermal and hydraulic performance. The experimental results show that the capability of the electron beam treatment to improve the thermal efficiency of current untreated liquid cooled plates is approximately three times. The highest heat transfer rate was observed for the sample S3; this is attributed to the irregularities of the enhanced structure, which improves the heat transfer area, mixing, and disturbs the thermal and velocity boundary layers. Enhancement of heat transfer for all three samples was characterised by an increase of pressure drop. The electron beam enhancement technique is a rapid process with zero material waste and cost effective. It allows thermal management systems to be produced smaller and faster, reduce material usage, without compromising safety, labour cost or the environment.

This thesis presents new simulation techniques designed to speed up the simulation of microprocessor systems. The advanced simulation techniques may be applied to the simulator class which employs dynamic binary translation as its underlying technology. This research supports the hypothesis that faster simulation speeds can be realized by translating larger sections of the target program at runtime. The primary motivation for this research was to help facilitate comprehensive design-space exploration and hardware/software co-design of novel processor architectures by reducing the time required to run simulations. Instruction set simulators are used to design and to verify new system architectures, and to develop software in parallel with hardware. However, compromises must often be made when performing these tasks due to time constraints. This is particularly true in the embedded systems domain where there is a short time-to-market. The processing demands placed on simulation platforms are exacerbated further by the need to simulate the increasingly complex, multi-core processors of tomorrow. High speed simulators are therefore essential to reducing the time required to design and test advanced microprocessors, enabling new systems to be released ahead of the competition. Dynamic binary translation based simulators typically translate small sections of the target program at runtime. This research considers the translation of larger units of code in order to increase simulation speed. The new simulation techniques identify large sections of program code suitable for translation after analyzing a profile of the target program’s execution path built-up during simulation. The average instruction level simulation speed for the EEMBC benchmark suite is shown to be at least 63% faster for the new simulation techniques than for basic block dynamic binary translation based simulation and 14.8 times faster than interpretive simulation. The average cycle-approximate simulation speed is shown to be at least 32% faster for the new simulation techniques than for basic block dynamic binary translation based simulation and 8.37 times faster than cycle-accurate interpretive simulation.

Heterogeneous processors intended for mobile devices are composed of a number of different CPU cores that enable the processor to optimize performance under strict power limits that vary over time. Design space exploration techniques can be used to discover a candidate set of potential cores that could be implemented on a heterogeneous processor. However, candidate sets contain far more cores than can feasibly be implemented. Heterogeneous processor composition therefore requires solutions to the selection problem and the evaluation problem. Cores must be selected from the candidate set, and these cores must be shown to be quantitatively superior to alternative selections. The qualitative criterion for a selection of cores is diversity. A diverse set of heterogeneous cores allows a processor to execute tasks with varying dynamic behaviors at a range of power and performance levels that are appropriate for conditions during runtime. This thesis presents a detailed description of the selection and evaluation problems, and establishes a theoretical framework for reasoning about the runtime behavior of power-limited, heterogeneous processors. The evaluation problem is specifically concerned with evaluating the collective attributes of selections of cores rather than evaluating the features of individual cores. A suite of metrics is defined to address the evaluation problem. The metrics quantify considerations that could otherwise only be evaluated subjectively. The selection problem is addressed with an iterative, diversity-preserving algorithm that emphasizes the flexibility available to programs at runtime. The algorithm includes facilities for guiding the selection process with information from an expert, when available. Three variations on the selection algorithm are defined. A thorough analysis of the proposed selection algorithm is presented using data from a large-scale simulation involving 33 benchmarks and 3000 core types. The three variations of the algorithm are compared to each other and to current, state-of-the-art selection techniques. The analysis serves as both an evaluation of the proposed algorithm as well as a case study of the metrics.

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Le secteur Semi-conducteurs avec l'avènement de fabrication submicroniques coule dessous de 45 nm ont commencé à relever de nouveaux défis pour continuer à évoluer en fonction de la loi de Moore. En ce qui concerne l'adoption généralisée de systèmes embarqués une contrainte majeure est devenu la consommation d'énergie de l'IC. En outre, les technologies de mémoire comme le standard actuel de la technologie de mémoire intégré pour la hiérarchie de la mémoire, la mémoire SRAM, ou le flash pour le stockage non-volatile ont des contraintes complexes extrêmes pour être en mesure de produire des matrices de mémoire aux nœuds technologiques 45 nm ci-dessous. Un important est jusqu'à présent mémoire non volatile n'a pas été adopté dans la hiérarchie mémoire, en raison de sa densité et comme le flash sur la nécessité d'un fonctionnement multi-tension.Ces thèses ont fait, par le travail dans l'objectif de ces contraintes et de fournir quelques réponses. Dans la thèse sera présenté méthodes et les résultats extraits de ces méthodes pour corroborer notre objectif de définir une feuille de route à adopter une nouvelle technologie de mémoire non volatile, de faible puissance, à faible fuite, SEU / MEU-résistant, évolutive et avec similaire le rendement en courant de la SRAM, physiquement équivalente à SRAM, ou encore mieux, avec une densité de surface de 4 à 8 fois la surface d'une cellule SRAM, sans qu'il soit nécessaire de domaine multi-tension comme FLASH. Cette mémoire est la MRAM (mémoire magnétique), selon l'ITRS avec un candidat pour remplacer SRAM dans un proche avenir. MRAM au lieu de stocker une charge, ils stockent l'orientation magnétique fournie par l'orientation de rotation-couple de l'alliage sans la couche dans la MTJ (Magnetic Tunnel Junction). Spin est un état quantical de la matière, que dans certains matériaux métalliques peuvent avoir une orientation ou son couple tension à appliquer un courant polarisé dans le sens de l'orientation du champ souhaitée.Une fois que l'orientation du champ magnétique est réglée, en utilisant un amplificateur de lecture, et un flux de courant à travers la MTJ, l'élément de cellule de mémoire de MRAM, il est possible de mesurer l'orientation compte tenu de la variation de résistance, plus la résistance plus faible au passage de courant, le sens permettra d'identifier un zéro logique, diminuer la résistance de la SA détecte une seule logique. Donc, l'information n'est pas une charge stockée, il s'agit plutôt d'une orientation du champ magnétique, raison pour laquelle il n'est pas affecté par SEU ou MEU due à des particules de haute énergie. En outre, il n'est pas dû à des variations de tensions de modifier le contenu de la cellule de mémoire, le piégeage charges dans une grille flottante.En ce qui concerne la MRAM, cette thèse a par adresse objective sur les aspects suivants: MRAM appliqué à la hiérarchie de la mémoire:- En décrivant l'état actuel de la technique dans la conception et l'utilisation MRAM dans la hiérarchie de mémoire;- En donnant un aperçu d'un mécanisme pour atténuer la latence d'écriture dans MRAM au niveau du cache (Principe de banque de mémoire composite);- En analysant les caractéristiques de puissance d'un système basé sur la MRAM sur Cache L1 et L2, en utilisant un débit d'évaluation dédié- En proposant une méthodologie pour déduire une consommation d'énergie du système et des performances.- Et pour la dernière base dans les banques de mémoire analysant une banque mémoire Composite, une description simple sur la façon de générer une banque de mémoire, avec quelques compromis au pouvoir, mais la latence équivalente à la SRAM, qui maintient des performances similaires. / The Semiconductors Industry with the advent of submicronic manufacturing flows below 45 nm began to face new challenges to keep evolving according with the Moore's Law. Regarding the widespread adoption of embedded systems one major constraint became power consumption of IC. Also, memory technologies like the current standard of integrated memory technology for memory hierarchy, the SRAM, or the FLASH for non-volatile storage have extreme intricate constraints to be able to yield memory arrays at technological nodes below 45nm. One important is up until now Non-Volatile Memory weren't adopted into the memory hierarchy, due to its density and like flash the necessity of multi-voltage operation. These theses has by objective work into these constraints and provide some answers. Into the thesis will be presented methods and results extracted from this methods to corroborate our goal of delineate a roadmap to adopt a new memory technology, non-volatile, low-power, low-leakage, SEU/MEU-resistant, scalable and with similar performance as the current SRAM, physically equivalent to SRAM, or even better with a area density between 4 to 8 times the area of a SRAM cell, without the necessity of multi-voltage domain like FLASH. This memory is the MRAM (Magnetic Memory), according with the ITRS one candidate to replace SRAM in the near future. MRAM instead of storing charge, they store the magnetic orientation provided by the spin-torque orientation of the free-layer alloy in the MTJ (Magnetic Tunnel Junction). Spin is a quantical state of matter, that in some metallic materials can have it orientation or its torque switched applying a polarized current in the sense of the field orientation desired. Once the magnetic field orientation is set, using a sense amplifier, and a current flow through the MTJ, the memory cell element of MRAM, it is possible to measure the orientation given the resistance variation, higher the resistance lower the passing current, the sense will identify a logic zero, lower the resistance the SA will sense a one logic. So the information is not a charge stored, instead it is a magnetic field orientation, reason why it is not affected by SEU or MEU caused due to high energy particles. Also it is not due to voltages variations to change the memory cell content, trapping charges in a floating gate. Regarding the MRAM, this thesis has by objective address the following aspects: MRAM applied to memory Hierarchy: - By describing the current state of the art in MRAM design and use into memory hierarchy; - by providing an overview of a mechanism to mitigate the latency of writing into MRAM at the cache level (Principle to composite memory bank); - By analyzing power characteristics of a system based on MRAM on CACHE L1 and L2, using a dedicated evaluation flow- by proposing a methodology to infer a system power consumption, and performances.- and for last based into the memory banks analysing a Composite Memory Bank, a simple description on how to generate a memory bank, with some compromise in power, but equivalent latency to the SRAM, that keeps similar performance.