There are three parts in this thesis: In the first part (Chapter 2), we discuss the port excitation (Wave port vs Lumped port) suitable for sub-millimeter wave operations. We realized on printed circuit board a grounded coplanar waveguide (CPWG) and on gallium arsenic (GaAs) a microstrip line. We performed simulation on these structures using high frequency structure simulator (HFSS), and compared the results with measured ones. From the comparison, we found close match for CPWG insertion loss from 10 MHz to 67 GHz using the Wave port. However, for G-S-G lumped port, only matched up to 40 GHz. The wave port not only was more accurate, but also consumed less time in simulation. Consequently, we employed wave port as our simulation excitation for our sub-millimeter wave QFN design. In the second part (Chapter 3), we focused on design of low cost QFN for sub-millimeter wave applications. We fabricated test structures, which include IC pads and transmission lines, wire bonds, QFN leads, and G-S-G structures on printed circuit board. In HFSS simulation, our specially designed ribbon bonds and QFN configuration show return loss less than -20dB and insertion loss less than -0.4 dB up to 60 GHz. Using the same design principles, we strived to improve the performance of a commercially available QFN, which normally operates at 3 to 6 GHz. The extraction method to obtain the high frequency characteristics was introduced first, and the characteristics of a commercially available QFN (with our wire bond configuration) were then obtained. The insertion loss was less than -20 dB and insertion loss less than -0.5 dB up to 20 GHz. In Chapter 5, we discuss the performance discrepancies between the simulated ribbon bond results and that for fabricated wire bonds. In the third part (Chapter 4), we introduced a method to extract the characteristics of a single backside via and investigated the effects of die attachment on the performance of a single and multiple backside via(s). Using silver epoxy and Cu blank layer as die attach methods, we found it was important to provide a broad path (Cu blank layer), as opposed to a restrict path (like silver epoxy) to reduce the inductance of the backside vias. The conclusion and future work are provided in Chapter 5.

Currently the trend of electronic product development is to ward ¡§light and thin, multi-functional, high density and durability¡¨. When the microelectronic chips tend to be high power, high density and high speed, the rapid increase of heat in a reduced unit area of package size, will lead to failure of electronic products. The contents of thesis is to find out the dominant factors in heat transfer by changing the geometries and material properties of QFN and BGA packages. It also aims to achieve the beat the thermal performance by reducing the probability of failure. In industries it needs a lot of cost and time in experiment work due to the changes of size and materials. Herein, the softwares of ANSYS and ICEPAK are adopted to model the QFN and BGA packages with the statistical experimental design of Taguchi method L18 (21¡Ñ37) orthogonal array setting parameters and obtain the degree of effect for each factor. Eventually, we use the analysis of variance ANOVA to obtain the contribution of each factor and to identify the significant degree for various parameters by variance error integration. From the results the die attach thermal conductivity affects the contribution of thermal performance up to 81.46% for QFN package in comparison with other controlling factors of high significance and high impact effects. Die attach thermal conductivity between 0.5 W/m•k and 1.5 W/m•k the Tj declines much larger than that between 1.5 W/m•k and 8 W/m•k. Die /PKG area ratio affects the contribution of the thermal performance to 64.24% and increasing Die /PKG area ratio can reduce the Tj for BGA package. The significant effect is also higher than other factors. However, the contribution of substrate layers is 18.83% at 99% confidence level.

The Master thesis deals with technology of mounting QFN packages on to the printed circuits boards. Describes also influence of shape and size of soldering pads and the amount of soldering paste with respect to the quality and the reliability. In first part overview of existing packages is summarised. Second part describes design of testing board and the factors which leads to eliminating errors during manufacturing process.

This master´s thesis deals with QFN packages soldering and technology procedures optimization. The aim of theoretical part is description of QFN packages, their assembly and reflow soldering on PCB in HONEYWELL. The aim of the practical part is to propose a method of measuring temperature and optimizing the thermal profiles of selected PCB with QFN packages by using convection (HONEYWELL) and infrared (BUT) reflow ovens. Comparison and evaluation of thermal profiles for 3 production PCBś with QFN packages using solder paste AIM NC257-2 were realised. The main part of master´s thesis are appearance evaluation of solder joints, preparing microsection and measuring intermetallic layers thickness by using the optical and the scanning electron microscopes, analysation and study of QFN defects created during soldering proces. These tests were performed with 2 production PCB´s. Optimization of SPI and soldering technology procedures where were analyzed QFN packages were processed on one type of PCB. Interesting part of this diplomma thesis is creating of the 3D heat transfer model of QFN package during the reflow soldering in SolidWorks.

Ce travail répond à un besoin industriel accru en termes d’amplification des signaux sur porteuses à enveloppes variables utilisés par les systèmes de télécommunications actuels. Ces signaux disposent d’un fort PAPR et d’une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. La raison pour laquelle les industriels télécoms requièrent alors des amplificateurs de très fortes puissances de sortie, robustes, fiables et ayant une dépense énergétique optimale le long de la dynamique d’enveloppe associée à un niveau de linéarité acceptable. Ce document expose les résultats d’étude et de réalisation de deux Amplificateurs de Puissance Doherty (APD) à haut rendement encapsulés en boîtiers plastiques QFN. Le premier est un amplificateur Doherty symétrique classique (APD-SE) et le second est un amplificateur à deux entrées RF (APD-DE). Ces démonstrateurs fonctionnant en bande C sont fondés sur l’utilisation de la technologie Quasi-MMIC associant des barrettes de puissance à base des transistors HEMTs AlGaN/GaN sur SiC à des circuits d’adaptation en technologie ULRC. L’approche Quasi-MMIC associée à la solution d’encapsulation plastique QFN permettant une meilleure gestion des comportements thermiques offre des performances électriques similaires à celles de la technologie MMIC avec des coûts et des cycles de fabrication très attractifs. Durant ces travaux, une nouvelle méthode d’évaluation des transistors dédiés à la conception d’amplificateurs Doherty a été développée et mise en oeuvre. L’utilisation intensive des simulations électromagnétiques 2.5D et 3D a permis de bien prendre en compte les effets de couplages entre les différents circuits dans l’environnement du boîtier QFN. Les résultats des tests des amplificateurs réalisés fonctionnant sur une bande de 1GHz ont permis de valider la méthode de conception et ont montré que les concepts avancés associés à l’approche Quasi-MMIC ainsi qu’à des technologies d’encapsulation plastique, peuvent générer des fonctions micro-ondes innovantes. Les caractérisations de l’APD-DE ont relevé l’intérêt inhérent à la préformation des signaux d’excitation et des points de polarisation de chaque étage de l’amplificateur. / This work responds to an increased industrial need for on carrier signals with variable envelope amplification used by current telecommunications systems. These signals have a strong PAPR and an envelope statistical distribution centred below the envelope peak value, the reason why the telecom industrialists then require a robust and reliable high power amplifiers having an energy expenditure along of the envelope dynamics associated with an acceptable level of linearity. This document presents the results of the study and realization of two, high efficiency, Doherty Power Amplifiers (DPA) encapsulated in QFN plastic packages. The first is a conventional Doherty power Amplifier (DPA-SE) and the second is a dual-input Doherty power amplifier (DPA-DE). These C-band demonstrators are based on the use of Quasi-MMIC technology combining power bars based on the AlGaN/GaN transistors on SiC to matching circuits in ULRC technology. The Quasi-MMIC approach combined with Quasi-MMIC approach combined with QFN plastic package solution for better thermal behaviour management offers electrical performances similar to those of MMIC technology with very attractive coasts and manufacturing cycles. During this work, a new evaluation method for the transistors dedicated to the design of DPA was developed and implemented. The intensive use of 2.5D and 3D electromagnetic simulations made it possible to take into account the coupling effects existing between the different circuits in the QFN package environment. The results of the tests of the amplifiers realised and operating on 1GHz bandwidth validated the design method and showed that the advanced concepts associated with the Quasi-MMIC approach as well as plastic encapsulation technologies can generate innovative microwave functions. The characterizations of the DPA-DE have noted the interest inherent in the preformation of the excitation signals and the bias points of each stage of the amplifier.

This diplomas thesis deals with specific technologies and manufacture of BGA and QFN packages. Also summarizes the most used test methods for assessing the reliability for. Describes the making of equipment for soldering in a nitrogen atmosphere, followed by comparison solder joints of BGA and QFN forming in different atmosphere. Finally, summarizes knowledge about the process of soldering and desoldering lead-free solders for BGA packages, followed by experimental evaluation of the causes of malfunction of repaired samples.