Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.

[pt] Nesta tese, apresento uma investigação teórica e experimental das propriedades eletro-ópticas de um fotodetector baseado em uma superrede assimétrica InGaAs/InAlAs com um defeito estrutural. Essa heteroestrutura apresenta duas importantes características: estados parcialmente localizados no contínuo, chamados de estados eletrônicos vazantes, e um aumento virtual do band offset na banda de condução. Devido à assimetria da superrede, a função de onda do estado eletrônico vazante é localizada numa direção e estendida na outra. Em consequência dessas características, o fotodetector apresenta modo dual de operação, fotocondutivo e fotovoltaico, e temperatura de operação ambiente. O modo fotovoltaico foi alcançado devido à direção preferencial de escape do fluxo de elétrons excitados para os estados eletrônicos vazantes no contínuo. A temperatura de operação elevada ocorre devido à diminuição da corrente de escuro térmica causada pelo aumento virtual do band offset. No modo fotovoltaico, o espectro de fotocorrente apresenta dois picos estreitos de energias em 300 meV e em torno 440 meV, sendo eles relacionados às transições ópticas do estado fundamental para o primeiro e o segundo estado vazante no contínuo, respectivamente. Para o modo fotocondutivo, a largura de linha do espectro de fotocorrente é fortemente dependente da direção do bias de voltagem aplicado. Para o bias positivo, o espectro de fotocorrente apresenta um pico em 300 meV e um ombro de energia em torno de 260 meV. Para o bias negativo, o espectro de fotocorrente mostra uma banda larga com dois picos em 300 meV e 260 meV. Esse comportamento está relacionado com a população dos estados na minibanda em função da direção do bias aplicado. As figuras de mérito do fotodetector, em ambos os modos de operação, apresentam resultados similares aos melhores fotodetectores encontrados na literatura. / [en] In this thesis, I present a theoretical and experimental investigation of the electro-optical properties of a photodetector based on an InGaAs/InAlAs asymmetric superlattice with a structural defect. This heterostructure has two important characteristics: partially localized states in the continuum, called by leaky electronic states, and a virtual increase in conduction band offset. Due to the asymmetry of the superlattice, the wavefunction of the leaky electronic state is located in one direction and extended in another one. As a result of these features, the photodetector presents a dual-mode operation, photoconductive and photovoltaic modes, and room temperature operating. The photovoltaic mode has reached due to the preferential direction for the flow of excited electrons in the leaky electronic state in the continuum. The high operating temperature occurs because of the decrease in thermal dark current due to the virtual increase of band offset. In photovoltaic mode, the photocurrent spectrum has two narrow energy peaks at 300 meV and around 440 meV, which are related to optical transitions from the ground state to the first and the second leaky electronic states, respectively. For photoconductive mode, the line width of the photocurrent spectrum is strongly dependent on the direction of the applied voltage bias. For the positive bias, the photocurrent spectrum has a peak at 300 meV and a power shoulder around 260 meV. For the negative bias, the photocurrent spectrum shows broadband with two peaks at 300 meV and 260 meV. This behavior is related to the population of the mini band states as a function of the applied bias direction. The figure of merits of the photodetector, in both operation modes, present results similar to the best photodetectors found in the literature.

Il existe au niveau d’interfaces séparant des milieux de constantes diélectriques de signes opposés des ondes électromagnétiques confinées à proximité de ces interfaces. On parle d’ondes de surface. C’est notamment le cas des métaux et des cristaux polaires : on parle alors de plasmons-polaritons de surface et de phonons-polaritons de surface respectivement. L’objectif de cette thèse est de revisiter certains aspects théoriques associés à ces ondes de surface.Dans un premier temps, en nous basant sur le formalisme de Green, nous donnons un moyen d’obtenir une expression du champ des ondes de surface sous forme de somme de modes. En présence de pertes, ces ondes ont nécessairement un vecteur d’onde ou une pulsation complexe. Nous donnons ainsi deux expressions de leur champ, correspondant à chacun de ces deux cas, et discutons de l’opportunité d’utiliser l’une ou l’autre de ces expressions.Nous posons par la suite les bases d’une optique de Fourier et d’une optique géométrique des ondes de surface. Nous montrons comment obtenir une équation de Helmholtz à deux dimensions pour les ondes de surface, un principe d’Huygens-Fresnel pour les ondes de surface, ainsi qu’une équation eikonale pour les ondes de surface, qui s’applique sous certaines hypothèses. Nous nous intéressons également à la superlentille proposée par Pendry, qui s’appuie sur les ondes de surface. Nous étudions notamment le fonctionnement de cette superlentille en régime impulsionnel, et montrons qu’en présence de pertes, il est possible d’obtenir une meilleure résolution avec certaines formes d’impulsion par rapport au régime harmonique, au prix d’une importante baisse de signal toutefois.Nous développons ensuite un traitement quantique des ondes de surface. Nous calculons au préalable une expression de leur énergie, et nous donnons une expression de leur hamiltonien et de leurs opérateurs champ. Sans pertes, nous montrons que le facteur de Purcell prédit par notre théorie quantique est rigoureusement égal au facteur de Purcell calculé avec des outils classiques. Nous comparons ensuite ce facteur de Purcell à celui calculé classiquement avec pertes, et montrons sur un exemple que les pertes peuvent être négligées dans de nombreux cas. Nous donnons enfin une expression des coefficients d’Einstein associés aux ondes de surface permettant d’étudier la dynamique de l’inversion de population d’un milieu fournissant un gain aux ondes de surface. Nous appliquons par la suite ce formalisme quantique à l’interaction électrons-phonons-polaritons de surface dans les puits quantiques, notamment leur interaction avec un mode de phonon du puits particulièrement confiné grâce à un effet de constante diélectrique proche de zéro (epsilon near zero, ENZ). / Interfaces between materials having opposite dielectric constants support electromagnetic waves confined close to these interfaces called surface waves. For metals and polar crystals, they are respectively called surface plasmon-polaritons and surface phonon-polaritons. The goal of this thesis is to revisit some theoretical aspects associated to these surface waves.Using the Green formalism, we derive an expression of the surface wave field as a sum of modes. With losses, these waves must have a complex wave vector or frequency. Thus we give two expressions of their field, for each of these cases, and discuss when each of these expressions should be used.We then give the basis of a surface wave Fourier optics and geometrical optics. We derive a 2D Helmholtz equation for surface waves, a Huygens-Fresnel principle for surface waves, and an eikonal equation for surface waves. We then take a look at Pendry’s superlens, in which surface waves play a major role. We study the behavior of the superlens in pulsed mode taking losses into account, and show that its resolution can be increased for some pulse shapes compared to the steady state, at the expense of a signal decay.We then develop a quantum treatment of surface waves. We first calculate their energy, and then give an expression of their hamiltonian and field operators. Without losses, we show that the Purcell factor given by our quantum theory is perfectly equal to the Purcell factor given by the classical theory. We then compare this Purcell factor to the lossy case on an example, and show that losses can often be neglected. We then derive the Einstein coefficients associated to surface wave emission and absorption, which allow studying the population inversion dynamics of a gain medium. We then use this quantum formalism to study the interaction between electrons and surface phonon-polaritons in quantum wells, particularly their interaction with a phonon mode which features high confinement thanks to an epsilon near zero (ENZ) effect.

Em sistemas com acoplamento spin-órbita (SO) é possível manipular eletricamente o spin do elétron via a aplicação de um campo elétrico.1 Isso permite a potencial aplicação do grau de liberdade de spin (Spintronica) no desenvolvimento de novos dispositivos e tecnologias, como por exemplo na tecnologia da informação (computação quântica).2,3 No entanto, sabe-se que a interação SO causa efeitos indesejáveis, como por exemplo a relaxação e o defasamento de spin.4 Dessa maneira, do ponto de vista de aplicações, torna-se desejável maximizar o tempo de vida do spin. Neste trabalho, investigamos a relaxação de spin dos elétrons de condução em poços quânticos com duas sub-bandas5 crescidos ao longo das direções [001] e [110] via o mecanismo de D\'yakonov-Perel\'.6 Combinando teoria de grupos, o método k.p, a aproximação da função envelope e teoria de perturbação de Löwdin obtemos um Hamiltoniano efetivo para os elétrons da banda de condução na presença das interações SO de Rashba e Dresselhaus. Aqui, diferentemente de alguns trabalhos anteriores,7,8 além de incluir o termo cúbico de Dresselhaus, também levamos em conta as contribuições devido à influência da segunda sub-banda de mais baixa energia do poço. A partir deste Hamiltoniano derivamos expressões para os tempos de relaxação do spin e analisamos como estas novas contribuições (termos do acoplamento com a segunda sub-banda) afetam os tempos de vida dos spins. Comparamos os tempos de relaxação para as direções [001] com os calculados para a direção [110]. Nossos resultados mostram que as contribuições devido à segunda sub-banda são desprezíveis para ambas as direções. Mostramos também que o tempo de relaxação para a direção [110] é mais longo que o da [001], resultado consistente com experimentos9,10 e outros trabalhos teóricos anteriores.7 / In systems with spin-orbit (SO) coupling, it is possible to electrically manipulate the electron spin via applied gate voltages.1 This allows for the potential use of the spin degree of freedom (Spintronics) in the development of new devices and technologies, for instance information technology (quantum computing).2,3 It is known however, that the SO interaction leads to the undesired effect of causing spin relaxation and spin dephasing.4 Thus from the point of view of applications, it is desirable to maximize the spin lifetimes. Here, we investigate the spin relaxation of the conduction electrons in quantum wells with two sub-bands5 grown along the [001] and [110] directions via the D\'yakonov-Perel\' mechanism.6 By combining group theory, the k.p method, the envelope function approach and the Löwdin perturbation theory, we obtain an effective Hamiltonian for the conduction electrons in the presence of the Rashba and Dresselhaus SO interactions. Differently from some early works,7,8 in addition to the cubic Dresselhaus term, we also account for the contributions arising from the second lowest sub-band of the well. We derive expressions for the spin relaxation times and analyze how the new contributions (second sub-band terms) affect the spin lifetimes. We compare the relaxation times obtained in the [001] direction with those calculated for the [110] direction. Our results show that the contributions from the second sub-band are negligible for both directions. We also find that the relaxation time in the [110] direction is longer than the one in the [001], a result consistent with experiments9,10 and earlier theoretical works.7

Em sistemas com acoplamento spin-órbita (SO) é possível manipular eletricamente o spin do elétron via a aplicação de um campo elétrico.1 Isso permite a potencial aplicação do grau de liberdade de spin (Spintronica) no desenvolvimento de novos dispositivos e tecnologias, como por exemplo na tecnologia da informação (computação quântica).2,3 No entanto, sabe-se que a interação SO causa efeitos indesejáveis, como por exemplo a relaxação e o defasamento de spin.4 Dessa maneira, do ponto de vista de aplicações, torna-se desejável maximizar o tempo de vida do spin. Neste trabalho, investigamos a relaxação de spin dos elétrons de condução em poços quânticos com duas sub-bandas5 crescidos ao longo das direções [001] e [110] via o mecanismo de D\'yakonov-Perel\'.6 Combinando teoria de grupos, o método k.p, a aproximação da função envelope e teoria de perturbação de Löwdin obtemos um Hamiltoniano efetivo para os elétrons da banda de condução na presença das interações SO de Rashba e Dresselhaus. Aqui, diferentemente de alguns trabalhos anteriores,7,8 além de incluir o termo cúbico de Dresselhaus, também levamos em conta as contribuições devido à influência da segunda sub-banda de mais baixa energia do poço. A partir deste Hamiltoniano derivamos expressões para os tempos de relaxação do spin e analisamos como estas novas contribuições (termos do acoplamento com a segunda sub-banda) afetam os tempos de vida dos spins. Comparamos os tempos de relaxação para as direções [001] com os calculados para a direção [110]. Nossos resultados mostram que as contribuições devido à segunda sub-banda são desprezíveis para ambas as direções. Mostramos também que o tempo de relaxação para a direção [110] é mais longo que o da [001], resultado consistente com experimentos9,10 e outros trabalhos teóricos anteriores.7 / In systems with spin-orbit (SO) coupling, it is possible to electrically manipulate the electron spin via applied gate voltages.1 This allows for the potential use of the spin degree of freedom (Spintronics) in the development of new devices and technologies, for instance information technology (quantum computing).2,3 It is known however, that the SO interaction leads to the undesired effect of causing spin relaxation and spin dephasing.4 Thus from the point of view of applications, it is desirable to maximize the spin lifetimes. Here, we investigate the spin relaxation of the conduction electrons in quantum wells with two sub-bands5 grown along the [001] and [110] directions via the D\'yakonov-Perel\' mechanism.6 By combining group theory, the k.p method, the envelope function approach and the Löwdin perturbation theory, we obtain an effective Hamiltonian for the conduction electrons in the presence of the Rashba and Dresselhaus SO interactions. Differently from some early works,7,8 in addition to the cubic Dresselhaus term, we also account for the contributions arising from the second lowest sub-band of the well. We derive expressions for the spin relaxation times and analyze how the new contributions (second sub-band terms) affect the spin lifetimes. We compare the relaxation times obtained in the [001] direction with those calculated for the [110] direction. Our results show that the contributions from the second sub-band are negligible for both directions. We also find that the relaxation time in the [110] direction is longer than the one in the [001], a result consistent with experiments9,10 and earlier theoretical works.7

Durante as últimas três décadas, a epitaxia por feixe molecular se estabeleceu como uma técnica excelente para o crescimento de camadas semicondutoras de alta qualidade, tanto para a construção de dispositivos quanto para a pesquisa básica. No entanto ainda não existe um método universalmente aceito para obter-se camadas dopadas do tipo p nesta técnica de crescimento. Neste trabalho, estudamos, otimizamos e comparamos três diferentes métodos para a dopagem de camadas de GaAs do tipo p. Dois desses métodos exploraram o caráter anfotérico do silício em substratos de GaAs(311)A (através da mudança das condições de crescimento) e GaAs(100) (aplicando uma nova técnica chamada epitaxia assistida por gotas (droplets) de gálio). O terceiro método foi baseado no uso do carbono, cujas propriedades como dopante do tipo p são bem conhecidas em outras técnicas de crescimento epitaxial, mas pouco estudadas na epitaxia por feixe molecular. Para verificar a qualidade das camadas dopadas obtidas, crescemos estruturas como poços quânticos parabólicos com alta mobilidade de buracos e dispositivos optoeletrônicos como diodos emissores de luz e laseres. / During the last three decades, molecular-beam epitaxy has emerged as an excellent technique for the growth of high-quality semiconductor layers both for device construction and for basic research. In spite of this fact, there is still a lack of a universally accepted method to obtain p-type doped layers by this growth technique. In this work, we studied, optimized and compared three different methods to get p-type GaAs layers. Two of these methods exploited the amphoteric behavior of silicon atoms both on GaAs(311)A (by changing the growth conditions) and on GaAs(100) (by employing a new growth mode called droplet-assisted epitaxy) substrates. The third method was based on the use of carbon, whose properties as a p-type dopant in GaAs layers are well known in other epitaxial techniques but scarcely investigated in molecular-beam epitaxy. In order to check the quality of the doped layers, we grew structures like high hole-mobility parabolic quantum wells and optoelectronic devices like light-emitting diodes and lasers.

In der vorliegenden Promotionsarbeit werden optische Eigenschaften von Halbleiterquantengräben untersucht, die mit der Ausbildung von Speckle-Mustern in der exzitonischen Emission zusammenhängen. Die in nichtspekulärer Richtung nach resonanter Anregung von Exzitonen ausgestrahlte Emission enthält Informationen über Unordnung und Streuprozesse in der Probe. Im Kapitel "Spektrale Speckle-Analyse" wird gezeigt, dass Speckles zur Bestimmung des koährenten Anteils verwendet werden können. Außerdem kann die innerhalb des inhomogen verbreiterten Ensembles frequenzaufgelöste Lebensdauer der Exzitonen bestimmt werden. Eine mikroskopische Dichtematrixtheorie wird entwickelt und numerisch gelöst. Es wird eine gute Übereinstimmung mit den gemessenen Daten für unterschiedliche Quantengraben-Dicken und Temperaturen gefunden. Im Kapitel "Schrägliegende Speckles" werden Quantengräben mit mechanischer Verzerrung betrachtet. Die Verzerrung führt zu einer ort-abhängigen Änderung der Emissionsenergie in der Ebene des Quantengrabens und das richtungs- und zeitaufgelöste Specklemuster erfährt eine Drehung. Die theoretische Beschreibung des Rayleigh-Spektrums erlaubt es, diese Drehung mit dem lokalen Wert des Gradienten der Exzitonenergie in Beziehung zu setzen. Numerische Simulationen zeigen allerdings, dass dieser Effekt nicht durch eine Bewegung der Exzitonen entlang des Verzerrungs-Gradienten verursacht wird. Im Kapitel "Nicht-Markovsche Exziton-Phonon Dynamik" die Dichtematrixtheorie, wird jenseits der Markovschen Näherung für die Streuung von Exzitonen an akustischen Phononen numerisch gelöst. Das Absorptionsspektrum besteht aus Lorentz-formige Peaks und breiteren Seitenbändern, die aus der nicht-Markovschen Kopplung stammen. Diese Eigenschaften sind vor allem für die stark lokalisierten Zustände auf der Niederenergie-Seite des Spektrums wichtig, und erlauben eine bessere Deutung von Nahfeld-Experimenten. / In this work, optical properties of semiconductor quantum wells (QW) are investigated, which are relevant for the irregular light pattern (speckle pattern) emitted in nonspecular directions by QW after resonant excitation of the exciton states. This emission contains information on disorder and scattering processes in the sample. In Chapter "Spectral Speckle Analysis", it is shown that Speckles can be used for extraction of the coherent part of the emission, the Resonant Rayleigh Scattering. Furthermore, the frequency resolved lifetime of excitons within an inhomogeneously broadened ensemble can be established. A microscopic density matrix theory for excitons interacting with acoustic phonons is developed and numerically solved. Good agreement with the experimental results for different QW sizes and temperatures is found. In Chapter "Sloped Speckles" QW with mechanical strain are considered. The strain leads to a spatially dependent modification of the emission energy and to a tilting of the direction- and time-resolved speckle pattern. The theoretical description of the RRS relates this tilting to the local value of the spatial gradient of the exciton energy. However, numerical simulations make clear that this effect is not due to exciton motion along the strain gradient. In Chapter "Non-Markovian exciton-phonon dynamics" the density matrix theory is numerically solved beyond the Markov approximation for the interaction between excitons and acoustical phonons. The resulting absorption spectrum consists of Lorentzian peaks on top of broader sidebands originating from the non-Markovian coupling. These features are mostly important for the strongly localized states in the low energy side of the spectrum, suggesting a better interpretation of near-field experiments.

Neste trabalho, apresentamos o resultado de nossas investigações em amostras de poços quânticos parabólicos (PQW) de AlGaAs crescidas em substratos de GaAs por MBE (Molecular Beam Epitaxy). Nossos estudos se concentram nas implicações da variação do fator g de Landé ao longo da estrutura dos PQW, a qual ocorre em virtude da dependência dessa grandeza com respeito ao conteúdo de Al na liga AlGaAs. Essas implicações são analisadas através de medidas de transporte eletrônico (medidas de Hall e do efeito Shubnikov-de Haas). As medidas de Subnikov-de Haas a temperaturas da ordem de dezenas a centenas de milikelvin com variação do ângulo de inclinação se mostram um eficiente método para a determinação do fator g. Distinguimos não só o fator g determinado pelas propriedades da liga, como também uma contribuição oriunda de efeitos de muitos corpos (contribuição de troca). Por outro lado, as medidas de Hall nos revelam um comportamento anômalo, que mostramos não ter origem no conhecido "efeito Hall anômalo" presente em materiais ferromagnéticos, nem em efeitos de ocupação de múltiplas sub-bandas. Atribuímos o fenômeno a um efeito "válvula de spin", conseqüente da variação espacial do fator g. Nossas observações nos permitem a idealização de um transistor "válvula de spin", prescindindo do emprego de materiais magnéticos. / We present the results of our investigations concerning MBE grown AlGaAs/GaAs parabolic quantum well (PQW) samples. We focused on the variation of the Landé g factor along the structure of the PQWs, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The implications are studied by Hall and Shubnikov-de Haas measurements. Shubnikov-de Haas measurements at temperatures of the order of tenths to hundreds of milikelvin with variation of the tilt angle are shown to be an efficient method for the determination of the g factor. We could distinguish not only the alloy g factor, but its many body contribution (exchange contribution). On the other hand, Hall measurements exhibit an unusual behavior, which we prooved it has no relation neither to the well known "anomalous Hall effect", a characteristic of ferromagnetic materials, nor to a multi subband occupation effect. We atribute such behavior to a "spin valve effect", caused by the spatial variation of the g factor. Our observations allow us to idealize a "spin valve" transistor, without any ferromagnetic material in its structure.

La plasmonique est un domaine de la nano-photonique qui étudie le comportement de la lumière à des échelles sub-longueurs d'ondes en présence de métaux. Les plasmons polaritons de surface (SPPs) sont des modes électromagnétiques qui se propagent à l'interface entre un diélectrique et un métal. Les SPPs trouvent des applications dans plusieurs domaines comme la communication et le traitement tout-optique du signal, la spectroscopie, la détection en biologie et en chimie. De nombreux composants plasmoniques (modulateurs, coupleurs, détecteurs ...) ont été démontrés ces dernières années. Cependant, leur l'intégration reste conditionnée par l'absence d'un générateur compact (pompage électrique, dimensions réduites) et par les grandes pertes ohmiques. Les techniques standards de génération de SPs nécessitent l'alignement d'un laser externe sur un prisme ou un réseau de diffraction afin d'adapter le vecteur d'onde incident avec celui du plasmon. L'approche que nous avons choisie est basée sur l'utilisation de lasers à semiconducteur ayant une polarisation transverse magnétique (TM) comme source d'excitation et de gain. Notre approche, permet d'obtenir des dispositifs compacts et facilement intégrables sur puce. Pendant ma thèse j'ai étudié expérimentalement et numériquement les performances d'un laser en fonction rapprochement du contact métallique à sa région active. La proximité du gain optique au métal est nécessaire pour la réalisation de dispositifs plasmoniques actifs. J'ai démontré la génération et l'amplification des plasmons de surface dans la bande télécom (λ=1.3µm), avec des dispositifs compacts, à base de semiconducteurs, fonctionnant par injection électrique et à température ambiante. Notamment, j'ai réalisé une architecture élégante, avec coupleur intégré, pour la génération de SPPs accessibles sur le sommet du dispositif. Un dispositif avec gaine superficielle ultrafine a permis de démontrer un mode hybride plasmonique avec une fraction consistante de champ électrique à l'interface métal/semiconducteur. Finalement, j'ai montrée que la structuration nanométrique du contact métallique réduit les pertes du mode laser. Les résultats sont renforcés par une nouvelle technique de imagerie de champ proche (SNOM) qui a permis de mesurer les SPPs à l'interface métal/or et à l'interface métal/ semiconducteur. Grâce aux mesures SNOM, il a aussi été possible de démontrer sans aucune ambiguïté l'effet de la structuration du métal sur le mode optique. / The field of plasmonics is experiencing a rapid development, due to the interest in studying the behavior of light at the nanometer scale. Key ingredients of plasmonics are the surface plasmons (SPs), electromagnetic modes localized at the interface between a metal and a dielectric. SPs rely on the interaction between electromagnetic radiation and conduction electrons at metallic interfaces or in "small" metallic nanostructures. The recent intense activity on plasmonics has been also enabled by state-of-the-art nano fabrication techniques and by high-sensitivity optical characterization techniques. These tools pave the way to promising applications (integration in electronics, chemical and biological detection...), which exploit the SP peculiarity of confining optical fields over sub-wavelength mode volumes. The number of publications concerning plasmonics has been continuously increasing over the last twenty years giving rise to a dynamic research context. Several plasmonic devices have been demonstrated during the last years (modulators, couplers, detectors ...). However their integration is limited by the absence of a compact generator (electrical pumping, small dimensions) and by the huge ohmic losses. Standard techniques for surface plasmon polariton (SPP) generation need an external alignment with a laser source on a prism or on a grating. Our approach is based on semiconductor lasers sources with a transverse magnetic (TM) polarization. Therefore, it is possible to obtain compact semiconductor devices suitable for the on chip integration. During my thesis I studied experimentally and numerically the performance of a diode laser as a function of the metal distance from its active region. The proximity of the gain to the metal is necessary to realize active plasmonic devices. I demonstrated the generation and the amplification of SPP in the telecom range (λ=1.3µm) with compact semiconductor based devices, operating at room temperature and by electrical injection. I realized an elegant architecture with an integrated coupler grating for the SPP generation. The SPPs are directly accessible at the device surface. An ultra-thin cladding device allowed the demonstration of a hybrid plasmonic laser with a consistent fraction of electric field at the metal/semiconductor interface. Finally I demonstrated that the metal patterning allows a loss reduction, decreasing the laser threshold. The results are strengthened by a new near-field technique (NSOM) which permitted to measure the SPPs at the metal/air interface and at the metal/semiconductor interface. Thanks to the NSOM we showed unambiguously the effect of the metal patterning on the optical mode.

Entender os processos em superfície/interface de filmes e seus efeitos sobre as propriedades ópticas e elétricas de materiais orgânicos é de grande importância tecnológica. Esta pesquisa descreve a fabricação e caracterização de filmes poliméricos extremamente finos (espessura <10 nm) e homogêneos compostos por camadas de polímero/polieletrólitos e estruturas com modulação de energia ou poços quânticos. O objetivo principal foi o estudo dos processos de transferência de carga e energia em tais estruturas. Os polímeros luminescentes utilizados foram poli(9,9 dioctilfluoreno) (PFO) poli(p-fenileno vinileno (PPV). O PPV foi obtido a partir do precursor poli(cloreto de tetraidrotiofeno de xililideno) (PTHT). A técnica de deposição denominada deposição camada por camada assistida por spin (SA-LbL) foi utilizada para obtenção dos filmes. Medidas de absorbância confirmaram o crescimento linear das camadas para as interfaces polieletrólito/polieletrólito e polímero/polieletrólito. Com o objetivo de entender a transferência do elétron &pi; do polímero conjugado para o polieletrólito, as configurações das estruturas poliméricas foram alteradas através da deposição de diferentes monocamadas de polieletrólito sobre o filme polimérico. Observamos que os elétrons &pi; foram efetivamente transferidos para os polieletrólitos que possuem alta afinidades eletrônica. Este efeito interfere fortemente na absorção bem como nas características de condução do filme polimérico ultrafino. A absorção é restabelecida após a conversão de PTHT em PPV. Medidas de fotoluminescência (PL) em filmes PFO/PPV resultam em curvas de emissão com picos característicos de ambos os polímeros, o que confirma que a técnica SA-LbL permite a deposição de estruturas poliméricas multicamadas. As várias configurações de filmes obtidas elucidaram os processos de transferência que ocorrem em diferentes interfaces, tais como: mudança da sequencia de deposição do polieletrólito, número de camadas duplas PTHT/DBS e a introdução de camadas separadoras. Além disso, um único poço quântico, ou seja, estruturas formadas por uma camada PPV cercada por barreiras de PFO com 10 nm de espessura foram obtidas. Medidas de absorbâcia, PL e excitação mostraram uma eficiente migração estado excitado da barreira de PFO para o PPV (poço). A homogeneidade da imagem confocal, demonstrou um rigoroso controle da camada de cobertura ao nível de um única monocamada e sem contaminação pelos materiais depositados sequencialmente. A microscopia confocal de fluorescência (CFM) e espectroscopia de fluorescência resolvida no tempo (FLIM) foram utilizadas para caracterizar a dinâmica do exciton e o seu confinamento nos poços quânticos. As medidas de CFM demonstraram que excitons que são gerados na barreira de PFO são eficientemente transferidos para o PPV. Além disso, o tempo de decaimento da emissão PFO residual é fortemente reduzido devido a processos de migração concorrentes no poço. O tempo de decaimento de PPV diminui substancialmente para poços com espessuras abaixo de 5 nm como resultado da auto-aniquilação do exciton. Dessa forma, as estruturas de MQW obtidos pela técnica de SA-LbL podem ser usadas para estudar a transferência de energia, efeitos túneis e para a construção de novos dispositivos optoelectrónicos com maior eficiência. / The understanding of surface/interface processes and their effects on optical/electrical properties of organic materials is of strong technological importance. This research describes the fabrication and characterization of extremely thin (thickness <10 nm) and homogeneous multilayered polymeric structures including polymer/poly-electrolyte layers and structures with energy modulation such as quantum well. Our main purpose was the study of charge and energy transfer processes in such energy modulated structures. The luminescent polymers used were Poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) and poly(p-phenylenevinylene) (PPV). PPV has been obtained from the poly(xylyliden tetrahydrothiophenium chloride) (PTHT) precursor. The so-called Spin Self-Assembly Layer-by-Layer deposition method (SA-LbL) was utilized to obtain the films. Absorption measurements confirmed the linear growth of layers using for polyelectrolyte/polyelectrolyte and polymer/polyelectrolyte interfaces. In order to understand the &pi;-electron transfer from the conjugated polymer to charged states of the polyelectrolyte, the configurations of the polymeric structures were modified by depositing different polyelectrolyte monolayer on the polymer film. We observed that &pi;-electrons were effectively transferred to polyelectrolytes that have high electron affinities. This effect strongly affects both absorption and conduction features of such very thin polymeric film. The absorption is restored after the conversion of PTHT in PPV. Photoluminescence measurements on PFO/PPV films result in emission curves with characteristic peaks of both polymers, confirming that SA-LbL technique allows deposition of multilayer polymeric structures. The various film configurations elucidates the transfer processes occurring at different interfaces like: change of polyelectrolyte deposition order, number of PTHT/DBS bilayers and introduction of spacers. In addition, Single Quantum Well (SQW), i.e., structures consisted of PPV layer surrounded of 10 nm thick PFO barriers were obtained. Optical absorption, PL and excitation spectroscopy showed an efficient excited state migration from the PFO barrier to the PPV well. The confocal image homogeneity demonstrated the layer coverage control at a monolayer level and without layer intermixing of the sequentially deposited polymeric materials. High resolution Confocal Fluorescence Microscopy (CFM) and Fluorescence Life spectroscopy and Imaging (FLIM) were used to characterize the exciton dynamics and confinement in quantum well. The CFM measurements demonstrated that excitons generated at the PFO barrier are efficiently transferred to the PPV well. Furthermore, the decay time of the residual PFO emission is strongly reduced due to the competing migration process in the well. The decay time of PPV decreases substantially for well thicknesses below 5 nm as a result of exciton self-annihilation. Thus, the MQW structures obtained by SA-LbL technique can be used to study energy transfer, tunneling effects and to build up new optoelectronic devices with greater efficiency.