Thesis (M.App.Sc.) - Carleton University, 2006. / Includes bibliographical references (p. 199-201). Also available in electronic format on the Internet.

Thesis (M.App.Sc.) - Carleton University, 2006. / Includes bibliographical references (p. 192-196). Also available in electronic format on the Internet.

Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 106-108). Also available in electronic format on the Internet.

Thesis (M.S.)--Oregon State University, 2011. / Printout. Includes bibliographical references (leaves 85-91). Also available on the World Wide Web.

Thesis (Ph. D.)--University of Washington, 2006. / Vita. Includes bibliographical references (leaves 97-102).

<p> This thesis contributes to the computer-aided design (CAD) of spiral inductors and LC resonators with spiral inductors exploiting full-wave electromagnetic (EM) analysis.</p> <p> The spiral inductor is widely used in radio frequency integrated circuits (RF ICs), such as low noise amplifiers (LNA) and voltage controlled oscillators (VCO). The design of spiral inductors has a direct influence on the performance of these circuits. Recently proposed optimization methods for spiral inductors are usually based on circuit models, which are computationally efficient but inaccurate compared with full-wave electromagnetic (EM) simulations.</p> <p> For the first time, we develop an optimization technique for the design of spiral inductors and LC resonators exploiting both the computational efficiency of a (cheap) circuit model and the accuracy of a full-wave EM analysis, based on geometric programming (GP) and space mapping (SM). With the new technique, we can efficiently obtain EM-validated designs with considerable improvement over those obtained with traditional optimization methods.</p> / Thesis / Master of Applied Science (MASc)

This thesis proposes a multifaceted production test and post-manufacture yield enhancement framework for RF systems. This framework uses low-cost test and post-manufacture calibration/tuning techniques. Since the test cost and the yield of the RF circuits/sub-system directly contribute to the manufacturing cost of RF systems, the proposed framework minimizes overall RF systems' manufacturing cost by taking two approaches. In the first approach, low-cost testing methodologies are proposed for RF amplifiers and integrated RF substrates with an embedded RF passive filter and interconnect. Techniques are developed to test RF circuits by the analysis of low-frequency signal of the order of few MHz and without using any external RF test-stimulus. Oscillation principles are used to enable testing of RF circuits without any external test-stimulus. In the second approach, to increase the yield of the RF circuits for parametric defects, RF circuits are tuned to compensate for a performance loss during production test using on-board or on-chip resources. This approach includes a diagnosis algorithm to identify faulty circuits within the system, and performs a compensation process that adjusts tunable components to enhance the performance of the RF circuits. In the proposed yield improvement methodologies, the external test stimulus is not required because the stimulus is generated by the RF circuit itself with the help of additional circuitry and faulty circuits are detected using low-cost test methods developed in this research. As a result, the proposed research enables low-cost testing and self-healing of RF systems.

The objective of the proposed research is to understand the design and reliability of RF front-end building blocks using SOI CMOS and SiGe BiCMOS technologies for high dynamic-range applications. This research leads to a comprehensive understanding of dynamic range in SOI CMOS devices and contributes to knowledge leading to improvement in overall dynamic range and reliability of RF building blocks. While the performance of CMOS transistors has been improving naturally with scaling, this work aims to explore the possibilities of improvement in RF performance and reliability using standard layouts (that don't need process modifications). The total-ionizing dose tolerance of SOI CMOS devices has been understood with extensive measurements. Furthermore, the role of body contacts in SOI technology is understood for dynamic range performance improvement. In this work, CMOS low-noise amplifier design for high linearity WLAN applications and its integration with RF switch on the same chip is presented. The LNA and switches designed provide state-of-the-art performance in silicon based technologies. Further, the work aims to explore applications of SiGe HBT in the context of highly linear and reliable RF building blocks. The RF reliability of SiGe HBT based RF switches is investigated and compared with CMOS counterparts. The inverse-mode operation of SiGe HBT based switches is understood to give considerably higher linearity.

The objective of the research presented in this dissertation is to explore the achievable dynamic range limits in high-performance RF front-ends designed using SiGe HBTs, with a focus on complementary (npn + pnp) SiGe technologies. The performance requirements of RF front-ends are high gain, high linearity, low dc power consumption, very low noise figure, and compactness. The research presented in this dissertation shows that all of these requirements can easily be met by using complementary SiGe HBTs. Thus, a strong case is made in favor of using SiGe technologies for designing high dynamic range RF front-ends. The contributions from this research are summarized as follows: 1. The first-ever comparison study and comprehensive analysis of small-signal linearity (IIP3) for npn and pnp SiGe HBTs on SOI. 2. A novel comparison of large-signal robustness of npn and pnp SiGe HBTs for use in high-performance RF front-ends. 3. A systematic and rigorous comparison of SiGe HBT compact models for high-fidelity distortion modeling. 4. The first-ever feasibility study of using weakly-saturated SiGe HBTs for use in severely power constrained RF front-ends. 5. A novel X-band Low Noise Amplifier (LNA) using weakly-saturated SiGe HBTs. 6. Design and comprehensive analysis of RF switches with enhanced large-signal linearity. 7. Development of novel methods to reduce crosstalk noise in mixed-signal circuits and the first-ever analysis of crosstalk noise across temperature. 8. Design of a very high-linearity cellular band quadrature modulator for use in base-station applications using first-generation complementary SiGe HBTs.