Reflectance anisotropy spectroscopy is a non-contact technique for surface detection. which means through the optical reflection from surface of the substrate measured. Because of its high sensitivity, RAS is used for in real-time control of semiconductor epitaxy. On our study, RAS is used to study the surface characteristics of liquid crystal alignment layer. We used rubbing for polyimide film to achieve alignment purposes. The rubbing strength is determined by adjusting the pile impress and the number of rubbed. We found that the anisotropy spectroscopy will appear after rubbing. And the strength of RA signals changes with photon energy of the probe beam. The pretile angle of the liquid crystal sandwiched in between rubbed PI show certain degree correlation with RA strength. In addition, using surface free energy measurement to explore the relationship with pretilt angle and try to connect three of them. We also tried to measure the reflection signal from the sample back. We found the signal of sample back would decay in UV region and it may be a result of UV absorption in the substrate.

Spectroscopic second-harmonic generation (SHG) and reflectance-anisotropy spectroscopy (RAS) are used to probe molecular adsorption on clean reconstructed single-domain stepped Si(001) in ultra-high vacuum (UHV). We implement a simplified bond hyperpolarizability model (SBHM) as a common microscopic analysis for SHG and RAS. Three different scenarios are studied: (i) The dissociative adsorption of molecular hydrogen on dangling bonds of D[subscript B] step-edges. (ii) Structural changes to rebonded r-D[subscript B] steps induced by exposure to atomic hydrogen. (iii) The adsorption of cyclopentene on Si(001)(2x1) terrace dimers in a [2+2] cycloaddition pathway. Using the SBHM we develop a new optical fingerprinting method to isolate, identify and monitor individual types of bonds (e.g. dimers, rebonds, dangling bonds, backbonds) and their chemical activity on a single-domain stepped Si(001) surface using nonresonant, but rotationally-anisotropic, second-harmonic generation (RA-SHG). The methods presented here will be applicable to many material systems and allow to track, in-situ and in real-time, the chemical action of adsorbates on surfaces. / text

Diese Arbeit untersucht das Aufwachsen von dünnen GaP-Schichten auf Si(100)-Oberflächen mittels metallorganischer Gasphasenabscheidung (MOVPE) und die damit verbundene Entstehung von Antiphasendomänen (APDs). Die Vermessung der Si(100)-Substratoberfläche, der III-V/Si(100)-Grenzfläche und der abgeschiedenen GaP-Filme mit oberflächenempfindlichen Messverfahren dient der Etablierung APD-freier III-V-Heteroepitaxie auf Si(100). Die Präparation reiner Si(100)-Oberflächen frei von Sauerstoff in der MOVPE-Umgebung konnte durch Röntgenphotoelektronenspektroskopie (XPS) belegt werden. Vorwiegend doppelgestufte Substrate wurden sowohl auf 0.1°, 2° als auch 6° fehlorientierten Substraten erzielt. Im Widerspruch zu etablierten Ergebnissen im Ultrahochvakuum richteten sich die Dimere auf 0.1° und 2° Proben senkrecht zu den Doppelstufenkanten aus, vermutlich durch den Einfluss des Wasserstoffs in der MOVPE. Infrarotspektroskopie (FTIR) belegte eine Monohydridterminierung infolge der Präparation, während in-situ Reflexions-Anisotropie-Spectroskopie (RAS) zeigte, dass diese bei höheren Prozesstemperaturen nicht vorliegt. Für die GaP-Heteroepitaxie auf diesen Substraten wurde ein optisches in-situ Messverfahren für die quantitative Bestimmung des APD-Gehaltes entwickelt, welches auf dem eingehenden Verständnis der Rekonstruktionen von GaP(100), der assozierten RAS-Signaturen und dem mit Rastertunnelmikroskopie (STM) und Beugung niedrigenergetischer Elektronen (LEED) etablierten mikroskopischen Verständnis der Oberflächen beruht. Die APD-Quantifizierung mittels RAS wurde durch empirische Korrektur von Interferenzeffekten und optische Modellrechnungen, die auch Rückschlüsse auf die Grenzflächenanisotropie erlauben, deutlich verbessert. Der Abgleich mit unterschiedlichsten Mikroskopiemethoden, basierend auf niedrigenergetischen Elektronen (LEEM), Elektronentransmission (TEM) und Rasterkraftverfahren (AFM) bestätigt die erzielten Ergebnisse. / The present work investigates the growth of thin, pseudomorphic GaP films by metalorganic vapor phase epitaxy (MOVPE) on Si(100) surfaces by a variety of surface-sensitive methods and pays with specific attention to the substrate induced anti-phase disorder in this lattice matched model system for III-V/Si(100) heteroepitaxy. Thorough X-ray photoelectron spectroscopy investigations verified the preparation of clean Si(100) surfaces free of oxygen in the MOVPE ambient. Predominantly double-layer stepped Si(100) surfaces were obtained for 0.1°, 2°, and 6° misoriented substrates. In contrast to results established in ultra-high vacuum (UHV), double-layer steps with dimers oriented perpendicular to their edges were observed, which was attributed to the presence of hydrogen as a process gas in the MOVPE environment. A monohydride termination of Si(100) was determined after substrate preparation by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. Optical in situ spectroscopy was established as a method for the quantitative evaluation of anti-phase disorder in GaP heteroepitaxy based on a detailed understanding of the GaP(100) surface reconstructions, of the development of the corresponding RAS signatures, and of the associated surface structure studied by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The in situ RAS quantification was greatly improved by empirical correction of thin film interference and optical model calculations, which also enable extraction of the GaP/Si(100) interface anisotropy. The characterization was supported by benchmarking to atomic force microscopy (AFM) and transmission electron microscopy (TEM) results as well as to low energy electron microscopy (LEEM), which was used for surface sensitive visualization of anti-phase domains on a mesoscopic length scale.