IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the manufacturing process requires transformation into a reliable, repeatable production process. This need is identified within the process scrap percentage of the process when benchmarked against the more mature Si-CVD process. With this wide-ranging product base and different material systems, flexible processes and systems are essential. The negative impact however, of this demanded flexibility is a complex system, resulting in instability. Minor fluctuations in time, flow, pressure, temperature, or composition in the manufacturing process, will lead to characteristic differences in the produced material [product], when comparing the prescribed run to the actual run. The product profile changes very rapidly, correspondingly the failure profile of the process is equally as dynamic, it is essential therefore that the analysis and projected activities and actions can be identified and consolidated in a timely manner. This project evaluates the process used by IQEE to manufacture III/V compound semi-conducting material structures and uses the business performance to identify the process drivers. One year's [1997] business and process information is used for a single iteration of the improvement cycle. These drivers are then utilised as operators and offer the critical weaknesses in the process related to performance blockages. Some of the techniques utilised in the process evaluation and cause derivation; are original contributions specifically derived for use with a multi-platform complex process with multiple cause and effect operators. A double reporting FMEA contributes a differing rank for like machines running differing products, offering a machine specific failure profile. A novel composite of P-diagram and process flow techniques enables determination of activity influences confirming the key failure mechanism as previously identified by the business risk analysis. This project concludes by nominating the key failure mechanism accounting for 41% of the approximate 50% scrap figure identified again within the business risk analysis. The effects attributed to this failure mechanism are 2- dimensionally analysed utilising an original double operating FMEA, plotting effect to effect for the individual causes, offering a prioritised list of failure categories. The highest priority failure mode is addressed by an equipment design exercise, resulting in an overall 10% sales potential recontribution.

No description available.

Técnicas de formatação de pulsos permitem o controle das propriedades espectrais e temporais de um feixe laser criando novas possibilidades de estudo da interação luz-matéria. Neste trabalho estudamos as propriedades ópticas não-lineares via formatação de pulsos ultracurtos de três semicondutores: Óxido de Zinco, Silício e Nitreto de Gálio; em três abordagens diferentes. Discutimos também as consequências da distorção de fase em processos não lineares devido à natureza discreta do dispositivo modulador. Primeiramente, investigamos a otimização da emissão excitônica em um cristal de Óxido de Zinco através de uma técnica de otimização que utiliza algoritmo genético, observamos que a fase espectral que otimiza o processo cria um perfil temporal do pulso que indica um acoplamento do tipo éxciton-fônon no cristal. Estudamos ainda o efeito da aplicação de uma máscara de fase senoidal, criando um trem de pulsos, no processo de formação de estruturações superficiais periódicas induzidas a laser no Silício - o fator de eficácia das estruturações foi controlado através dos tempos de separação entre os sub-pulsos, resultado que pôde ser interpretado usando a teoria de Sipe-Drude. Por fim, estudamos a influência da formatação de pulsos em processos de absorção multi-fotônicos em um filme fino de GaN onde verificamos, inicialmente, que o material apresenta um coeficiente de absorção não-linear atípico. Modelamos este comportamento usando equações de taxa e investigamos sua modificação aplicando uma fase quadrática. / Pulse shaping techniques allows the control of spectral and temporal properties of a laser beam, creating new possibilities for the study of the light-matter interaction. In this work we study the nonlinear optical properties, via ultrashort pulses, of three semiconductors; Zinc Oxide, Silicon and Gallium Nitride in three different approaches. We also discuss the consequences of phase distortion in nonlinear processes due to the discrete nature of the light modulator device. Initially, we investigated the optimization of exciton emission in a zinc oxide crystal through using a genetic algorithm; we observed that the spectral phase that optimizes the process creates a temporal pulse profile that indicates an exciton-phonon coupling in the crystal. We also studied the effect of the application of a sinusoidal phase mask, creating a pulse train, in the process of laser induced periodic surface structures in Silicon; the efficacy factor of the produced structures was controlled through the separation time between the sub-pulses and interpreted using the Sipe-Drude theory. Finally, we study the influence of pulse shaping on multi-photon absorption processes in a thin film of GaN; we found, initially, that the material exhibits an atypical nonlinear absorption coefficient. We model this behavior using rate equations and investigate its modification by applying a quadratic phase.

Dans cette dissertation nous présentons une étude expérimentale et théorique sur les propriétés optiques de nanotubes de carbone mono-parois (SWNTs) semi-conducteurs. Nous nous concentrons sur les aspects et phénomènes typiquement quantiques dont la description nécessite de sortir du cadre de la physique classique et des équations de Maxwell. Notre résultat experimental le plus important est l'observation du dégroupement des photons dans la photoluminescence (FL) émise par les SWNTs. Tenant compte des particularités de notre échantillon qui consiste de SWNTs enrobés dans un surfactant et déposés sur un substrat fonctionalisé, nous montrons que l'absence d'émission simultanée de plusieurs photons est dûe à la localisation des excitons dans des pièges de quelques nanomètres de long sur nanotube. L'annihilation exciton-¬exciton rapide et efficace résultant de la dimension réduite des nanotubes de carbone joue un role déterminant pour éviter l'émission de paires de photons. La fidèle reproduction des larges lignes asymétriques en FL par un model physique reposant sur le confinement des excitons supporte cette vision. Nous calculons le spectre d'une boîte quantique (QD) formée sur un SWNT et démontrons que le couplage de l'exciton avec les phonons acoustiques de faible énergie du nanotube cause un déphasage ultra-rapide et non-markovien de l'état optiquement excité. Dans le domaine spectral, la force d'oscillateur est transférée de la transition sans phonon (ZFL) vers des ailes associées aux phonons et présentant une forte asymétrie aux températures cryogéniques. Nous prouvons que nos données sont des preuves directes de la réalisation expérimentale du modèle spin-boson dans le régime (sous-)ohmique. Ceci est une conséquence de l'uni-dimensionnalité du bain de phonons se réfléchissant dans la densité spectrale gouvernant les dissipations. Nous soulignons les différences qua-litatives par rapport aux boîtes quantiques traditionnels dans une matrice à trois dimensions, et discutons brièvement les conséquences pour l'utilisation des SWNT¬QDs dans le traitement d'information quantique. Une possibilité passionnante ouverte par le fort couplage exciton-phonon dans les nanotubes de carbone est leur utilisation comme résonateurs mécaniques pour le refroidissement assisté par laser. Nous proposons un dispositif basé sur un SWNT suspendu où le confinement de l'exciton est contrôlé par de fines pointes servant de grilles. Le potentiel appliqué aux pointes peut en outre être utilisé pour induire le couplage de l'exciton au mode de flexion du SWNT et pour régler sa force. La diffusion inélastique d'un faible laser désaccordé vers le rouge permet alors de réduire le nombre d'occupation du mode fondamental de flexion jusqu'àl'état fondamental quantique. Dans une tentative de donner une image unifiée pour l'ensemble de nos obser-vations expérimentales, nous proposons aussi une origine physique à la formation de SWNT-QDs dans notre échantillon. Nous considérons la présence d'une impureté h chargée dans les environs du nanotube et démontrons que le champ électrique qui en résulte piège les excitons du SWNT. Les caractéristiques particulières de ce potentiel confinant pourraient expliquer la plupart des caractéristiques expérimentales. Enfin, nous montrons comment le couplage spin-orbite non-nul récemment me-surédans des expériences de transport permet la manipulation purement optique du spin dans des nanotubes de carbone. Nous effectuons des simulations numériques basées sur les équations de Bloch pour démontrer que la préparation du spin avec haute fidélitéest réalisable. La manipulation optique cohérente du spin et de pos¬sibles utilisations du spin des nanotubes de carbone dans le traitement quantique de l'information sont également discutées. Alliant de nouveaux résultats expérimentaux surprenants et de diverses études théoriques et numériques, ce travail met l'accent sur le potentiel fascinant des nano-tubes de carbone dans l'étude de la physique quantique des matériaux de dimension réduite.

No description available.

Made available in DSpace on 2014-10-09T12:41:53Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:09:30Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:11/05408-2

abstract: This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts. / Dissertation/Thesis / Ph.D. Electrical Engineering 2012

Técnicas de formatação de pulsos permitem o controle das propriedades espectrais e temporais de um feixe laser criando novas possibilidades de estudo da interação luz-matéria. Neste trabalho estudamos as propriedades ópticas não-lineares via formatação de pulsos ultracurtos de três semicondutores: Óxido de Zinco, Silício e Nitreto de Gálio; em três abordagens diferentes. Discutimos também as consequências da distorção de fase em processos não lineares devido à natureza discreta do dispositivo modulador. Primeiramente, investigamos a otimização da emissão excitônica em um cristal de Óxido de Zinco através de uma técnica de otimização que utiliza algoritmo genético, observamos que a fase espectral que otimiza o processo cria um perfil temporal do pulso que indica um acoplamento do tipo éxciton-fônon no cristal. Estudamos ainda o efeito da aplicação de uma máscara de fase senoidal, criando um trem de pulsos, no processo de formação de estruturações superficiais periódicas induzidas a laser no Silício - o fator de eficácia das estruturações foi controlado através dos tempos de separação entre os sub-pulsos, resultado que pôde ser interpretado usando a teoria de Sipe-Drude. Por fim, estudamos a influência da formatação de pulsos em processos de absorção multi-fotônicos em um filme fino de GaN onde verificamos, inicialmente, que o material apresenta um coeficiente de absorção não-linear atípico. Modelamos este comportamento usando equações de taxa e investigamos sua modificação aplicando uma fase quadrática. / Pulse shaping techniques allows the control of spectral and temporal properties of a laser beam, creating new possibilities for the study of the light-matter interaction. In this work we study the nonlinear optical properties, via ultrashort pulses, of three semiconductors; Zinc Oxide, Silicon and Gallium Nitride in three different approaches. We also discuss the consequences of phase distortion in nonlinear processes due to the discrete nature of the light modulator device. Initially, we investigated the optimization of exciton emission in a zinc oxide crystal through using a genetic algorithm; we observed that the spectral phase that optimizes the process creates a temporal pulse profile that indicates an exciton-phonon coupling in the crystal. We also studied the effect of the application of a sinusoidal phase mask, creating a pulse train, in the process of laser induced periodic surface structures in Silicon; the efficacy factor of the produced structures was controlled through the separation time between the sub-pulses and interpreted using the Sipe-Drude theory. Finally, we study the influence of pulse shaping on multi-photon absorption processes in a thin film of GaN; we found, initially, that the material exhibits an atypical nonlinear absorption coefficient. We model this behavior using rate equations and investigate its modification by applying a quadratic phase.

Made available in DSpace on 2014-10-09T12:41:53Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:09:30Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Amostras de dióxido de cério dopadas com La e Fe foram confeccionadas e caracterizadas por uma técnica nuclear baseada em interações hiperfinas conhecida como Correlação Angular Gama-Gama Perturbada (CAP). Como o composto em questão não é radioativo, foram utilizados núcleos radioativos como ponta de prova 111In 111Cd, que decaem através de uma cascata gama-gama 171-245 keV, com nível intermediário possui uma meia-vida de 84ns, spin 5/2- e um momento de quadrupolo elétrico Q= 0,83. Inicialmente uma metodologia para a produção das amostras precisou ser elaborada. As amostras de dióxido de cério e seus dopantes foram produzidas através do processo Sol-Gel, passando por uma calcinação e sinterização até a finalização da amostra. Sendo caracterizada por diversos tipos de técnicas (Difração de Raios-X e Microscopia Eletrônica de Varredura) culminando no estudo através da técnica CAP, para uma compreensão das interações quadrupolares elétricas das amostras e também a possibilidade da existência de comportamento magnético (assunto intensamente investigado dado o interesse na área da spintrônica). Os resultados encontrados foram analisados frente aos conhecimentos encontrados na literatura e as discussões foram feitas em função da variação do elemento dopante, tipos de tratamentos térmicos usados na sinterização e as diferentes temperaturas de medidas. Permitindo uma discussão e interpretação física dos resultados encontrados. / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:11/05408-2

Cette thèse a été motivée par l’étude d’un procédé innovant de production de substrats ultra-minces (d’épaisseur variant de 15 μm à 70 μm), basé sur l’implantation d’hydrogène à haute énergie, dans notre cas comprise entre 1MeV et 2.5MeV. Une telle implantation suivie d’un traitement thermique approprié, conduit au détachement d’un film mince autoporté, appelé « substrat ultra-mince ». L’intérêt de ce procédé de détachement est purement économique, car il ne génère presque aucune perte de matière première. Nous l’avons particulièrement utilisé pour produire des substrats ultra-minces de silicium (100), pour la production des cellules PV bas-coûts. Dans le but d’élargir les champs d’applications du procédé, le détachement de substrats ultra-minces de deux autres matériaux (le Ge et le SiC) très utilisés en électronique a aussi été étudié. Ainsi, dans cette étude, les paramètres optimaux d’implantation (énergie et fluence) et de recuits conduisant au détachement de grandes surfaces de Si(100) ont tout d’abord été investigués. Ensuite, l’application technologique du procédé proposé a été validée par la réalisation des cellules solaires au moyen des substrats ultrafins de Si détachés (50 μm et 70 μm d’épaisseur). Les performances PV obtenues ont été assez proches de celles obtenues avec une cellule référence réalisée sur un substrat standard. Par la suite, une étude détaillée faite par TEM et par FTIR sur les défauts étendus à différents stades de recuits a permis de mettre en lumière la nature et la distribution spatiale des défauts précurseurs de la fracture dans le Si après implantation à haute énergie. Enfin, des essais de détachements réalisés avec le Ge et le SiC, lesquels ont été comparés au cas du Si, ont permis d’en savoir plus sur les critères de détachement. En effet, plus le matériau sera rigide, i.e. plus il aura un module d’Young élevé, plus la fluence et la température de recuit nécessaires pour le détachement seront élevées. / The motivation of this thesis was the study of an innovative process for the production of ultra-thin substrates (with thicknesses between 15 μm and 70 μm), based on the high energy hydrogen implantation, in our case in the range of 1 MeV to 2.5 MeV. Such an implantation followed by an appropriate thermal annealing, lead to the delamination of a freestanding thin layer, that we call “ultra-thin substrate”. The benefit of this delamination process is purely economic, since almost no raw material is lost. We have particularly used this process to produce ultra-thin (100) Si substrates, for the production of low-cost PV solar cells. In order to extend the process application fields, the delamination of ultra-thin substrates of two other materials (Ge and SiC) widely used in electronics has been also studied. In our work, the optimal implantation parameters (energy and fluence) and thermal annealing, leading to the delamination of large areas of Si (100) were first investigated. Subsequently, in order to validate the technological application of our process, solar cells have been performed with ultra-thin silicon substrates delaminated, with thicknesses of 50 μm and 70 μm. Results of PV performances obtained were quite close to those obtained with a reference solar cell achieved on a standard substrate. After that, in order to highlight the nature and the spatial distribution of fracture precursor defects after high energy hydrogen implantation in silicon, which had not yet done so far the subject of specific studies, characterizations have been carried out at different annealing stages, by means of TEM and FTIR. Finally, delamination results obtained with Ge and SiC, which were compared to the case of Si, helped us to learn more about delamination criteria. Indeed, we observed that, as the material rigidity increase, i.e. as the Young modulus is higher, the fluence and temperature require for the delamination will be also high.