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This thesis concerns the development and characterisation of X-ray imaging systems based on single photon processing. “Colour” X-ray imaging opens up new perspectives within the fields of medical X-ray diagnosis and also in industrial X-ray quality control. The difference in absorption for different “colours” can be used to discern materials in the object. For instance, this information might be used to identify diseases such as brittle-bone disease. The “colour” of the X-rays can be identified if the detector system can process each X-ray photon individually. Such a detector system is called a “single photon processing” system or, less precise, a “photon counting system”. With modern technology it is possible to construct photon counting detector systems that can resolve details to a level of approximately 50 µm. However with such small pixels a problem will occur. In a semiconductor detector each absorbed X-ray photon creates a cloud of charge which contributes to the image. For high photon energies the size of the charge cloud is comparable to 50 µm and might be distributed between several pixels in the image. Charge sharing is a key problem since, not only is the resolution degenerated, but it also destroys the “colour” information in the image. This thesis presents characterisation and simulations to provide a detailed understanding of the physical processes concerning charge sharing in detectors from the MEDIPIX collaboration. Charge summing schemes utilising pixel to pixel communications are proposed. Charge sharing can also be suppressed by introducing 3D-detector structures. In the next generation of the MEDIPIX system, Medipix3, charge summing will be implemented. This system, equipped with a 3D-silicon detector, or a thin planar high-Z detector of good quality, has the potential to become a commercial product for medical imaging. This would be beneficial to the public health within the entire European Union. / Denna avhandling berör utveckling och karaktärisering av fotonräknande röntgensystem. ”Färgröntgen” öppnar nya perspektiv för medicinsk röntgendiagnostik och även för materialröntgen inom industrin. Skillnaden i absorption av olika ”färger” kan användas för att särskilja olika material i ett objekt. Färginformationen kan till exempel användas i sjukvården för att identifiera benskörhet. Färgen på röntgenfotonen kan identifieras om detektorsystemet kan detektera varje foton individuellt. Sådana detektorsystem kallas ”fotonräknande” system. Med modern teknik är det möjligt att konstruera fotonräknande detektorsystem som kan urskilja detaljer ner till en upplösning på circa 50 µm. Med så små pixlar kommer ett problem att uppstå. I en halvledardetektor ger varje absorberad foton upphov till ett laddningsmoln som bidrar till den erhållna bilden. För höga fotonenergier är storleken på laddningsmolnet jämförbar med 50 µm och molnet kan därför fördelas över flera pixlar i bilden. Laddningsdelning är ett centralt problem delvis på grund av att bildens upplösning försämras, men framför allt för att färginformationen i bilden förstörs. Denna avhandling presenterar karaktärisering och simulering för att ge en mer detaljerad förståelse för fysikaliska processer som bidrar till laddningsdelning i detektorer från MEDIPIX-projekter. Designstrategier för summering av laddning genom kommunikation från pixel till pixel föreslås. Laddningsdelning kan också begränsas genom att introducera detektorkonstruktioner i 3D-struktur. I nästa generation av MEDIPIX-systemet, Medipix3, kommer summering av laddning att vara implementerat. Detta system, utrustat med en 3D-detektor i kisel, eller en tunn plan detektor av högabsorberande material med god kvalitet, har potentialen att kunna kommersialiseras för medicinska röntgensystem. Detta skulle bidra till bättre folkhälsa inom hela Europeiska Unionen.

Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2015-06-09T18:22:48Z No. of bitstreams: 0 / Made available in DSpace on 2015-06-09T18:22:49Z (GMT). No. of bitstreams: 0 / Tese (Doutorado em Tecnologia Nuclear) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2015-06-09T18:22:48Z No. of bitstreams: 0 / Made available in DSpace on 2015-06-09T18:22:49Z (GMT). No. of bitstreams: 0 / O presente trabalho teve como objetivo utilizar a técnica nuclear de Correlação Angular γ-γ Perturbada (CAP) para a medida de interações hiperfinas em filmes finos e amostras em pó de óxidos semicondutores SnO2 e TiO2 puros e dopados com metais de transição para uma investigação sistemática de defeitos estruturais e do magnetismo sob o ponto de vista atômico tendo como principal motivação a candidatura à aplicação desses óxidos em spintrônica. O trabalho também teve como foco a preparação e caracterização das amostras por meio de técnicas convencionais, como difração de raios X, microscopia eletrônica de varredura, espectroscopia de energia dispersiva e medidas de magnetização. Amostras puras dos filmes foram medidas mediante a variação sistemática da temperatura de tratamento térmico e do campo magnético aplicado. Tais medidas foram realizadas no HISKP, na Universidade de Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn), através de implantação de íons de 111In(111Cd) ou 181Hf(181Ta); no IPEN, por sua vez, essas medidas foram realizadas após a difusão dos mesmos núcleos de prova. Outra parte das medidas CAP foram feitas através de implantação de íons de 111mCd(111Cd) e 117Cd(117In) no Isotope Mass Separator On-Line (ISOLDE) do Centre Européen Recherche Nucléaire (CERN). As medidas foram realizadas nos intervalos de temperatura de 8 K a 1173 K. Para análise de ferromagnetismo, medidas foram feitas à temperatura ambiente com e sem aplicação de campo magnético externo. Após a comparação dos resultados das medidas macroscópicas e atômicas das amostras, foi possível concluir que há uma correlação entre os defeitos, o magnetismo e a mobilidade dos portadores de carga nos semicondutores aqui estudados. Um passo adiante na busca de semicondutores, cujo ordenamento magnético possibilite o seu uso na eletrônica baseada em spin. Alguns resultados já foram publicados, incluindo resultados obtidos na Universidade de Bonn durante o período de doutorado sanduíche [1-7]. / Tese (Doutorado em Tecnologia Nuclear) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

La motivation de cette thèse est la production innovante de germes ultra-minces de silicium cristallin. L’utilisation de tels germes dans un procédé de fabrication de cellules solaires permettrait une réduction importante de la consommation de silicium, qui compte déjà pour 60% du coût de production des panneaux solaires de première génération. Dans le cadre de cette thèse, une méthode pionnière de détachement de germes minces a été mise en oeuvre. Dans cette méthode, une contrainte induite mécaniquement est guidée par des défauts étendus induits par l’implantation d’hydrogène. Par cette méthode, le détachement de germes minces d’environ 710nm d’épaisseurs a été obtenu. Le but est ensuite d’utiliser ces germes pour faire croitre du silicium cristallin avec des épaisseurs variables à souhait, soit une technique kerf-free : sans pertes. Cette étude présente ainsi les étapes menant à la mise en oeuvre de ce procédé : en premier lieu, un état de l’art des méthodes de détachement de films ultra-minces existants est réalisé. Celui-ci nous a ainsi guidés vers l’implantation d’hydrogène en tant que méthode viable du guidage de la fracture. Par la suite, différents tentatives de détachement de germes ultra-minces ont été réalisés puis caractérisés, notamment par MEB, MET, AFM et DRX. Dans de bonnes conditions de collage et de croissance de défauts, le détachement de germes ultra-minces de silicium cristallin a été réalisé. Par la suite, la croissance et la cristallisation de couches de silicium amorphe a été réalisée sur les germes détachés. Pour finir, certaines couches détachées ont été utilisées pour la production de cellules solaires prototypes. / The goal of this thesis is to find an innovative way to produce ultra-thin crystalline silicon seeds. The use of such seeds in a solar cell production process could lead to a significant reduction of the silicon consumption, which cost alone is worth 60% of the total cost of a first generation solar panel. Within the context of this PhD thesis, a pioneer seed exfoliation method was implemented. This method use the defects induced by hydrogen implantation to guide a stress-induced spalling process. This method has allowed the exfoliation of 710nm-thick crystalline silicon seeds. These seeds will then be used for the growth of crystalline silicon layers of any desired thickness, hence a totally kerf-free method. This thesis work presents the steps leading to the implementation of this process: firstly, the state of the art of ultra-thin films exfoliation methods is reviewed, which guided us towards the use of hydrogen implantation as a crack guide. Then, different ultra-thin seeds exfoliation processes were tried and characterized, specifically by SEM, TEM, AFM and XRD. In the right conditions of bonding and defects growth, ultra-thin silicon seeds were successfully exfoliated. The growth and crystallization of amorphous silicon layers on these seeds were then studied. Finally, several exfoliated layers were used for the production of prototype solar cells.

Sources of single and polarization-entangled photons are an essential component in a variety of potential quantum information applications. Suitable emitters need to generate photons deterministically and at fast repetition rates, with highest degrees of single-photon purity, entanglement and indistinguishability. Semiconductor quantum dots are among the leading candidates for this task, offering entangled-photon pair emission on-demand, challenging current state-of-the-art sources based on the probabilistic spontaneous parametric down-conversion (SPDC). Unfortunately, their susceptibility to perturbations from the solid-state environment significantly affects the photon coherence and entanglement degree. Furthermore, most quantum dot types suffer from poor wavelength control and emitter yield, due to a random growth process. This thesis investigates the emerging family of GaAs/AlGaAs quantum dots obtained by in-situ Al droplet etching and nanohole infilling. Particular focus is laid on the interplay of growth parameters, quantum dot morphology and optical properties. An unprecedented emission wavelength control with distributions as narrow as ± 1 nm is achieved, using four independent growth parameters: The GaAs infilling amount, the deposition sequence, the migration time and the Al concentration in the barrier material. This enables the generation of large emitter ensembles tailored to match the optical transitions of rubidium, a leading quantum memory candidate. The photon coherence is enhanced by an optimized As flux during the growth process using the GaAs surface reconstruction. With these improvements, we demonstrate for the first time two-photon interference from separate, frequency-stabilized quantum dots using a rubidium-based Faraday filter as frequency reference. Two-photon resonant excitation of the biexciton state is employed for the coherent and deterministic generation of photon pairs with negligible multi-photon emission probability. The GaAs/AlGaAs quantum dots exhibit a very small average fine structure of (4.8 ±2.4) µeV and short average radiative lifetimes of 200 ps, enabling entanglement fidelities up to F = 0.94, which are among the highest reported for any entangled-photon source to date. Furthermore, almost all fabricated emitters on a single wafer exhibit fidelities beyond the classical limit - without any post-growth tuning. By embedding the quantum dots into a broadband-optical antenna we enhance the photon collection efficiency significantly without impairing the high degrees of entanglement. Thus, for the first time, quantum dots are able to compete with SPDC sources, paving the way towards the realization of a semiconductor-based quantum repeater - among many other key enabling quantum photonic elements.:Contents List of Figures ix List of Tables xiii 1 Introduction 1 1.1 Researchmotivation ...................1 1.1.1 Structure of this thesis ................. 3 1.2 Applications based on entangled photons ............. 4 1.2.1 Quantum bits ...................4 1.2.2 Quantum key distribution ................ 5 1.2.3 Qubit teleportation .................. 7 1.2.4 Teleportation of entanglement ..............9 1.2.5 The photonic quantumrepeater .............. 10 1.3 Generation of entangled photons ...............12 1.3.1 The ideal entangled-photon source ............. 12 1.3.2 Non-deterministic photon sources ............. 13 1.3.3 Deterministic photon sources ..............14 2 Fundamentals 17 2.1 Semiconductor quantumdots ................17 2.1.1 Introduction to semiconductor quantum dots .......... 17 2.1.2 Formation of confined excitonic states ............ 19 2.1.3 Energy hierarchy of excitonic states ............. 21 2.2 Entangled photons from semiconductor quantumdots ......... 22 2.2.1 The concept of entanglement ............... 22 2.2.2 Polarization-entangled photon pairs fromthe biexciton radiative decay .. 23 2.2.3 Origin and impact of the exciton fine structure splitting ....... 25 2.2.4 Impact of spin-scattering, dephasing and background photons on the degree of entanglement ..................29 2.3 Quantum dot entangled-photon sources - State of the art ........32 2.4 Exciton radiative lifetime .................. 34 2.4.1 The concept of radiative lifetime .............. 34 2.4.2 Measurement of the radiative lifetime ............35 2.5 Single-photon purity ...................37 2.5.1 Photon number distributions ............... 37 2.5.2 Second-order correlation function .............38 2.5.3 Measurement of the second-order correlation function ....... 40 2.6 Measurement of entanglement ................42 2.6.1 Quantum state tomography ...............43 2.7 Photon coherence and spectral linewidth .............46 2.7.1 The concept of coherence ................ 46 2.7.2 First-order coherence ................. 46 2.7.3 Relation between coherence and spectral linewidth ........ 49 2.7.4 homogeneous vs. inhomogeneous broadening in single quantumdots ..50 2.8 Photon indistinguishability .................51 2.8.1 Hong-Ou-Mandel interference ..............51 2.8.2 Hong-Ou-Mandel interference between photons fromseparate sources .. 52 2.8.3 The Bell state measurement with linear optics .......... 53 3 Experimentalmethods 55 3.1 The GaAs and AlAs material system ............... 55 3.2 Molecular beam epitaxy ..................56 3.2.1 The Concept of molecular beam epitaxy ...........56 3.2.2 Layout and components of the III-V Omicron MBE ........58 3.2.3 Growth parameters .................. 59 3.2.4 Reflection high-energy electron diffraction (RHEED) ........ 60 3.2.5 Growth rate determination using RHEED oscillations .......61 3.3 Optical setups .....................63 4 Results 67 4.1 Growth of GaAs/AlGaAs quantum dots by in-situ Al droplet etching .....68 4.1.1 Motivation for the study of GaAs / AlGaAs quantum dots ......68 4.1.2 GaAs / AlGaAs quantum dot growth process ..........69 4.1.3 Interplay between growth parameters, quantumdot morphology and optical properties ................. 71 4.1.4 Nanohole morphology and quantumdot formation ........ 73 4.1.5 Optical characterization ................75 4.1.6 Deterministic wavelength control .............77 4.1.7 Photon coherence and radiative lifetime ...........84 4.1.8 Decoherence processes in semiconductor quantum dots ......86 4.1.9 Chamber conditioning and growth process optimization ......87 4.1.10 Arsenic flux calibration using the GaAs surface reconstruction ..... 88 4.1.11 Enhanced photon coherence after growth process adjustments ....92 4.2 Two-photon interference from frequency-stabilized GaAs/AlGaAs quantum dots .................94 4.2.1 Frequency tuning of semiconductor quantumdots ........95 4.2.2 Experimental setup .................. 95 4.2.3 Optical characterization of the separate GaAs/AlGaAs quantum dots ... 98 4.2.4 Faraday anomalous dispersion optical filter and frequency feedback ... 99 4.2.5 Two-photon interference between remote, frequency-stabilized quantum dots 100 4.3 Solid-state ensemble of highly entangled photon sources at rubidiumatomic transitions ........................102 4.3.1 Fine-structure splitting ................103 4.3.2 Resonant excitation of the biexciton state ...........105 4.3.3 Single photon purity and radiative lifetime ........... 107 4.3.4 Radiative lifetime of GaAs/AlGaAs quantumdots - comparison to other quantumdot types ...................108 4.3.5 Degree of entanglement ................109 4.3.6 Highly-efficient extraction of the obtained entangled photons ..... 116 5 Conclusions 119 5.1 Summary ....................... 119 5.2 Discussion and outlook ..................122 Bibliography 127 Publications and scientific presentations 150 Acknowledgments 154 Selbstständigkeitserklärung 157 Curriculum vitae 157

Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures grown along polar c-direction have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which decreases emission efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar) or no polarization (nonpolar) in the growth direction, has been a major area of research in the last few years. The correlation between structural, optical and transport properties of semipolar and nonpolar III-nitride would be extremely useful. The thesis focuses on the growth and characterizations of semipolar and nonpolar III-nitride heterostructures by plasma-assisted molecular beam epitaxy. Chapter 1 provides a brief introduction to the III-nitride semiconductors. The importance of semipolar and nonpolar III-nitride heterostructures over conventional polar heterostructures has been discussed. Chapter 2 deals with the descriptions of molecular beam epitaxy system and working principles of different characterization tools used in the present work. Chapter 3 addresses the molecular beam epitaxial growth of nonpolar (1 1 -2 0) and semipolar (1 1 -2 2) GaN on sapphire substrates. An in-plane orientation relationship is found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire for nonpolar GaN on r-sapphire substrates. Effect of growth temperature on structural, morphological and optical properties of nonpolar GaN has been studied. The growth temperature plays a major role in controlling crystal quality, morphology and emission properties of nonpolar a-plane GaN. The a-plane GaN shows crystalline anisotropy nature and it has reduced with increase in the growth temperature. The surface roughness was found to decrease with increase in growth temperature and film grown at 760°C shows reasonably smooth surface with roughness 3.05 nm. Room temperature photoluminescence spectra show near band emission peak at 3.434 -3.442 eV. The film grown at 800 ºC shows broad yellow luminescence peak at 2.2 eV. Low temperature photoluminescence spectra show near band emission at 3.483 eV along with defect related emissions. Raman spectra exhibit blue shift due to compressive strain in the film. An in-plane orientation relationship is found to be [1 -1 00] GaN || [1 2-1 0] sapphire and [-1 -1 2 3] GaN || [0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The surface morphology of semipolar GaN film is found to be reasonably smooth with pits on the surface. Room temperature photoluminescence shows the near band emission (NBE) at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E2 (high) peak position observed at 569.1 cm1. Chapter 4 deals with the fabrication and characterizations of Au/nonpolar and Au/semipolar GaN schottky diodes. The temperature-dependent current–voltage measurements have been used to determine the current mechanisms in Schottky diodes fabricated on nonpolar a-plane GaN and semipolar GaN epilayers. The barrier height (φb) and ideally factor (η) estimated from the thermionic emission model are found to be temperature dependent in nature indicate the deviations from the thermionic emission (TE) transport mechanism. Low temperature I-V characteristics of Au/ GaN Schottky diode show temperature independent tunnelling parameter. Barrier heights calculated from XPS are found to be 0.96 eV and 1.13 eV for Au/nonpolar GaN and Au/semipolar GaN respectively. Chapter 5 demonstrates the growth of InN on r-sapphire substrates with and without GaN buffer layer. InN film and nanostructures are grown on r-sapphire without GaN buffer layer and they are highly oriented along (0002) direction. The electron microscopy study confirms the nanostructures are vertically aligned and highly oriented along the (0001) direction. The Raman studies of InN nanostructures show the SO modes along with the other possible Raman modes. The band gap of InN nanostructures is found to be 0.82 eV. InN grown with a-plane GaN buffer shows nonpolar orientated growth. Growth temperature dependent studies of nonpolar a-plane InN epilayers are carried out. The valence band offset value is calculated to be 1.31 eV for nonpolar a-plane InN/GaN heterojunctions. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 1.41 eV. Chapter 6 deals with the temperature dependent I-V characteristics of the nonpolar a-plane (1 1 -2 0) InN/GaN heterostructures. The measured values of barrier height and ideality factor from the TE model show the temperature dependent variation. The double Gaussian distribution has mean barrier height values ( ϕb ) of 1.17 and 0.69 eV with standard deviation (σs ) of 0.17 and 0.098 V, respectively. The modified Richardson plot ln (Is/T2)-q2σ2/2k2T2 ) versus q/kT in the temperature range of 350 – 500 K, yielded the Richardson constant of 19.5 A/cm2 K2 which is very close to the theoretical value of 24 A/cm2 K2 for n-type GaN. The tunneling parameters E0 found to be temperature independent at low temperature range (150 –300 K). Chapter 7 concludes with the summary of present investigations and the scope for future work.

Nitrid hliníku (AlN) je slibný polovodivý materiál s velkou mezerou v pásu. Tenké filmy AlN nacházejí uplatnění v různých elektronických a optoelektronických zařízeních. V první řadě je cílem výzkumu prezentovaného v rámci této disertační práce představit nové prekurzory do procesu ALD pro depozici tenkých vrstev AlN. Navrhované prekurzory jsou lepší než tradiční prekurzory buď v nákladové efektivnosti nebo reaktivitě. Část disertační práce je věnována prohloubení porozumění chemickým procesům, které probíhají během a po depozici. V tomto ohledu bylo navrženo pracovní řešení ke zlepšení chemického složení výsledných filmů a ke zmírnění nedostatků, například oxidace. Dalším důležitým aspektem této studie je důkladná analýza fenoménu vodíku v tenkých vrstvách AlN ALD. Vodíkové nečistoty byly zkoumány pomocí přesných a pokročilých technik patřících do skupin analýzy iontovým paprskem (IBA).

We develop a theory of vectorial wave coupling in cubic photorefractive crystals placed in an alternating ac-field to enhance the nonlinear response. First we analytically and numerically investigate the dependences of the first Fourier harmonics of the space-charge field, induced in an AC-biased sillenite crystal by a light-interference pattern, on the light contrast m. The data obtained was used to extend the vectorial beam-coupling theory on the whole contrast region. In particular, we proved in the general case that despite of essential differences between thediffusion and AC nonlocal responses the later keeps the light interference fringes straight during the interaction. This fundamental feature allows, under certain restrictions, to reduce the nonlinear problem of vectorial coupling to the known linear problem of vectorial Bragg diffraction from a spatially uniform grating, which admits an exact solution. As a result, the nonlinear vectorial problem can be effectively solved for a number of practically important cases.The developed theory was applied to describe the transformation of a momentary phase changes of one of the input beams into the output intensity modulation (so-called grating translation technique). In contrast to the previous studies, we take into account the change of the space-charge field amplitude across the crystal (the coupling effects). The theory developed is employed to optimize the conditions for the linear signal detection under polarization filtering for the transverse and longitudinal optical configurations. We also analyze the possibility of the linear detection without polarization filtering.Illumination of AC-biased photorefractive BTO crystals with a coherent light beam results in development of strong nonlinear scattering. We investigate the angular and polarization characteristics of the scattered light for the diagonal optical configuration and different polarization states of the pump.

In der vorliegenden Arbeit werden die nichtlinearen optischen Eigenschaften der Materialien Lithiumniobat und Di-Zinn-Hexathiohypodiphosphat aufgrund der Suszeptibilität 3. Ordnung und kleiner Polaronen untersucht. Zudem wird gezeigt, dass die Interferenz verschiedenfarbiger Laserpulse die Aufzeichnung von statischen und dynamischen holographischen Gittern ermöglicht. Ein Teil dieser Arbeit ist in den im Anhang angegebenen 6 Publikationen bereits veröffentlicht. Lithiumniobat wird mit einer Erweiterung des Z-Scan Experiments untersucht, welches die Pulslängenabhängige Messung der nichtlinearen Absorption und der nichtlinearen Brechungsindexänderung ermöglicht. Dabei konnte festgestellt werden, dass bei sehr kurzen Pulslängen von 70 fs ein Effekt der Polaronen auf die nichtlineare Absorption vernachlässigbar ist und die Zwei-Photonen-Absorption die nichtlineare Absorption dominiert. Mit größerer Pulslänge gibt es allerdings Abweichungen zwischen der Theorie der Zwei-Photonen-Absorption und den Messergebnissen. Mit der Entwicklung eines Polaronen-Anregungs-Modells, welches eine polaronische Absorption aufgrund wiederholtem optisch induziertem Hopping annimmt, konnte dieser Effekt konsistent erklärt werden. Die Messungen der nichtlinearen Brechungsindexänderung lassen darauf schließen, dass sowohl freie Ladungsträger als auch kleine Polaronen neben der Suszeptibilität 3. Ordnung einen Einfluss auf die Brechungsindexänderung haben, da eine nichtlineare Abhängigkeit von der Intensität auch bei Pulslängen von 70 fs festgestellt werden konnte. Analog dazu konnte in Di-Zinn-Hexathiohypodiphosphat ein großer Zwei-Photonen-Absorptionskoeffizient festgestellt werden, welcher für Photonenenergien nahe der Bandkante Werte zeigt, die größer sind als theoretischen Überlegungen zeigen. Eine transiente Absorption nach optischer Anregung, gemessen durch ein Anreg-Abtast-Experiment, sowie Literatur legen nahe, dass in Di-Zinn-Hexathiohypodiphosphat gebundene Lochpolaronen durch optische Anregung entstehen können. Durch den hohen Zwei-Photonen-Absorptionskoeffizienten konnte das Aufzeichnen eines kontrastreichen, dynamischen Amplitudengitters mittels Femtosekundenpulsen gezeigt und nachgewiesen werden. Die Kürze der Femtosekundenpulse ermöglicht aber nicht nur das Aufzeichnen eines Zwei-Photonen-Absorptionsgitters aufgrund der hohen Intensitäten, sondern erlaubt zudem die Beobachtung von Interferenz zwischen verschiedenfarbigen Pulsen. In der Zeitspanne der Pulslänge beträgt die Bewegung der Interferenzstreifen, welche in der Größenordnung der Lichtgeschwindigkeit liegt, nur ein Bruchteil der Streifendistanz, sodass das Interferenzmuster eingefroren und beobachtbar erscheint. Somit lassen sich statische Hologramme in holographischen Filmen, wie auch dynamische Hologramme aufzeichnen. Über ein dynamisches holographisches Gitter mittels Zwei-Photonen-Absorption konnte so eine Frequenzkonversion durch Dopplerverschiebung in Lithiumniobat gezeigt werden.