Neste trabalho, cristais de TlBr foram crescidos e purificados pelo método de Bridgman Repetido, a partir de sais comerciais de TlBr, e caracterizados para serem usados como detectores de radiação à temperatura ambiente. Para avaliar a eficiência de purificação, estudos da diminuição da concentração de impurezas foram feitos após cada crescimento, analisando as impurezas traço por Espectrometria de Massas com Plasma (ICP-MS). Um decréscimo significativo da concentração de impurezas em função do número de purificações foi observado. Os cristais crescidos apresentaram boa qualidade cristalina de acordo com os resultados de análise por Difração de Raios X (DRX), boa qualidade morfológica e estequiometria adequada de acordo com os resultados de análise por MEV(SE) e MEV(EDS). Um modelo matemático definido por equações diferenciais foi desenvolvido para avaliar as concentrações de impurezas no cristal de TlBr e suas segregações em função do número de crescimentos pelo método de Bridgman. Este modelo pode ser usado para calcular o coeficiente de migração das impurezas e mostrou ser útil para prever o número necessário de repetições de crescimento Bridgman para atingir nível de pureza adequado para assegurar a qualidade do cristal como detector de radiação. Os coeficientes se segregação obtidos são parâmetros importantes para análise microestrutural e análise de transporte de cargas nos cristais detectores. Para avaliar os cristais a serem usados como detectores de radiação, medidas de suas resistividades e resposta à incidência de radiação gama das fontes de 241Am (59,5keV) e 133Ba (81 keV) foram realizadas. Essa resposta foi dependente da pureza do cristal. Os detectores apresentaram um avanço significativo na eficiência de coleta de cargas em função da pureza. / In this work, TlBr crystals have been purified and grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors, at room temperature. To evaluate the purification efficiency, studies on the impurity concentration decrease were performed after each growth, analysing the trace impurities by inductively coupled plasma mass.A mathematical model defined by differential equations was developed to evaluate the concentrations of impurities in TlBr crystal and their segregations along this crystalin function of the purification number.This model may be used to calculate the coefficient of impurities migration and it showed to be useful for predicting the number of purification stagesnecessary to achieve the suitable level for ensuring the crystal quality as a radiation detector.The segregation coefficients obtained are important parameters for the analysis of the microstructure and charge transport in detector semiconductor crystals.The grown crystals presented good crystalline quality according to the results of the x-ray diffraction analysis (XRD), good morphological quality and proper stoichiometry, in accordance with the results of SEM (SE) and SEM (EDS) analyses. To evaluate the crystals to be used as radiation detectors, measurements of resistivity and their response to the incidence of 241Am (59.5 keV) and 133Ba (81 keV) gamma radiation sources were performed. The quality of the response was dependent on the purity of the crystal. A significant improvement in the charge collection efficiency, in function of the crystal purity, was found.

Neste trabalho determinamos a estrutura dos níveis dos estados quase-ligados e virtuais em sistemas de poços quânticos acoplados de AlGaAs-GaAs na presença de um campo elétrico externo (Voltagem) perpendicular às camadas semicondutoras. As heteroestruturas de AlGaAs-GaAs são modeladas por um conjunto de poços quânticos de potencial unidimensionais. Utilizamos a aproximação de função envelope que reduz o problema à solução usual da Equação de Schroedinger de massa efetiva. Os níveis eletrônicos são então determinados utilizando a solução exata da Eq. de Schroedinger em termos das funções de Airy nos poços e barreiras e um formalismo de Matriz de Iteração com Análise de \"Phase-shift\". Nossos resultados estão em boa concordância com resultados experimentais de transições ópticas. Motivados pelas propriedades singulares dos sistemas de dupla barreira, investigamos o tunelamento ressonante de elétrons através de multi-barreiras e a formação de regiões de resistência negativa na curva característica de corrente X voltagem. Para os processos de tunelamento em multi-barreiras determinamos o Coeficiente de Transmissão, como função da energia do elétron incidente, usando o formalismo de Matriz de Iteração. Este método pode ser bastante útil na interpretação de resultados experimentais nestes dispositivos. Calculamos também a densidade de corrente de tunelamento versus a voltagem aplicada no caso de dupla barreira de modo a interpretar recentes resultados experimentais. / In this work the quasi-bound and virtual levels of both electrons and holes are determined in the case of coupled AlxGa1-xAs-GaAs quantum wells in the presence of an external electric (Voltage) perpendicular to the layers. The heterostructures field of AlxGa1-xAs-GaAs are mimicked by a set of unidimensional quantum well potentials. We employ the envelope function approximation and solve the usual effective mass Schrödinger Equation. The electronic levels are then determined by using the exact solution of Schrödinger Eq. in terms of Airy functions into the wells and barriers and an Iteraction Matrix formalism with the Phase-shift method. Our results are in a good agreement with the experimental results of optical measurements. Motivated by the unusual properties of double-barriers devices we investigated the resonant tunneling of electrons through multi-barriers. The transmission Coefficient as a function of energy of the incident electron is determined by using an Interaction Matrix formalism. This method can be very useful in the interpretation of experimental results in semiconductor devices. We also calculate the tunneling current density as a function of applied voltage in the case of a double-barrier in order to interpret recent experimental results.

Neste trabalho, cristais de TlBr foram crescidos e purificados pelo método de Bridgman Repetido, a partir de sais comerciais de TlBr, e caracterizados para serem usados como detectores de radiação à temperatura ambiente. Para avaliar a eficiência de purificação, estudos da diminuição da concentração de impurezas foram feitos após cada crescimento, analisando as impurezas traço por Espectrometria de Massas com Plasma (ICP-MS). Um decréscimo significativo da concentração de impurezas em função do número de purificações foi observado. Os cristais crescidos apresentaram boa qualidade cristalina de acordo com os resultados de análise por Difração de Raios X (DRX), boa qualidade morfológica e estequiometria adequada de acordo com os resultados de análise por MEV(SE) e MEV(EDS). Um modelo matemático definido por equações diferenciais foi desenvolvido para avaliar as concentrações de impurezas no cristal de TlBr e suas segregações em função do número de crescimentos pelo método de Bridgman. Este modelo pode ser usado para calcular o coeficiente de migração das impurezas e mostrou ser útil para prever o número necessário de repetições de crescimento Bridgman para atingir nível de pureza adequado para assegurar a qualidade do cristal como detector de radiação. Os coeficientes se segregação obtidos são parâmetros importantes para análise microestrutural e análise de transporte de cargas nos cristais detectores. Para avaliar os cristais a serem usados como detectores de radiação, medidas de suas resistividades e resposta à incidência de radiação gama das fontes de 241Am (59,5keV) e 133Ba (81 keV) foram realizadas. Essa resposta foi dependente da pureza do cristal. Os detectores apresentaram um avanço significativo na eficiência de coleta de cargas em função da pureza. / In this work, TlBr crystals have been purified and grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors, at room temperature. To evaluate the purification efficiency, studies on the impurity concentration decrease were performed after each growth, analysing the trace impurities by inductively coupled plasma mass.A mathematical model defined by differential equations was developed to evaluate the concentrations of impurities in TlBr crystal and their segregations along this crystalin function of the purification number.This model may be used to calculate the coefficient of impurities migration and it showed to be useful for predicting the number of purification stagesnecessary to achieve the suitable level for ensuring the crystal quality as a radiation detector.The segregation coefficients obtained are important parameters for the analysis of the microstructure and charge transport in detector semiconductor crystals.The grown crystals presented good crystalline quality according to the results of the x-ray diffraction analysis (XRD), good morphological quality and proper stoichiometry, in accordance with the results of SEM (SE) and SEM (EDS) analyses. To evaluate the crystals to be used as radiation detectors, measurements of resistivity and their response to the incidence of 241Am (59.5 keV) and 133Ba (81 keV) gamma radiation sources were performed. The quality of the response was dependent on the purity of the crystal. A significant improvement in the charge collection efficiency, in function of the crystal purity, was found.

[Truncated abstract] Infrared (IR) detectors have many applications across a wide range of industries. HgCdTe is the leading semiconductor material for fabrication of high-performance IR detectors due to a number of superior fundamental material properties. However, significant technological challenges are involved in working with this narrow bandgap material, primarily due to its low damage threshold. Exposure of HgCdTe to H2/CH4/Ar plasma in IR detector fabrication processes is known to generally cause modifications to the electrical properties of the material, specifically including p-to-n type conductivity conversion. This is an undesirable side-effect when aiming to perform physical etching for device delineation. However, it has previously been exploited as a novel means of planar n-on-p junction formation for high-performance HgCdTe photodiode fabrication. This technique offers significant advantages over established junction formation techniques such as ion implantation and ion beam milling. These include not requiring a postimplant anneal to activate dopants and repair ion-induced damage, and not necessitating reapplication of the passivation layer after junction formation. Previous work has demonstrated high-performance photodiodes based on H2/CH4 plasmainduced junction formation using a parallel-plate reactive ion etching (RIE) tool. The newer hybrid inductively coupled plasma (ICP) RIE technology is capable of greater control of the plasma condition, and therefore potentially greater control of the plasma-induced type conversion process. ... Differential profiling has been performed using wet chemical etch-backs between measurements to investigate the depth profiles of the carrier species. This investigation has revealed that the ICPRIE-induced type conversion depth is most sensitive to the sample temperature during exposure. The other ICPRIE process parameters, including the process pressure, RIE power, and ICP power, have also been shown to affect the type conversion depth and the electron concentration and mobility in the type converted layer. Based on this carrier transport characterisation work, a set of ICPRIE process conditions was identified as being suitable for formation of n-on-p junctions for high-performance photodiode fabrication. Three sets of photodiodes have been fabricated and characterised. The ICPRIE process parameters for junction formation were refined based on the parametric study of the carrier transport properties. The performance of photodiodes from each sample was measured to improve with each set of variations to the conditions for ICPRIE-induced junction formation, based on performance characterisation by current-voltage and noise measurements. Dynamic resistance area products up to 2.5 × 106 O.cm2 at 77K were measured for these mid-wave (MW) IR photodiodes (cutoff wavelength 5.3 µm), which is equivalent to the best reported results in the literature for devices based on established fabrication techniques. Gated photodiode structures were used to demonstrate that surface passivation is the performance-limiting factor for these photodiodes. This indicates not only that the set of ICPRIE conditions developed in this work to date is suitable for producing high-performance photodiodes, but that there is also potential for further improvement.

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Organic and inorganic/organic hybrid material development is essential for the advancement of electronic devices, such as organic light emitting diodes (OLEDs), organic thin film transistors (OTFTs) and fuel cells. These materials are superior to their inorganic counterparts due to the ability to create flexible devices that can be produced on a large scale and at relatively low cost. First, electron-transport materials (n-type semiconductors) are severely lacking for the development of sufficient OTFTs. Metal-interrupted perylene analogues have been developed, in part, to take advantage of the ability to tune the electronic properties of these complexes by simply changing the metal center. Second, fluorescent molecules play an essential role in expansion of microscale sensor systems and OLEDs. Solvent dependent triple fluorescence has been discovered for a series of isobutylnaphthalimide derivatives, which is unique for naphthalimide materials which typically demonstrate dual fluorescence. Next, oxygen reduction electrocatalysts in fuel cells have hindered commercialization due to the high price of platinum. Here, polymer-containing palladium nanoparticles utilize the metal center embedded directly in the polymer backbone to serve as a seed point for metal nanoparticle growth. The palladium nanoparticles within the polymer matrix display significant catalytic activity towards oxygen reduction. Also, poly-9,9-dioctylfluorene is at the forefront of blue-light emitting materials for OLEDs due to high quantum efficiencies and good thermal stability; however, a low-energy green band emission contaminant in devices has hindered application. Oligofluorene synthesis to understand this phenomenon can be difficult thus a boronic acid protection has been implemented before Suzuki-Miyaura coupling occurs to reduce the number of byproducts produced and to accomplish synthesis of oligofluorenes such as a pentamer and heptamer. Lastly, while deviating from organic and inorganic/organic electronic materials, a discussion on the development of a mononuclear Rh(II) complexes, specifically a piano-stool conformation which assists in isolation of this species. The piano-stool ligand structure consists of alkyl chains for easy conformational adjustments when the Rh(I) metal center undergoes oxidation, bulky phosphine groups and an electron-donating arene ring to keep the Rh(II) metal center from dimerization. Most importantly, the research conducted has strived toward advancements over a broad range of scientific investigation. / text

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