Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. Surface passivation is an effective method to combat this and can be done either by suppressing traps (lowering trap density) or by forming an electric field, preventing the carriers from reaching the defect states. Silicon oxide, SiO2, and aluminum oxide, Al2O3, are two materials which have previously been shown to provide good passivating qualities. In this thesis, SiO2 and Al2O3 have been used both as single layers and in a stack configuration to passivate the surface of crystalline silicon (c-Si). Using a response surface methodology approach, temperature optimization with respect to deposition and annealing temperature has been conducted for SiO2/Al2O3 stacks deposited with plasma-enhanced atomic layer deposition, PEALD. It was shown that the same deposition temperature (Tdeposition = 140 °C, Tanneal = 395 °C) could be used for both materials and provide good passivation with an effective surface recombination velocity, Seff, of 5.3 cm/s (1Ωcm n-type Si wafers). From FTIR measurements, an increase in hydroxyl groups was seen as the SiO2 deposition temperature increased while the opposite was observed for Al2O3 which also showed fewer carbon related impurities with increasing temperature. Increasing the SiO2 temperature strongly affected the fixed charge density, causing it to decrease and even switch polarity. The fixed charge density could also be controlled by varying the thickness of the intermediate SiO2 layer. At a thickness of 1-2 nm, a minimum in the effective lifetime was observed and was correlated to Si close to flat-band conditions. N-type wafers showed a larger negative fixed charge density than p-type wafers which results in stronger field-effect passivation. For phosphorous doped emitters (200 Ω/sq on 10 Ωcm p-type wafer), it was seen that SiO2/Al2O3 stacks with a SiNx anti-reflection coating performed better than SiO2 or Al2O3 single layers. By depositing SiO2 at 130 °C in SiO2/Al2O3 stacks and annealing at 450 °C, an implied open circuit voltage (iVoc) of 710 mV was measured (AM1.5G) together with an implied fill factor (iFF) of 84.1% and a recombination parameter (J0) of 19.2 fA/cm2. Al2O3 single layer showed an extremely low J0 of 10 fA/cm2 but suffered from a decreased iFF and strong injection dependent lifetimes which originates from an inversion layer. ALD ozone processes were successfully developed for SiO2 and Al2O3.  The deposition rate per cycle for SiO2 was found to be only ~0.175 Ǻ/cycle (PEALD ~1.1 Ǻ/cycle), making it rather unpractical for use outside of research. Single layer SiO2 deposited with ozone showed, similarly to a plasma process, almost no surface passivation. Al2O3 however proved to be highly passivating on its own with a τeff = 3.8 ms, Seff = 1.2 cm/s (1 Ωcm n-type) after depositing at 250 °C. Studies on the effect of annealing showed that an annealing temperature of 450 °C is necessary to completely activate the passivation. The low Seff values were attributed to a very high negative fixed charge density ~1013 cm-2 together with strong chemical passivation.

<p>The principles of dye-sensitized solar cells were studied and are outlined in this thesis. An overview of the basic steps needed to create a DSC isfollowed by detailed experimental information on how to assemble the solar cells that were fabricated in this project. They were based on synthesizednanocrystalline ZnO thin films sensitized by chlorophyll a as well as isolated photopigments from spinach leaves. The nanocrystals werestudied using XRD, and it was confirmed that three different methods of synthesis resulted in ZnO crystals of a few nanometers. The solar cellswere assembled with Au electrodes in a sandwich configuration and their photovoltaic properties were measured. Overall light-to-electricity conversionwas low with the highest efficiency being 0.21 %. An astonishingly low efficiency of 0.0003 % was noted for a thin film which was not thermallytreated, and it is suggested that heat-treatment is of great importance. It was also found that photopigments from spinach can be extractedeasily and used as molecular sensitizer without any demanding purification steps.</p>

Ink-jet printing offers an ideal answer to the emerging trends and demands of depositing at ambient temperatures picoliter droplets of oxide solutions into functional thin films and device components with a high degree of pixel precision. It is a direct single-step mask-free patterning technique that enables multi-layer and 3D patterning. This method is fast, simple, easily scalable, precise, inexpensive and cost effective compared to any of other methods available for the realization of the promise of flexible, and/or stretchable electronics of the future on virtually any type of substrate. Because low temperatures are used and no aggressive chemicals are required for ink preparation, ink-jet technique is compatible with a very broad range of functional materials like polymers, proteins and even live cells, which can be used to fabricate inorganic/organic/bio hybrids, bio-sensors and lab-on-chip architectures. After a discussion of the essentials of ink-jet technology, this thesis focuses particularly on the art of designing long term stable inks for fabricating thin films and devices especially oxide functional components for electronics, solar energy conversion, opto-electronics and spintronics. We have investigated three classes of inks: nanoparticle suspension based, surface modified nanoparticles based, and direct precursor solution based. Examples of the films produced using these inks and their functional properties are: 1) In order to obtain magnetite nanoparticles with high magnetic moment and narrow size distribution in suspensions for medical diagnostics, we have developed a rapid mixing technique and produced nanoparticles with moments close to theoretical values (APL 2011 and Nanotechnology 2012). The suspensions produced have been tailored to be stable over a long period of time. 2)In order to design photonic band gaps, suspensions of spherical SiO2 particles were produced by chemical hydrolysis (JAP 2010 and JNP 2011 - not discussed in the thesis). 3) Using suspension inks, (ZnO)1-x(TiO2)x composite films have been printed and used to fabricate dye sensitized solar cells (JMR 2012). The thickness and the composition of the films can be easily tailored in the inkjet printing process. Consequently, the solar cell performance is optimized. We find that adding Ag nanoparticles improves the ‘metal-bridge’ between the TiO2 grains while maintaining the desired porous structure in the films. The photoluminescence spectra show that adding Ag reduces the emission intensity by a factor of two. This indicates that Ag atoms act as traps to capture electrons and inhibit recombination of electron-hole pairs, which is desirable for photo-voltaic applications. 4) To obtain and study room temperature contamination free ferromagnetic spintronic materials, defect induced and Fe doped MgO and ZnO were synthesized ‘in-situ’ by precursor solution technique (preprints). It is found that the origin of magnetism in these materials (APL 2012 and MRS 2012) is intrinsic and probably due to charge transfer hole doping. 5) ITO thin films were fabricated via inkjet printing directly from liquid precursors. The films are highly transparent (transparency &gt;90% both in the visible and IR range, which is rather unique as compared to any other film growth technique) and conductive (resistivity can be ~0.03 Ω•cm). The films have nano-porous structure, which is an added bonus from ink jetting that makes such films applicable for a broad range of applications. One example is in implantable biomedical components and lab-on-chip architectures where high transparency of the well conductive ITO electrodes makes them easily compatible with the use of quantum dots and fluorescent dyes. In summary, the inkjet patterning technique is incredibly versatile and applicable for a multitude of metal and oxide deposition and patterning. Especially in the case of using acetate solutions as inks (a method demonstrated for the first time by our group), the oxide films can be prepared ‘in-situ’ by direct patterning on the substrate without any prior synthesis stages, and the fabricated films are stoichiometric, uniform and smooth. This technique will most certainly continue to be a versatile tool in industrial manufacturing processes for material deposition in the future, as well as a unique fabrication tool for tailorable functional components and devices. / <p>QC 20120907</p>

The work presented in this thesis concerns surface energy modification and patterning of the surfaces of conjugated polymers. Goniometry and Wilhelmy Balance techniques were used to evaluate the surface energy or wettability of a polymer’s surface; infrared reflectionabsorption spectroscopy (IRAS) was used to analyse the residuals on the surface as modified by a bare elastomeric stamp poly(dimethylsiloxane) (PDMS). The stamp was found to be capable of modifying a polymer surface. Patterning of a single and/or double layer of conjugated polymers on the surface can be achieved by surface energy controlled dewetting. Modification of a conjugated polymer film can also be carried out when a sample is subjected to electrochemical doping in an aqueous electrolyte. The dynamic surface energy changes during the process were monitored in-situ using the Wilhelmy balance method. This thesis also concerns studies of conjugated polymer-based optoelectronics, including light-emitting diodes (PLEDs), that generate light by injecting charge into the active polymer layer, and solar cells (PSCs), that create electrical power by absorbing and then converting solar photons into electron/hole pairs. A phosphorescent metal complex was doped into polythiophene to fabricate PLEDs. The energy transfer from the host polymer to the guest phosphorescent metal (iridium and platinum) complex was studied using photoluminescence and electroluminescence measurements performed at room temperature and at liquid nitrogen temperature. PSCs were prepared using low-bandgap polyfluorene copolymers as an electron donor blended with several fullerene derivatives acting as electron acceptors. Energetic match is the main issue affecting efficient charge transfer at the interface between the polymers and the fullerene derivatives, and therefore the performance of the PSCs. Photoluminescence, luminescence quenching and the lowest unoccupied molecular orbital (LUMO) together with the highest occupied molecular orbital (HOMO) of the active materials in the devices were studied. A newly synthesized fullerene, that could match the low-bandgap polymers, was selected and used as electron acceptor in the PSCs. Photovoltaic properties of these PSCs were characterised, demonstrating one of the most efficient polymer:fullerene SCs that generate photocurrent at 1 μm. / On the day of the defence the status of article number III was Manuscript and article VII was Accepted.

Organic solar cells (OSC) are interesting as low cost alternative to conventional solar cells. Unsubstituted Metal-phthalocyanines (Pc) are excellent electron donating molecules for heterojunction OSC. Usually organic solar cells with Pcs are produced by vapor deposition, although solution based deposition (like spin casting) is cheaper and offers more possibilities to control the structure of the film. With solution based deposition several parameters (like temperature, solvent and etc.) affect the self-organized structure formation via nucleation and growth. The reason why vapor deposition is typically used is the poor solubility of the metal-phthalocyanines in most common solvents. Furthermore the process of nucleation and growth of Pc aggregates from solution is not well understood. For preparation of Pc films from solution, it is necessary to find the appropriate solvents, assess the solution deposition techniques, such as dip coating, and spin casting. It is necessary to understand the nucleation and growth process for aggregation/precipitation and to use this knowledge to produce nanostructures appropriate for OSC. This is important because the nanostructure of the films determines their performance. In this thesis, optical absorption and the stability of 8 different unsubstituted metal Pc’s were studied quantitatively in 28 different solvents. Among the several solution based deposited thin films produced based on this study, copper phthalocyanine (CuPc) dissolved in trifluoroacetic acid (TFA) is chosen as a model system for an in-depth study. CuPc has sufficient solubility and stability in TFA and upon solution processing forms appropriate structures for OSCs. CuPc molecules aggregate into layers of nanoribbons with a thickness of ~ 1 nm and an adjustable width and length. The morphology and the number of deposited layers in the thin films are controlled by different parameters, like temperature and solution concentration. Material properties of CuPc deposited from TFA are studied in detail via x-ray diffraction, UV-Vis and FT-IR spectroscopy. Atomic force microscopy was used to study the morphology of the dried film. The mechanism of the formation of CuPc nanoribbons from spin casted CuPc/TFA solution in ambient temperature is investigated and explained. The parameters (e.g. solution concentration profile) governing nucleation and growth are calculated based on the spin casting theory of a binary mixture of a nonvolatile solute and evaporative solvent. Based on this and intermolecular interactions between CuPc and substrate a nucleation and growth model is developed explaining the aggregation of CuPc in a supersaturated TFA solution. Finally, a solution processed thin film of CuPc is applied as a donor layer in a functioning bilayer heterojunction OSC and the influence of the structure on OSC performance is studied. / In den vergangenen Jahren wurden kosteneffiziente nasschemische Beschichtungsverfahren für die Herstellung organischer Dünnfilme für verschiedene opto-elektronische Anwendungen entdeckt und weiterentwickelt. Unter anderem wurden Phthalocyanin-Moleküle in photoaktiven Schichten für die Herstellung von Solarzellen intensiv erforscht. Aufgrund der kleinen bzw. unbekannten Löslichkeit wurden Phthalocyanin-Schichten durch Aufdampfverfahren im Vakuum hergestellt. Des Weiteren wurde die Löslichkeit durch chemische Synthese erhöht, was aber die Eigenschaften von Pc beeinträchtigte. In dieser Arbeit wurde die Löslichkeit, optische Absorption und Stabilität von 8 verschiedenen unsubstituierten Metall-Phthalocyaninen in 28 verschiedenen Lösungsmitteln quantitativ gemessen. Wegen ausreichender Löslichkeit, Stabilität und Anwendbarkeit in organischen Solarzellen wurde Kupferphthalocyanin (CuPc) in Trifluoressigsäure (TFA) für weitere Untersuchungen ausgewählt. Durch die Rotationsbeschichtung von CuPc aus TFA Lösung wurde ein dünner Film aus der verdampfenden Lösung auf dem Substrat platziert. Nach dem Verdampfen des Lösungsmittels, die Nanobändern aus CuPc bedecken das Substrat. Die Nanobänder haben eine Dicke von etwa ~ 1 nm (typische Dimension eines CuPc-Molekül) und variierender Breite und Länge, je nach Menge des Materials. Solche Nanobändern können durch Rotationsbeschichtung oder auch durch andere Nassbeschichtungsverfahren, wie Tauchbeschichtung, erzeugt werden. Ähnliche Fibrillen-Strukturen entstehen durch Nassbeschichtung von anderen Metall-Phthalocyaninen, wie Eisen- und Magnesium-Phthalocyanin, aus TFA-Lösung sowie auf anderen Substraten, wie Glas oder Indium Zinnoxid. Materialeigenschaften von aufgebrachten CuPc aus TFA Lösung und CuPc in der Lösung wurden ausführlich mit Röntgenbeugung, Spektroskopie- und Mikroskopie Methoden untersucht. Es wird gezeigt, dass die Nanobänder nicht in der Lösung, sondern durch Verdampfen des Lösungsmittels und der Übersättigung der Lösung entstehen. Die Rasterkraftmikroskopie wurde dazu verwendet, um die Morphologie des getrockneten Films bei unterschiedlicher Konzentration zu studieren. Der Mechanismus der Entstehung der Nanobändern wurde im Detail studiert. Gemäß der Keimbildung und Wachstumstheorie wurde die Entstehung der CuPc Nanobänder aus einer übersättigt Lösung diskutiert. Die Form der Nanobändern wurde unter Berücksichtigung der Wechselwirkung zwischen den Molekülen und dem Substrat diskutiert. Die nassverarbeitete CuPc-Dünnschicht wurde als Donorschicht in organischen Doppelschicht Solarzellen mit C60-Molekül, als Akzeptor eingesetzt. Die Effizienz der Energieumwandlung einer solchen Zelle wurde entsprechend den Schichtdicken der CuPc Schicht untersucht.

<p>When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon. In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity. The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped. A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.<br /> &nbsp / </p>

High efficiency multi-junction (MJ) solar cells were packaged onto receiver systems. The efficiency change of concentrator cells under continuous high intensity illumination was done. Also, assessment of the receiver design on the overall performance of a Fresnel-type concentration system was investigated. We present on receiver designs including simulation results of their three-dimensional thermal operation and experimental results of tested packaged receivers to understand their efficiency in real world operation. Thermal measurements from solar simulators were obtained and used to calibrate the model in simulations. The best tested efficiency of 36.5% is obtained on a sample A receiver under 260 suns concentration by the XT-30 solar simulator and the corresponding cell operating temperature is ~30.5°C. The optimum copper thickness of a 5 cm by 5 cm simulated alumina receiver design was determined to be 6 mm and the corresponding cell temperature under 1000 suns concentration is ~36°C during operation.

In this study, we investigated the effect of electrolyte composition, photoanode thickness, and the additions of GuSCN (guanidinium thiocyanate), NMB (N-methylbenimidazole), and SiO2 on the photovoltaic performance of DSSCs (dye sensitized solar cells). A bifacial DSSC is realized and irradiated from front and rear sides. The devices give maximum photovoltaic efficiencies for 70% PMII (1-propyl 3-ethylimidazoliumiodide)/30%(EMIB(CN)4)(1-ethyl-3-methyl-imidazolium tetracyano borate) electrolyte composition and 10 &mu / m thick photoanode coating which is considered to be the ideal coating thickness for the diffusion length of electrolyte and dye absorption. A significant increase in the photocurrent for DSSCs with optimum molarity of 0.1 M GuSCN was observed due to decreased recombination which is believed to be surface passivation effect at photoanode electrolyte interface suppressing recombination rate. Moreover, optimum NMB molarity was found to be 0.4 for maximum efficiency. Addition of SiO2 to the electrolyte both as an overlayer and dispersed particles enhanced rear side illuminated cells where dispersed particles are found to be more efficient for the front side illuminated cells due to additional electron transport properties. Best rear side illuminated cell efficiency was 3.2% compared to front side illuminated cell efficiency of 4.2% which is a promising result for future rear side dye sensitized solar cell applications where front side illumination is not possible like tandem structures and for cells working from both front and rear side illuminations.

In this thesis study, fabrication and doping of silicon thin films prepared by electron beam evaporation equipped with effusion cells for solar cell applications have been investigated. Thin film amorphous Si (a-Si) layers have been fabricated by the electron beam evaporator and simultaneously doped with boron (B) and phosphorous (P) using effusion cells. Samples were prepared on glass substrates for the future solar cell operations. Following the deposition of a-Si thin film, crystallization of the films has been carried out. Solid Phase Crystallization (SPC) and Metal Induced Crystallization (MIC) have been employed to obtain thin film crystalline Si. Crystallization was performed in a conventional tube furnaces and Rapid Thermal annealing systems (RTA) as a function of process parameters such as annealing temperature and duration. Produced films have been characterized using chemical and structural characterization techniques such as Raman Spectroscopy, X-Ray Diffractometer and Secondary Ion Mass Spectrometer (SIMS). The electrical properties of the films have been studied using Hall Effect and I-V measurements as a function of doping. We have demonstrated successful crystallization of a-Si by SPC at temperatures above 600 &deg / C. The crystallization occurred at lower temperatures in the case of MIC. For doping, P was evaporated from the effusion cell at a temperature between 600 &deg / C and 800 &deg / C. For B, the evaporation temperature was 1700 &deg / C and 1900 &deg / C. The thickness and the band gap of the Si films were determined by ellipsometry method and the results were compared for different evaporation temperatures. The effect of doping was monitored by the I-V and Hall Effect measurements. We have seen that the doping was accomplished in most of the cases. For the samples annealed at relatively high temperatures, the measured doping type was inconsistent with the expected results. This was attributed to the contamination from the glass substrate. To understand the origin of this contamination, we analyzed the chemical structure of the film and glass by X-ray Fluorescence (XRF) and seen that the glass is the main source of contamination. In order to prevent this contamination we have suggested covering the glass substrate with Si3N4 (Silicon Nitride) which act as a good diffusion barrier for impurities.

High efficiency multi-junction (MJ) solar cells were packaged onto receiver systems. The efficiency change of concentrator cells under continuous high intensity illumination was done. Also, assessment of the receiver design on the overall performance of a Fresnel-type concentration system was investigated. We present on receiver designs including simulation results of their three-dimensional thermal operation and experimental results of tested packaged receivers to understand their efficiency in real world operation. Thermal measurements from solar simulators were obtained and used to calibrate the model in simulations. The best tested efficiency of 36.5% is obtained on a sample A receiver under 260 suns concentration by the XT-30 solar simulator and the corresponding cell operating temperature is ~30.5°C. The optimum copper thickness of a 5 cm by 5 cm simulated alumina receiver design was determined to be 6 mm and the corresponding cell temperature under 1000 suns concentration is ~36°C during operation.