Electrohydrodynamics (EHD) is a promising research field with several trending applications. Even though the phenomenon was first observed centuries ago, there is very little research until the middle 20th century, as the mechanisms behind it were very poorly understood. To this date, the majority of research is based on the development of empirical models and the presentation of laboratory experiments. This work begins with an extensive literature review on the phenomenon, clarifying conflicts between researchers throughout the history and listing the findings of the latest research. The literature review reveals that there are very few mathematical models describing even the most important parameters of the EHD fluid flow and most are either empirical or greatly simplified. As such, practical mathematical models for the assessment of all primary performance characteristics describing EHD fluid accelerators (Voltage Potential, Electric Field Intensity, Corona Discharge Current and Fluid Velocity) were developed and are begin presented in this work. These cover all configurations where the emitter faces a plane or another identical electrode and has a cylindrical surface. For configurations where the emitter faces a plane or another identical electrode and has a spherical surface, Corona Discharge Current and Fluid Velocity models have been presented as well. Laboratory experiments and computer simulations were performed and are being thoroughly presented in Chapter 4, verifying the accuracy and usability of the developed mathematical models. The laboratory experiments were performed using two of the most popular EHD electrode configurations - wire-plane and needle-grid. Finally, the findings of this research are being summarized in the conclusion, alongside with suggestions for future research. The step-by-step development of the equipotential lines mathematical model is presented in Appendix A. Appendix B covers the mathematical proof that the proposed field lines model is accurate and that the arcs are perpendicular to the surface of the electrodes and to all of the equipotential lines.

abstract: Inductors are fundamental components that do not scale well. Their physical limitations to scalability along with their inherent losses make them the main obstacle in achieving monolithic system-on-chip platform (SoCP). For past decades researchers focused on integrating magnetic materials into on-chip inductors in the quest of achieving high inductance density and quality factor (QF). The state of the art on-chip inductor is made of an enclosed magnetic thin-film around the current carrying wire for maximum flux amplification. Though the integration of magnetic materials results in enhanced inductor characteristics, this approach has its own challenges and limitations especially in power applications. The current-induced magnetic field (HDC) drives the magnetic film into its saturation state. At saturation, inductance and QF drop to that of air-core inductors, eliminating the benefits of integrating magnetic materials. Increasing the current carrying capability without substantially sacrificing benefits brought on by the magnetic material is an open challenge in power applications. Researchers continue to address this challenge along with the continuous improvement in inductance and QF for RF and power applications. In this work on-chip inductors incorporating magnetic Co-4%Zr-4%Ta -8%B thin films were fabricated and their characteristics were examined under the influence of an externally applied DC magnetic field. It is well established that spins in magnetic materials tend to align themselves in the same direction as the applied field. The resistance of the inductor resulting from the ferromagnetic film can be changed by manipulating the orientation of magnetization. A reduction in resistance should lead to decreases in losses and an enhancement in the QF. The effect of externally applied DC magnetic field along the easy and hard axes was thoroughly investigated. Depending on the strength and orientation of the externally applied field significant improvements in QF response were gained at the expense of a relative reduction in inductance. Characteristics of magnetic-based inductors degrade with current-induced stress. It was found that applying an externally low DC magnetic field across the on-chip inductor prevents the degradation in inductance and QF responses. Examining the effect of DC magnetic field on current carrying capability under low temperature is suggested. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2014

This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN HFETs in the past have been high material defect density and non-optimized fabrication technologies which gives rise to bu er leakage and surface leakage, respectively. In this thesis, mesa isolation, ohmic and gate metal contacts, and passivation techniques, have been discussed to improve the performance of these power transistors in terms of low contact resistance and low gate leakage. The relationship between breakdown voltage and Rds(ON)A with respect to the gate-drain length (Lgd) is also discussed. First, unit cell devices were designed (two-fingered cells with Wg = 100, 300, 400 m) and characterized, and then they were extended to form large area devices (upto Wg = 40 mm). The design goals were classied into three parts: - High Breakdown Voltage: This was achieved by designing devices with variations in Lgd, - Low turn-on resistance: This was achieved by optimizing the annealing temperatures as well as incorporating additional thick metal pads, as well as optimizing the passivation etch recipe, - Low Gate Leakage: The gate leakage was reduced signicantly by using a gate metal with a larger barrier height. All devices with Lgd larger than 10 m exhibited excellent breakdown voltage characteristics of over 800 V, and it progressed as the Lgd increased. The turn-on resistance was also reduced signicantly below 20 m-cm2, for devices with Lgd = 15, 25, and 20 m. The gate leakage was measured for all devices upto 200 V, and was in the range of 10-100 nA, which is one of the best values reported for multi-ngered devices with Lgd in the range of 2.4-5 mm. Some of the key challenges faced in fabrication were determining a better gate metal layer to reduce gate leakage, optimizing the passivation via etch recipe, and reducing surface leakage.

Current transformers and current sensors are devices which are mostly used for current measurement in high voltage systems. These devices transform measured currents to range which are workable for measurement and protection devices. Theoretical part includes from third to seventh chapter. These chapters contain construction analysis and characteristic points for both device and problems of protecting the transformer with differential protection. Practical part includes from eighth to tenth chapter. This chapter consists results from laboratory measurement. Results are used for verification with theoretical part of the thesis. Conclusion of this thesis comparing properties and summarises results from laboratory measurement.

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