Graduated: June, 2002 Student: Hu, Shen Sheng Academic Degree: Master thesis Advisor: G. Gary Hu Abstract: The semiconductors products are the key components for electronics industry. The applications covered the wide field of 3C(Computer, Communication, Consumer) electronics products. The suppliers are the manufacturers of CPU, MPU, Chip set, Logic IC, Linear IC, etc. The customers are the manufacturers of 3C electronics products. The Distributors of Semiconductor are not only sales components or import-export business, but also provide the professional value-added service for suppliers and customers. They are important bridge for the suppliers and customers in the worldwide semiconductors supply chain. They perform a key role in the electronics industry. Taiwan has the competitive advantage in the hardware of information industry such as low cost and high quality. The worldwide manufacturers consider the production cost and the price competitive. They would like to reinforce the strategic alliance relationship with Taiwan. In this trend, the customer of 3C product manufacturers want to reduce their stock risk and production cost. The customer will not buy from the original component manufacturers directly. They will choose the distributors which can provide low cost, fast delivery, design support, FAE support, good quality, e-process, overseas support, etc. The distributors should develop to differentiation business mode in the future. Provide the value-added service for the supply chain in the electronics industry field. The strategic development of Marketing Channels for Semiconductor Components in Taiwan is shown as below: 1. Build and extend core capabilities. 2. Construct a worldwide distributors network. 3. Continuing expend the economic scale. 4. Provide the total-solution for customers. 5. Search for new products and new applications.

Ce travail présente le développement d’un banc de mesure thermique, pour la mesure : de réseaux I (V), d’impédance basse fréquence et de bruit basse fréquence des composants semi-conducteurs. Le banc de mesure de bruit BF est composé d’un amplificateur de tension faible bruit, d’un amplificateur transimpédance, d’un analyseur FFT et d’un support thermique. Ce banc a permis d’extraire les sources de bruit en courants équivalentes aux accès du transistor pour différentes densités de courant et à différentes températures. Dans le but de calculer l’énergie d’activation et la section de capture des pièges grâce à la localisation des fréquences de coupures de bruit GR dans la technologie du TBH InGaP/GaAs. Dans un deuxième temps, nous avons étudié le bruit basse fréquence dans le transistor InGaP/GaAs et les jonctions base émetteur, base collecteur et la résistance TLM par le moyen de simulation physique et de mesure de densité spectrale de puissance de bruit basse fréquence. Grâce à ces mesures, nous avons pu extraire les sources de bruit internes locales commandées et non commandées. Cette extraction nous a permis de calculer les énergies d’activations, les sections de capture et de valider la simulation physique. / This work presents the development of a thermal test bench for I(V) characteristics, for low frequency impedance and for low frequency noise of semiconductor components. This thermal bench for low frequency noise measurement is composed of a low-noise voltage amplifier, a low-noise transimpedance amplifier, an FFT vector signal analyzer and a thermal chuck. This measurement bench has allowed to extract the current noise sources equivalent to the access transistor at different current densities and at different temperatures. In order to calculate the activation energy and the capture cross section of traps thanks to the localization of the cutoff frequency of GR noise in HBT InGaP / GaAs technology. Secondly, we studied the low frequency noise in the transistor InGaP / GaAs and the differents junctions: emitter base, collector base and the base represented by the TLM resistance using physical simulations and measurements of low-frequency noise power spectrum density. Using this measurements, we extract the controlled and not controlled local internal noise sources. The extraction has allowed us to calculate the activation energy, the capture cross sections and validate the physical simulation.