<p>SiC is an attractive material since it has remarkable properties. For several years efforts have been put primarily in electronic applications. High power and high frequency devices can be fabricated on SiC due to its wide band gap, high breakdown field and high thermal conductivity. SiC devices can be used in harsh environment since its operation temperature is significantly high (about 1200 ). SiC bulk growth has been improved by seeded physical vapour transport (PVT) during last decades. However, the quality and doping concentration of SiC bulk are not good enough to be used as an active layer for devices. SiC epilayer growth by chemical vapour deposition (CVD) was established in the last three decades. Only about 5 µm/h growth rate is achieved by CVD with a standard process. Long deposition time is required to grow ≥100µm thick epilayer for high voltage devices. The main problem in standard CVD is the formation of silicon (Si) droplets due to supersaturation of Si-species on the growth surface or in the gas-phase, which is detrimental for devices performance. To solve the problem of Si-droplets, chloride-based CVD was introduced. Chlorinated species can dissolve the silicon aggregates through the formation of strong bonds to silicon species compared to Si-Si bonds. Typical chlorinated precursors are hydrogen chloride (HCl) and methyltrichlorosilane (MTS). In this thesis study, HCl was mainly used as chlorinated precursors. Distinct chlorinated precursors result in different chemical reactions which affect the epilayer growth appreciably. The Cl/Si ratio, which is the ratio of the amount of chlorinated precursors to silicon precursors, is a very critical growth parameter for morphology, growth rate and background doping concentration. The C/Si ratio and Si/H₂ ratio also affect the epilayer growth appreciably. Besides, growth temperature, growth pressure and temperature ramp up condition are other important growth parameters. In the CVD reaction chamber, the temperature profile and gas species distribution are not uniform along the whole susceptor length, which leads to different thickness of epilayer, morphology and doping concentration at different area of the reaction chamber. The polarity and off-angle of substrates can bring about complete different grown epilayers. Epitaxial defects are mainly replicated from the substrate. Therefore, the quality of substrates is very important as well. Deep energy levels can be introduced by adding transition metal such as vanadium (V), chromium (Cr) or tungsten (W). There are some limits which are needed to be overcome for a complete development of SiC. 4” SiC wafers are commercially available on the market, larger diameter would be very useful for the industrial development of SiC. High growth rate and good quality with controlled uniformity are desired for electronic applications. In this thesis, the influences of growth parameters such as C/Si and Cl/Si ratios, comparison between different precursors, growth condition in different areas of reaction chamber and effects of substrate polarity are discussed. Intentional incorporation of tungsten atoms is investigated by deep-level transient spectroscopy measurement and thermodynamic analysis.</p>

<p>It is very interesting to probe the rotational symmetry of semiconductor quantum dots for quantum information and quantum computation applications. We studied the effects of rotational symmetry in semiconductor quantum dots using configuration interaction calculation. Moreover, to compare with the experimental data, we studied the effects of hidden symmetry. The 2D single-band model and the 3D single-band model were used to generate the single-particle states. How the spectra affected by the breaking of hidden symmetry and rotational symmetry are discussed. The breaking of hidden symmetry splits the degeneracy of electron-hole single-triplet and triplet-singlet states, which can be clearly seen from the spectra.</p><p>The breaking of rotational symmetry redistributes the weight percentage, due to the splitting of p_x and p_y states, and gives a small brightness to the dark transition, giving rise to asymmetry peaks. The asymmetry peaks of 4X, 5X, and 6X were analyzed numerically. In addition, Auger-like satellites of biexciton recombination were found in the calculation. There is an asymmetry peak of the biexciton Auger-like satellite for the 2D single-band model while no such asymmetry peak occurs for the 3D single-band model. Few-particle effects are needed in order to determine the energy separation of the biexciton main peak and the Auger-like satellite.</p><p>From the experiments, it was confirmed that the lower emission energy peak of X^2- spectrum is split. The competed splitting of the X^2- spectra were revealed when temperature dependence was implemented. However, since the splitting is small, we suggest the X^2- peaks are broadened in comparison with other configurations according to single-band models. Furthermore, the calculated excitonic emission patterns were compared with experiments. The 2D single-band model fails to give the correct energy order of the peaks for the few-particle spectra; on the other hand the peaks order from 3D single-band model consistent with experimental data.</p>

<p>The purpose of this thesis work was to find a way to measure basic light emission properties of nitrogen-and-boron-doped 6H-SiC, which are fabricated with a growth method developed at Linköping University. The research is in its initial phase and the light properties as well as optical measurement techniques are important. The aim is that the results of the measurements will provide feedback to the growth process what quality and doping levels that are required to get the maximum amount of light. The measurements were performed at the Laboratory of Lighting Technology, Technical University of Darmstadt, Germany.</p><p>Two measuring methods with different excitation sources were tested: a double monochromator and a setup using near UV-filters. While the double monochromator was able to project wavelengths in steps down to 0.5 nm with a high accuracy, the filters were only available in steps of 10 nm where the accuracy of the wavelength values varied. The double monochromator was chosen for the continuing measurements.</p><p>When using excitation light between 375-390 nm the emitted light was in the visible wavelength region. The light properties measured were the irradiance (measured in W/m²) and the peak wavelength were maximum luminescence occurred.</p><p>The result showed that sample 2-4 had a peak wavelength at approximately 580‑582 nm for the excitation wavelength 375 nm. For sample 5 the peak wavelength occurred at 582 nm at the excitation wavelength 390 nm. Sample 1, the unintentionally doped, did not show any measurable results as expected.</p><p>When irradiance of the excitation light was approx. 8 W/m² the irradiance at the peak of luminescence for the samples varied between 15.03-29.35 mW/m². The low values are believed to be the result of the emitted light scattering in all directions whereas the measurements are done in one direction and only from a small area of the sample.</p><p>The measurements has shown that it is possible to measure the light properties of the grown material even though the samples were not finalized (capsulated) LED’s. The results from the measurements are of interest for the continuing development of the material.</p>

Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. Heterojunction bipolar phototransistors were fabricated with 10 Ge dot layers in the base-collector (b-c) junction. With the illumination of near infrared radiation at 1.31 to 1.55 µm, the incident light would excite the carriers. The applied field across the b-c junction caused hole transport into the base, leading to a reduced potential barrier between the emitter-base (e-b) junction. Subsequently, this resulted in enhanced injection of electrons across the base into the collector, i.e., forming an amplified photo-induced current. We have therefore obtained significantly enhanced photo-response for the Ge-dot based phototransistors, compared to corresponding quantum dot p-i-n photodiodes. Responsivity values up to 470 mA/W were measured at 1.31 µm using waveguide geometry, and ∼2.5 A/W at 850 nm, while the dark current was as low as 0.01 mA/cm2 at –2 V. Metal-oxide field-effect phototransistors were also studied. These lateral detectors were processed with three terminals for source, drain and gate contacts. The Ge quantum dot layers were sandwiched between pseudomorphically grown SiGe quantum wells. The detector devices were processed using a multi-finger comb structure with an isolated gate contact on top of each finger and patterned metal contacts on the side edges for source and drain. It was found that the photo-responsivity was increased by a factor of more than 20 when a proper gate bias was applied. With VG above threshold, the measured response was 350 and &gt;30 mA/W at 1.31 and 1.55 µm, respectively. Properties of Si/Si1-xGex nanostructures were examined, in order to facilitate proper design of the above mentioned transistor types of photodetectors. The carrier recombination processes were characterized by photoluminescence measurements, and the results revealed a gradual change from spatially indirect to direct transitions in type II Si1-xGex islands with increased measurement temperature. Energy dispersive X-ray spectrometry of buried Ge islands produced at different temperatures indicated a gradual decrease of the Ge concentration with temperature, which was due to the enhanced intermixing of Si and Ge atoms. At a deposition temperature of 730°C the Ge concentration was as low as around 40 %. Finally, the thermal stability of the Si/SiGe(110) material system, which is a promising candidate for future CMOS technology due to its high carrier mobility, was investigated by high resolution X-ray diffraction reciprocal space mapping. Anisotropic strain relaxation was observed with maximum in-plane lattice mismatch in the [001] direction. / On the day of the defence date the status of article IV was Manuscript and the title was "A three-terminal Ge dot/SiGe quantum well MOSFET photodetector for near infrared light detection"; the status of article VI was Submitted and the title was "Band alignment studies in Si/Ge quantum dots based on optical and structural investigations"; the status of article VII was Manuscript and the title was "Thermal stability of SiGe/Si(110) investigated by high-resolution X-ray diffraction reciprocal space mapping".

SiC is an attractive material since it has remarkable properties. For several years efforts have been put primarily in electronic applications. High power and high frequency devices can be fabricated on SiC due to its wide band gap, high breakdown field and high thermal conductivity. SiC devices can be used in harsh environment since its operation temperature is significantly high (about 1200 ). SiC bulk growth has been improved by seeded physical vapour transport (PVT) during last decades. However, the quality and doping concentration of SiC bulk are not good enough to be used as an active layer for devices. SiC epilayer growth by chemical vapour deposition (CVD) was established in the last three decades. Only about 5 µm/h growth rate is achieved by CVD with a standard process. Long deposition time is required to grow ≥100µm thick epilayer for high voltage devices. The main problem in standard CVD is the formation of silicon (Si) droplets due to supersaturation of Si-species on the growth surface or in the gas-phase, which is detrimental for devices performance. To solve the problem of Si-droplets, chloride-based CVD was introduced. Chlorinated species can dissolve the silicon aggregates through the formation of strong bonds to silicon species compared to Si-Si bonds. Typical chlorinated precursors are hydrogen chloride (HCl) and methyltrichlorosilane (MTS). In this thesis study, HCl was mainly used as chlorinated precursors. Distinct chlorinated precursors result in different chemical reactions which affect the epilayer growth appreciably. The Cl/Si ratio, which is the ratio of the amount of chlorinated precursors to silicon precursors, is a very critical growth parameter for morphology, growth rate and background doping concentration. The C/Si ratio and Si/H2 ratio also affect the epilayer growth appreciably. Besides, growth temperature, growth pressure and temperature ramp up condition are other important growth parameters. In the CVD reaction chamber, the temperature profile and gas species distribution are not uniform along the whole susceptor length, which leads to different thickness of epilayer, morphology and doping concentration at different area of the reaction chamber. The polarity and off-angle of substrates can bring about complete different grown epilayers. Epitaxial defects are mainly replicated from the substrate. Therefore, the quality of substrates is very important as well. Deep energy levels can be introduced by adding transition metal such as vanadium (V), chromium (Cr) or tungsten (W). There are some limits which are needed to be overcome for a complete development of SiC. 4” SiC wafers are commercially available on the market, larger diameter would be very useful for the industrial development of SiC. High growth rate and good quality with controlled uniformity are desired for electronic applications. In this thesis, the influences of growth parameters such as C/Si and Cl/Si ratios, comparison between different precursors, growth condition in different areas of reaction chamber and effects of substrate polarity are discussed. Intentional incorporation of tungsten atoms is investigated by deep-level transient spectroscopy measurement and thermodynamic analysis.

It is very interesting to probe the rotational symmetry of semiconductor quantum dots for quantum information and quantum computation applications. We studied the effects of rotational symmetry in semiconductor quantum dots using configuration interaction calculation. Moreover, to compare with the experimental data, we studied the effects of hidden symmetry. The 2D single-band model and the 3D single-band model were used to generate the single-particle states. How the spectra affected by the breaking of hidden symmetry and rotational symmetry are discussed. The breaking of hidden symmetry splits the degeneracy of electron-hole single-triplet and triplet-singlet states, which can be clearly seen from the spectra. The breaking of rotational symmetry redistributes the weight percentage, due to the splitting of px and py states, and gives a small brightness to the dark transition, giving rise to asymmetry peaks. The asymmetry peaks of 4X, 5X, and 6X were analyzed numerically. In addition, Auger-like satellites of biexciton recombination were found in the calculation. There is an asymmetry peak of the biexciton Auger-like satellite for the 2D single-band model while no such asymmetry peak occurs for the 3D single-band model. Few-particle effects are needed in order to determine the energy separation of the biexciton main peak and the Auger-like satellite. From the experiments, it was confirmed that the lower emission energy peak of X2- spectrum is split. The competed splitting of the X2- spectra were revealed when temperature dependence was implemented. However, since the splitting is small, we suggest the X2- peaks are broadened in comparison with other configurations according to single-band models. Furthermore, the calculated excitonic emission patterns were compared with experiments. The 2D single-band model fails to give the correct energy order of the peaks for the few-particle spectra; on the other hand the peaks order from 3D single-band model consistent with experimental data.

The purpose of this thesis work is to design and fabricates organic-inorganic hetero junction White Light Emitting Diode (WLED). In this WLED, inorganic material is n- type ZnO and organic material is p-type conjugated polymer. The first task was to synthesise vertically aligned ZnO nano-rods on glass as well as on plastic substrates using aqueous chemical growth method at a low temperature. The second task was to find out the proper p- type organic material that gives cheap and high efficient WLED operation. The proposed polymer shouldn’t create a high barrier potential across the interface and also it should block electrons entering into the polymer. To optimize the efficiency of WLED; charge injection, charge transport and charge recombination must be considered. The hetero junction organic-inorganic structures have to be engineered very carefully in order to obtain the desired light emission. The layered structure is composed of p-polymer/n-ZnO and the recombination has been desired to occur at the ZnO layer in order to obtain white light emission. Electrical characterization of the devices was carried out to test the rectifying properties of the hetero junction diodes. iv

The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. From economical point of view, a single wideband RF power module is more desirable rather than multiple narrowband PAs especially for multi-band and multi-mode operation. Therefore, device modeling has now become much more crucial for such applications. In order to reduce the device design cycle time, the researchers also heavily rely on computer aided design (CAD) tools. With improvement in CAD technology the model extraction has become more accurate and device physical structure optimization can be carried out with less number of iterations. LDMOS devices have been dominating in the communication field since last decade and are still widely used for PA design and development. This thesis deals with the optimization of RFLDMOS transistor and its evaluation in different PA classes, such as linear, switching, wideband and multi-band applications. For accurate evaluation of RF-LDMOS transistor parameters, some techniques are also developed in technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods. Initially the RF-LDMOS is studied in TCAD for the improved RF performance. The physical intrinsic structure of RF-LDMOS is provided by Infenion Technologies AG. A reduced surface field (RESURF) of low-doped drain (LDD) region is considered in detail because it plays an important role in RF-LDMOS devices to obtain high breakdown voltage (BVDS). But on the other hand, it also reduces the RF performance due to high on-resistance (Ron). The excess interface state charges at the RESURF region are introduced to reduce the Ron, which not only increases the dc drain current, but also improve the RF performance in terms of power, gain and efficiency. The important achievement is the enhancement in operating frequency up to 4 GHz. In LDD region, the effect of excess interface charges at the RESURF is also compared with dual implanted-layer of p-type and n-type. The comparison revealed that the former provides 43 % reduction in Ron with BVDS of 70 V, while the later provides 26 % reduction in Ron together with BVDS of 64 - 68 V. In the second part of my research work, computational load pull (CLP) simulation technique is used in TCAD to extract the impedances of RF-LDMOS at different frequencies under large signal operation. Flexible matching is an issue in the design of broadband or multi-band PAs. Optimum impedance of RF-LDMOS is extracted at operating frequencies of 1, 2 and 2.5 GHz in class AB PA. After this, CLP simulation technique is further developed in TCAD to study the non-linear behavior of RF devices. Through modified CLP technique, non-linear effects inside the transistor structure are studied by conventional two-tone RF signals in time domain. This is helpful to detect and understand the phenomena, which can be resolved to improve the device performance. The third order inter-modulation distortion (IMD3) of RF- LDMOS was observed at different power levels. The IMD3 of −22 dBc is obtained at 1-dB compression point (P1-dB), while at 10 dB back off the value increases to −36 dBc. These results were also verified experimentally by fabricating a linear PA. Similarly, CLP technique is developed further for the analysis of RF devices in high efficiency operation by investigating the odd harmonic effects for the design of class-F PA. RF-LDMOS can provide a power added efficiency (PAE) of 81.2 % in class-F PA at 1 GHz in TCAD simulations. The results are verified by design and fabrication of class-F PA using large signal model of the similar device in ADS. In fabrication, a PAE of 76 % is achieved.

This thesis describes the fabrication and testing of electroluminescent diodes made from silicon subjected to plasma ion implantation. A silicon-compatible, electrically driven light source is desired to increase the speed and efficiency of short-range data transfer in the communications and computing industries. As it is an indirect band gap material, ordinary silicon is too inefficient a light source to be useful for these applications. Past experiments have demonstrated that modifying the structural properties of the crystal can enhance its luminescence properties, and that light ion implantation is capable of achieving this effect. This research investigates the relationship between the ion implantation processing parameters, the post-implantation annealing temperature, and the observable electroluminescence from the resulting silicon diodes.<p> Prior to the creation of electroluminescent devices, much work was done to improve the efficiency and reliability of the fabrication procedure. A numerical algorithm was devised to analyze Langmuir probe data in order to improve estimates of implanted ion fluence. A new sweeping power supply to drive current to the probe was designed, built, and tested. A custom software package was developed to improve the speed and reliability of plasma ion implantation experiments, and another piece of software was made to facilitate the viewing and analysis of spectra measured from the finished silicon LEDs.<p> Several dozen silicon diodes were produced from wafers implanted with hydrogen, helium, and deuterium, using a variety of implanted ion doses and post-implantation annealing conditions. One additional device was fabricated out of unimplanted, unannealed silicon. Most devices, including the unimplanted device, were electroluminescent at visible wavelengths to some degree. The intensity and spectrum of light emission from each device were measured. The results suggest that the observed luminescence originated from the native oxide layer on the surface of the ion-implanted silicon, but that the intensity of luminescence could be enhanced with a carefully chosen ion implantation and annealing procedure.</p>

The purpose of this thesis work was to find a way to measure basic light emission properties of nitrogen-and-boron-doped 6H-SiC, which are fabricated with a growth method developed at Linköping University. The research is in its initial phase and the light properties as well as optical measurement techniques are important. The aim is that the results of the measurements will provide feedback to the growth process what quality and doping levels that are required to get the maximum amount of light. The measurements were performed at the Laboratory of Lighting Technology, Technical University of Darmstadt, Germany. Two measuring methods with different excitation sources were tested: a double monochromator and a setup using near UV-filters. While the double monochromator was able to project wavelengths in steps down to 0.5 nm with a high accuracy, the filters were only available in steps of 10 nm where the accuracy of the wavelength values varied. The double monochromator was chosen for the continuing measurements. When using excitation light between 375-390 nm the emitted light was in the visible wavelength region. The light properties measured were the irradiance (measured in W/m2) and the peak wavelength were maximum luminescence occurred. The result showed that sample 2-4 had a peak wavelength at approximately 580‑582 nm for the excitation wavelength 375 nm. For sample 5 the peak wavelength occurred at 582 nm at the excitation wavelength 390 nm. Sample 1, the unintentionally doped, did not show any measurable results as expected. When irradiance of the excitation light was approx. 8 W/m2 the irradiance at the peak of luminescence for the samples varied between 15.03-29.35 mW/m2. The low values are believed to be the result of the emitted light scattering in all directions whereas the measurements are done in one direction and only from a small area of the sample. The measurements has shown that it is possible to measure the light properties of the grown material even though the samples were not finalized (capsulated) LED’s. The results from the measurements are of interest for the continuing development of the material.