Silicon photonics has witnessed rapid development in recent years for its fabrication compatibility with the cost-effective CMOS technology. The advancement of relevant simulation tools, however, is at a relatively slow pace. The high index contrast of the usual silicon waveguide that has imposed new challenges to the convergence and accuracy of the solution technique, the growing intricacy in solitary component design, and the increased complexity of their integration, are the impelling factors that motivate us to improve the computer-aided design, modeling, simulation, and optimization methods. The theme of the thesis is on the frequency domain simulation methods supported by the complex mode theory. The complex mode theory is introduced to the simulation domain truncated by the perfectly matching layers (PMLs) enclosed in the perfectly reflected boundaries (PRBs), wherein the discrete complex modes as eigen solutions can represent the continuous radiation fields, thus yields a unified approach for handling both guided (discrete) and radiation (continuous) waves. In this thesis, theoretical investigations have been conducted along a few different lines aiming at improving the efficiency and accuracy in complex mode expansion. Properties of high-order complex Berenger modes are firstly addressed through asymptotic solutions, and it is found that as the mode order increases, the symmetry of the cladding and substrate in the simulation domain, instead of the guiding schemes, plays a more and more decisive role regarding mode classification and modal field distribution. A weighed optical path method is then proposed to unify the high-order Berenger modes, and to enhance the symmetry of high order modes’ field distributions in the asymmetric structures, leading to the improvement in convergence speed and stability in the mode expansion. Next, an improved mode-matching method (MMM) is proposed based on an error-minimizing method instead of the conventional approach relying on the unreliable modal orthogonal property. The newly proposed method is significantly more robust as numerical errors usually jeopardize the modal orthogonality. This claim is exemplified by simulation results on silicon channel waveguide facet, bending waveguide, and silicon-germanium photo-detector waveguide. As a direct application of the improved complex mode theory, a hybrid plasmonic-photonic nano-ribbon waveguide is proposed, standing as a combination of the silicon slot and surface plasmon polariton (SPP) waveguides, is proposed and analyzed. We have found that the fundamental mode is featured at low loss as in optical waveguide as well as high confinement as in plasmonic structure. Simulations have shown that millimeter range propagation can be sustained with strong confinement. We have further studied such waveguide with an extra layer of phase changing material incorporated, attempting to realize the efficient electro-optical phase and/or loss modulation. Finally, an optical switch design is proposed by taking the full advantage of the aforementioned structure. / Thesis / Doctor of Philosophy (PhD)

Silicon photonics offers great benefits in terms of cost, performance and power consumption. This is increasingly important as the demand for internet bandwidth continues to grow. Optical detection in silicon photonics is performed via the integration of germanium, one of the more challenging integration steps during fabrication. This thesis describes research into a novel technique to grow silicon-germanium on silicon and its application in waveguide detectors and research performed into the application of germanium at extended wavelengths of light. Chapter 1 provides a brief introduction to silicon photonics and chapter 2 covers background material on p-n and p-i-n detectors as well as germanium growth on silicon and it’s applications in silicon photonics. Chapter 3 presents work done on a germanium condensation technique using high fluence ion implantation, suitable for straightforward silicon-germanium fabrication. Using this technique a crystalline layer of silicon-germanium with a high concentration of 92% germanium was demonstrated. In addition a semi-empirical model was developed using a segregation coefficient, an enhanced linear oxidation rate and transient enhanced diffusion. This technique was then used to fabricate a photodetector for operation at a wavelength of 1310 nm. While the responsivity of the detector of 0.01 A/W was modest, this work presents the first demonstration of a detector fabricated in this way, and as such provides a foundation for future improved devices. Chapter 4 presents work done on p-i-n germanium detectors to increase their detection limit in the thulium doped fibre amplifier band. This work originally focused on using mid-bandgap lattice defects introduce via ion implantation to improve the detection limit. However, during this experimental work it was determined that the unimplanted samples had a responsivity of 0.07 A/W at 1850 nm and 0.02 A/W at 2000 nm which was higher than that of the defect implanted samples and so the unimplanted samples were investigated further. From this work it was found that the absorption of the germanium detectors was 0.003 μm-1 at 1900 nm, which is approximately a factor of 10 greater than that of bulk germanium. The increased responsivity and absorption coefficient were attributed to tensile strain in the germanium. In Chapter 5 Raman spectroscopy was employed in order to investigate the detectors described in chapter 4 and confirm the presence of tensile strain. When compared with Raman spectra from a bulk germanium sample it was found that the detectors were experiencing 0.27 to 0.48 % tensile strain, consistent with the enhanced absorption at extended wavelengths. Nanowire bridges were then fabricated in germanium and silicon-germanium and characterized using Raman spectroscopy. Germanium was found to have enhanced strain in the nanowire with an enhancement of up to 13.5 demonstrated, whereas for the silicon-germanium samples the structures were shown to reduce the compressive strain in the samples. It is concluded that strain engineering is a very promising route for the development of extended wavelength detectors integrated with silicon photonic systems. / Thesis / Doctor of Philosophy (PhD)

Silicon photonics provides an environmentally sustainable pathway to a more robust data infrastructure. To compensate for optical power losses, methods of amplification are required; specifically, amplifiers that can fit in a small footprint for applications in data centres. Semiconductor optical amplifiers (SOA) provide such a solution, and can be fabricated using III-V ternary or quaternary materials to enhance optical signals through a device on the scale of most CMOS components. This research sought to fabricate an InGaAsP multiple quantum well semiconductor optical amplifier using the facilities in McMaster University’s Centre for Emerging Device Technologies (CEDT). A ridge waveguide laser diode was first fabricated and validated, then altered by applying an anti-reflective coating to the waveguide facets to suppress reflections in the Fabry-Perot cavity in an attempt to create an SOA. The design process and fabrication methodology are explained, including an analysis of failed methodologies. Characterization measurement techniques are then detailed for the fabricated devices. Finally, the performance of the devices is presented, and future steps are suggested for improving the fabrication process to enhance device characteristics. The fabricated laser diodes produced an output power in excess of 20 mW at a peak wavelength near 1580 nm. The subsequently coated devices proved difficult to measure, displaying a maximum of 0 dB or 1 dB gain when checked for amplification, with suspicions that output loss (and therefore gain) was higher than measured. The coated devices exhibited gain saturation between -10 and 0 dBm of input power. Owing to the shapes of their characteristic curves, it was determined that SOA devices were successfully created. / Thesis / Master of Applied Science (MASc)

Integrated Silicon Photonics has emerged as a powerful platform in the last two decades amongst high-bandwidth technologies, particularly since the adop- tion of CMOS compatible silicon-on-insulator(SOI) substrates. Microring res- onators are one of the fundamental blocks on a photonic integrated circuit chip o ering versatility in varied applications like sensing, optical bu ering, ltering, loss measurements, lasing, nonlinear e ects, understanding cavity optomechanics etc. This thesis covers the design and modeling of microring resonators for biosensing applications. The two applications considered are : homogeneous biosensing and wrist pulse pressure monitoring. Also, the designs have been used to fabricate ring resonator device using three different techniques. The results obtained through characterization of these devices are presented. Following are the observations made in lieu of this: 1) Design modeling and analysis - The analysis of ring resonator requires the study of both the straight and bent waveguide sections. Both rib and strip waveguide geometries have been considered for constructing the device as a building block by computing their respective eigen modes for both quasi-TE and quasi-TM polarizations. The non-uniform evanescent coupling between the straight and curved waveguide has been estimated using coupled mode theory. This method provided in estimating the quality-factor and free spec- tral range (FSR) of the ring-resonator. A case for optimizing the waveguide gap in the directional coupler section of a ring resonator has been presented for homogeneous biosensing application. On similar lines, a model of applying ring resonator for arterial pulse-pressure measurement has been analyzed. The results have been obtained by employing FD-BPM and FDTD including semi- vectorial eigen mode solutions to evaluate the spectral characteristics of ring resonator. The modeling and analytical results are supported by commercial software tools (RSoft). 2) Fabrication and Characterization - For the fabrication, we employ the design of ring resonator of radius 20 m on SOI substrate with two different waveguide gaps of 350 and 700 nm. Three different process sows have been used for fabricating the same device. The rst technique involved using negative e-beam resist HSQ which after exposure becomes SiO2, acts as a mask for Reactive-Ion Etching (RIE); helping in eliminating an additional step. The second technique involved the use of positive e-beam resist, PMMA for device patterning followed by metal deposition with lift-o . The third tech- nique employed was Focussed Ion-beam (FIB) which is resist-less patterning by bombarding Ga+ ions directly onto the top surface of the wafer with the help of a GDS le. The characterization process involved estimation of loss and observing the be- havior of optical elds in the device around the wavelength of 1550 nm using near-field scanning optical microscopy (NSOM) measurement. The estimation of roughness-induced losses has been made by performing Atomic Force Microscopy (AFM) measurements. In summary, the thesis presents novel design and analysis of SOI based microring resonators for homogeneous biosensing and wrist pulse pressure sensing applications. Also, the fabrication and characterization of 20 m radius ring- resonator with 500 500 nm rib cross-section is presented. Hence, this study brings forth several practical issues concerning application of ring resonators to biosensing applications.

The design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct wafer bonding.

Silicon Photonics has been a major success story in the last decade, with many photonic devices having been successfully demonstrated. The only missing component is the light source, however, as making an efficient light source in silicon is challenging due to the material's indirect bandgap. The development of a silicon light source would enable us to make an all-silicon chip, which would find many practical applications. The most notable among these applications are on-chip communications and sensing applications. In this PhD project, I have worked on enhancing silicon light emission by combining material processing and device engineering methods. Regarding materials processing, the emission level was increased by taking three routes. In all the three cases the emission was further enhanced by coupling it with a photonic crystal (PhC) cavity via Purcell effect. The three different approaches taken in this PhD project are listed below. 1. The first approach involves incorporation of optically active defects into the silicon lattice by hydrogen plasma treatment or ion implantation. This process results in broad luminescence bands centered at 1300 and 1500 nm. By coupling these emission bands with the photonic crystal cavity, I was able to demonstrate a narrowband silicon light emitting diode at room temperature. This silicon nano light emitting diode has a tunable emission line in the 1300-1600 nm range. 2. In the second approach, a narrow emission line at 1.28µm was created by carbon ion implantation, termed “G-line” emission. The possibility of enhancing the emission intensity of this line via the Purcell effect was investigated, but only with limited success. Different proposals for future work are presented in this regard. 3. The third approach is deposition of a thin film of an erbium disilicate on top of a PhC cavity. The erbium emission is enhanced by the PhC cavity. Using this method, an optically pumped light source emitting at 1.54 µm and operating at room temperature is demonstrated. A practical application of silicon light source developed in this project in gas sensing is also demonstrated. As a first step, I show refractive index sensing, which is a simple application for our source and demonstrates its capabilities, especially relating to the lack of fiber coupling schemes. I also discuss several proposals for extending applications into on-chip biological sensing.

Silicon-on-insulator (SOI) technology has become increasingly attractive because of the strong light confinement, which significantly reduces the footprint of the photonic components, and the possibility of monolithically integrating advanced photonic waveguide circuits with complex electronic circuits, which may reduce the cost of photonic integrated circuits by mass production. This thesis is dedicated to numerical simulation and experimental performance measurement of passive SOI waveguide devices. The thesis consists of two main parts. In the first part, SOI curved waveguide and corner turning mirror are studied. Propagation losses of the SOI waveguide devices are accurately measured using a Fabry-Perot interference method. Our measurements verify that the SOI corner turning mirror structures can not only significantly reduce the footprint size, but also reduce the access loss by replacing the curved sections in any SOI planar lightwave circuit systems. In the second part, an optical 90o hybrid based on 4 × 4 multimode interference (MMI) coupler is studied. Its quadrature phase behavior is verified by both numerical simulations and experimental measurements.

<div>Miniaturization of optical components with low power consumption fabricated using a CMOS foundry process can pave the way for dense photonic integrated circuits and on-chip quantum information processing. Optical waveguides, modulators/switches, and single-photon detectors are the key components in any photonic circuits, and miniaturizing them is challenging. This requires strong control of evanescent waves to reduce the cross-talk and bending loss as well as low mode volumes to increase light-matter interaction.</div><div><br></div><div><div>In this thesis, we propose a paradigm shift in light connement strategy using transparent all-dielectric metamaterials. Our approach relies on controlling the optical</div><div>momentum of evanescent waves, an important electromagnetic property overlooked in photonic devices. For practical applications, we experimentally demonstrate</div><div>photonic skin-depth engineering on a silicon chip to conne light and to reduce the cross-talk and bending loss in a dense photonic integrated circuit.</div></div><div><br></div><div><div>We demonstrate that due to the strong light connement in the proposed waveguides, it is possible to miniaturize and integrate superconducting nanowire singlephoton detectors (SNSPDs) into a silicon chip. The timing jitter and dark-count</div><div>rate in these miniaturized SNSPDs can be considerably reduced. Here, we propose a theoretical model to understand the fundamental limits of these nanoscale SNSPDs and the trade-off between timing jitter, dark-count, and quantum effciency in these detectors. We propose experimental tests to verify the validity of our model.</div></div><div><br></div><div><div>Switching/modulating cavity Purcell factor on-chip is challenging, so we have proposed a nonlinear approach to switch Purcell factors in epsilon near zero (ENZ) materials. We demonstrate fourfold change in the Purcell factor with a switching time of 50 fs. The work in this thesis can lead to a unique platform for on-chip quantum nanophotonics.</div></div>

L’utilisation du germanium dopé de type n et contraint en tension ouvre la possibilité d’obtenir une source laser monolithique pour la photonique sur silicium. Mes travaux étudient l’injection électrique dans le germanium pour sonder la réalisation d’un laser contraint. J’ai dimensionné les performances des futurs dispositifs en fonction de la contrainte et du dopage. Pour cela, j’ai simulé le transport des porteurs au travers de doubles hétérostructures afin d’obtenir l’inversion de population dans la couche de germanium a été mis en évidence. Un régime de fonctionnement qui permet de réduire de deux ordres de grandeur le courant de seuil d’inversion de population. En appliquant une déformation de 0.9%, avec un dopage de 4×〖10〗^19 cm-3, on peut obtenir des densités de courant de seuil inférieures à 10 kA/cm2. La formation d’hétérostructure avec le germanium est critique. Afin d’étudier expérimentalement l’électroluminescence du germanium, j’ai dû établir des méthodes alternatives d’injection des porteurs à la double hétérostructure GaAs-p/Ge-n/GaAs-n. On utilise des contacts redresseurs (Schottky) sur des couches de germanium dopées de type n. Cette méthode a été optimisée par la passivation de la surface du germanium avec une couche d’oxyde, qui permet l’amélioration des propriétés électriques et d’émission radiative. On a aussi développé une approche permettant de former des couches de SiGe sur germanium par épitaxie induite par recuit laser pour obtenir une double hétérostructure. J’ai réalisé plusieurs types de cavités en germanium qui permettent de combiner le transfert de la contrainte avec l’injection électrique. J’ai établi le procédé de fabrication pour des structures en guide d’onde et en micropilier en utilisant un transfert de déformation par des couches de SiN contraintes. Un niveau de déformation biaxial de 0.72% pour des cavités en micropilier sous injection électrique a été atteint. L’évaluation de la déformation à partir des spectres d’électroluminescence a été confrontée à des simulations de déformation mécanique par éléments finis, tout en considérant l’injection électrique des porteurs dans la structure / Tensile strained and n-doped germanium can be used as an active material for the realization of an optical source for silicon photonics. I have investigated electroluminescence of device as a function of tensile strain and n-doping. For that, I have performed modeling of the carrier transport through double heterostructures to obtain population inversion in the germanium layer. An operating point that reduces by two orders of magnitude the population inversion current threshold has been evidenced. For a germanium layer doped at 4×〖10〗^19 cm-3 with a 0.9% biaxial strain, the current density threshold could be reduced below the 10 kA/cm2 range. The germanium interface properties are critical. To experimentally investigate electroluminescence in germanium, I had to establish different methods of carrier injection to offer an alternative to the double heterostructure p-GaAs/n-Ge/n-GaAs. We first propose to use a Schottky heterostructure to inject carriers in n-doped germanium. We show that carrier injection and electroluminescence devices can be optimized by depositing a thin interfacial oxide layer on top of n-doped germanium. We have also developed an approach to form SiGe layers on germanium by epitaxial laser induced annealing in order to obtain a double heterostructure. I have developed several clean room processes to fabricate germanium cavities which can combine electrical injection and strain transfer, including waveguides and micropilars structures. We show that a biaxial tensile strain up to 0.72% can be transferred in micropilar cavities under electrical pumping. The evaluation of strain level was confronted to finite element simulations of mechanical deformation, taking into account the electrical carrier injection

Ce travail vise à concevoir un modulateur optique assisté par plamsons, compatible CMOS et à faible consommation électrique. L’électro-absorption, basée sur l’effet Franz-Keldysh dans le germanium, a été choisie comme principe de modulation pour réduire la taille du dispositif et la consommation d'énergie électrique associée. L’effet Franz-Keldysh se traduit par un changement du coefficient d'absorption du matériau près du bord de bande sous l'application d'un champ électrique statique, d'où la production d'une modulation directe de l'intensité lumineuse. L'utilisation de plasmons permet en principe d’augmenter l'effet électro-optique en raison du fort confinement du mode optique. Un outil de simulation électro-optique intégré a été développé pour concevoir et optimiser le modulateur. Le modulateur plasmonique proposé a un taux d'extinction de 3.3 dB avec des pertes d'insertion de 11.2 dB et une consommation électrique de seulement 20 fJ/bit, soit la plus faible consommation électrique décrite pour les modulateurs photoniques sur silicium. Le couplage du modulateur à un guide silicium standard en entrée et en sortie a également été optimisé par l’introduction d'un adaptateur de mode Si-Ge optimisé, réduisant les pertes de couplage à seulement 1 dB par coupleur. Par ailleurs, un travail expérimental a été effectué pour tenter de déplacer l'effet Franz-Keldysh, maximum à 1650 nm, à de plus faibles longueurs d'onde proches de 1.55 μm pour des applications aux télécommunications optiques. / This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in Germanium was chosen for modulation. It consists in the change of the absorption coefficient of the material near the band edge under the application of a static electric field, hence producing a direct modulation of the light intensity. The use of plasmons allows enhancing the electro-optical effect due to the high field confinement. An integrated electro-optical simulation tool was developed to design and optimize the modulator. The designed plasmonic modulator has an extinction ratio of 3.3 dB with insertion losses of 13.2 dB and electrical power consumption as low as 20 fJ/bit, i.e. the lowest electrical power consumption reported for silicon photonic modulators. In- and out-coupling to a standard silicon waveguide was also engineered by the means of an optimized Si-Ge taper, reducing the coupling losses to only 1 dB per coupler. Besides, an experimental work was carried out to try to shift the Franz-Keldysh effect, which is maximum at 1650 nm, to lower wavelength close to 1.55 μm for telecommunication applications.