京都大学 / 新制・課程博士 / 博士(工学) / 甲第23512号 / 工博第4924号 / 新制||工||1769(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 山田 啓文, 教授 引原 隆士 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

No description available.

Neste trabalho foram estudadas as fases topológicas não triviais presentes em sistemas formados pela deposição de átomos de grafeno. Encontramos que quando um átomo hibridiza fortemente com o grafeno, apresenta um momento magnético e um forte spin-órbirta é possível a formação de uma rede hexagonal de baricentros que efetivamente gera uma estrutura de bandas característica de um efeito hall quântico anômalo. Especificamente, determinamos que o Ru satisfaz estas características. Quando este metal é depositado em uma configuração triangular no grafeno ocorrem picos na densidade de estados localizados no centro geométrico (baricentro) dos triângulos formados pelos Ru. Estes picos estão distribuídos de forma hexagonal e efetivamente geram uma estrutura de bandas que nas proximidades do nível de Fermi apresenta uma configuração de spin característica do efeito Hall quântico anômalo. Adicionalmente, encontramos que o sistema composto pela absorção de Ba ou Sr no grafeno favorece a formação do efeito Hall quântico de spin. Neste sistema, o acoplamento spin-órbita (SOC) gera um gap mais de 1000 vezes maior ao período no grafeno prístino. Para o estudo destes sistemas, implementamos no código SIESTA a aproximação on-site do acoplamento spin-órbita via o formalismo dos pseudopotenciais relativísticos de norma conservada. Nossa implementação foi testada a partir do estudo de fenômenos já conhecidos: i) o strong spin-splitting gerado no grafeno pela adsorção de Au, ii) o efeito hall quântico de spin no poço quântico de HgTe/CdTe e, iii) a formação de estados topológicos na superfície do Bi2Se3 e as fases magnéticas deste material com átomos de Mn adsorvidos. / In this work, were studied the non-trivial topological phases present in systems formed by deposition of atoms in graphene. We found that when an atom hybridizes strongly with grapheme, has a magnetic moment and a strong spin-orbit it is possible the formation of a hexagonal network of barycentres that effectively generates a structure band characteristic of a quantum anomalous Hall effect. Specifically, we determined that Ru satisfies these characteristics. When this metal is deposited in a triangular configuration in grapheme, peaks occur in the density of localized states in the geometric center (centroid) of the triangles formed by Ru. These peaks are distributed in a hexagonal structure and effectively generates a band structure that near the Fermi level has a spin configuration characteristic of the spin quantum Hall effect anomalous. Additionally, we found that the system composed by the adsorption of Ba or Sr in grapheme, promotes the formation of spin quantum Hall effect. In this system, the spin-orbit coupling (SOC) generates a gap more than 1000 times grater that predicted in pristine praphene. To study these systems, wu implemented in the code SIESTA the on-site approach of the spin-orbit coupling throught the formalism of norm conserved relativistic pseudo potentials. Our implementation was tested from the study of phenomena already known: i) the strong spin-splitting generated in graphene by adsorption of Au, ii) the quantum spin Hall effect in quantum well of HgTe / CdTe and, iii) formation of topological states in the surface of Bi2Se3 and the magnetic of this material with Mn atoms adsorved.

Neste trabalho foram estudadas as fases topológicas não triviais presentes em sistemas formados pela deposição de átomos de grafeno. Encontramos que quando um átomo hibridiza fortemente com o grafeno, apresenta um momento magnético e um forte spin-órbirta é possível a formação de uma rede hexagonal de baricentros que efetivamente gera uma estrutura de bandas característica de um efeito hall quântico anômalo. Especificamente, determinamos que o Ru satisfaz estas características. Quando este metal é depositado em uma configuração triangular no grafeno ocorrem picos na densidade de estados localizados no centro geométrico (baricentro) dos triângulos formados pelos Ru. Estes picos estão distribuídos de forma hexagonal e efetivamente geram uma estrutura de bandas que nas proximidades do nível de Fermi apresenta uma configuração de spin característica do efeito Hall quântico anômalo. Adicionalmente, encontramos que o sistema composto pela absorção de Ba ou Sr no grafeno favorece a formação do efeito Hall quântico de spin. Neste sistema, o acoplamento spin-órbita (SOC) gera um gap mais de 1000 vezes maior ao período no grafeno prístino. Para o estudo destes sistemas, implementamos no código SIESTA a aproximação on-site do acoplamento spin-órbita via o formalismo dos pseudopotenciais relativísticos de norma conservada. Nossa implementação foi testada a partir do estudo de fenômenos já conhecidos: i) o strong spin-splitting gerado no grafeno pela adsorção de Au, ii) o efeito hall quântico de spin no poço quântico de HgTe/CdTe e, iii) a formação de estados topológicos na superfície do Bi2Se3 e as fases magnéticas deste material com átomos de Mn adsorvidos. / In this work, were studied the non-trivial topological phases present in systems formed by deposition of atoms in graphene. We found that when an atom hybridizes strongly with grapheme, has a magnetic moment and a strong spin-orbit it is possible the formation of a hexagonal network of barycentres that effectively generates a structure band characteristic of a quantum anomalous Hall effect. Specifically, we determined that Ru satisfies these characteristics. When this metal is deposited in a triangular configuration in grapheme, peaks occur in the density of localized states in the geometric center (centroid) of the triangles formed by Ru. These peaks are distributed in a hexagonal structure and effectively generates a band structure that near the Fermi level has a spin configuration characteristic of the spin quantum Hall effect anomalous. Additionally, we found that the system composed by the adsorption of Ba or Sr in grapheme, promotes the formation of spin quantum Hall effect. In this system, the spin-orbit coupling (SOC) generates a gap more than 1000 times grater that predicted in pristine praphene. To study these systems, wu implemented in the code SIESTA the on-site approach of the spin-orbit coupling throught the formalism of norm conserved relativistic pseudo potentials. Our implementation was tested from the study of phenomena already known: i) the strong spin-splitting generated in graphene by adsorption of Au, ii) the quantum spin Hall effect in quantum well of HgTe / CdTe and, iii) formation of topological states in the surface of Bi2Se3 and the magnetic of this material with Mn atoms adsorved.

Submitted by Daniella Sodre (daniella.sodre@ufpe.br) on 2015-04-08T12:40:55Z No. of bitstreams: 2 DISSERTAÇÃO Gabriel Fonseca.pdf: 3837074 bytes, checksum: e2c9b20882785e374170658d648ee389 (MD5) license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) / Made available in DSpace on 2015-04-08T12:40:55Z (GMT). No. of bitstreams: 2 DISSERTAÇÃO Gabriel Fonseca.pdf: 3837074 bytes, checksum: e2c9b20882785e374170658d648ee389 (MD5) license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) Previous issue date: 2014-03-10 / Conselho Nacional de Desenvolvimento Científi co e Tecnol ógico; Coordenação de Aperfeiçoamento de Pessoal de Ní vel Superior; Financiadora de Estudos e Projetos; Fundação de Amparo a Ciência e Tecnologia do Estado de Pernambuco. / In this master thesis we study experimentally the longitudinal spin Seebeck effect (LSSE) in bilayers made of a ferromagnetic insulator (FMI) and a metallic layer (M). We also present a theoretical model based on the spin current density ⃗ Js carried by a non-equilibrium magnon distribution, generated by a thermal gradient ∇T across the thickness of the FMI. When ⃗ Js reach the FMI/M interface it is pumped towards the M layer due to conservation of the angular momentum, so, the M layer is essential for the LSSE existence. Here the FMI consists of a Yttrium Iron Garnet (YIG) lm, grown over a Gadolinium Gallium Garnet (GGG) substrate. Different metallic materials were used as the M layer i.e. Pt and Ta that have normal behavior and Py that is a ferromagnetic metal (FMM). The experimental procedure consists of systematic measurements of the electric voltage VISHE, produced by ⃗ Js through the Inverse Spin Hall Effect (ISHE) in the normal metal or (FMM) layer. In YIG/Pt measurements were done in the temperature range from 20 to 300 K. The experimental data are tted to the proposed model for the LSSE and good agreement is obtained. The results shows that the Py and Ta can be used to detect the LSSE with the ISHE. The results of this master thesis have strong interest in the area of spin caloritronics helping to the development of the eld and to raise possibilities of new spintronic devices. ----- Nesta diserta ção e estudado experimentalmente o Efeito Seebeck de Spin Longi- tudinal (LSSE), em bicamadas formadas por um isolante ferromagn etico (FMI) e um lme metalico (M). Tamb em foi desenvolvido um modelo te orico baseado na den- sidade de corrente de spin ⃗ Js que existe quando uma distribui c~ao de m agnons fora do equil brio e gerada por um gradiente t ermico ∇T aplicado na sec ção transversal do FMI. Quando ⃗ Js chega na interface FMI/M e bombeada para a camada M satis- fazendo a conserva ção do momentum angular, assim que a camada NM e essencial para ter um LSSE. Como camada FMI foi utilizada a granada de trio e ferro (YIG) crescida num substrato de (GGG). Diferentes materiais metalicos foram utilizados como camada M, sendo Pt e Ta paramagn eticos e o Py ferromagnetico. O proced- imento experimental consiste na medi c~ao sistem atica da voltagem el etrica VISHE, que e produzida por ⃗ Js por meio do efeito Hall de spin inverso (ISHE) que ocorre na camada M. As medidas em YIG/Pt foram feitas numa faixa ampla de temperatura de 20 a 300 K. Os dados experimentais são fi tados com a teoria proposta para o LSSE encontrando-se boa concordância. Nossos resultados mostram que o Py e o Ta s~ao bons candidatos para detec ção do LSSE. Esta disserta ção e de grande interesse na area da caloritrônica de spin, ajudando no desenvolvimento deste campo e na concep ção de novos dispositivos tecnol ogicos baseados na spintrônica.

No description available.

Dans une première partie nous explorerons les effets d'impuretés désordonnées et paramagnétiques sur l'effet spin-Hall intrinsèque dans un gaz d'électrons bi-dimensionnel avec un couplage spin-orbite de Rashba. A faible désordre, la conductivité de spin-Hall reste proche de sa valeur d'échantillon pur, comme le montrent un calcul analytique de réponse linéaire et une étude numérique. De fortes fluctuations sont toutefois observées, elles augmentent avec l'importance du désordre. Pour caractériser la dynamique d'un paquet d'onde sur un réseau, nous mesurons sa taille, le taux de participation inverse, et sa dimension de corrélation. Le système subit une transition de localisation à une valeur critique du désordre. Dans le régime localisé, la densité locale d'états n'est plus uniforme et ne coïncide plus avec la densité totale d'états. Une corrélation antiferromagnétique entre les impuretés et les électrons de conduction est observée. Après la transition de localisation, la conductivité de spin augmente significativement. La première correction quantique dans le formalisme de réponse linéaire, contribue positivement à la conductivité de spin-Hall. Dans une seconde partie, le modèle de Hubbard avec double échange avec corrélations électroniques est étudié par la méthode du champ moyen dynamique (DMFT) dans l'approximation de non-croisement pour la résolution du problème d'impureté (NCA). Autour du quart remplissage, un polaron orbital est observé et décrit à l'aide d'un Hamiltonien effectif. Le double échange dans les semi-conducteurs magnétiques dilués est étudié dans l'approximation du potentiel cohérent (CPA). / Spintronics is a research area that is concerned with the storage and transfer of information by means of electron spins. In the first part we investigated the intrinsic spin Hall effect in the presence of disordered magnetic impurities in a paramagnetic state in a two dimensional electron gas with Rashba spin-orbit coupling. In the presence of weak magnetic disorder the spin Hall conductivity stays close to its universal (clean system) value, as shown by analytical linear response calculations and numerical simulations. Heavy spin conductivity fluctuations are observed, that increase with disorder strength. To investigate the spreading of a wavepacket on a lattice we measure the wavepacket width, the inverse participation ratio and the (2)-fractal dimension. It is shown the system undergoes a localization transition at a critical disorder strength. In the localized regime the local density of states is not uniform anymore. An anti-ferromagnetic correlation between electron spins and impurity magnetic moments is observed. Beyond the localization transition the spin conductivity increases significantly. The first quantum (Cooperon) corrections in the linear response formalism are shown to contribute positively to the spin Hall conductivity. In the second part the double exchange Hubbard model for correlated electron systems is studied using dynamical mean field theory (DMFT) with the non-crossing approximation (NCA). Around quarter filling an orbital polaron is observed, numerically and in an effective Hamiltonian. Double exchange in dilute magnetic semiconductors is studied using the coherent potential approximation (CPA).

<p>In this overview I describe the simplest models for the quantum Hall and quantum spin Hall effects, and give some general indications as to the description of topological insulators. As a background to the theoretical models I will first trace the development leading up to the description of topological insulators . Then I will present Laughlin's original model for the quantum Hall effect and briefly discuss its limitations. After that I will describe the Kane and Mele model for the quantum spin Hall effect in graphene and discuss its relation to a general quantum spin Hall system. I will conclude by giving a conceptual description of topological insulators and mention some potential applications of such states.</p>

In this overview I describe the simplest models for the quantum Hall and quantum spin Hall effects, and give some general indications as to the description of topological insulators. As a background to the theoretical models I will first trace the development leading up to the description of topological insulators . Then I will present Laughlin's original model for the quantum Hall effect and briefly discuss its limitations. After that I will describe the Kane and Mele model for the quantum spin Hall effect in graphene and discuss its relation to a general quantum spin Hall system. I will conclude by giving a conceptual description of topological insulators and mention some potential applications of such states.

La loi de Moore est basée sur l’observation empirique qu’environ chaque deux années, le nombre de transistors dans des circuits denses intégrées double. Cette tendance s'est bien maintenue au cours des dernières décennies (années 1970 et suivantes). Cependant, la miniaturisation continue des transistors entraîne une augmentation significative des pertes d’énergie par le courant de fuite, ce qui augmente la consommation d'énergie de veille. Cette perte d’énergie est devenue un problème majeur dans la microélectronique pendant les dernières années, ce qui rend plus difficile le développement des nouvelles technologies. L’une des solutions est de placer des éléments mémoire non-volatile dans le puce, qui retiennent la configuration du transistor pendant la mise hors tension et permettent de le restaurer à la mise sous tension. Les Magnetic Random Access Memories (MRAM) sont considérées par l'ITRS comme un candidat crédible pour le remplacement potentiel de SRAM et de DRAM au-delà du nœud technologique de 20 nm. Bien que les exigences de base pour la lecture et l'écriture d'un élément de mémoire unique sont remplies, l'approche actuelle basée sur Spin Torque Transfer (STT) souffre d'un manque inné de la flexibilité. Le courant électrique entraine le retournement de l’aimantation de la couche ferromagnétique libre par le transfert du moment angulaire d’une couche ferromagnétique adjacent. Ainsi les éléments de mémoire basées sur STT ont deux terminaux dont les voies de courant pour « écriture » et « lecture » sont définies par la forme de «pillar». L’optimisation indépendant des paramètres d’écriture et de lecture reste, donc, très difficile. Au même temps, la densité de courant trop haute, nécessaire pour écrire, conduit à la vieillissement prémature du jonction tunnel. En conséquence, l’intégration MRAM dans la technologie du semi-conducteur reste, donc, difficile.Démonstrations récentes de reversement d’aimantation entrainées par l’injection d’un courant planaire dans des heterostructures métal lourd/ferromagnet ont attiré l’attention croissante sur les couples de spin basé sur le transfert du moment angulaire par l’effet Hall de spin et les effets d’interface. Contrairement à STT-MRAM, la SOT-MRAM a trois terminaux, dont les voies de courant pour « écriture » et « lecture » sont indépendantes. Cela permet d’améliorer les paramètres « écriture » et « lecture » de manière indépendante. Pour contrôler et optimiser les SOT il est nécessaire de comprendre très bien leur origine. Cela reste l’une des plus importantes questions dont on n’a pas une réponse définitive. Dans ce contexte, plusieurs études ont conclu sur un modèle basé seulement sur l’effet Hall de spin, en même temps que d’autres ont suggéré un modèle basé sur une contribution combiné de l’effet Hall de spin et l’effet d’interface.L’objectif de cette thèse est de réaliser une étude systématique sur les effets d’interface sur les SOT dans des heterostructures métal lourde/ferromagnet a base de Pt, avec aimantation planaire.Dans ce but, cette thèse explore trois voies différentes. Premièrement nous avons modifié le rapport entre les effets d’interface et les effets bulk en changeant l’épaisseur de la couche de Pt et en suivant l’évolution des SOT. En deuxième nous avons exploré des différents empilements métal lourde/ferromagnet afin d’étudier différentes interfaces. Finalement, nous avons changé les propriétés des interfaces soit par changer la structure cristalline soit par oxydation. La technique de mesure, la méthode d’analyse de données associé et les aspects théoriques nécessaires pour l’interprétation des données sont aussi détaillés dans ce manuscrit. / Moore’s law is based on empirical observation and states that every two years approximately, the number of transistors in dense integrated circuits doubles. This trend has held up well in the past several decades (1970s and onwards). However, the continuous miniaturisation of transistors brings about a significant increase in leakage current, which increases the stand-by power consumption. This energy loss has become a major problem in microelectronics during the last several years, making the development of new technologies more difficult. One of the solutions that can address this issue is to place non-volatile memory elements inside the chip, that retain the configuration of the transistor during power-off and allow to restore it at power-on. Magnetic Random Access Memories (MRAM) are considered by the ITRS as a credible candidate for the potential replacement for SRAM and DRAM beyond the 20 nm technological node. Though the basic requirements for reading and writing a single memory element are fulfilled, the present approach based on Spin Transfer Torque (STT) suffers from an innate lack of flexibility. The electric current drives the magnetization switching of a free ferromagnetic layer by transferring angular momentum from an adjacent ferromagnet. Therefore, STT-based memory elements are two terminal devices in which the “pillar” shape defines both the “read” and the “write” current paths. Independent optimisation of the reading and writing parameters is therefore difficult, while the large writing current density injected through the tunnel barrier causes its accelerated ageing, particularly for fast switching. Consequently, the integration of MRAM into semiconductor technology poses significant difficulties.Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal (HM)/ferromagnet (FM) heterostructures have drawn increasing attention to spin-torques based on orbital-to-spin momentum transfer induced by Spin Hall and interfacial effects (SOTs). Unlike STT-MRAM, the in-plane current injection geometry of SOT-MRAM allows for a three-terminal device which decouples the “read” and “write” mechanisms, allowing the independent tuning of reading and writing parameters. However, an essential first step in order to control and optimise the SOTs for any kind of application, is to better understand their origin. The origin of the SOTs remains one of the most important unanswered questions to date. While some experimental studies suggest a SHE (Spin Hall Effect)-only model for the SOTs, others point towards a combined contribution of the bulk (SHE) and interface (Rashba Effect and Interfacial SHE). At the same time, many studies start with a SHE only hypothesis and do not consider interfacial effects. Furthermore, there are not so many systematic studies on the effects of interfaces. This thesis tries to fill in this gap, by providing a systematic study on the effects of interfaces on the SOTs, in Pt-based NM/FM/HM multilayers with in-plane magnetic anisotropy. For this purpose, this thesis explores three different, but related avenues. First, we changed the interface/bulk effect ratio by modifying the Pt thickness and following the evolution of the SOTs. Second, we explored different HM/FM/NM combinations, in order to study different interfaces. And third, we changed the properties of the interfaces by changing the crystallographic structure of the interface and by oxidation. The measurement technique and associated data analysis method, as well as the theoretical considerations needed for the interpretation of the results are also detailed in this manuscript.