Parasitic inductance in power modules generates voltage spikes and current ringing during switching which cause extra stress in power electronic devices, increase electromagnetic interference (EMI), and degrade the performance of the power converter system. As newer power devices have faster switching speeds and higher power ratings, the effect of the parasitic inductance of the power module is more pronounced. This dissertation proposes a novel packaging method for power electronics modules based on the concepts of novel switching cells: P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior. Taking an insulated gate bipolar transistor (IGBT) as an example, two phase-leg modules, specifically a conventional module and a P-cell and N-cell based module were designed. Using Ansoft Q3D Extractor, electromagnetic simulation was carried out to extract the stray inductance from the two modules. An ABB 1200 V / 75 A IGBT model and a diode model were built for simulation study. Circuit parasitics were extracted and modeled. Switching behavior with different package parasitics was studied based on the Saber simulation. Two prototype phase-leg modules were fabricated. The parasitics were measured using a precision impedance analyzer. The measurement results agree with the simulation very well. A double pulse tester was built in laboratory. Several approaches were used to reduce the circuit and measuring parasitics. From the switching characteristics of the two modules, it was verified that the larger stray inductance in the layout causes higher voltage overshoot during turn off, which in turn increases the turn off losses. Multichip (two in parallel) IGBT modules applying novel switching cells was also designed. The parasitics were extracted and compared to a conventional design. The overall loop inductance was reduced in the proposed module. However, the mismatch of the paralleled branches was larger.

Les principaux critères de comparaison des convertisseurs sont le rendement, la masse, le volume, le coût et la fiabilité. Le contexte environnemental et économique et le développement des applications nomades ouvrent à l’électronique de puissance un domaine d’application de plus en plus vaste. Mais pour imposer cette technologie, il faut sans cesse améliorer ces performances et les compromis entre celles qui sont antagonistes (augmentation du rendement et diminution de la masse par exemple…) ce qui amène naturellement à la problématique de conception et d’optimisation. Le cas spécifique de l’aéronautique n’échappe pas à la règle et les contraintes y semblent encore plus fortes. La réduction de la masse, du volume et l’augmentation du rendement et de la fiabilité sont parmi les défis principaux actuels, et la transition de systèmes hydrauliques ou pneumatique vers des systèmes électriques laisse espérer à une amélioration des performances globales de l’avion. Les architectures des convertisseurs sont un moyen efficace d’améliorer les convertisseurs parce qu’ils permettent de réduire les contraintes au sein des convertisseurs tout en améliorant les formes d’onde en entrée et/ou en sortie. Parallèlement, les composants classiques en silicium ont bénéficié de larges avancés au cours de ces dernières décennies et approchent de leurs limites théoriques. Pour espérer une amélioration, des technologies en rupture sont désormais nécessaires. Au cours de ces dernières années, les technologies de semi-conducteurs dit « à grand gap », essentiellement à base de Nitrure de Gallium ou de Carbure de Silicium (resp. GaN et SiC) se sont considérablement amélioré et sont d’ores et déjà plus performant que les composants Si dans de nombreux cas. Les semi-conducteurs étant généralement plus performants lorsqu’ils ont une tenue en tension plus faible, on envisage ici de cumuler plusieurs avantages en envisageant la mise en série de composants GaN basse-tension pour améliorer l’intégration des convertisseurs de puissance. Dans un premier temps, un convertisseur multi-niveaux élémentaire de type Flying Capacitor (FlyCap) est mis en oeuvre. Des condensateurs de puissance intégrés sont utilisés, ce qui pourrait permettre de réduire l’empreinte de ces composants et de proposer une dissipation thermique commune par le dessus des composants. L’utilisation de composant au temps de commutation réduit est critique pour la fiabilité des convertisseurs. Une étude de l’influence des paramètres physique du circuit électrique sur les inductances parasites de la maille de puissance et de commande est menée permettant de mettre en évidence des règles de conception dans le but d’améliorer la fiabilité des convertisseurs. Dans un second temps, l’équilibrage dynamique de la topologie FlyCap qui est critique pour les formes d’onde et la sureté de fonctionnement est étudié. La prise en compte des pertes dans les semi-conducteurs permet d’améliorer l’estimation de la dynamique d’équilibrage. Une base de réflexion sur le dimensionnement d’un équilibreur passif est également proposée pour optimiser sa dynamique et les pertes associées. Un prototype expérimental à 5 cellules de commutation est présenté permettant d’atteindre une tension d’entrée de 270 V avec des composants 100V. / Performance, weight, volume, cost and reliability are key criteria to compare converters. Environment and economical context and the development of mobile applications lead electronics to have a wider field of application. Improving performances and tradeoff between conflicting characteristics (high efficiency and reduced weight for example) is thus constantly needed to impose this technology, which calls for design and optimization methods and tools. The specific case of aeronautics is no exception and there is in this field a high demand. Mass and volume reduction, efficiency and reliability improvement is one of the most important challenges, and the change from hydraulic and pneumatic systems to electric systems is expected to allow a global improvement of aircraft performances. Converter’s topology is a good candidate to improve and reduce the size of converters because it can reduce stress while improving the input and/or output waveforms. Meanwhile, conventional silicon components have taken advantage of wide advances in recent decades and are now close to their theoretical limits. To hope for a significant improvement, breaking technologies are now needed. In recent years, GaN and SiC Wide Band Gap semiconductors have seen significant development and are already often better than Si power devices. Lowvoltage semiconductors are generally better than higher voltage ones. Thus, we consider here cumulating advantages with a serial arrangement of low voltage GaN semi-conductors to improve power converter’s integration. First, a basic multilevel Flying Capacitor GaN-based converter is implemented. The integration of power capacitors is proposed to evaluate this technology, which could reduce the footprint of these components and could allow a common heatsink dissipation through the top of the components. Very fast turn-on and turn-off of GaN devices is critical for safe operation due to parasitic inductances. A study of physical parameters of the electrical circuit on parasitic inductances of power and control loop is conducted to lay down design rules in order to improve the reliability of converters. Secondly, dynamic balancing of Flying Capacitor which is critical for the waveforms and reliability is studied. Semi-conductor’s losses are considered to improve the estimation of dynamic balancing. A method for the design of a passive balancer is also proposed to optimize the balancing and associated losses. An experimental prototype with 5 switching cells is presented to achieve an input voltage of 270 V with 100 V rated voltage devices.

The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in high-power-density converters. Many challenges are present, and some of the most important issues are explored in this dissertation. First of all, the high-temperature performances of the commercial SiC MOSFET are evaluated extensively up to 200 degree C. The static and switching characterizations show that the device has superior electrical performances under elevated temperatures. Meanwhile, the gate oxide stability of the device - a known issue to SiC MOSFETs in general - is also evaluated through both high-temperature gate biasing and gate switching tests. Device degradations are observed from these tests, and a design trade-off between the performance and reliability of the SiC MOSFET is concluded. To understand the interactions between devices and circuit parasitics, an experimental parametric study is performed to investigate the influences of stray inductances on the MOSFETs switching waveforms. A small-signal model is then developed to explain the parasitic ringing in the frequency domain. From this angle, the ringing mechanism can be understood more easily and deeply. With the use of this model, the effects of DC decoupling capacitors in suppressing the ringing can be further explained in a more straightforward way than the traditional time-domain analysis. A rule of thumb regarding the capacitance selection is also derived. A Power Electronics Building Block (PEBB) module is then developed with discrete SiC MOSFETs. Integrating the power stage together with the peripheral functions such as gate drive and protection, the PEBB concept allows the converter to be built quickly and reliably by simply connecting several PEBB modules. The high-speed gate drive and power stage layout designs are presented to enable fast and safe switching of the SiC MOSFET. Based on the PEBB platform, the state-of-the-art Si and SiC power MOSFETs are also compared in the device characteristics, temperature influences, and loss distributions in a high-frequency converter, so that special design considerations can be concluded for the SiC MOSFET. Towards high-temperature, high-frequency and high-power operations, integrated wire-bond phase-leg modules are also developed with SiC MOSFET bare dice. High-temperature packaging materials are carefully selected based on an extensive literature survey. The design considerations of improved substrate layout, laminated bus bars, and embedded decoupling capacitors are all discussed in detail, and are verified through a modeling and simulation approach in the design stage. The 200 degree C, 100 kHz continuous operation is demonstrated on the fabricated module. Through the comparison with a commercial SiC phase-leg module designed in the traditional way, it is also shown that the design considerations proposed in this work allow the SiC devices in the wire-bond structure to be switched twice as fast with only one-third of the parasitic ringing. To further push the performance of SiC power modules, a novel hybrid packaging technology is developed which combines the small parasitics and footprint of a planar module with the easy fabrication of a wire-bond module. The original concept is demonstrated on a high-temperature rectifier module with SiC JFET. A modified structure is then proposed to further improve design flexibility and simplify module fabrication. The SiC MOSFET phase-leg module built in this structure successfully reaches the switching speed limit of the device almost without any parasitic ringing. Finally, a new switching loop snubber circuit is proposed to damp the parasitic ringing through magnetic coupling without affecting either conduction or switching losses of the device. The concept is analyzed theoretically and verified experimentally. The initial integration of such a circuit into the power module is presented, and possible improvements are proposed. / Ph. D.

Le véhicule électrique (VE) s'inscrit actuellement dans un contexte industriel fortement corrélé aux contraintes environnementales. Un tel contexte où la minimisation des coûts est également vitale impose par conséquent des contraintes de développement et de réalisation. Les modules de puissance constituent un coût conséquent dans un système de conversion pour l'automobile. Nous nous plaçons dans le contexte des modules de puissance à IGBT en technologie silicium qui assurent les fonctions de conversion d’énergie (AC/DC ou DC/AC) pour des applications moyennes et fortes puissances. L’un des points les plus limitant de ces modules est l’aspect inductif de la maille de commutation. L’intégration de condensateurs de découplage (Ceq) au sein du module permet de réduire les effets des inductances parasites car ils offrent un chemin à basse impédance au courant commuté et augmentent la vitesse de commutation du composant. C’est cette solution que nous avons étudiée. Le but est de démontrer la faisabilité d’une telle solution couplée avec le choix optimal de la résistance de grille (Rg) des puces IGBT. Nous avons établi des règles de conception permettant la construction de modèles circuit d’un bras d’onduleur permettant l’intégration de fonction de découplage. Ce dernier nous a permis dans un premier temps de réduire les surtensions aux bornes des composants mais les pertes par commutation n’ont pas pu être améliorées significativement en comparaison à un module conventionnel. La démarche suivie pour aller plus loin a consisté à chercher un compromis entre les valeurs des condensateurs distribués dans le module et le choix des résistances de grille des puces IGBT. L’optimisation par algorithmes génétiques est la solution qui a été trouvée pour contourner les problèmes bloquants et améliorer significativement les performances du module. / Modern converter concepts demand increasing energy efficiency and flexibility in de-sign and construction. Considering that the dependency of the switching losses on various factors such as the switching voltage, switching current, stray inductance (Lstray) and the reverse recovery process of the freewheeling diode, various concepts have been developed to decrease power modules stray inductance for the purpose of loss reduction but with risk of exceeding the maximum rated blocking voltage. However, considering practical design requirement, lower stray inductance is not necessarily beneficial for the system. This leads to the question of tolerable size of parasitic inductance and best dI/di and dv/dt rate for low commutation losses and low voltage spikes. In this thesis, design methodology for a low inductive, Modern converter concepts demand increasing energy efficiency and flexibility in de-sign and construction. Considering that the dependency of the switching losses on various factors such as the switching voltage, switching current, stray inductance (Lstray) and the reverse recovery process of the freewheeling diode, various concepts have been developed to decrease power modules stray inductance for the purpose of loss reduction but with risk of exceeding the maximum rated blocking voltage. However, considering practical design requirement, lower stray inductance is not necessarily beneficial for the system. This leads to the question of tolerable size of parasitic inductance and best dI/di and dv/dt rate for low commutation losses and low voltage spikes. In this thesis, design methodology for a low inductive,

Wound Field Synchronous Generators provide more than 95% of the electricity need worldwide. Their primacy in electricity production is due to ease of voltage regulation, performed by simply adjusting the direct current intensity in their rotor winding. Nevertheless, the rapid progress of power electronics devices enables new possibilities for alternating current add-ins in a more than a century long DC dominated technology. Damping the rotor oscillations with less energy loss than before, reducing the wear of the bearings by actively compensating for the mechanic unbalance of the rotating parts, speeding up the generator with no need for additional means, these are just few of the new applications which imply partial or total alternated current supplying of the rotor winding. This thesis explores what happens in a winding traditionally designed for the direct current supply when an alternated current is injected into it by an inverter. The research focuses on wound field salient pole synchronous machines and investigates the changes in the field winding parameters under AC conditions. Particular attention is dedicated to the potentially harmful voltage surges and voltage gradients triggered by voltage-edges with large slew rate. For this study a wide frequency band simplified electromagnetic model of the field winding has been carried out, experimentally determined and validated. Within the specific application of the fast field current control, the research provides some references for the design of the rotor magnetic circuit and of the field winding. Finally the coordination between the power electronics and the field winding properties is addressed, when the current control is done by means of a long cable or busbars, in order to prevent or reduce the ringing.