Abstract In this thesis, we propose a new geometrical structure of waveguide for the application of traveling-wave electroabsorption modulator (TWEAM). As approaching to high-speed performance in TWEAM, low parasitic capacitance in the waveguide is necessary to get good microwave propagation properties. In this work, a novel processing called two-step undercut-etching the active region (UEAR) is developed to reduce the parasitic capacitance. First of all, Beam Propagation Method (BPM) is used to calculate this 2-D structure optical modes ensuring the guiding capability in such kind of waveguides. Based on an equivalent circuit model, the microwave propagation on different structures of waveguide is then investigated to decide the UEAR waveguide structure. By the selectively etching solution on InP/InGaAsP, the processing by two-step UEAR is developed to reduce the parasitic capacitance in the waveguide core. H3PO4:HCl is used to selectively etch P-InP layer on the top of InGaAsP M.Q.W. (multiple quantum wells, active region). H3PO4:H2O2:H2O is subsequently and selectively remove InGaAsP M.Q.W.s to define the waveguide core. This processing has been successfully developed. The electrical transmission measurement on this kind of TWEAM shows low reflection S11 of < -17.5dB and a low insertion loss S21 of < ¡V2.7dB from D.C. to 40GHz, indicating high microwave performance on such two-step UEAR waveguide can be achieved due to the low parasitic capacitance.

Cette thèse porte principalement sur la caractérisation électrique et la modélisation physique d'éléments mémoires émergents de type OxRRAM (Oxide Resistive Random Access Memory) intégrant soit un oxyde de nickel, soit un oxyde de hafnium. Une fois la maturité technologique atteinte, ce concept de mémoire est susceptible de remplacer la technologie Flash qui fait encore figure de référence. Les principaux avantages de la technologie OxRRAM reposent sur une très bonne compatibilité avec les filières CMOS, un faible nombre d'étapes de fabrication, une grande densité d'intégration et des performances attractives en termes de fonctionnement. Le premier objectif de ce travail concerne le diélectrique employé dans les cellules. Il s'agit d'apporter des éléments factuels permettant d'orienter un choix technologique sur la méthode d'élaboration de l'oxyde de nickel (oxydation thermique ou pulvérisation cathodique réactive) puis d'évaluer les performances de cellules à base d'oyxde de hafnium. Le second objectif est d'approfondir la compréhension des mécanismes physiques responsables du changement de résistance des dispositifs mémoire par une approche de modélisation physique des phénomènes opérant lors des phases d'écriture et d'effacement, sujet encore largement débattu dans la communauté scientifique. Le troisième objectif de cette thèse est d'évaluer, par le biais de caractérisations électriques, les phénomènes parasites intervenant dans les éléments mémoires de type 1R (élément résistif sans dispositif d'adressage) et, en particulier, la décharge capacitive apparaissant lors de leur programmation (opérations d'écriture). / This work is focused on the electrical characterization and physical modeling of emerging OxRRAM memories (Oxide Resistive Random Access Memory) integrating nickel or hafnium oxide. After reaching maturity, this memory concept is likely to replace the Flash technology which is still a standard in the CMOS industry. The main advantages of resistive memories technology is their good compatibility with CMOS processes, a small number of manufacturing steps, a high integration density and their attractive performances in terms of memory operation. The first objective of this thesis is to provide enough informations allowing to orientate the elaboration process of the active nickel oxide layer (thermal oxidation, reactive sputtering) then to compare the performances of the fabricated cells with devices featuring a hafnium oxide layer. The second objective is to understand the physical mechanisms responsible of the device resistance change. A physical model is proposed allowing to apprehend SET and RESET phenomenon in memory devices, subject which is still widely debated in the scientific community. The third objective of this thesis is to evaluate electrical parasitic phenomenon observed in 1R-type memory elements (resistive element without addressing device), in particular the parasitic capacitance appearing during cell programming (writing operation).

Les dispositifs DBD se répandent dans un grand nombre d’applications industrielles. Utilisés depuis plus de 150 ans pour la production d’ozone afin de décontaminer l’eau à grande échelle, ils ont depuis la fin du XXème siècle investi les domaines du traitement de surface polymère, du dépôt de couche mince sur substrat et de l’émission lumineuse pour la décontamination ainsi que la médecine. Ces dispositifs sont mis en oeuvre avec un générateur électrique dont les caractéristiques impactent fortement la qualité de la décharge. Ce travail s’inscrit en partie dans le cadre du développement d’une application de traitement de surface à pression atmosphérique. Il aborde la problématique de l’augmentation de la vitesse de dépôt de couche mince au travers des paramètres de l’alimentation électrique. Plus précisément, ce travail s’intéresse aux apports d’une alimentation en courant rectangulaire et aborde également les problématiques liées à la conception et à la fabrication de ce convertisseur. En particulier, une grande attention est portée sur l’étude du transformateur élévateur, car au travers de ses éléments parasites capacitifs, ce dernier peut limiter le transfert de puissance entre la source électrique et le dispositif DBD. Un deuxième aspect de cette étude consiste à entrevoir l’intérêt que revêtent deux convertisseurs statiques dédiés à l’alimentation de dispositifs DBD. Le premier consiste en une alimentation résonante en régime de conduction discontinue dont la particularité est de posséder trois degrés de liberté (fréquence, tension d’entrée et largeur d’impulsion), ce qui lui confère un intérêt exploratoire. Le second convertisseur consiste en une alimentation résonante haute tension et haute fréquence permettant l’éviction du transformateur élévateur, et mettant en oeuvre des interrupteurs au nitrure de gallium (GaN) afin d’atteindre une fréquence de fonctionnement supérieure au mega-Hertz avec un faible niveau de pertes. / DBD devices are widely used in industrial applications. 150 years ago, they were only employed in ozoners for water decontamination. In recent decades, the progress of knowledge and technology allowed to use them in many other applications like surface treatment, medical applications and light emission. Actually, these devices are supplied with an electrical source which parameters can strongly impact the discharge behaviour. An important part of this work comes within the framework of the development of an atmospheric pressure surface treatment involving DBDs. The issue of the influence of the generator's electrical parameters on the treatment speed is discussed. In particular, this work focuses on the merits of a rectangular shaped current source concerning the behavior of an atmospheric pressure discharge in nitrogen ; the problems related to the design and the fabrication of such a converter are highlighted. The design of the high voltage transformer is then described in detail since its lumped elements play an important role as they can strongly limit the power transfer between the electrical source and the DBD device. A second aspect of this work is to establish the interests of two particular power converters. The first one is a resonant converter operating in a discontinuous conduction mode ; its merits is to exhibit three degrees of freedom (input voltage, frequency, current pulse width) instead of two, which is a tremendous asset for exploring purposes. The second one is a high-frequency resonant converter where a resonant inductance and the DBD device structural capacitances are used instead of a high voltage transformer to perform the voltage amplification, which circumvents the issue related to the transformer parasitic elements. This converter is based on GaN HEMT switches in order to reach a low semiconductor losses level and a fairly high operating frequency (above the mega-Hertz).

Les composants magnétiques en technologie planar répondent aux exigences actuelles de l’Electronique de Puissance (EP), à savoir la montée en fréquence de commutation des structures d’EP et la réduction du volume des convertisseurs. La première tendance impose des contraintes fortes en termes de compatibilité électromagnétique (CEM) des équipements. Ces dernières doivent être prises en compte par les ingénieurs dès la phase conception des convertisseurs en se basant sur des modèles fiables, peu développés pour les composants planar dans la littérature scientifique. Ce travail de thèse porte ainsi sur la modélisation des composants planar pour applications aux filtres CEM. Différentes méthodes sont développées au cours de cette thèse pour arriver à évaluer de manière fine les éléments parasites des inductances planar de mode commun : capacités parasites et inductances de fuite. Une partie du travail a porté sur la modélisation par circuits équivalents du comportement fréquentiel des inductances de MC. Une approche automatisée, basée sur un algorithme de fitting a ainsi été développée pour élaborer des circuits équivalents fiables et robustes. Des approches analytiques (Décomposition du Champ Electrique) et semi-analytiques (Fonctions de Green) ont aussi été proposées pour évaluer les valeurs des éléments parasites. La dernière partie de la thèse est plus orientée conception, avec la réalisation de deux structures de composants innovantes, la première se basant sur une technique de compensation des capacités parasites à l’aide d’éléments parasites structuraux et la seconde sur l’association de deux noyaux magnétiques, possédant matériaux et géométries différentes / The magnetic components with planar technology join in the current trends in Power Electronics (PE), namely increasing the switching frequency of PE structures and reducing the size of the power converters. The first tendency imposes strong constraints in terms of electromagnetic compatibility of equipments. The latter has to be considered by engineers at the beginning of the design of Power converters on the basis of reliable models, which are not sufficiently developed for planar components in scientific literature. This PhD work thereby focuses on the modeling of planar components for the applications of EMI filters. Different methods are developed during this study in order to accurately evaluate the parasitic elements of planar common-mode chokes: parasitic capacitances and leakage inductances. A part of this dissertation concerns the equivalent circuit modeling of the frequency behavior of CM chokes. An automated approach, based on a fitting algorithm developed for elaborating reliable and robust equivalent circuits. Analytical approaches (Electric Field Decomposition) and semi-analytical (Green’s Function) are proposed as well for calculating the values of these parasitic elements. The last part of this dissertation is oriented to conception, with the realization of two structures of innovative components, the first one based on a parasitic capacitance cancellation technique using structural parasitic elements and the second one on the association of two magnetic cores with different materials and geometries

Wound Field Synchronous Generators provide more than 95% of the electricity need worldwide. Their primacy in electricity production is due to ease of voltage regulation, performed by simply adjusting the direct current intensity in their rotor winding. Nevertheless, the rapid progress of power electronics devices enables new possibilities for alternating current add-ins in a more than a century long DC dominated technology. Damping the rotor oscillations with less energy loss than before, reducing the wear of the bearings by actively compensating for the mechanic unbalance of the rotating parts, speeding up the generator with no need for additional means, these are just few of the new applications which imply partial or total alternated current supplying of the rotor winding. This thesis explores what happens in a winding traditionally designed for the direct current supply when an alternated current is injected into it by an inverter. The research focuses on wound field salient pole synchronous machines and investigates the changes in the field winding parameters under AC conditions. Particular attention is dedicated to the potentially harmful voltage surges and voltage gradients triggered by voltage-edges with large slew rate. For this study a wide frequency band simplified electromagnetic model of the field winding has been carried out, experimentally determined and validated. Within the specific application of the fast field current control, the research provides some references for the design of the rotor magnetic circuit and of the field winding. Finally the coordination between the power electronics and the field winding properties is addressed, when the current control is done by means of a long cable or busbars, in order to prevent or reduce the ringing.

<p dir="ltr">The short lifespan of capacitors in power electronics converters is a significant challenge. These capacitors, often electrolytic, are vital for voltage smoothing and frequency filtering. However, their susceptibility to heat, ripple current, and aging can lead to premature faults. This can cause issues like output voltage instability and short circuits, ultimately resulting in catastrophic failure and system shutdown. Capacitors are responsible for 30% of power electronics failures.</p><p dir="ltr">To tackle this challenge, scientists, researchers, and engineers are exploring various approaches detailed in technical literature. These include exploring alternative capacitor technologies, implementing active and passive cooling solutions, and developing advanced monitoring techniques to predict and prevent failures. However, these solutions often come with drawbacks such as increased complexity, reduced efficiency, or higher upfront costs. Additionally, research in material science is ongoing to develop corrosion-resistant capacitors, but such devices are not readily available.</p><p dir="ltr">This dissertation presents a capacitorless solution for dc-dc and dc-ac converters. The proposed solution involves harnessing parasitic elements and integrating them as intrinsic components in power converter technology. This approach holds the promise of enhancing power electronics reliability ratings, thereby facilitating breakthroughs in electric vehicles, compact power processing units, and renewable energy systems. The central scientific premise of this proposal is that the capacitance requirement in a power converter can be met by deliberately augmenting parasitic components.</p><p dir="ltr">Our research hypothesis that incorporating high dielectric material-based thin-films, fabricated using nanotechnology, into planar magnetics will enable the development of a family of capacitorless electronic converters that do not rely on discrete capacitors. This innovative approach represents a departure from the traditional power converter schemes employed in industry.</p><p dir="ltr">The first family of converters introduces a novel capacitorless solid-state power filter (SSPF) for single-phase dc-ac converters. The proposed configuration, comprising a planar transformer and an H-bridge converter operating at high frequency, generates sinusoidal ac voltage without relying on capacitors. Another innovative dc-ac inverter design is the twelve step six-level inverter, which does not incorporate capacitors in its structure.</p><p dir="ltr">The second family of capacitorless topologies consists of non-isolated dc-dc converters, namely the buck converter and the buck-boost converter. These converters utilize alternative materials with high dielectric constants, such as calcium copper titanate (CCTO), to intentionally enhance specific parasitic components, notably inter capacitance. This innovative approach reduces reliance on external discrete capacitors and facilitates the development of highly reliable converters.</p><p dir="ltr">The study also includes detailed discussions on the necessary design specifications for these parasitic capacitors. Furthermore, comprehensive finite element analysis solutions and detailed circuit models are provided. A design example is presented to demonstrate the practical application of the proposed concept in electric vehicle (EV) low voltage side dc-dc power converters used to supply EVs low voltage loads.</p>