京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19735号 / 工博第4190号 / 新制||工||1646(附属図書館) / 32771 / 京都大学大学院工学研究科物質エネルギー化学専攻 / (主査)教授 陰山 洋, 教授 安部 武志, 教授 阿部 竜 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

京都大学 / 0048 / 新制・課程博士 / 博士(人間・環境学) / 甲第20475号 / 人博第825号 / 新制||人||197(附属図書館) / 28||人博||825(吉田南総合図書館) / 京都大学大学院人間・環境学研究科相関環境学専攻 / (主査)教授 吉田 寿雄, 教授 内本 喜晴, 教授 田部 勢津久, 教授 加藤 立久 / 学位規則第4条第1項該当 / Doctor of Human and Environmental Studies / Kyoto University / DFAM

京都大学 / 新制・課程博士 / 博士(医学) / 甲第24479号 / 医博第4921号 / 新制||医||1062(附属図書館) / 京都大学大学院医学研究科医学専攻 / (主査)教授 安達 泰治, 教授 別所 和久, 教授 長尾 美紀 / 学位規則第4条第1項該当 / Doctor of Medical Science / Kyoto University / DFAM

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Ferroelectric and piezoelectric ceramic reinforced metal matrix composites are new materials being explored for vibration damping purposes. The high damping ability of ferroelectric and piezoelectric ceramics such as barium titanate (BaTiO3) and lead zirconate titanate (PZT) is due to the anelastic response of ferroelastic domain walls to applied external stress. In piezoelectric ceramics, vibration energy can also be dissipated through the direct piezoelectric effect if the appropriate electric circuit is connected across the ceramic. In this work we have examined the vibration damping behavior of BaTiO3, nickel-barium titanate (Ni-BaTiO3) composites and nickel-lead zirconate titanate (Ni-PZT) composites. BaTiO3 ceramics were fabricated by a combination of uniaxial pressing and cold isostatic pressing followed by sintering in air. Low frequency (0.1Hz-10Hz) damping capacity of BaTiO3, tanδ has been measured in three-point bend configuration on a dynamic mechanical analyzer. Tanδ has been found to increase with temperature up to the Curie temperature (Tc) of BaTiO3, after which there was a drop in damping capacity values due to the disappearance of ferroelectric domains above Tc. Furthermore within the frequency range tested, tanδ has been found to decrease with increasing vibration frequency. We also observed that tanδ decays with the number of vibration cycles (N). The decrease in tanδ with N, however, is fully recovered if BaTiO3 is heated above the Tc. Ni-BaTiO3 composite composed of a layer of BaTiO3 ceramic sandwiched between two layers of Ni were fabricated using a combination of electroless plating and electroforming. The damping behavior of the composite was analyzed in terms of the damping mechanisms below Tc and the damping mechanisms above Tc of BaTiO3. Below Tc, vibration damping ability of the composite was highly influenced by ferroelastic damping in the BaTiO3 component. Above the Curie temperature, the damping capacity was influence more by the inherent damping mechanisms in the nickel matrix. The damping mechanisms in Ni-PZT composites were evaluated at a low vibration frequency of 1Hz. In these composites we identified ferroelastic domain wall motion as the main damping mechanism active below the Tc of PZT. Using a poled PZT ceramic enhanced the damping capacity of the composite because of favorable ferroelastic domain orientation in the direction of applied stress. Based on our experimental results, we found no evidence of a direct piezoelectric damping mechanism in the Ni-PZT composites. / Ph. D.

Undoped and doped Pb(Zr_xTi_1-x)O₃, i. e. PZT, ferroelectric thin films were prepared by chemical solution deposition and spin-coating method. The precursors for making the undoped PZT films were derived from lead acetate, zirconium n-propoxide, and titanium iso-propoxide. In addition, lanthanum acetylacetonate, neodymium acetate, and niobium ethoxide were introduced into the precursor solution to accomplish doping of the corresponding elements. Both doped and undoped PZT films were coated onto Pt/Ti/SiO₂/Si, RuO_x and single-crystal sapphire substrates of various thickness and annealed at a range of temperatures and times. The effects of dopants were studied in terms of the Curie temperature, crystal distortion, transformation temperature, microstructure, optical properties, and electrical properties. In addition to the dopant effect, the effects of substrates were also investigated with regard to crystallization and preferred orientation. The Curie temperature of the doped and undoped PZT films was determined by in-situ hot-stage transmission electron microscope (TEM) and compared with those of bulk ceramics. Lattice distortion and phase transformation were determined by x-ray diffraction (XRD). Microstructure of the films was characterized by using optical microscopy, scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM). Optical properties were characterized by a UV-VIS-NIR scanning spectrophotometer and electrical properties and fatigue testing were measured on a standardized RT66A using a Virtual-Ground circuit. It was observed that the addition of Nd and La dopants tends to enhance perovskite phase formation and improve electrical properties of PZT films. Higher refractive indices in La and Nd-doped PZT films imply that packing densities of PZT films are improved by adding dopants. Furthermore, the lower leakage currents and improved fatigue properties in PZT films were also observed by the addition of Nb dopants. / Master of Science

Metal matrix composites offer unique opportunities for achieving multi-functionality in materials. In an attempt to investigate the possibility of enhancing damping characteristics of structural metals, copper was reinforced with tetragonal ferroelectric BaTiO3 particulates (Cu-BaTiO3 composites) using powder metallurgy techniques. The effect of particulate size and three processing conditions, sintering atmosphere, cooling rate and, uniaxial compaction pressure on the tetragonality and hence the ferroelectric properties of barium titanate powder were investigated using differential scanning calorimetry (DSC) and x-ray diffraction (XRD). The results show that sintering atmosphere and cooling rates have little effect on the tetragonality of barium titanate powder. Tetragonality of barium titanate powder decreased gradually with decreasing particle size. The decrease in tetragonality with decreasing particle size, however, was only severe in the very fine powders. Although no direct relationship was found between uniaxial compaction pressure and tetragonality, uniaxial pressure may also decrease the tetragonality of barium titanate. Three Cu-BaTiO3 composites, D1, D2 and D3 reinforced with 40vol% barium titanate particles of average sizes 209μm, 66μm and 2μm were respectively fabricated. The retention of the ferroelectric tetragonal phase of barium titanate after composite processing was confirmed by DSC. Composite microstructures observed using optical and scanning electron microscopy revealed uniform dispersions of barium titanate particles in D1 and D2. In D3, the barium titanate formed a chain-like structure because of extensive agglomeration of the fine reinforcement particles. Damping characteristics of the composites were evaluated between 25oC and 165oC at a frequency of 1Hz using dynamic mechanical analysis (DMA). The relative damping capacities (tanδ) in the composites were higher than the unreinforced metal. The damping capacity of composites D1 and D2 was also found to be dependent on temperature. Damping capacity was high from room temperature up to the Curie point of barium titanate, after which there was a slight drop in damping values probably due to a loss in ferroelectric properties. The small drop in damping values recorded in excess of the Curie temperature is an indication that ferroelectricity contributes little to the overall damping capacity of the Cu-BaTiO3 composites. This results from either a reduced ferroelectric damping in barium titanate particles or, poor stress transfer from matrix to reinforcement because of the weak and porous copper-barium titanate interface. / Master of Science

Cette thèse se décompose en deux parties.Dans la première, nous nous intéressons au premier champ critique, Hc1, du titanate de strontium, que nous mesurons à l’aide d’un réseau de microsondes de Hall taillées dans un gaz bidimensionnel. La valeur du premier champ critique nous permet alors d’évaluer la densité superfluide à six différents dopages couvrant l’ensemble du dôme supraconducteur. À bas dopage, nous trouvons que celle-ci correspond à la densité de porteurs dans l’état normal tandis qu’au-delà du dopage optimal, celle-ci chute drastiquement. En plaçant nos résultats dans le contexte de la loi de Homes, nous voyons que cette chute s’explique par l’entrée dans la limite sale. Un fit multibande de Hc1(T), dans ce contexte semble également indiquer que la supraconductivité émerge de la bande la plus basse et est seulement induite dans les deux autres bandes.Dans la seconde partie, nous regardons l’évolution de la densité de porteurs, n, du cuprate Nd-LSCO. Nous mesurons ainsi six échantillons de dopages proches du point critique pseudogap, p*, via trois sondes de transport : effet Hall, résistivité et effet Seebeck. Nous trouvons que n chute de 1+p à p à l’entrée dans la phase pseudogap. En comparant les différentes sondes, nous montrons que cette chute est due à une reconstruction de la surface de Fermi et qu’il existe sûrement des poches d’électrons et de trous juste en dessous de p*. Ceci est en accord, entre autres, avec un scénario antiferromagnétique. Finalement, nous trouvons que la mobilité est inchangée à l’entrée dans la phase pseudogap et que les mesures de transports semblent insensibles à la divergence de la masse effective vue par chaleur spécifique. / This thesis consists of two parts.The first one is about the lower critical field of strontium titanate, measured thanks to an array of Hall micro-probes tailored in a 2D electron gas. The value of the lower critical field allows us to quantify superfluid density at six different dopings spreading all along the superconducting dome. At low doping, we find that it follows the normal state carrier density while it dramatically falls above optimal doping. Analyzing our results in the context of the Homes law, we understand that this drop is due to the entering into the dirty limit. A multiband fit Hc1(T) in this context seems to indicate that superconductivity is born in the lowest band and only induced in the two others.In the second part, we focus on the carrier density, n, of the cuprate Nd-LSCO. We measure six samples with doping close to the pseudogap critical point p*, thanks to three different transport probes : Hall effect, resistivity and Seebeck effect. We find that entering the pseudogap phase induces a drop in n from 1+p to p. The comparison of the different probes shows that this drop is due to a Fermi surface reconstruction and that both holes and electrons pockets may exist just under p*. This observation is consistent with an antiferromagnetic scenario. Finally, we find that mobility is not affected by the pseudogap and that transport measurements seems insensitive to the diverging effective mass as observed by specific heat.

Das Konzept neuartiger, resistiv schaltender Langzeitspeicherzellen sieht eine enorme Erhöhung der Speicherdichte bei gleichzeitig geringem Energieverbrauch und hoher Skalierbarkeit vor. In diesem Zusammenhang sind unterschiedlichste Übergangsmetalloxide Gegenstand der aktuellen Forschung, die zwischen Metallelektroden in einer Metall-Isolator-Metall-Struktur eingebettet sind. Ein anerkanntes Modell zur Klärung der lokalen Struktur innerhalb des Schaltmechanismus beschreibt die Änderung des resistiven Zustandes in der wechselnden Ausbildung und Auflösung eines leitfähigen Pfades in der Oxidschicht, der beide Elektroden miteinander verbindet. Die vorliegende Arbeit befasst sich auf dieser Grundlage mit der Untersuchung solcher Speicherzellen, wobei anhand der gewählten Elektrodenmaterialien Speichereffekte rein auf Änderungen im Oxid zurückzuführen sind. Die sich daraus ergebende Möglichkeit der gezielten Änderung des efekthaushaltes und des resistiven Schaltverhaltens der Oxidschichten durch deren Ausheizung oder Modifikation mittels Ionenimplantation stand im Fokus der Arbeit. Dementsprechend muss für eine genaue Lokalisierung des Schaltmechanismus die gewählte Oxidstruktur nicht nur genauestens bekannt, sondern auch möglichst rein sein. Zur Vereinigung all diese Faktoren wird das Modellsystem SrO-TiO2 mit den beiden Vertretern TiO2 und SrTiO3 untersucht, da seine Eigenschaften in der Literatur bereits rege diskutiert wurden. Zur Gewährleistung der Reinheit der Schichten wird die Herstellung der Isolatorschichten durch Atomlagenabscheidung eingesetzt und deren Optimierung, sowie Schichtcharakterisierung im ersten Teil der Arbeit vorgestellt. Mittels einer Vielzahl optischer und struktureller Analysemethoden lassen sich definierte Rückschlüsse über die Eigenschaften der Oxide ziehen. Sämtliche Veröffentlichungen zur Herstellung von SrTiO3 mittels Atomlagenabscheidung beziehen sich entweder auf eigens hergestellte Anlagensysteme oder Präkursormaterialien, wodurch die Schichten industriell nicht reproduzierbar sind. Eines der Ergebnisse der vorliegenden Arbeit ermöglicht eben dies durch die erstmalige Kombination einer kommerziell erhältlichen Anlage mit kommerziellen Präkursormaterialien. Nach deren Optimierung werden die Oxidschichten zwischen den beiden Metallelektroden Au und TiN integriert und die daraus resultierenden Speicherzellen elektrisch charakterisiert. Es kann bipolares, nichtflüchtiges, resistives Schaltverhalten in amorphen und ex situ kristallisierten Oxiden nachgewiesen werden. Anhand von Struktur-Eigenschaft-Korrelationen gelingt es, die Leitungsmechanismen in den untersuchten Speicherzellen als Schottky-Emission und bei ausreichend hohen Spannungen als volumendominierte Poole-Frenkel-Emission zu charakterisieren. Bei den dafür notwendigen Defekten handelt es sich um flache Donatorzustände. Die Annahme des resistiven Schaltens über einen reversiblen leitfähigen Pfad basierend auf Defektzuständen wird durch die Änderung der Coulomb-Barrierenhöhe bei konstanter Schottky-Barrierenhöhe innerhalb derselben Mikrostruktur bestätigt. Besonders das untersuchte TiO2 amorpher Struktur mit Schalt- und Lesegeschwindigkeiten von wenigen Millisekunden, aber auch polykristallines SrTiO3 zeigen ein hohes Potential für deren zukünftige Anwendung auf dem Gebiet resistiv schaltender Speicherzellen. Durch Kr+-Ionenimplantation ändern sich nachweislich sowohl die elektrischen als auch die strukturellen Eigenschaften in TiO2 und SrTiO3. XRD-Messungen an polykristallinen TiO2-Schichten bestätigen die mittels SRIM durchgeführten Simulationsdaten und zeigen für Implantationen ausreichend hoher Fluenzen eine Amorphisierung der kristallinen Strukturen durch atomare Umverteilung im Oxid. Dadurch bilden sich zusätzlich intrinsische, tiefe Defektniveaus in den Oxidschichten, welche das resistive Schalten modifizieren. Die Implantation polykristalliner TiO2-Schichten führt nachweislich zur Umwandlung flüchtiger in nichtflüchtige Schaltkurven, die im Vergleich zu amorphen Ausgangsproben stabilere Widerstandswerte bei geringerem Energieaufwand zeigen. / The concept of novel, longterm resistive switching memories is based on an enormous increase of the storage density with a simultaneous low energy consumption and a high scalability. In this context, different transition metal oxides, which are embedded between metal electrodes in a metal-insulatormetal structure, are part of the ongoing research. A widely recognized model for an explanation of the local structure within the switching mechanism discribes the alteration of the resistive state as a result of an alternating forming and interruption of a conducting path inside an oxide layer. The presence of such a filament acts like a linkage between the electrodes. Based on that, the present study deals with the investigation of such memory storages. In the wake of this the chosen electrode materials enables the determination of memory effects due to pure modifications inside the oxide layers. Thus, a targeted manipulation of defects and the resistive switching mechanism becomes possible by annealing of the layer or its modification by ion implantation which was the central challenge. Therefore the used oxide structures have to be well reputed and, additionally, almost free of defects to be able to localize changes in the switching mechanism exactly. To combine all this facts, the model system SrO-TiO2 is investigated with the two compounds TiO2 und SrTiO3. The properties of this system are already well discussed in literature. To ensure the purity of the layers, they are created by atomic layer deposition. The optimisation of the deposition process and layer characterization is presented in the first part of this study. Using a variety of optical and structural analysis methods allows defined conclusions about the oxide properties. All publications concerning the atomic layer deposition of SrTiO3 deal with self-made devices or precursor materials foreclosing an industrial reproduction. One of the results of this thesis enables exactly that by a combination of a commerically available device and commercial precursor materials. After its optimisation, the oxide layers are integrated between the two electrode materials Au and TiN in order to characterize the electrical properties of the resulting memory cells. Bipolar, nonvolatile resistive switching can be proved for amorphous and ex situ crystallised oxides. Based on structure-property correlations the conduction mechanism within the investigated cells can be identified as Schottky emission and for sufficiently high voltage as volume-dominated Poole Frenkel emission. The necessary defects therefore are determined to be shallow donor states. The assumption of resistive switching based on a reversible conducting filament consisting of defect states is confirmed by a changing Coulomb barrier high during the high of the Schottky barrier remains contant. Especially amorphous TiO2 with switching and reading speeds up to a few milliseconds, but also polycrystalline SrTiO3 showing high potential for future implementation in resistive switching memory cells. By use of Kr+ ion implantation the electrical and structural properties of TiO2 and SrTiO3 are changed. XRD measurements at crystalline TiO2 layers verify simulation data carried out by SRIM. For high enough fluences it shows an amorphisation of the crystalline structures by atomic redistribution inside the oxids. Thus, additionally intrinsic deep defects are created inside the oxide layers which modify the resistive switching character. A special focus is on the transformation of crystalline volatile switching TiO2 layers into amorphous non-volatile memory devices which shows more stable resistance values combined with lower energy input compared to initial amorphous layers.