Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante. / This work aims to study the nanowire tunneling field effect transistors (NW-TFET). The analyses were performed based on theoretical explanations, numerical simulations and experimental data. In order to improve the NW-TFET performance, it was used devices with different source compositions, such as Si, SiGe alloy and Ge, besides different thicknesses of HfO2 for the gate dielectric. With the aid of numerical simulations it was obtained the NW-TFET energy band diagrams and analyzed the influence of recombination and generation Shockley-Read-Hall (SRH) on the off current, the influence of the trap assisted tunneling (TAT) at low gate voltage bias (0,5V > VGS > 1,5V) and the direct band to band tunneling (BTBT) at higher gate voltage bias(VGS > 1,5V). The predominance of each conduction mechanisms was confirmed by the Arrhenius plot method, being this method adopted in all analysis in this work. The constant current with the temperature in the BTBT region has drawn attention and due to that, this work have studied the NW-TFET analog performance as function of temperature and also the influence of the source composition. The Ge source device shows an improved tunneling current, related to the bandgap narrowing, which leads to higher ION and transconductance. However, due to the strong BTBT dependence with the electric field, the use of Ge as source results in further ION/IOFF degradation. Despite this, the reduced HfO2 thickness in the gate dielectric, results in better electrostatic coupling, which also increases the tunneling current, making this device to present better analog performance when compared to devices with Si source. The use of different materials during the device fabrication leads to an increase of the interface defects. This work presented the influence of the interface trap density on the current, showing a direct relation with TAT and appearance of a plateau region in the IDS x VGS curves. In addition it was shown a strong temperature dependence increasing the current degradation at higher temperatures. Furthermore, the use of Ge has shown an increase of impurities in the oxide, and through the noise study it was observed the flicker noise increase at low frequency, which for TFETs, occurs due to the electrons trapping and detrapping in the oxide region. Once again, the reduced HfO2 thickness leads to better electrostatic coupling, resulting in noise reduction and becoming better when compared to a devices with Si source. In this work was proposed a low frequency noise model for a NW-TFET based on MOSFET models. Minor changes have been done, and thus a good agreement with the experimental results in the region where the BTBT is predominant conduction mechanism was obtained.

Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante. / This work aims to study the nanowire tunneling field effect transistors (NW-TFET). The analyses were performed based on theoretical explanations, numerical simulations and experimental data. In order to improve the NW-TFET performance, it was used devices with different source compositions, such as Si, SiGe alloy and Ge, besides different thicknesses of HfO2 for the gate dielectric. With the aid of numerical simulations it was obtained the NW-TFET energy band diagrams and analyzed the influence of recombination and generation Shockley-Read-Hall (SRH) on the off current, the influence of the trap assisted tunneling (TAT) at low gate voltage bias (0,5V > VGS > 1,5V) and the direct band to band tunneling (BTBT) at higher gate voltage bias(VGS > 1,5V). The predominance of each conduction mechanisms was confirmed by the Arrhenius plot method, being this method adopted in all analysis in this work. The constant current with the temperature in the BTBT region has drawn attention and due to that, this work have studied the NW-TFET analog performance as function of temperature and also the influence of the source composition. The Ge source device shows an improved tunneling current, related to the bandgap narrowing, which leads to higher ION and transconductance. However, due to the strong BTBT dependence with the electric field, the use of Ge as source results in further ION/IOFF degradation. Despite this, the reduced HfO2 thickness in the gate dielectric, results in better electrostatic coupling, which also increases the tunneling current, making this device to present better analog performance when compared to devices with Si source. The use of different materials during the device fabrication leads to an increase of the interface defects. This work presented the influence of the interface trap density on the current, showing a direct relation with TAT and appearance of a plateau region in the IDS x VGS curves. In addition it was shown a strong temperature dependence increasing the current degradation at higher temperatures. Furthermore, the use of Ge has shown an increase of impurities in the oxide, and through the noise study it was observed the flicker noise increase at low frequency, which for TFETs, occurs due to the electrons trapping and detrapping in the oxide region. Once again, the reduced HfO2 thickness leads to better electrostatic coupling, resulting in noise reduction and becoming better when compared to a devices with Si source. In this work was proposed a low frequency noise model for a NW-TFET based on MOSFET models. Minor changes have been done, and thus a good agreement with the experimental results in the region where the BTBT is predominant conduction mechanism was obtained.

Made available in DSpace on 2017-07-10T19:25:17Z (GMT). No. of bitstreams: 1 Clori Antonio Pontello.pdf: 3010074 bytes, checksum: 5e0d1daabf222439b9ee242e767883cf (MD5) Previous issue date: 2005-05-31 / Manioca starch mills generate a high amount of outflow and environmental concerns due to its high pollutant wastewater. Use of stabilization ponds is very common for the treatment of wastewater on the transformation of manioca root sector. However, in winter time, coincidently with the harvesting and crushing period a fall on the treatment system may occur due to the decreasing of environmental temperature. The present study aims at evaluating the effect of plastic canvass on the stability and keeping the anaerobic pond temperature treating the outflow of cassava. The system consisted of two reactors simultaneously supplied, with net volume of 15.98m3 each, 10 day hydraulic retaining time, continuously supplied, without pH correction and without temperature control. Air temperature and daily outflowing and inflowing of the reactors were monitorized for a period of one year. Both physical and chemical analyses were performed measuring pH, BOD5, COD, TSS, FSS, and VSS of the reactors outflowing and iinflowing in monthly frequency. The daily temperatures measured on the covered reactors were superior than on the uncovered ones. An efficiency of 10% on COD, and 15% on BOD5 were observed on the covered reactor. The plastic canvass covered reactor showed less oscilations with greater stability in keeping temperatures, mainly in periods of low temperature, showing a better performance on the treatment of cassava processing outflow. / As fecularias de mandioca geram um volume de efluente significativo e de elevada preocupação ambiental, devido a sua elevada carga poluidora. É muito comum a utilização de lagoas de estabilização para o tratamento de águas residuárias do setor de transformação de raiz de mandioca. Entretanto, nos períodos de inverno, coincidindo com o período de safra e esmagamento, observa-se uma queda na eficiência dos sistemas de tratamento que podem ocorrer em razão da diminuição da temperatura ambiente. O presente trabalho buscou avaliar o efeito da cobertura plástica na estabilidade e manutenção da temperatura de lagoa anaeróbia, tratando efluente de fecularia de mandioca. O sistema foi constituído de dois reatores alimentados em paralelos, com volume útil de 15,98m3 cada, tempo de detenção hidráulico de 10 dias, alimentação contínua, sem correção de pH e sem controle de temperatura. Durante o período de um ano, foram monitoradas as temperaturas do ar, entrada e saída dos reatores com medições realizadas diariamente. Efetuou-se análise físicoquímica medindo-se o pH, DBO5, DQO, SSS, SST, SSF e SSV do afluente e efluente dos reatores com freqüência mensal. As temperaturas diárias medidas no reator coberto foram superiores ao descoberto. Observou-se eficiência de 10% na DQO e 15% na DBO5 superiores para o reator coberto. O coberto com lona plástica apresentou menores oscilações com maior estabilidade na manutenção das temperaturas, principalmente nos períodos de baixas temperaturas, mostrando maior desempenho no tratamento de efluente de fecularia de mandioca.

Made available in DSpace on 2017-05-12T14:48:41Z (GMT). No. of bitstreams: 1 Clori Antonio Pontello.pdf: 3010074 bytes, checksum: 5e0d1daabf222439b9ee242e767883cf (MD5) Previous issue date: 2005-05-31 / Manioca starch mills generate a high amount of outflow and environmental concerns due to its high pollutant wastewater. Use of stabilization ponds is very common for the treatment of wastewater on the transformation of manioca root sector. However, in winter time, coincidently with the harvesting and crushing period a fall on the treatment system may occur due to the decreasing of environmental temperature. The present study aims at evaluating the effect of plastic canvass on the stability and keeping the anaerobic pond temperature treating the outflow of cassava. The system consisted of two reactors simultaneously supplied, with net volume of 15.98m3 each, 10 day hydraulic retaining time, continuously supplied, without pH correction and without temperature control. Air temperature and daily outflowing and inflowing of the reactors were monitorized for a period of one year. Both physical and chemical analyses were performed measuring pH, BOD5, COD, TSS, FSS, and VSS of the reactors outflowing and iinflowing in monthly frequency. The daily temperatures measured on the covered reactors were superior than on the uncovered ones. An efficiency of 10% on COD, and 15% on BOD5 were observed on the covered reactor. The plastic canvass covered reactor showed less oscilations with greater stability in keeping temperatures, mainly in periods of low temperature, showing a better performance on the treatment of cassava processing outflow. / As fecularias de mandioca geram um volume de efluente significativo e de elevada preocupação ambiental, devido a sua elevada carga poluidora. É muito comum a utilização de lagoas de estabilização para o tratamento de águas residuárias do setor de transformação de raiz de mandioca. Entretanto, nos períodos de inverno, coincidindo com o período de safra e esmagamento, observa-se uma queda na eficiência dos sistemas de tratamento que podem ocorrer em razão da diminuição da temperatura ambiente. O presente trabalho buscou avaliar o efeito da cobertura plástica na estabilidade e manutenção da temperatura de lagoa anaeróbia, tratando efluente de fecularia de mandioca. O sistema foi constituído de dois reatores alimentados em paralelos, com volume útil de 15,98m3 cada, tempo de detenção hidráulico de 10 dias, alimentação contínua, sem correção de pH e sem controle de temperatura. Durante o período de um ano, foram monitoradas as temperaturas do ar, entrada e saída dos reatores com medições realizadas diariamente. Efetuou-se análise físicoquímica medindo-se o pH, DBO5, DQO, SSS, SST, SSF e SSV do afluente e efluente dos reatores com freqüência mensal. As temperaturas diárias medidas no reator coberto foram superiores ao descoberto. Observou-se eficiência de 10% na DQO e 15% na DBO5 superiores para o reator coberto. O coberto com lona plástica apresentou menores oscilações com maior estabilidade na manutenção das temperaturas, principalmente nos períodos de baixas temperaturas, mostrando maior desempenho no tratamento de efluente de fecularia de mandioca.

This diploma thesis is focused on the analysis of basic problematics of dielectrics and nanocomposites. It describes the fabrication of experimental samples of nanocomposites from sealing epoxy resin and nanoparticles of titanium dioxide with various weight filling. Further, the thesis deals with measuring and evaluation of dielectric properties of the samples. It examines the influence of weight filling, temperature and frequency of the electric field on volume resistivity, relative permitivity and loss factor.

Microalgae are considered one of the most promising feedstocks for biofuel production for the future. The most efficient way to produce vast amounts of algal biomass is the use of closed tubular photobioreactors (PBR). The heat requirement for a given system is a major concern since the best algae growth rates are obtained between 25-30 °C, depending on the specific strain. A procedure to determine temperature influence on algal growth rates was developed for a lab-scale PBR system using the species Chlorella. A maximum growth rate of 1.44 doublings per day at 29 °C (optimal temperature) was determined. In addition, a dynamic mathematical model was developed to simulate heating and cooling energy requirements of tubular PBRs for any desired location. Operating the model with hourly weather data as input, heating and cooling loads can be calculated early in the planning stage of a project. Furthermore, the model makes it possible to compare the operation inside a greenhouse to the outdoor operations, and consequently provides fundamental information for an economic feasibility study. The best configuration for a specific location can be evaluated easily. The model was exemplary tested for a hypothetical 100,000 l photobioreactor located in San Luis Obispo, California, U.S.A. Average algae productivity rates of 23% and 67% for outdoor and indoor PBR operations, respectively, were obtained. Actual energy loads (heating and cooling) needed to maintain the PBR at optimal temperature were determined and compared. Sensitivity analyses had been performed for abrupt temperature and solar radiation steps, PBR row distances, ground reflectivities, and ventilation rates of the greenhouse. An optimal row distance of 0.75 m was determined for the specific PBR. The least amount of energy was needed for a ground reflectivity of 20%. The ventilation rate had no major influence on the productivity rate of the system. Results demonstrated the importance of a simulation model as well as the economic impact of a sophisticated heat management system. Energy savings due to an optimized heat management system will eventually increase proficiency of the systems, which will support a new sustainable industry and future developmental potential.

The aim of this master’s thesis is to investigate the electrical properties of various thick-film resistor pastes in a wider temperature range. The thesis mainly focuses on a change in electrical resistance depending on temperatures, which extend to the cryogenic region. To achieve this, there is an overview of the thick-film technology properties, major technological procedures, principles of resistive pastes conductivity, methods of electrical resistance measuring, possible errors in measurement and methods of their minimization. The content of this work is also familiar with the characteristics of a cryogenic station, on this foundation was proposed the measurement procedure and created thick-film circuits for this station. After measurement in the interval 10 K to 350 K, there are subsequently evaluated the data and explains the principles of the conductivity of used pastes.

Trace component analysis in gasification processes are important part of elemental component balances in order to understand the fate of these participating compounds in the feedstock. Residual traces in the raw synthesis gas after quench could bring about the poisoning of catalysts and corrosion effects on plant facilities. The objective of this work is to investigate the effects of quenching operation on the trace components during test campaigns of the autothermal non-catalytic reforming of natural gas (Gas-POX) mode in the HP POX (high pressure partial oxidation) test plant. In order to achieve this, Aspen Plus simulation model of the quench chamber of the HP POX test plant was developed to re-calculate the quench chamber input amount of different trace compounds from their output amount measured during test points of the Gas-POX campaigns. Variation in quench water temperatures from 130 °C to 220 °C and pH value of quench water as well as the resulting variation in Henry´s and Dissociation constant of the traces (CO2, H2S, NH3 and HCN) changed the distribution of traces calculated in the quench water. The formation of traces of organic acid (formic acid and acetic acid) and traces of BTEX, PAHs and soot in the quench water effluent were discussed. The discrepancies between equilibrium constant and reaction quotient (non-equilibrium or real) for the formation of NH3 and HCN at the exit of the gasifier were discussed. The assessment of the results in this work should lead to the improvement in the understanding of trace components and concepts that could be employed to influence their formation and reduction.

Trace component analysis in gasification processes are important part of elemental component balances in order to understand the fate of these participating compounds in the feedstock. Residual traces in the raw synthesis gas after quench could bring about the poisoning of catalysts and corrosion effects on plant facilities. The objective of this work is to investigate the effects of quenching operation on the trace components during test campaigns of the autothermal non-catalytic reforming of natural gas (Gas-POX) mode in the HP POX (high pressure partial oxidation) test plant. In order to achieve this, Aspen Plus simulation model of the quench chamber of the HP POX test plant was developed to re-calculate the quench chamber input amount of different trace compounds from their output amount measured during test points of the Gas-POX campaigns. Variation in quench water temperatures from 130 °C to 220 °C and pH value of quench water as well as the resulting variation in Henry´s and Dissociation constant of the traces (CO2, H2S, NH3 and HCN) changed the distribution of traces calculated in the quench water. The formation of traces of organic acid (formic acid and acetic acid) and traces of BTEX, PAHs and soot in the quench water effluent were discussed. The discrepancies between equilibrium constant and reaction quotient (non-equilibrium or real) for the formation of NH3 and HCN at the exit of the gasifier were discussed. The assessment of the results in this work should lead to the improvement in the understanding of trace components and concepts that could be employed to influence their formation and reduction.:List of Figures vii List of Tables xii List of Abbreviations and Symbols xiii 1 Introduction 1 1.1 Background 1 1.2 Objective of the Work 4 1.3 Overview of the Work 5 2 Process and test conditions 6 2.1 HP POX test plant 6 2.2 Test campaign procedure 8 2.2.1 Gas-POX operating parameter range 8 2.2.2 Gas-POX experiments 9 2.2.3 Net reactions of partial oxidation 9 2.3 Gaseous feedstock characterization 11 2.3.1 Natural gas feedstock composition 11 2.4 Analytical methods for gaseous products 12 2.4.1 Hot gas sampling 12 2.4.2 Raw synthesis gas analysis after quench 13 2.5 Aqueous phase product analysis 14 2.5.1 Molecularly dissolved trace compounds and their ions trace analysis 14 2.5.2 Other trace analysis 15 2.6 Limit of accuracy in measurement systems 15 2.7 Summary 17 3 Simulation and methods 18 3.1 Test points calculation of the HP POX test campaign 18 3.1.1 Aspen Plus model for HP POX quench water system 19 3.2 Gas-POX 201 VP1 quench water system model simulation by Aspen Plus 23 3.2.1 Measured and calculated input parameters 23 3.2.2 Calculated sensitivity studies of species and their distribution for test point (VP1) 24 3.3 Used calculation tools related to the work 25 3.3.1 VBA in Excel 25 3.3.2 Python as interface between Aspen Plus and Microsoft Excel 26 3.3.3 Aspen Simulation Workbook 27 3.4 Summary 29 4 Trace components in quench water system 30 4.1 Physico-chemical parameters of quench water 31 4.1.1 Quench water pH adjustment 32 4.1.2 Henry constant 34 4.1.3 Dissociation constant 35 4.1.4 Organic acids in quench water 38 4.2 Carbon dioxide (CO2) 39 4.2.1 Results of sensitivity study: quench water temperature variation effects on CO2 41 4.2.2 Results of sensitivity study: quench water pH variation influence on CO2 42 4.3 Nitrogen compounds 43 4.3.1 Ammonia (NH3) 44 4.3.2 Results of sensitivity study: quench water temperature variation effects on NH3 46 4.3.3 Results of sensitivity study: quench water pH variation influence on NH3 47 4.3.4 Hydrogen Cyanide (HCN) 48 4.3.5 Results of sensitivity study: quench water temperature variation effects on HCN 50 4.3.6 Results of sensitivity study: quench water pH variation influence on HCN 50 4.4 Sulphur compounds: H2S 51 4.4.1 Results of sensitivity study: quench water temperature variation effects on H2S 53 4.4.2 Results of sensitivity study: quench water pH variation influence on H2S 54 4.5 Summary 55 5 Organic acids trace studies in quench water 57 5.1 Organic acids interaction with ammonia compounds in the quench water 57 5.2 Formic acid 62 5.2.1 Trace of formic acid in quench water 64 5.3 Acetic acid 67 5.3.1 Trace of acetic acid in quench water 69 5.4 Summary 72 6 Temperature approach studies for NH3 and HCN formation in gasifier 74 6.1 Nitrogen compounds: NH3 and HCN 74 6.2 Ammonia (NH3) formation in the gasifer 77 6.3 Hydrogen cyanide (HCN) formation in the gasifier 79 6.4 Discrepancies between back-calculated reaction quotients and equilibrium constants of the NH3 formation 81 6.4.1 Case 1: calculated equilibrium distribution between N2, NH3 and HCN 81 6.4.2 Case 2: calculated equilibrium distribution between NH3 and HCN 83 6.5 Summary 84 7 Traces of BTEX, PAHs and soot in quench water 86 7.1 Quench water behaviour 87 7.2 BTEX compounds 88 7.2.1 BTEX in quench water effluent 90 7.3 PAH compounds 93 7.3.1 PAHs in quench water effluent 95 7.4 Soot formation 99 7.4.1 Soots in quench water effluent 101 7.5 Summary 102 8 Summary and outlook 103 Bibliography 106 9 Appendix 135 List of Figures Figure 2.1: HP POX test plant main facility components and material flow courtesy of [Lurgi GmbH, 2008] 6 Figure 2.2: Simplified scheme of HP POX plant (including quench system) [Lurgi GmbH, 2008] 7 Figure 2.3: Overview of reactions of methane 10 Figure 3.1: Simplified scheme for HP POX quench water system 18 Figure 3.2: Aspen Plus flow diagrams of simulated HP POX quench water system 19 Figure 3.3: Integration of information and functions in VBA via Microsoft Excel to Aspen Plus model 25 Figure 3.4: Integration of information and functions in Python via Microsoft Excel to Aspen Plus model 26 Figure 3.5: ASW enables Excel users to rapidly run scenarios using the underlying rigorous models to analyze plant data, monitor performance, and make better decisions. 27 Figure 4.1: Vapour-liquid equilibria system of CO2, H2S, NH3, HCN and organic acids in the quench water and extended mechanisms according to [Kamps et al., 2001], [Alvaro et al., 2000], [Kuranov et al., 1996], [Xia et al., 1999] and [Edwards et al., 1978]. 30 Figure 4.2: HP POX quench water system with pH regulator for sensitivity studies 34 Figure 4.3: Henry´s constant for CO2, H2S, NH3 and HCN derived from [Edwards et al., 1978] for CO2, [Alvaro et al., 2000] for NH3, [Kamps et al., 2001] for H2S, and [Rumpf et al., 1992] for HCN 35 Figure 4.4: Dissociation constants for CO2, H2S, NH3, HCN and H2O derived from [Alvaro et al., 2000], [Kamps et al., 2001], and [Edwards et al., 1978] 37 Figure 4.5: The flow of CO2 in the quench water cycle (test point VP1). 40 Figure 4.6: Calculated quench water temperature variation and effects on CO2 distribution 42 Figure 4.7: Calculated influence of pH regulation and effects on CO2 distribution 43 Figure 4.8: The flow of NH3 in the quench water cycle (test point VP1). 46 Figure 4.9: Calculated quench water temperature variation and effects on NH3 distribution 47 Figure 4.10: Calculated influence of pH regulation and effects on NH3 distribution 48 Figure 4.11: The flow of HCN in the quench water cycle (test point VP1). 49 Figure 4.12: Calculated quench water temperature variation and effects on HCN distribution 50 Figure 4.13: Calculated influence of pH regulation and effects on HCN distribution 51 Figure 4.14: The flow of H2S in the quench water cycle (test point VP1) 53 Figure 4.15: Calculated quench water temperature variation and effects on H2S distribution 54 Figure 4.16: Calculated influence of pH regulation and effects on H2S distribution 55 Figure 5.1: Aspen Plus back-calculated (real) formic acid concentration, quench water temperature and the calculated equilibrium formic acid concentration against back-calculated (real) ammonia concentration for the 47 test points (using amongst others sampled HCOO- and NH4+ values according to Table 2.6). 59 Figure 5.2: Aspen plus back-calculated (real) formic acid concentration, back-calculated (real) ammonia concentration and the calculated equilibrium formic acid concentration against quench water temperature for the 47 test points (using amongst others sampled HCOO- and NH4+ values according to Table 2.6). 60 Figure 5.3: Aspen plus back-calculated (real) acetic acid concentration, quench water temperature and the calculated equilibrium acetic acid concentration against back-calculated (real) ammonia concentration for the 47 test points. 61 Figure 5.4: Aspen plus back-calculated (real) acetic acid concentration, back-calculated (real) ammonia concentration and the calculated equilibrium acetic acid concentration against quench water temperature for the 47 test points. 62 Figure 5.5: Concentration of formic acid (Aspen plus calculated m_eq and back-calculted m_real) formation in the quench and quench water temperature for the 47 test points. 64 Figure 5.6: Concentration of formic acid (Aspen plus calculated m_eq and back-calculted m_real) in the quench against quench water temperature for the 47 test points (as in Fig.5.2). 65 Figure 5.7: Comparison between formic acid equilibrium constant (Keq), reaction quotient (Kreal) and the quench water temperature for the 47 test points. 66 Figure 5.8: Comparison between formic acid equilibrium constant (Keq) and reaction quotient (Kreal) against quench water temperatures for the 47 test points. 67 Figure 5.9: Concentration of acetic acid (Aspen plus calculated m_eq and back-calculted m_real) in the quench and quench water temperature for the 47 test points. 69 Figure 5.10: Concentration of acetic acid (Aspen plus calculated m_eq and back-calculted m_real) in the quench against quench water temperature for the 47 test points (as in Fig.5.4). 70 Figure 5.11: Comparison between acetic acid equilibrium constant (Keq), reaction quotient (Kreal) and the quench water temperature for the 47 test points. 71 Figure 5.12: Comparison between acetic acid equilibrium constant (Keq) and reaction quotient (Kreal) against quench water temperatures for the 47 test points. 72 Figure 6.1: Mole fraction of gas compoents in the hot gas outlet out of gasifier against hot gas temperature for the 47 test points 76 Figure 6.2: Calculated reaction quotient (Q) and equlibrium constant (Keq) for NH3 against hot gas temperature for the 47 test points (see Fig. 9.10 in Appendix) 77 Figure 6.3: NH3 temperature approach against hot gas temperature for the 47 test points (see Fig. 9.11 in Appendix) 78 Figure 6.4: Calculated reaction quotient (Q) and equlibrium constant (Keq) for HCN against hot gas temperature for the 47 test points (see Fig. 9.13 in Appendix) 79 Figure 6.5: HCN temperature approach against hot gas temperature for the 47 test points (see Fig. 9.14 in Appendix) 80 Figure 6.6: Comparison between calculated real and equilibrium hot gas N2, NH3 and HCN mol fractions against their respective hot gas temperature (case 1). 82 Figure 6.7: Relations between back-calculated real and equilibrium hot gas N2, NH3 and HCN mol fractions (for chemical equilibrium according to equations (6.1) and (6.4)) against their respective hot gas temperature (see Case 1, Section 6.4.1, and Fig. 6.6) 82 Figure 6.8: Comparison between calculated real and equilibrium hot gas HCN mol fraction against their respective hot gas temperature (case 2). 83 Figure 6.9: Relations between back-calculated real and equilibrium hot gas HCN mol fractions, and change in NH3 mol fractions (for chemical equilibrium according to equation (6.4)), against their respective hot gas temperature (see. Case 2, Section 6.4.2 and Fig. 6.7) 84 Figure 6.10 Comparison between NH3 and HCN formation (mole fraction) calculated equilibrium constant (Keq) and calculated reaction quotient (Q), N2 consumption and hot gas temperatures for the 47 test points (case 1 and case 2). 85 Figure 7.1: HP POX test plant quench water system 88 Figure 7.2: Traces of BTEX measured in the Gas-POX 203 – 207 quench water effluent sample. 91 Figure 7.3: Individual component of BTEX measured in the Gas-POX 203 – 207 quench water effluent sample. 92 Figure 7.4: (a) Alkyl radical decomposition and (b) C1 and C2 hydrocarbons oxidation mechanism [Warnatz et al., 2000] 93 Figure 7.5: Recombination of C3H3 to form benzene 94 Figure 7.6: The Diels - Alder reaction for the formation of PAHs 95 Figure 7.7: Amount of PAHs that were detected in Gas-POX 203 – 207 test points quench water effluent samples. 97 Figure 7.8: Distribution of PAH compounds in Gas-POX 203 – 207 quench water effluent samples. 98 Figure 7.9: Some steps in soot formation [McEnally et al., 2006]. 99 Figure 7.10: Illustration of soot formation path in homogenous mixture [Bockhorn et al., 1994] 100 Figure 9.1: Aspen flow sheet set up for HP POX quench system GasPOX 201 VP1 (simplified and extension of Fig. 3.2, organic acids not taken into account). Tabulated values are given in Table 9.11. 135 Figure 9.2: Comparison between the Henry´s constant profiles: Aspen Plus (markers) and Literatures (solid lines) ([Edwards et al., 1978] for CO2, [Alvaro et al., 2000] for NH3, [Kamps et al., 2001] for H2S, and [Rumpf et al., 1992] for HCN as it can be seen in Fig. 4.3) 137 Figure 9.3: Henry´s constant profiles derived from literatures ([Edwards et al., 1978] for CO2, [Alvaro Pérez-Salado et al., 2000] for NH3, [Kamps et al., 2001] for H2S, and [Rumpf et al., 1992] for HCN as it can be seen in Fig. 4.3) 137 Figure 9.4: Comparison between the dissociation constant profiles: Aspen Plus (markers) and Literatures (solid or dashed lines) [Alvaro et al., 2000], [Kamps et al., 2001], and [Edwards et al., 1978] as in Fig.4.4. 138 Figure 9.5: Dissociation constant profiles derived from literatures [Kamps et al., 2001], and [Edwards et al., 1978] as in Fig.4.4. 138 Figure 9.6: Calculated pH values, temperature range and species 139 Figure 9.7: Aspen Plus flow sheet setup for organic acid compounds calculations (GasPOX 201 VP1, see also Table 9.12) 142 Figure 9.8: Aspen Plus flow sheet setup for nitrogen compounds calculations (GasPOX 201 VP1, see also Table 9.12, organic acids are taken into account in the aqueous streams of the quench system) 145 Figure 9.9: Yield of ammonia in gasifier (calculated real) and hot gas temperature against the 47 test points 146 Figure 9.10: Kreal or reaction quotient for ammonia formation in the gasifier against the 47 test points. 146 Figure 9.11: Temperature approach studies for ammonia and the 47 test points 147 Figure 9.12: Yield of HCN from the gasifier (calculated real and equilibrium) and hot gas temperature and the 47 test points 147 Figure 9.13: Comparison between equilibrium constant and reaction quotient for HCN and 47 test points 148 Figure 9.14: Temperature approach studies for HCN and the 47 test points 148 Figure 9.15: Comparison among equilibrium constants of reactions against temperature, T [°C] 149 Figure 9.16: Comparison among equilibrium constants of reactions against temperature, 1/T [1/K] 150 List of Tables Table 2.1: Outline of Gas-POX mode operating parameter range 8 Table 2.2: Outline of test runs operating mode and parameters of chosen test campaigns 9 Table 2.3: Natural gas feedstock compositions 12 Table 2.4: Product synthesis gas analysis method (hot gas before quench) [Brüggemann, 2010] 12 Table 2.5: Analysis methods for raw synthesis gas [Brüggemann, 2010] 13 Table 2.6: Analysis methods for aqueous phase products [Brüggemann, 2010] 14 Table 2.7: Relative accuracy for the measured value for temperature, pressure and flow of each feed and product stream [Meyer, 2007] and [Brüggemann, 2010] 17 Table 3.1: Description of blocks used in Aspen Plus simulation. 20 Table 3.2: HP POX test plant quench water cycle parameters Gas-POX 201 VP1* 23 Table 3.3: pH regulator parameters 24 Table 4.1: Organic acids distribution in streams for VP1 based on calculation from Aspen Plus. 38 Table 4.2: The distribution of CO2 and its ions in all the streams 40 Table 4.3: The distribution of NH3 and its ions in all the streams 45 Table 4.4: The distribution of HCN and its ions in all the streams 49 Table 4.5: The distribution of H2S and its ions in all the streams 52 Table 7.1: Relative sooting tendency [Tesner et al., 2010] 101 Table 9.1: Natural gas feed analysis method [Brüggemann, 2010] 135 Table 9.2: pH scale with examples of solution [NALCO 2008] 136 Table 9.3: Gas-POX test campaigns and with designated serial numbers 140 Table 9.4: Summary of correlation coefficient (r) from Figures in Chapter 5 144 Table 9.5: Comparison among reactions temperatures and heat of reactions 149 Table 9.6: Content of BTEX compounds in Gas-POX quench water samples 151 Table 9.7: BTEX in quench water effluent samples results 152 Table 9.8: Content of PAH compounds in Gas-POX quench water samples 157 Table 9.9: PAHs in quench water effluent samples results 160 Table 9.10: Soot in quench water effluent samples results 169 Table 9.11: Aspen Plus flow sheet setup stream details (GasPOX 201 VP1, according to Fig.3.2 and Fig.9.1, organic acids not taken into account) 170 Table 9.12: Aspen Plus flow sheet setup for organic acid and nitrogen compounds calculations for GasPOX 201 VP1 (according to Figures 9.7 and 9.8, organic acids are taken into account) 174