Measurements performed from stereo reconstruction can be obtained with a high accuracy with correct calibrated cameras. A stereo camera rig mounted in an outdoor environment is exposed to temperature changes, which has an impact of the calibration of the cameras. The aim of the master thesis was to investigate the thermal impact of a calibrated stereo camera rig. This was performed by placing a stereo rig in a temperature chamber and collect data of a calibration board at different temperatures. Data was collected with two different cameras and lensesand used for calibration of the stereo camera rig for different scenarios. The obtained parameters were plotted and analyzed. The result from the master thesis gives that the thermal variation has an impact of the accuracy of the calibrated stereo camera rig. A calibration obtained in one temperature can not be used for a different temperature without a degradation of the accuracy. The plotted parameters from the calibration had a high noise level due to problems with the calibration methods, and no visible trend from temperature changes could be seen.

The main aim of this thesis work is to investigate the electrical, optical and thermal impact characteristics of cobalt oxide doped antimony tin oxide (CoO-ATO) in the form of thin films and nanofiber membranes. CoO-ATO is a novel composite material that has the potential to be used as reinforced aircraft coatings, military garment coatings, or more specifically as an anti-reflective (AR) top coating for photovoltaic (PV) cells. This work will be critical in determining the effectiveness of using a CoO-ATO layer in these applications. Electrospun nanofibers and spin coated thin films consisting of a polymeric solution of CoO-ATO will be used. Thin films are created using spin coating techniques, and nanofiber membranes are created using an electrospinning technique. Polystyrene (PS) will be used as a solute, and chloroform as a solvent, to create the solution. It is hypothesized that coatings of this material will have improved optical characteristics as compared to traditional ATO coatings and minimum impact from thermal cycling making it a favorable candidate for PV cells. This work will do an electrical, optical and thermal cycling impact characterization of CoO-ATO thin films and nanofiber membranes for a doping range of x% CoO where x ranged from 0.2

Ce travail de thèse présente une étude concernant la caractérisation des effets électrothermiques dans les transistors bipolaires à hétérojonction (HBT) en SiGe. Lors de ces travaux, deux procédés technologiques BiCMOS à l’état de l’art ont été analysés: le B11HFC de Infineon Technologies (130nm) et le B55 de STMicroelectronics (55nm).Des structures de test dédiées ont étés conçues, pour évaluer l’impact électrothermique du back end of line (BEOL) de composants ayant une architecture à un ou plusieurs doigts d’émetteur. Une caractérisation complète a été effectuée en régime continu et en mode alternatif en petit et en grand signal. De plus, une extraction des paramètres thermiques statiques et dynamiques a été réalisée et présentée pour les structures de test proposées. Il est démontré que les figures de mérite DC et RF s’améliorent sensiblement en positionnant des couches de métal sur le transistor, dessinées de manière innovante et ayant pour fonction de guider le flux thermique vers l’extérieur. L’impact thermique du BEOL a été modélisé et vérifié expérimentalement dans le domaine temporel et fréquentiel et aussi grâce à des simulations 3D par éléments finis. Il est à noter que l’effet du profil de dopage sur la conductivité thermique est analysé et pris en compte.Des topologies de transistor innovantes ont étés conçues, permettant une amélioration des spécifications de l’aire de sécurité de fonctionnement, grâce à un dessin innovant de la surface d’émetteur et du deep trench (DTI).Un modèle compact est proposé pour simuler les effets de couplage thermique en dynamique entre les émetteurs des HBT multi-doigts; ensuite le modèle est validé avec de mesures dédiées et des simulations TCAD.Des circuits de test ont étés conçus et mesurés, pour vérifier la précision des modèles compacts utilisés dans les simulateurs de circuits; de plus, l’impact du couplage thermique entre les transistors sur les performances des circuits a été évalué et modélisé. Finalement, l’impact du dissipateur thermique positionné sur le transistor a été étudié au niveau circuit, montrant un réel intérêt de cette approche. / This work is focused on the characterization of electro-thermal effects in advanced SiGe hetero-junction bipolar transistors (HBTs); two state of the art BiCMOS processes have been analyzed: the B11HFC from Infineon Technologies (130nm) and the B55 from STMicroelectronics (55nm).Special test structures have been designed, in order to evaluate the overall electro-thermal impact of the back end of line (BEOL) in single finger and multi-finger components. A complete DC and RF electrical characterization at small and large signal, as well as the extraction of the device static and dynamic thermal parameters are performed on the proposed test structures, showing a sensible improvement of the DC and RF figures of merit when metal dummies are added upon the transistor. The thermal impact of the BEOL has been modeled and experimentally verified in the time and frequency domain and by means of 3D TCAD simulations, in which the effect of the doping profile on the thermal conductivity is analyzed and taken into account.Innovative multi-finger transistor topologies are designed, which allow an improvement of the SOA specifications, thanks to a careful design of the drawn emitter area and of the deep trench isolation (DTI) enclosed area.A compact thermal model is proposed for taking into account the mutual thermal coupling between the emitter stripes of multi-finger HBTs in dynamic operation and is validated upon dedicated pulsed measurements and TCAD simulations.Specially designed circuit blocks have been realized and measured, in order to verify the accuracy of device compact models in electrical circuit simulators; moreover the impact on the circuit performances of mutual thermal coupling among neighboring transistors and the presence of BEOL metal dummies is evaluated and modeled.