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Transport dans les composés thermoélectriques skutterudites de type R(x)Co(4-y)Ni(y)Sb(12) (R=Nd, Yb et In) / Transport in thermoelectric skutterudite compounds RxCo4-yNiySb12 (R=Nd, Yb AND In)Da Ros, Véronique 30 May 2008 (has links)
Dans le cadre du regain d’activité pour la thermoélectricité, les matériaux skutterudite suscitent un vif intérêt du fait de leurs performances dans la gamme de température 400-800 K. L’étude des propriétés structurales et thermoélectriques de triantimoniures de cobalt partiellement remplies au néodyme, à l’ytterbium ou à l’indium, et partiellement substituées au nickel a ainsi été menée. Des composés denses et homogènes ont été obtenus via une technique de métallurgie des poudres. L’analyse conjointe des résultats de diffraction des rayons X et de microsonde de Castaing a permis de déterminer les limites de solubilité x des éléments remplisseurs dans Co4Sb12 : ainsi, xNd ~ 0,05 – 0,06, et xYb ~ xIn ~ 0,18. Dans le cas de l’ytterbium, nous avons montré par diffraction de neutrons sur poudre que ces atomes sont localisés au centre des cavités de la structure et qu’ils présentent un paramètre de déplacement atomique élevé. Les propriétés électriques (résistivité électrique, pouvoir thermoélectrique, effet Hall) et thermiques (conductivité thermique) ont été scrutées sur une vaste gamme de température (2 à 800 K). L’analyse des mesures, entre 2 et 800 K, a montré que plus la teneur en élément inséré est élevée, plus celui-ci a un impact bénéfique sur les propriétés thermoélectriques. Les performances maximales atteintes s’élèvent ainsi à ZT ~ 0,3 pour le composé Nd0,052Co4Sb12 à 800 K, ZT ~ 0,9 pour le composé In0,180Co4Sb12 à 710 K et ZT ~ 1 pour le composé Yb0,180Co4Sb12 à 800 K. L’optimisation de ces matériaux a alors été considérée via la substitution partielle du cobalt par du nickel. Nous avons montré que la présence de nickel augmente la concentration de porteurs de charge et modifie les mécanismes de diffusion onde ceux-ci. Dans le cas des composés partiellement remplis au néodyme, son impact sur les propriétés thermoélectriques est très bénéfique. Pour les composés à l’indium et à l’ytterbium, des compensations de l’influence du nickel sur les différents paramètres s’opèrent si bien que les performances thermoélectroniques globales du matériau ne présentent pas d’amélioration significative / In a context of renewed interest in thermoelectric compounds, skutterudite materials are an interesting target because of their good performances in the temperature range 400-800 K. The study of structural and thermoelectric properties of cobalt triantimonides partially filled with neodymium, ytterbium and indium, and partially substituted with nickel, has been undertaken. Dense and homogeneous samples have been obtained using a powder metallurgy technique. The joint analysis of X-ray diffraction and electroprobe microanalysis led to the determination of the solubility limit of the filler elements: xNd ~ 0,05 – 0,06, and xYb ~ xIn ~ 0,18. For ytterbium, we were able to prove by powder neutron diffraction technique that the atoms are localized at the centre of the structure and that they have a very high atomic displacement parameter. Electrical properties (electrical resistivity, thermal conductivity, Hall effect) and thermal properties (thermal conductivity) have been investigated on a very large range of temperature (2 to 800K). The exploitation of the measurements showed that the higher the quantity of each insertion element, the greater its beneficial impact on the thermoelectric properties. The best performances have been reached with ZT ~ 0,3 for Nd0,052Co4Sb12 at 800 K, ZT ~ 0,9 in the case of In0,180Co4Sb12 at 710 K and ZT ~ 1 for Yb0,180Co4Sb12 at 800 K. An optimisation was considered using the partial substitution of cobalt by nickel. The impact of nickel on the thermoelectric performances on ternary compounds was very different depending on the element. In the case of neodymium, the presence of nickel modified the diffusion mechanism of the carriers and its impact was very beneficial. For indium and ytterbium, the impact of nickel did not lead to any significant improvement
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Thermal and Electrical Transport Study on Thermoelectric Materials Through Nanostructuring and Magnetic FieldYao, Mengliang January 2017 (has links)
Thesis advisor: Cyril P. Opeil / Thermoelectric (TE) materials are of great interest to contemporary scientists because of their ability to directly convert temperature differences into electricity, and are regarded as a promising mode of alternative energy. The TE conversion efficiency is determined by the Carnot efficiency, η_C and is relevant to a commonly used figure of merit ZT of a material. Improving the value of ZT is presently a core mission within the TE field. In order to advance our understanding of thermoelectric materials and improve their efficiency, this dissertation investigates the low-temperature behavior of the p-type thermoelectric Cu2Se through chemical doping and nanostructuring. It demonstrates a method to separate the electronic and lattice thermal conductivities in single crystal Bi2Te3, Cu, Al, Zn, and probes the electrical transport of quasi 2D bismuth textured thin films. Cu2Se is a good high temperature TE material due to its phonon-liquid electron-crystal (PLEC) properties. It shows a discontinuity in transport coefficients and ZT around a structural transition. The present work on Cu2Se at low temperatures shows that it is a promising p-type TE material in the low temperature regime and investigates the Peierls transition and charge-density wave (CDW) response to doping [1]. After entering the CDW ground state, an oscillation (wave-like fluctuation) was observed in the dc I-V curve near 50 K; this exhibits a periodic negative differential resistivity in an applied electric field due to the current. An investigation into the doping effect of Zn, Ni, and Te on the CDW ground state shows that Zn and Ni-doped Cu2Se produces an increased semiconducting energy gap and electron-phonon coupling constant, while the Te doping suppresses the Peierls transition. A similar fluctuating wave-like dc I-V curve was observed in Cu1.98Zn0.02Se near 40 K. This oscillatory behavior in the dc I-V curve was found to be insensitive to magnetic field but temperature dependent [2]. Understanding reducing thermal conductivity in TE materials is an important facet of increasing TE efficiency and potential applications. In this dissertation, a magnetothermal (MTR) resistance method is used to measure the lattice thermal conductivity, κ_ph of single crystal Bi2Te3 from 5 to 60 K. A large transverse magnetic field is applied to suppress the electronic thermal conduction while measuring thermal conductivity and electrical resistivity. The lattice thermal conductivity is then calculated by extrapolating the thermal conductivity versus electrical conductivity curve to a zero electrical conductivity value. The results show that the measured phonon thermal conductivity follows the e^(Δ_min⁄T) temperature dependence and the Lorenz ratio corresponds to the modified Sommerfeld value in the intermediate temperature range. These low-temperature experimental data and analysis on Bi2Te3 are important compliments to previous measurements and theoretical calculations at higher temperatures, 100 – 300 K. The MTR method on Bi2Te3 provides data necessary for first-principles calculations [4]. A parallel study on single crystal Cu, Al and Zn shows the applicability of the MTR method for separating κ_e and κ_ph in metals and indicates a significant deviation of the Lorenz ratio between 5 K and 60 K [3]. Elemental bismuth is a component of many TE compounds and in this dissertation magnetoresistance measurements are used investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Textured and non-textured bismuth thin films are examined by measuring their angle-dependent magnetoresistance at different temperatures (3 – 300 K) and applied magnetic fields (0 – 90 kOe). Experimental evidence shows that the anisotropic conduction is due to the large mass anisotropy of bismuth and is confirmed by a parallel study on an antimony thin film [5].
[1] Mengliang Yao, Weishu Liu, Xiang Chen, Zhensong Ren, Stephen Wilson, Zhifeng Ren, and Cyril Opeil, J. Alloys Compd. 699, 718 (2017).
[2] Mengliang Yao, Weishu Liu, Xiang Chen, Zhensong Ren, Stephen Wilson, Zhifeng Ren, and Cyril P. Opeil, J. Materiomics 3, 150 (2017).
[3] Experimental determination of phonon thermal conductivity and Lorenz ratio of single crystal metals: Al, Cu and Zn, Mengliang Yao, Mona Zebarjadi, and Cyril P. Opeil, under review.
[4] Experimental determination of phonon thermal conductivity and Lorenz ratio of single crystal bismuth telluride, Mengliang Yao, Stephen Wilson, Mona Zebarjadi, and Cyril Opeil, under review.
[5] Albert D. Liao, Mengliang Yao, Ferhat Katmis, Mingda Li, Shuang Tang, Jagadeesh S. Moodera, Cyril Opeil, Mildred S. Dresselhaus, Appl. Phys. Lett. 105, 063114 (2014). / Thesis (PhD) — Boston College, 2017. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.
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Structure and properties of BiCuSeO-type thermoelectric materials / Structure et propriétés des matériaux thermoélectrique de type BiCuSeOLi, Jing 24 July 2015 (has links)
La conversion d’énergie par effet thermoélectrique (TE), qui peut être utilisée pour convertir de la chaleur perdue en électricité, a reçu une attention soutenue ces dernières décennies. L’efficacité d’un système TE est caractérisé par le facteur de mérite adimensionnel, ZT=(S²σ/κ)T, où S, σ, κ, et T sont respectivement le coefficient Seebeck, la conductivité électrique, la conductivité thermique et la température absolue. Récemment, les matériaux à base de chalcogénures de cuivre ont attiré un intérêt au sein de la communauté de la thermoélectricité du fait de leur conductivité thermique faible, qui conduit à des propriétés thermoélectriques prometteuses. BiCuSeO et BaCu2Se2 sont deux de ces matériaux. Ils possèdent une conductivité thermique intrinsèquement très faible et un coefficient Seebeck élevé. Mais leur conductivité électrique est faible, ce qui limite l’amélioration de leurs propriétés thermoélectriques.Dans cette thèse, la conductivité électrique de BiCuSeO est améliorée par dopage par Ba et par texturation. Se est substitué à S dans BiCuSeO pour réduire les coûts et diminuer la conductivité thermique. Un dopage par Na est effectué dans BaCu2Se2 pour augmenter sa concentration de porteurs et améliorer sa conductivité électrique. / The thermoelectric (TE) energy conversion technology, which can be used to convert wasted heat into electricity, has received much attention in the past decade. The efficiency of TE devices is characterized by the dimensionless figure of merit ZT=(S²σ/κ)T, where S, σ, κ, and T are the Seebeck coefficient, the electrical conductivity, the thermal conductivity, and the absolute temperature, respectively.Recently, copper chalcogenides based materials have attracted extensive interest in the thermoelectric community due to low thermal conductivities, which lead to the promising excellent thermoelectric properties. BiCuSeO and BaCu2Se2 are two of them. They exhibit intrinsically very low thermal conductivity and large Seebeck coefficient. But their electrical conductivity is low, limiting the enhancement of their thermoelectric properties.In this thesis, Ba doping and texture are taken out in BiCuSeO to improve its electrical conductivity. Se is substituted by S in BiCuSeO to decrease its price and decrease its thermal conductivity. Na doping is taken out in BaCu2Se2 to increase its carrier concentration and improve its electrical conductivity.
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Matériaux à base de nanocristaux semi-conducteurs de chalcopyrite pour la conversion thermoélectrique / Semiconducting chalcopyrite nanocrystals based materials for thermoelectric conversionVaure, Louis 27 January 2017 (has links)
Cette thèse présente l’étude de nanocristaux semi-conducteurs pour leur intégration dans des dispositifs de conversion thermoélectrique. Ce phénomène permet de générer un courant à partir d’une différence de température entre deux faces, reliées par deux pieds conducteurs de charges. Les matériaux les plus efficaces à température ambiante sont basés sur le tellurure de bismuth Bi2Te3, qui est toxique et coûteux. Une étude théorique et bibliographique, portant sur les grandeurs caractéristiques de la conversion thermoélectrique, est réalisée. Elle permet de déterminer les matériaux d’intérêt en fonction de leur coût et de leur efficacité, que l’on peut optimiser à travers différents paramètres d’influence. La chalcopyrite, CuFeS2, présente des propriétés intéressantes en thermoélectricité, et offre une alternative intéressante aux matériaux classiques, car composée d’éléments abondants et non-toxiques. La synthèse par voie chimique choisie permet de contrôler la composition du matériau, et d’obtenir des nanocristaux de taille contrôlée entre 30 et 50 nm, pour diffuser les phonons dans le matériau et diminuer sa conductivité thermique. La thèse s’oriente autour de l’étude de ces nanocristaux semi-conducteurs de CuFeS2, organisée en deux parties principales.La première partie décrit la synthèse par voie chimique des nanocristaux et leur étude structurale. Deux méthodes de synthèse sont optimisées et permettent de contrôler finement la stœchiométrie du matériau, et d’accéder à des cristaux de différentes tailles et morphologies. Une étude complète de la composition des nanocristaux est réalisée par XPS, EDX et thermogravimétrie. L’étude du matériau par diffraction des rayons X met en évidence l’influence de la composition chimique des nanocristaux, et des conditions de température et de pression sur la phase cristalline du matériau. Une transition de phase de la wurtzite vers la chalcopyrite est décrite.Dans la seconde partie sont étudiées les propriétés thermoélectriques des nanocristaux synthétisés. Leur mise en forme en pieds thermoélectriques monolithiques est décrite, ainsi que l’optimisation de leurs propriétés thermoélectriques à travers trois stratégies. Le matériau obtenu est un conducteur de type n, qui permet la conduction des électrons. Sa conductivité thermique est réduite par nanostructuration. La première stratégie consiste à faire varier la composition des nanocristaux, et plus particulièrement le rapport entre charges cationiques et anioniques, pour modifier le taux de dopage du matériau, et ainsi modifier sa conductivité électrique et son coefficient Seebeck. La seconde voie d’amélioration consiste à remplacer les ligands isolants présents après la synthèse des nanocristaux par des ligands courts et conducteurs, pour augmenter la conductivité électrique du matériau. Enfin, des nanoparticules métalliques d’argent, d’étain et de cuivre sont introduites en mélange avec les nanocristaux afin d’augmenter la conductivité électrique du matériau nanocomposite ainsi créé.Cette thèse apporte des éléments de compréhension entre la structure et la composition de matériaux ternaires et leurs propriétés thermoélectriques, et permet d’envisager une amélioration de leurs performances. Les matériaux optimisés présentent des efficacités comparables aux résultats de la littérature pour cette famille de matériaux, notamment autour de la température ambiante. A travers une combinaison efficace des facteurs d’influence étudiés, ces efficacités pourront être dépassées lors de futurs travaux, et le matériau intégré à un dispositif de conversion thermoélectrique couplé à une cellule photovoltaïque, pour la conversion de l’énergie solaire par les deux phénomènes. / This thesis presents the studies made on semiconducting nanocrystals, to be integrated in thermoelectric generators. Thermoelectricity generates a current through a temperature difference between two faces, connected by thermoelectric legs which conduct the charges. Nowadays, the most efficient materials at room temperature contains tellurium, which is toxic and expansive due to its scarcity. A study on theory and literature is carried to understand the underlying phenomena which help us explain the thermoelectric conversion. The potentially interesting materials are selected for their cost and efficiency, tunable by varying different parameters. Chalcopyrite, of formula CuFeS2, presents promising properties for thermoelectricity, and offers an interesting way to replace classic materials as a non-toxic earth-abundant substitute. The chemical synthesis allows to control the composition of the material and to obtain 30 to 50 nm sized nanocrystals, able to scatter phonons and diminish the thermal conductivity of the material as a consequence. The thesis is describing the study of these semiconducting CuFeS2 nanocrystals, and is divided in two main parts.The first part describes the chemical synthesis of the nanocrystals and the characterization of their structure. Two ways of synthesis are developed and optimized, allowing to control the stoichiometry of the material, and to obtain crystals of different sizes and shapes. A complete study of the composition of the nanocrystals is made by XPS, EDX and thermogravimetric analysis. The study of the material by X-ray diffraction shows that the chemical composition of the nanocrystals, as well as the temperature and the pressure, have an influence on their crystalline phase. A phase transition from the wurtzite phase to the chalcopyrite phase is described.In the second part, are studied the thermoelectric properties of the nanocrystals. Their preparation as solid materials is described. The improvement made on their efficiency is following three main paths. The obtained material is a n type conductor, which means it carries electrons. Its thermal conductivity is reduced due to the nanostructuration. The first strategy consists in varying the composition of the nanocrystals, and especially the ratio between positive and negative charges, carried by ions, to modify the electrical conductivity and Seebeck coefficient of the material through doping. The second way of improvement is by replacing the native insulating ligands of the nanocrystals by short inorganic conducting ones, to increase the electrical properties of the material. Finally, metallic nanoparticles, of silver, tin and copper, are blended with the nanocrystals to improve the electrical conductivity of the resulting nanocomposite material.This thesis helps one to understand the relation between structure, composition and thermoelectrical properties of ternary semiconducting materials. It is possible to think of ways of improvement for the studied materials. Our best results are state of the art for this family of materials, especially around room temperature. There is room for improvement, with a proper combination of the studied parameters. During a future work, the optimized material could be integrated to a thermoelectric - photovoltaic device, for conversion of the solar energy through the two phenomena.
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Thermal Fluctuations Tunneling in Doped Conjugated PolymersStedman, Troy C. 26 February 2015 (has links)
The possibility of using conducting polymers as organic alternatives to widely used inorganic materials for thermoelectric (TE) applications has received much attention in the past few decades. Since conducting polymers are generally inefficient compared to inorganic TE materials, research into their underlying transport mechanisms is required to improve their efficiency. We use a model based on the effects of local thermal fluctuations to characterize the transport in conducting polymer composites. With this model, full linear responses for the current and electronic heat current are obtained. From these responses, the local temperature dependent conductivity, electronic contribution to the thermal conductivity, and Seebeck coefficient are extracted and related to those of the composite material through an effective medium theory. The resulting simple expressions for the TE transport properties are easy to use and can improve our understanding of transport in conducting polymers. An example of how to use the model is given for a parabolic tunneling barrier and comparisons to experimental data are also provided.
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Anisotropy of thermoelectric power in bismuth tellurideJanuary 1961 (has links)
Jane Hodgson Dennis. / "January 15, 1961." "This report is identical with a thesis submitted to the Department of Electrical Engineering, M.I.T., in partial fulfillment of the requirements for the degree of Doctor of Philosophy." / Bibliography: p. 52. / Army Signal Corps Contract No. DA36-039-sc-78108. Dept. of the Army Task 3-99-20-001 and Project 3-99-00-000.
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Certain aspects concerning the thermal environment of underground power cables /Halfter, N. A., January 1972 (has links)
Thesis (Ph. D.)--University of Hong Kong. / Mimeographed.
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Thermal resistance effects in underground power cable bundles.Foo, Pik-yue, January 1969 (has links)
Thesis--M. Sc.(Eng.), University of Hong Kong. / Mimeographed.
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Investigation of the thermal performance of solar water heating systems on low cost housing.Manganye, Frans. January 2012 (has links)
M. Tech. Electrical Engineering. / Investigates the thermal performance of solar water heating systems on low cost housing environment as a component of the measurement and verification process of the sustainable energy management.
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Certain aspects concerning the thermal environment of underground power cablesHalfter, N. A. January 1972 (has links)
published_or_final_version / Electrical Engineering / Doctoral / Doctor of Philosophy
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