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The ability to manipulate material response to dynamical processes depends on the extent of understanding of transport properties and their variation with chemical and structural features in materials. In this perspective, current work focuses on the thermal and electronic transport behavior of technologically important bulk and nanomaterials. Strontium titanate is a potential thermoelectric material due to its large Seebeck coefficient. Here, first principles electronic band structure and Boltzmann transport calculations are employed in studying the thermoelectric properties of this material in doped and deformed states. The calculations verified that excessive carrier concentrations are needed for this material to be used in thermoelectric applications. Carbon- and boron nitride-based nanomaterials also offer new opportunities in many applications from thermoelectrics to fast heat removers. For these materials, molecular dynamics calculations are used to evaluate lattice thermal transport. To do this, first, an energy moment term is reformulated for periodic boundary conditions and tested to calculate thermal conductivity from Einstein relation in various systems. The influences of the structural details (size, dimensionality) and defects (vacancies, Stone-Wales defects, edge roughness, isotopic disorder) on the thermal conductivity of C and BN nanostructures are explored. It is observed that single vacancies scatter phonons stronger than other type of defects due to unsatisfied bonds in their structure. In pristine states, BN nanostructures have 4-6 times lower thermal conductivity compared to C counterparts. The reason of this observation is investigated on the basis of phonon group velocities, life times and heat capacities. The calculations show that both phonon group velocities and life times are smaller in BN systems. Quantum corrections are also discussed for these classical simulations. The chemical and structural diversity that could be attained by mixing hexagonal boron nitride and graphene provide further avenues for tuning thermal and electronic properties. In this work, the thermal conductivity of hybrid graphene/hexagonal-BN structures: stripe superlattices and BN (graphene) dots embedded in graphene (BN) are studied. The largest reduction in thermal conductivity is observed at 50% chemical mixture in dot superlattices. The dot radius appears to have little effect on the magnitude of reduction around large concentrations while smaller dots are more influential at dilute systems.

Thesis (M.S.)--Ohio State University, 2008. / Title from first page of PDF file. Includes bibliographical references (p. 64-66).

Thesis (Ph. D.)--University of California, Riverside, 2009. / Includes abstract. Includes bibliographical references (leaves 122-126). Issued in print and online. Available via ProQuest Digital Dissertations.

Thesis (M.S.)--University of Missouri-Columbia, 2005. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (December 20, 2006) Includes bibliographical references.

L'utilisation de dispositifs thermoélectriques à base de films minces en SiGe est envisagée dans de nombreuses applications comme la micro-génération de puissance ou le refroidissement localisé de composants microélectroniques. Le SiGe possède en effet un net avantage en terme d'integrabilite mais souffre cependant d'un déficit en terme de performances. Dans le cadre de cette thèse, nous nous sommes intéressés à la nanostructuration de ce matériau en super-réseau de boîtes quantiques (SRBQ), celle-ci devant permettre une forte augmentation de son facteur de mérite, rendue possible par une forte altération du transport thermique à l'échelle nanométrique. La réalisation, par un outil CVD de type industriel, à 750 °C, de SRBQ monocristallins lourdement dopés est présentée à partir d'analyses morphologiques (AFM), structurales (MEB, MET) et chimiques (SIMS). Des phénomènes de forts échanges Si-Ge pendant la croissance sont notamment mis en évidence et corrélés avec des mesures de conductivité thermique qui ne démontrent pas un effet significatif des boîtes sur le transport thermique. L'élaboration de structures polycristallines originales est également présentée. Enfin, la question cruciale de la détermination du facteur de mérite est abordée, notamment concernant les problèmes d'incertitudes de mesure. Une / Use of SiGe thin film thermoelectric devices is planed in many applications such as power microgeneration or local cooling of microelectronic components. One main advantage of SiGe relies on its ability to be monolithically integrated in ICs. However, SiGe is affected by a low coefficient of performance. Within the framework of this thesis, we focused on the nanostructuration of this material in the form of quantum dot superlattices (QDSL), which is expected to allow a strong increase of its figure-of-merit, by altering thermal transport at the nanometer scale. The growth of heavily doped monocrystalline QDSL in an industrial CVD tool at 750°C is presented from morphological (AFM), structural (SEM, TEM) and chemical (SIMS) analysis. Strong Si-Ge intermixing phenomenons are notably brought out and correlated with thermal conductivity measurements that do not demonstrate a significant effect of dots on thermal transport. The growth of original polycrystalline structures is also presented. Eventually, the crucial question of the figure-of-merit determination is addressed in particular with regard to the measurement uncertainty problem. One solution consisting in measuring simultaneously several electrical, thermal and thermoelectric parameters on a same sample is put forward and concretely implemented by the simultaneous fabrication of adapted test devices.

abstract: The use of nanoparticle-in-matrix composites is a common motif among a broad range of nanoscience applications and is of particular interest to the thermal sciences community. To explore this morphological theme, crystalline inorganic composites were synthesized by mixing colloidal CdSe nanocrystals and In2Se3 metal chalcogenide complex (MCC) precursor in hydrazine solvent and then thermally transform the MCC precursor into a crystalline In2Se3 matrix. The volume fraction of CdSe nanocrystals was varied from 0 to ~100% .Rich structural and chemical interactions between the CdSe nanocrystals and the In2Se3 matrix were observed. The average thermal conductivities of the 100% In2Se3 and ~100% CdSe composites are 0.32 and 0.53 W/m-K, respectively, which are remarkably low for inorganic crystalline materials. With the exception of the ~100% CdSe samples, the thermal conductivities of these nanocomposites are insensitive to CdSe volume fraction.This insensitivity is attributed to competing effects rise from structural morphology changes during composite formation. Next, thermoelectric properties of metal chalcogenide thin films deposited from precursors using thiol-amine solvent mixtures were first reported. Cu2-xSeyS1-y and Ag-doped Cu2-xSeyS1-y thin films were synthesized, and the interrelationship between structure, composition, and room temperature thermoelectric properties was studied. The precursor annealing temperature affects the metal:chalcogen ratio, and leads to charge carrier concentration changes that affect Seebeck coefficient and electrical conductivity. Incorporating Ag into the Cu2-xSeyS1-y film leads to appreciable improvements in thermoelectric performance. Overall, the room temperature thermoelectric properties of these solution-processed materials are comparable to measurements on Cu2-xSe alloys made via conventional thermoelectric material processing methods. Finally, a new route to make soluble metal chalcogenide precursors by reacting organic dichalcogenides with metal in different solvents was reported. By this method, SnSe, PbSe, SnTe and PbSexTe1-x precursors were successfully synthesized, and phase-pure and impurity-free metal chalcogenides were recovered after precursor decomposition. Compared to the hydrazine and diamine-dithiol route, the new approach uses safe solvent, and avoids introducing unwanted sulfur into the precursor. SnSe and PbSexTe1-x thin films, both of which are interesting thermoelectric materials, were also successfully made by solution deposition. The thermoelectric property measurements on those thin films show a great potential for future improvements. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016

Made available in DSpace on 2014-10-09T12:31:09Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:07:11Z (GMT). No. of bitstreams: 1 01380.pdf: 5557190 bytes, checksum: 1c2e6724a07ba6a59476d1527990afa2 (MD5) / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

Les travaux présentés dans cette thèse portent sur la synthèse et la caractérisation structurale et physico-chimique de composés sulfures à propriétés thermoélectriques. Un intérêt a été porté sur plusieurs familles de composés sulfures avec pour objectif le développement et/ou l’optimisation des performances thermoélectriques de ces composés.Un premier composé binaire, TiS2, a été élaboré par mécanosynthèse suivi d’une étape de densification par Spark Plasma Sintering (SPS). Les caractérisations structurales ont démontré un effet du processus d’élaboration sur la microstructure ainsi que sur la stœchiométrie du composé. Ce procédé induit une réduction considérable de la conductivité thermique mais aussi électrique du matériau ne permettant pas d’optimiser la figure de mérite du composé. Un second composé a ensuite été développé selon deux voies de synthèses (conventionnelle et mécanosynthèse), le composé ternaire Cu4Sn7S16. Il a été mis en évidence que ce composé semi-conducteur possède une structure complexe qui favorise une conductivité thermique intrinsèquement faible. Les propriétés thermoélectriques ainsi que l’influence de la non-stœchiométrie sur ce composé ont été rapportées. Enfin les composés CuCoxTi2-xS4 et Cu26V2Sn6S32 ont été au cœur des derniers résultats présentés. Ces composés présentent des propriétés de transport plus métalliques propices à l’obtention de facteurs de puissance plus élevés que dans composé Cu4Sn7S16. D’une part, l’élaboration du matériau et l’influence du taux de Co sur le transport électronique ont été discutées sur le composé CuCoxTi2-xS4. D’autre part, l’élaboration par la mécanosynthèse ainsi que les conditions de densification ont été reliés aux propriétés de transport du composé Cu26V2Sn6S32. Une amélioration significative des performances thermoélectriques de ce dernier a été rapportée.Ces différentes études ouvrent des perspectives intéressantes dans l’élaboration et l’optimisation des composés sulfures en vue d’applications industrielles. / The work presented in this thesis focuses on the synthesis and the structural/physicochemical characterizations of sulfide compounds with thermoelectric properties. Several families of sulphide compounds have been studied with the aim of developing and/or optimizing their thermoelectric performances.A binary compound, TiS2, was synthesized by mechanical alloying followed by a densification using Spark Plasma Sintering (SPS). The structural characterizations have revealed the effect of the elaboration on the microstructure and stoichiometry of the compound. This process induces a considerable reduction in the thermal and electrical conductivity of the material which hindered the optimization of the figure of merit. The ternary compound Cu4Sn7S16 was then developed according to two synthetic routes (conventional and mechanical alloying). It has been demonstrated that this semiconductor compound has a complex structure which promotes an intrinsic low thermal conductivity. The influence of the non-stoichiometry on the thermoelectric properties has been reported. Finally, the CuCoxTi2-xS4 and Cu26V2Sn6S32 compounds were the last interesting results presented. These compounds show metallic transport properties with high power factors. The synthesis and the influence of the Co content on the electronic transport properties have been discussed on the CuCoxTi2-xS4 compound. The effect of mechanical alloying and densification conditions were related to the transport properties of the Cu26V2Sn6S32 compound. Substantial improvement of the thermoelectric performances as reported.These various studies open interesting perspectives for the development and optimization of sulfide compounds for industrial application.

Ces travaux de thèse portent sur l’étude des propriétés chimiques et physiques de chalcogénures polaires (CPs) à valence normal ou hypervalents. Ces composés appartiennent à la famille des intermétalliques polaires, et s’inscrivent donc dans le champ d’étude de la chimie des intermétalliques. Le but premier de cette étude est la synthèse de nouveaux composés de structure cristalline complexe, afin d’étudier la relation entre la structure cristalline, la nature des liaisons chimiques et les propriétés physiques, déterminées par des mesures expérimentales et des analyses théoriques. Les CPs ont été choisis comme matériaux d’étude car ils se situent à la frontière entre les matériaux métalliques et non-métalliques. Pour ces matériaux (les CPs), les propriétés chimiques sont gouvernées par l’interaction entre les différents types de liaisons – covalente, métallique et ionique – ouvrant la voie à l’étude des liens entre structure cristalline et liaisons chimiques. La recherche de matériaux à structure complexe permet de cibler de potentiels matériaux thermoélectriques prometteurs, puisque la complexité structurale est souvent reliée à une faible conductivité thermique, qui est une propriété clé des thermoélectriques. Les matériaux thermoélectriques transforment la chaleur en électricité, et sont donc au cœur des enjeux économiques et environnementaux actuels. La découverte de thermoélectriques à bon rendement appartenant à la famille des chalcogénures, tels que PbTe, Bi2Te3, CsBi4Te6 et le composé superionique Cu2-xSe ont orienté les recherches vers l’exploration de composés chalcogénures de type Cu- et Pn- (Pn = Sn, Bi), et ont motivé l’étude de matériaux voisins, comme BaBiTe3 (chapitre V). Une des possibilités pour induire des structures complexes est d’obtenir un transfert de charge du cation (Ba, Se) vers une structure anionique, créant ainsi des réseaux covalents anioniques complexes sous forme de chaines ou de couches, qui sont à l’origine de propriétés physiques intéressantes. Une paire d’électrons libres et stéréoactifs peut également augmenter la complexité de la structure, via une distorsion des polyèdres de coordination, ce qui justifie l’étude de matériaux contenant des éléments de type Pn comme Bi ou Sb. L’analyse des propriétés physiques ainsi que l’étude de la structure cristalline et des liaisons chimiques de chalcogénures polaires de structure complexe, certains connus et d’autres découverts au cours de ce travail de thèse, ont résulté en des découvertes prometteuses. / This thesis has its focus on the chemistry and physical properties of normal valence and hypervalent polar chalcogenides (PCs). The motivation for this study lies in the synthesis of new compounds with complex crystal structures. It aims at understanding the relationship between crystal structure, chemical bonding and physical properties through experimental and theoretical analyses. PCs are of special interest since they are at the interface between metals and nonmetals. The chemistry at this interface is governed by the interplay between covalent, metallic and ionic bonding, which makes it interesting and challenging to understand the relationship between crystal structure and chemical bonding. The main reason for aiming at structural complexity is to target new materials with low thermal conductivities – a key requirement for efficient thermoelectric materials. Thermoelectrics are capable of converting waste heat into electricity, which is of considerable economic and environmental interest. Previous discoveries of efficient, chalcogenide-based thermoelectrics such as PbTe, Bi2Te3, CsBi4Te6 and superionic Cu2-xSe motivated the exploratory search for new Cu- and Pn-chalcogenides (Pn = Sb, Bi) and to study related materials such as BaBiTe3 (cf. chapter V). One route towards complex crystal structures is to use a charge transfer from cations such as Sr or Ba to an anionic framework in order to create complex anionic, covalent networks (e.g. channels or layers) which can lead towards interesting physical properties. Stereoactive lone pairs can increase the structural complexity through distortions of the coordination polyhedra, which is one reason for studying systems containing Pn atoms such as Sb and Bi. Probing the physical properties and studying the crystal structure and chemical bonding of both, new and known polar chalcogenides with complex crystal structures resulted in interesting new discoveries, i.e. new compounds and crystal structures as well as unexpected physical properties. The thesis is separated in normal valence compounds, which can be entirely described by classical two-center two-electron (2c-2e) bonds (i.e. where the electrons are fully localized) and those, which contain hypervalent bonds and networks in which the electrons are partially delocalized. It contains four main parts: the study of 1) A0.5CuZrSe3 et ACuYSe3 (A = Sr, Ba) belonging to a family of compounds known as the “1113 family”, 2) Ba2FePnSe5 (Pn = Sb, Bi), 3) Ba4Cu8Se13 and 4) BaBiTe3-xSex (x = 0, 0.05, 1 and 3).