Compared to wafer based solar cells, thin film solar cells greatly reduce material cost and thermal budget due to low temperature process. Monolithically manufacturing allows large area fabrication and continuous processing. In this work, several photovoltaic thin films have been developed by rf-PECVD including a-Si:H and μc-Si, both intrinsic and doped on Corning 4 inch glass substrate at low temperature. The conductivity of n type and p type μc-Si at 180ºC was 17S/cm and 7.1E-2S/cm, respectively. B dopants either in a-Si:H or μc-Si films require higher plasma power to get active doping. The B2H6-to-SiH4 flow ratio for p type μc-Si lies from 0.01 to 0.025. Chamber conditions have critical effect on film quality. Repeatable and superior results require a well-established cleaning passivation procedure. Moreover, μc-Si films have been deposited from pure silane on glass substrate by modified rf-ICP-CVD. The deposition rate has been dramatically increased to 5Å/s due to little H2 dilution with crystalline fraction was around 69%, and 6.2Å/s with crystalline fraction 45%. Microstructure started to form at 150ºC with a thin incubation layer on the glass substrate, and became fully dense conical conglomerates around 300nm where conductivity and crystallinity saturated. Additionally, a-SiGe:H films have been developed by modified rf-ICP-CVD. The optical band gaps have been varied from 1.25 to 1.63eV by changing SiH4-to-GeH4 ratio. Also high temperature resulted in low bandgap. Cross-section TEM showed some microcrystllites appeared near interface region. Heterojunction solar cells on p type c-Si wafer have been fabricated using films developed in this thesis. Interference fringes in EQE disappeared on either textured substrate or cells with lift-off contacts. Maximum EQE was 87% around 700nm. I-V curves have also been studied where the interesting kink suggests a counter-diode has formed between emitter region and contacts.

Transparent oxide semiconductors (TOSs) are materials that exhibit electrical conduction and optical transparency. The traditional applications of these materials are transparent conducting oxides in flat-panel displays, light-emitting diodes, solar cells, and imaging sensors. Recently, significant research has been driven to extend state-of-the-art applications such as thin-film transistors (TFTs). A new and rapidly developing field is emerging, called transparent electronics. This thesis advances transparent electronics through developing a new technique to fabricate TOSs and demonstrating their applications to active semiconductor devices such as diodes and TFTs. Ion beam assisted evaporation (IBAE) is used to deposit two common TOSs: zinc oxide (ZnO) and indium oxide (In2O3). The detailed material study is carried out through various characterization of their electrical properties, chemical composition, optical properties, crystal structure, intrinsic stress, topology, and morphology, as well as an investigation of thin-film property as a function of the deposition parameters: ion flux and energy, and deposition rate. The study proves that IBAE technique provides the capability for fabricating TOSs with controllable properties. By utilizing the newly developed semiconducting ZnO, p-NiO/i-ZnO/n-ITO and n-ITO/i-ZnO/p-NiO heterostructure photodiodes with a low leakage are proposed and assessed. Analysis of their current-voltage characteristics and current transient behaviour reveals that the dominant source of leakage current stems from the deep defect states in the intrinsic zinc oxide layer, where its dynamic response at low signal levels is limited by the charge trapping. The exploration of the photoconduction mechanism and spectral response confirms that such photodiodes are potentially applicable for ultraviolet (UV) sensors. The comparative study of both device structures provides further insights into the leakage current mechanisms, p-i interface properties, and quantum efficiency. Secondly, with the novel semiconducting In2O3, TFTs are fabricated and evaluated. The device performance is optimized by addressing the source/drain contact issue, lowering the intrinsic channel resistance, and improving the dielectric/channel interface. The best n-channel TFT has a high field-effect mobility of ~30 cm^2/Vs, a high current ON/OFF ratio of ~10^8, and a sub-threshold slope of 2.0 V/decade. More important, high-performance indium oxide TFTs here are integrated with the silicon dioxide and silicon nitride gate dielectrics by conventional plasma-enhanced chemical vapour deposition, which makes indium oxide TFT a competitive alternative for next generation TFTs to meet the technical requirements for flat-panel displays, large area imager arrays, and radio frequency identification tags. The stability study shows that indium oxide TFTs are highly stable with a very small threshold voltage shift under both a long-term constant voltage and long-term current stress. The dynamic behaviour indicates factors that affect the operation speed of such TFTs. A descriptive model is proposed to link the material properties and the processing issues with the device performance to facilitate further research and development of TOS TFTs. The research described in this thesis is one of the first investigations of the fabrication of TOSs by the IBAE and their applications to a variety of thin-film devices, particularly UV sensors and TFTs.

A comparison of the composition and structure of carbon films deposited by ns and fs laser ablation of graphite is the subject of this thesis. In addition, the effect of irradiation on the surface of graphite has been investigated in detail. Laser-induced phase transitions from graphite to sp-bonded carbon and trans-polyacetylene chains as well as the formation of nano-diamond have been observed after irradiation with fs pulses. An optical orientation mechanism involving both electric and magnetic interactions is proposed to understand the formation of nano-stripes and other structures on irradiated graphite surfaces. These phenomena are not observed after nanosecond laser irradiation. Tetrahedral carbon (ta-C) films deposited at cryogenic temperatures using ns laser radiation consist of sub-micron graphitized grains embedded in a matrix of sp3-hybridized bonded carbon. Nano-buckling is evident in ta-C films deposited by fs ablation where the composition is found to consist of mixed sp, sp2, and sp3 – hybridized carbons species. It is found that the concentration of sp-bonded chains is negligible in ns-C films. Surface enhanced Raman spectroscopy has been used to characterize molecular species in ns and fs carbon films. Time of flight mass spectroscopy has been used to study plume species produced by laser ablation. It is also found that polyyne molecules can be formed by fs laser dissociation of small molecules in organic solvents. This process is accompanied by the deposition of hexagonal nano-diamond films on substrates placed near the laser focus during irradiation. This opens a new path in the synthesis of 1D conducting molecules and nano-diamond materials for nano-science applications. Quantum chemical calculations involving density functional theory (Gaussian '03) have been carried out in support of this work and have been used to study Raman and IR vibrational modes of several novel carbon molecules synthesized in ta-C films and in the liquid phase. These studies have been extended to assist in the identification of astronomical spectra.

För att undersöka skillnad i prestationsförmåga mellan celler sensiterade med växtextraktsbaserad färg, och celler sensiterademed ruteniumkomplex-baserad färg, samt huruvida presskraften påverkar en cells prestationsförmåga, tillverkades icke-slutna fotoelektrokemiska färg-sensiterade solceller med tunnfilmsfotoelektroder av pressad, nanoporös titandioxid. Cellerna pressades med tre olika presskrafter och sensiterades med växtextraktsfärg från rödkål, rödbeta, viol och henna, samt en ruteniumkomplex-baserad färg som fick utgöra kontrollbetingelse. För varje cell uppmättes IPCE- och iV-värde och motsvarande fyllnadsgrad (fill factor) och dessa jämfördes. Ingen signifikant skillnad kunde fastställas mellan celler pressade med olika presstryck. Bland cellerna sensiterade med växtextraktbaserad färg presterade rödbeta bäst. Cellen med högst effektivitet hade fyllnadsgraden 70%. Emellertid uppvisade de växtfärgade cellerna genomgående sämre effektivitet än de rutenium-sensiterade och fotoströmmarna var mycket låga. IPCE-värdena var allmännt låga: den bäst presterande cellen hade ett IPCE-värde på något över 0,06 i våglängdsintervallet 440-470 nm. En förklaring till detta är de övriga ämnen som förutom pigment återfinns i de växtbaserade färgerna. Dessa hindrar pigmentmättnad och förhindrar att växtfärgen når ruteniumfärgens intensitet. En annan anledning består i svårigheten att passa ihop energinivåerna i cellens elektrolyt-halvledarsystem med energinivåerna hos pigmentet i växtfärgen. / Non-sealed photoelectrochemical dye sensitised solar cells (DSSC) with pressed nanoporous TiO2 thin film photoelectrodes were manufactured for the purposes of finding out whether plant extractbased dye sensitised cells can perform as well as ruthenium complex-based dye sensitised cells and whether the pressing force affects the cell performance. The cells were pressed with three different pressing forces and sensitised with plant extracts from red cabbage, beetroot, violet and henna, as well as with a ruthenium complex-based dye for comparison. The IPCE and iV values and the corresponding fill factors of the cells were evaluated and compared. No significant difference between the cells pressed with different pressing forces could be established. Among the plant extract-based dye sensitised cells the ones sensitised with beetroot extract performed best. The cell that achieved the highest efficiency had a fill factor of 70%. Compared to the ruthenium-sensitised cells the overall performance of the plant dye sensitised cells were very poor and the produced photocurrents very low. The IPCE values were generally low: one of the best-performing cells had an IPCE value of slightly over 0.06 in the 440-470 nm wavelength ranges. One reason for this is that it is difficult to obtain a plant extract dye as intense and deep in colour as ruthenium complex-based dyes, since pigment saturation is obstructed by the presence of other chemical compounds in the plant extracts. Another is that it is a delicate and difficult matter to match the energy levels in the electrolyte-semiconductor system with the energy levels of the pigments in the plant extract dye.

This report describes the growth and characterization of thin amorphous samarium-cobalt alloy films. The samarium-cobalt alloy was grown by DC magnetron sputtering in the presence of an external magnetic field parallel to the thin film. The external magnetic field induces a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy. The thin films were characterized with x-ray scattering, and the magnetic anisotropy was characterized with the magneto optic Kerr effect. The measurements showed a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy films. It is not clear how amorphous the samples really are, but there are indications of crystalline and amorphous areas in the alloys.

Transparent oxide semiconductors (TOSs) are materials that exhibit electrical conduction and optical transparency. The traditional applications of these materials are transparent conducting oxides in flat-panel displays, light-emitting diodes, solar cells, and imaging sensors. Recently, significant research has been driven to extend state-of-the-art applications such as thin-film transistors (TFTs). A new and rapidly developing field is emerging, called transparent electronics. This thesis advances transparent electronics through developing a new technique to fabricate TOSs and demonstrating their applications to active semiconductor devices such as diodes and TFTs. Ion beam assisted evaporation (IBAE) is used to deposit two common TOSs: zinc oxide (ZnO) and indium oxide (In2O3). The detailed material study is carried out through various characterization of their electrical properties, chemical composition, optical properties, crystal structure, intrinsic stress, topology, and morphology, as well as an investigation of thin-film property as a function of the deposition parameters: ion flux and energy, and deposition rate. The study proves that IBAE technique provides the capability for fabricating TOSs with controllable properties. By utilizing the newly developed semiconducting ZnO, p-NiO/i-ZnO/n-ITO and n-ITO/i-ZnO/p-NiO heterostructure photodiodes with a low leakage are proposed and assessed. Analysis of their current-voltage characteristics and current transient behaviour reveals that the dominant source of leakage current stems from the deep defect states in the intrinsic zinc oxide layer, where its dynamic response at low signal levels is limited by the charge trapping. The exploration of the photoconduction mechanism and spectral response confirms that such photodiodes are potentially applicable for ultraviolet (UV) sensors. The comparative study of both device structures provides further insights into the leakage current mechanisms, p-i interface properties, and quantum efficiency. Secondly, with the novel semiconducting In2O3, TFTs are fabricated and evaluated. The device performance is optimized by addressing the source/drain contact issue, lowering the intrinsic channel resistance, and improving the dielectric/channel interface. The best n-channel TFT has a high field-effect mobility of ~30 cm^2/Vs, a high current ON/OFF ratio of ~10^8, and a sub-threshold slope of 2.0 V/decade. More important, high-performance indium oxide TFTs here are integrated with the silicon dioxide and silicon nitride gate dielectrics by conventional plasma-enhanced chemical vapour deposition, which makes indium oxide TFT a competitive alternative for next generation TFTs to meet the technical requirements for flat-panel displays, large area imager arrays, and radio frequency identification tags. The stability study shows that indium oxide TFTs are highly stable with a very small threshold voltage shift under both a long-term constant voltage and long-term current stress. The dynamic behaviour indicates factors that affect the operation speed of such TFTs. A descriptive model is proposed to link the material properties and the processing issues with the device performance to facilitate further research and development of TOS TFTs. The research described in this thesis is one of the first investigations of the fabrication of TOSs by the IBAE and their applications to a variety of thin-film devices, particularly UV sensors and TFTs.

A comparison of the composition and structure of carbon films deposited by ns and fs laser ablation of graphite is the subject of this thesis. In addition, the effect of irradiation on the surface of graphite has been investigated in detail. Laser-induced phase transitions from graphite to sp-bonded carbon and trans-polyacetylene chains as well as the formation of nano-diamond have been observed after irradiation with fs pulses. An optical orientation mechanism involving both electric and magnetic interactions is proposed to understand the formation of nano-stripes and other structures on irradiated graphite surfaces. These phenomena are not observed after nanosecond laser irradiation. Tetrahedral carbon (ta-C) films deposited at cryogenic temperatures using ns laser radiation consist of sub-micron graphitized grains embedded in a matrix of sp3-hybridized bonded carbon. Nano-buckling is evident in ta-C films deposited by fs ablation where the composition is found to consist of mixed sp, sp2, and sp3 – hybridized carbons species. It is found that the concentration of sp-bonded chains is negligible in ns-C films. Surface enhanced Raman spectroscopy has been used to characterize molecular species in ns and fs carbon films. Time of flight mass spectroscopy has been used to study plume species produced by laser ablation. It is also found that polyyne molecules can be formed by fs laser dissociation of small molecules in organic solvents. This process is accompanied by the deposition of hexagonal nano-diamond films on substrates placed near the laser focus during irradiation. This opens a new path in the synthesis of 1D conducting molecules and nano-diamond materials for nano-science applications. Quantum chemical calculations involving density functional theory (Gaussian '03) have been carried out in support of this work and have been used to study Raman and IR vibrational modes of several novel carbon molecules synthesized in ta-C films and in the liquid phase. These studies have been extended to assist in the identification of astronomical spectra.

The principles of dye-sensitized solar cells were studied and are outlined in this thesis. An overview of the basic steps needed to create a DSC isfollowed by detailed experimental information on how to assemble the solar cells that were fabricated in this project. They were based on synthesizednanocrystalline ZnO thin films sensitized by chlorophyll a as well as isolated photopigments from spinach leaves. The nanocrystals werestudied using XRD, and it was confirmed that three different methods of synthesis resulted in ZnO crystals of a few nanometers. The solar cellswere assembled with Au electrodes in a sandwich configuration and their photovoltaic properties were measured. Overall light-to-electricity conversionwas low with the highest efficiency being 0.21 %. An astonishingly low efficiency of 0.0003 % was noted for a thin film which was not thermallytreated, and it is suggested that heat-treatment is of great importance. It was also found that photopigments from spinach can be extractedeasily and used as molecular sensitizer without any demanding purification steps.

Bidirectional reflectance is a fundamental radiative property of rough surfaces. Knowledge of the bidirectional reflectance is crucial to the emissivity modeling and heat transfer analysis. This thesis concentrates on the modeling and measurements of the bidirectional reflectance for microrough silicon surfaces and on the validity of a hybrid method in the modeling of the bidirectional reflectance for thin-film coated rough surfaces. The surface topography and the bidirectional reflectance distribution function (BRDF) of the rough side of several silicon wafers have been extensively characterized using an atomic force microscope and a laser scatterometer, respectively. The slope distribution calculated from the surface topographic data deviates from the Gaussian distribution. Both nearly isotropic and strongly anisotropic features are observed in the two-dimensional (2-D) slope distributions and in the measured BRDF for more than one sample. The 2-D slope distribution is used in a geometric-optics based model to predict the BRDF, which agrees reasonably well with the measured values. The side peaks in the slope distribution and the subsidiary peaks in the BRDF for two anisotropic samples are attributed to the formation of {311} planes during chemical etching. The correlation between the 2-D slope distribution and the BRDF has been developed. A boundary integral method is applied to simulate the bidirectional reflectance of thin-film coatings on rough substrates. The roughness of the substrate is one dimensional for simplification. The result is compared to that from a hybrid method which uses the geometric optics approximation to model the roughness effect and the thin-film optics to consider the interference due to the coating. The effects of the film thickness and the substrate roughness on the validity of the hybrid method have been investigated. The validity regime of the hybrid method is established for silicon dioxide films on silicon substrates in the visible wavelength range. The proposed method to characterize the microfacet orientation and to predict the BRDF may be applied to other anisotropic or non-Gaussian rough surfaces. The measured BRDF may be used to model the apparent emissivity of silicon wafers to improve the temperature measurement accuracy in semiconductor manufacturing processes. The developed validity regime for the hybrid method can be beneficial to future research related to the modeling for thin-film coated rough surfaces.

Recently, active matrix flat-panel displays are widely used in consumer electronic products. With increasing popularity of flat-panel displays, market competition becomes more intense and demands for high performance flat-panel displays are increasing. Low-temperature polysilicon (LTPS) with higher mobility, as well as drive current can integrate electric circuit, such as controllers and memory on glass substrate of display to achieve the purpose of system on panel (SOP). Thus, flat-panel displays can be more compact, while reducing reliability issues and lowering production costs. In this dissertation, we studied the nonvolatile memory for system on panel applications and reducing cost of memory by increasing the memory density or reducing the processing steps. Therefore, we proposed several modes of operation in nonvolatile memory. First, we use channel hot-electron (CHE) to inject electrons into the nitride layer that¡¦s above source or drain sides of SONOS thin film transistor (TFT). Thus, we can increase the memory density by storing two-bit state in a memory cell. In this study, the two-bit memory effect is clearly observed for devices with a shorter gate length after CHE programming; however, the two-bit memory effect is absent in devices with a longer gate length. The gate-length-dependent two-bit memory effect is related to the location of injected electrons in the nitride layer. When electrons are injected into the nitride layer above the channel, they can create an additional energy barrier in the channel thus increasing the threshold voltage of the device to perform the programming operations. However, if electrons are injected into the depletion region at the P-N junction between the drain and the channel, the energy barrier induced by electrons is not significant when exchanging the source and drain electrodes to measure the memory status, and the program effect is not as significant. When the channel length is shorten, the built-in potential between the source and the channel can be decreased, the energy barrier caused by programmed electrons can affect electrons in the channel and increase the threshold voltage. Therefore, the two-bit memory effect can be seen in devices with the shorter gate length after CHE programming. Secondly, we stored charges in the body of the thin film transistor to make the conventional thin-film transistors become a non-volatile memory. This method does not need a floating gate or a tunneling oxide in the memory cell; therefore the memory cost can be reduced. In this study, we used trap-assisted band-to-band thermionic field emission enhanced by self-heating in TFT to produce electron-hole pairs. The hole will be separated by a vertical field under the gate and be injected into the body of TFT to complete the programming operation. The erasing operation is performed by applying a lateral electric field between the source/drain to remove holes in the body of TFT. Thirdly, we proposed an edge-FN tunneling method to allow SONOS TFT possess not only a pixel switch but also a two-bit nonvolatile memory function in a display panel, thus causing the memory density to increase. In this study, we used a channel FN tunneling to program the SONOS TFT. Because the electric field in the gate-to-drain overlap region is larger than that in the channel region, it will cause a smoother electron injection into the nitride layer inside of the gate-to-drain overlap region, which also increases the gate-induced drain leakage (GIDL) current. The edge-FN tunneling method is used to erase electrons in the gate-to-drain overlap region, by doing so, the GIDL current has decreased. The memory status at the source/drain side is determined by the corresponding GIDL current of the SONOS TFT. Fourthly, we stored electrons in the nitride layer at source, channel, and drain regions of SONOS TFT to make sure that TFT possess a three-bit memory effect in a unitary cell, which also allows the memory density to increase significantly. In this study, programming and erasing operations in the source/drain region are performed by channel hot-electron injection and edge-FN tunneling method, while that in the channel region are accomplished by channel FN tunneling. The memory status in the source/drain is determined by the corresponding GIDL current, while that in the channel region by threshold voltage of the device The memory density for the device operated by proposed method can be further increased. In addition, if we store a number of N different types of electrons in those three regions mentioned above, there are N3 status can be stored in a memory cell. The memory density can beyond conventional multi-level-cell (MLC) flash memory. Two-bit memory effect per cell in a MLC flash memory can be achieved by storing four quantitative electrons in the floating gate of the memory device. If we store four quantitative electrons in the nitride layer at source, channel, and drain regions of SONOS TFT, we can obtain 64 memory states or 6-bit memory effect in a memory cell. Thus, the proposed concept is promising to storage the messages in a memory cell beyond four-bit.