<p>Quasicrystals is a new kind of material that have several interesting aspects to it. The unusual atomic structure entails many anomalous and unique physical properties, for example, high hardness, and extremely low electrical and thermal conductivity. In thin films quasicrystals would enable new functional materials with a combination of attractive properties.In this work, AlCuFe and Nanoflex steel, materials that are known to form quasicrystals in bulk, have been deposited as thin films on Si and Al2O3 substrates using DC magnetron sputtering. These thin films were heat treated, and the formation and growth of different phases, among other approximant and quasicrystalline phases, were studied using mainly in-situ X-ray diffraction.During the project several problems with the formation of quasicrystals were encountered, and it is proposed how to overcome these problems, or even how to make use of them. Finally, the quasicrystalline phase was realized, although it was not completely pure. In the end some suggestions for future work is presented.</p>

Detectors and sensors are an integral part of modern electronics and are crucial to highly sensitive applications. Metal-Insulator-Metal (MIM) tunnel junctions have been explored for the past five decades and are still being investigated due to its wide use of applications such as mixers, capacitors, detectors, rectifiers and energy conversion devices. In this research, various designs of thin film based tunnel junctions have been investigated and the optimum one picked for the purpose of a wide band detector up to 10GHz based on their sensitivities. A modified design with an isolation layer incorporating a self-aligning method to increase fabrication throughput was developed. A mask for the reliability testing of multiple devices with different areas was also developed. Nickel Oxide based insulators with different stoichiometries have been incorporated in the fabrication of the device to identify which stoichiometry gives the best performance for high frequency applications. Nickel Oxide (NiO), Zinc Oxide (ZnO) and the combination of the two have been deposited using reactive sputtering and investigated as insulator materials. The bilayer devices showed increased sensitivities at lower turn on voltages and very good efficiencies at 100MHz and 1GHz. Although, the MIM device provides a simple structure, some of the critical parameters required to quantify the device functionality are still being explored. Based on the parameters, a criterion was developed to help engineer a tunnel device for a desired detectivity.

High efficiency photovoltaic solar cells are expected to continue to be important for a variety of terrestrial and space power applications. Solar cells made of optically thick materials often cannot meet the cost, efficiency, or physical requirements for specialized applications and, increasingly, for traditional applications. This dissertation investigates improving the performance of single-junction GaAs solar cells by incorporating InGaAs/GaAs quantum wells and quantum dots to increase their spectral response bandwidth, and by incorporating structures that confine light in the devices to improve their absorption of it. InGaAs/GaAs quantum dots-in-wells extend the response of GaAs homojunction devices to wavelengths >1200 nm. Nanoparticles that are randomly deposited on the top of optically thick devices scatter light into waveguide modes of the device structures, increasing their absorption of electromagnetic energy and improving their short-circuit current by up to 16%. Multiply periodic diffractive structures have been optimized using rigorous software algorithms and fabricated on the back sides of thin film quantum dot-in-well solar cells, improving their spectral response at wavelengths 850 nm to 1200 nm, where only the quantum dot-in-well structures absorb light, by factors of up to 10. The improvement results from coupling of diffracted light to waveguide modes of the thin film device structure, and from Fabry-Perot interference effects. Simulations of absorption in these device structures corroborate the measured results and indicate that quantum well solar cells of ~2 µm in thickness, and which are equipped with optimized backside gratings, can achieve 1 Sun Airmass 0 short-circuit current densities of up to ~5 mA/cm2 (15%) greater than GaAs homojunction devices, and of up to >2 mA/cm2 (7%) greater than quantum well devices, with planar back reflectors. A combination of Fabry-Perot interference and diffraction into waveguide modes of the thin devices is shown to dominate the simulated device response spectra. Simulations also demonstrate the importance of low-loss metals for realizing optimal light trapping structures. Such device geometries are promising for reducing the cost of high efficiency solar cells that may be suitable for a variety of traditional and emerging applications. / text

It is estimated that 90% of new chemical entities in development pipelines exhibit poor aqueous solubility. For compounds not limited by biological membrane permeability, this poor aqueous solubility is the limiting factor in bioavailability. Therefore, the formulation of such drugs has primarily been centered on improving dissolution properties. Traditional approaches for overcoming poor aqueous solubility include salt formation of the active ingredient, complexation, the use of surface active agents, formulation into oil based systems, particle size reduction, or a combination of these methods. More recently amorphous solid dispersions have been explored. Currently, the drug loading within solid dispersions is limited resulting in large quantities of the formulation being required for a therapeutically relevant dose. In the frame of the work herein, Thin Film Freezing was utilized to generate high drug loaded amorphous solid dispersions of the poorly water soluble drug phenytoin utilizing a hydrophilic polymer or an amphiphilic graft copolymer for system stabilization. Additionally a new solvent removal technique, atmospheric freeze drying, was investigated for removal of the solvents used during Thin Film Freezing. The Thin Film Freezing materials were subsequently incorporated into a polymeric carrier for solid dispersion formulation by a novel fusion production technique termed Kinetisol® dispersing. Studies of the solid dispersions produced by Thin Film Freezing revealed an amorphous system had been obtained for both stabilizing polymers. The formulation containing a hydrophilic carrier was capable of achieving supersaturation. Conversely, the amphiphilic graft copolymer demonstrated a phenytoin-polymer interaction resulting in poor dissolution. Atmospheric freeze drying of the Thin Film Freezing product demonstrated that the alternative drying technique generated powders with significantly improved handling properties as a result of reduced electrostatic interactions due to the increased pore size, reduced surface area, larger particle size, and higher, though acceptable, residual solvent levels. The use of Thin Film Freezing powders during Kinetisol Dispersing resulted in a single phase amorphous system while solid dispersions produced from physical mixtures of bulk materials were amorphous two-phase systems. This indicates that the use of amorphous drug compositions during solid dispersion production may increase drug loading in the final system while remaining single phase in nature. / text

In this thesis, we investigate spin-dependent transport through ferromagnet-contacted single-walled carbon nanotubes (SWCNTs), in which charge transport shows the Fabry-Perot (FP) interference effect, the Kondo effect and the Coulomb blockade effect at low temperatures. Hysteric magnetoresistance (MR) is observed in all three transport regimes, which can be controlled by both the external magnetic field and the gate voltage. The MR in the FP interference regime can be well understood by a model considering the intrinsic electronic structure of SWCNTs and the quantum interference effect. In the strongly interacting Kondo regime, the Kondo effect is not suppressed by the presence of nearby ferromagnetism. Several observed MR features including the non-splitted zero-bias Kondo peak and positive MR switching can be explained by the strong Kondo effect and weak ferromagnetism in the leads. In the Coulomb blockade regime, several effects that can be associated with the magneto-Coulomb effect have been observed, and isolated spin accumulation and transport through the SWCNT quantum dot have been realized by a four-probe non-local measurements. We also studied charge transport behavior through organic semiconductor pentacene thin film transistors (OTFTs) in the limit of single- or a few molecular layers of pentacene films. The charge transport in these devices can be well explained by the multiple trapping and release model. The structural disorders induced by the physical and chemical causes, such as grain boundaries, interactions with gate insulator, metal contacts and ambient conditions can be responsible for the localized trap states in the ultrathin layer OTFTs, which are further confirmed by the electric force microscopy (EFM) measurements. / text

Die vorliegende Dissertation beschäftigt sich mit der Herstellung und Charakterisierung von dünnen amorphen Metallschichten. Diese Materialklasse hat durch das Fehlen von klassischen mikrostrukturellen Fehlern wie Versetzungen oder etwa Korngrenzen Vorteile hinsichtlich der mechanischen Belastbarkeit oder beispielsweise Korrosionsbeständigkeit. Die binären Legierungen Ni-Zr und Cu-Ti wurden grundlegend in ihren Phasen-Gefüge-Eigenschaftsbeziehungen insbesondere in Abhängigkeit ihrer Zusammensetzung untersucht. Unter anderem wurden die Oberflächenrauheit und der spezifische elektrische Widerstand bestimmt und im materialwissenschaftlichen Kontext diskutiert. Das Hauptaugenmerk lag auf der Ermittlung der mechanischen Kennwerte wie E-Modul und intrinsische Eigenspannung. Die Kenntnis darüber ist notwendig, wenn in reproduzierbarer Weise Mikroröhren durch Aufrollen aus Dünnschichten dieses Materials hergestellt werden sollen. Eine solche Technologie setzt Eigenspannungsgradienten orthogonal zur Schichtebene voraus, so dass nach Ablösen vom Substrat sich eine Röhrengeometrie durch elastische Relaxation ergibt. In dieser Arbeit wurden die eigenspannungsgenerierenden Effekte in Abhängigkeit des Gefüges und der vorliegenden Phasen analysiert. Die gemessenen konkreten Werte wurden genutzt um erste Röhren gezielt herzustellen. Dabei zeigte sich, dass bereits mit geringem technologischem Aufwand die Röhren sich reproduzierbar und vorhersagbar in ihrer Geometrie fertigen lassen. / This dissertation is addressing the preparation and characterization of thin amorphous metallic films. That material class has its advantages concerning mechanical stability or corrosion resistance due to the lack of classic microstructural defects like dislocations or grain boundaries. Ni-Zr and Cu-Ti as binary alloys were examined thoroughly in their phase-microstructure-property relationships especially in dependency on chemical composition. Beside others the surface roughness and specific electrical resistivity was determined and discussed in material science context. The main focus was on investigation of mechanical characteristic values like Young’s modulus and intrinsic residual stresses. Knowledge on that issue is necessary, when microtubes are to be reproducibly fabricated out of thin films made of these materials. Such a technology requires a stress gradient perpendicular to the layer plane, which leads to a tube geometry after separating it from the substrate due to the effect of elastic relaxation. In the present research the stress generating effects are analyzed with respect to the microstructure and existent phases. The measured actual values were used to produce first test tubes. It is shown, that these tubes can be fabricated in a reproducible and foreseeable manner in geometry even with a low techno-logical effort.

The continuous scaling of microelectronic devices requires high permittivity (high-k) dielectrics to replace SiO₂ as the gate material. HfO₂ is one of the most promising candidates but the crystallization temperature of amorphous HfO₂ is too low to withstand the fabrication process. To enhance the film thermal stability, HfO₂ is deposited using atomic layer deposition (ALD), and incorporated with various amorphizers, such as La₂O₃, Al₂O₃, and Ta₂O₅. The incorporation is achieved by growing multiple ALD layers of HfO₂ and one ALD layer of MO[subscript x] (M = La, Al, and Ta) alternately (denoted as [xHf + 1M]), and the incorporation concentration can be effectively controlled by the HfO₂-to-MO[subscript x] ALD cycle ratio (the x value). The crystallization temperature of 10 nm HfO₂ increases from 500 °C to 900 °C for 10 nm [xHf + 1M] film, where x = 3, 3, and 1 for M = La, Al, and Ta, respectively. The incorporation of La₂O₃, and Ta₂O₅ will not compromise the dielectric constant of the film because of the high-k nature of La₂O₃, and Ta₂O₅. Angle resolved X-ray photoelectron spectroscopy (AR-XPS) reveals that when the HfO₂-to-MO[scubscript x] ALD cycle ratio is large enough (x > 3 and 4 for La and Al, respectively), periodic structures exist in films grown by this method, which are comprised of repeated M-free HfO₂ ultrathin layers sandwiched between HfM[subscript x]O[scubscript y] layers. Generally, the film thermal stability increases with thinner overall thickness, higher incorporation concentration, and stronger amorphizing capability of the incorporated elements. When the x value is low, the films are more like homogeneous films, with thermal stabilities determined by the film thickness and the amorphizer. When the x value is large enough, the periodically-repeated structure may add an extra factor to stabilize the amorphous phase. For the same incorporation concentration, films with an appropriately high periodicity may have an increased thermal stability. The manner by which the periodic structure and incorporated element affect thermal stability is explored and resolved using nanolaminates comprised of alternating layers of [scubscript y]HfO₂ and [xHf + 1M] × n, where y varied from 2 to 20, x varied from 1 to 2, and n varied from 4 to 22. / text

Dealloying refers to the partial, selective dissolution of the less noble component(s) of a binary or ternary alloy precursor, resulting in a noble-rich, porous structure that has high surface area. Such surface structure is beneficial for fuel cells (FC) because FC uses platinum (Pt), a scarce metal, to catalyze the oxygen reduction reaction (ORR) at the cathode surface. In order to characterize the benefit of the dealloying process in FC ORR catalysts with the rotating disk electrode (RDE) technique, a high surface area catalyst support, namely 3M Co’s nanostructured thin film (NSTF), was incorporated into the RDE measurements. NSTF-coated glassy carbon (GC) disks were used in RDE experiments on a Pt/Pt1-xIrx (0.05 < x < 0.3) composition spread. ORR measurements using NSTF-coated GC disks measure the catalytic properties with the same morphology, composition and surface structure as would be found in a fuel cell. A series of Pt1-xCox and Pt1-xNix (0.5 < x < 0.8) dealloy catalyst precursor films were tested using NSTF-coated GC disks in RDE studies. The value of x in Pt1-xMx (M = Ni, Co) was selected to be high in order to examine the dealloying process. The catalyst films were examined by a RDE test protocol that tracked the surface enhancement factor (SEF) and ORR current densities over a large number of test cycles. The aim was to measure the catalytic performance of the Pt-M materials as dealloying took place. The SEF of the PtCo and PtNi materials increased rapidly at the beginning and reached a plateau as high as 50 cm2/cm2 while the specific ORR activities increased as the initial M content in the catalyst precursor increased. The impact of the dealloying process on morphology was examined by completely dealloying a Pt3Ni7 precursor, deposited on mirror-polished GC disks, at a constant potential. As the dealloying process continued, the SEF of the material increased from about 1 cm2/cm2 to > 30 cm2/cm2 and resulted in the formation of whisker-like structures.

In this thesis research on synthesis, microstructure and properties of carbide-based coatings is reported. These coatings are electrically conducting, and can be tailored for high hardness, low friction and wear, along with load-adaptive behaviour. Tailoring these properties is achieved by controlling the relative phase content of the material. Coatings have been synthesised by dc magnetron sputtering, and their structures have been characterised, mainly by X-ray photoelectron spectroscopy and X-ray diffraction. It has been shown that nanocomposites comprising of a nanocrystalline transition metal carbide (nc-MeCx, Me = Ti, Nb or V) and an amorphous carbon (a-C) matrix can result in low contact resistance in electrical contacts. Such materials also exhibit low friction and high resistance to wear, making them especially suitable for application in sliding contacts. The lowest contact resistance is attained for small amounts of the amorphous carbon phase. It has been shown that specific bonding structures are present in the interface between nc-TiCx and the a-C phases in the nanocomposite.  It was found in particular that Ti3d and C2p states are involved, and that considerable charge transfer occurs across the interface, thereby influencing the structure of the carbide. Further design possibilities were demonstrated for TiCx-based nanocomposites by alloying them with weakly carbide-forming metals, i.e., Me = Ni, Cu or Pt.  Metastable supersaturated solid solution carbides, (T1-xMex)Cy, were identified to result from this alloying process. The destabilisation of the TiCx-phase leads to changes in the phase distribution in the deposited nanocomposites, thus providing further control over the amount of carbon phase formed. Additional design possibilities became available through the decomposition of the metastable (Ti1-xMex)Cy phase through an appropriate choice of annealing conditions, yielding either more carbon phase or a new metallic phase involving Me. This alloying concept was also studied theoretically for all 3d transition metals using DFT techniques. It has also been demonstrated that Ar-ion etching (commonly used in the analysis of carbide based nanocomposites) can seriously influence the result of the analysis, especially for materials containing metastable phases. This implies that more sophisticated methods, or considerable care are needed in making these analyses, and that many of the earlier published results could well be in error.

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