This research describes an investigation on the fabrication of CuInSe2-based thin-film solar cells with the device structure of Al/ZnO:Al/ZnO/CdS/CIS/Mo/SLG at the substrate temperature of 450oC, which is at least 100oC below the temperature currently used for depositing CIS thin films. A great advantage for the low temperature process is that the polymer material can be used as substrate and it is feasible to make lightweight and flexible thin-film solar cells. In this work, we used a co-evaporation technique with an introduction of Sb during the film deposition process to modify the film growth mechanisms and produce the CIS film with compact grain structure and smooth surface morphology. In most cases, there was only tiny amount of Sb existed in the film as a p-type dopant. In some cases, second phases of Sb compounds could be detected in the film as the Sb flux was kept too high during the film deposition stage. The I-V characteristics measured under the AM1.5 condition for the solar cell using a CIS:Sb film as the absorber showed that the open circuit voltage (Voc) was 0.364 V, short circuit current (Jsc) was 48.16 mA/cm2, fill factor (FF) was 44.5%, and energy conversion efficiency (£b) was 8%. The device with the same layer structure except the use of CIS film prepared without the addition of Sb and at a higher substrate temperature of 550oC had a comparable device performance but a slightly lower efficiency, i.e. Voc=0.325 V, Jsc=48.54 mA/cm2, FF=45.1%, £b=7.4%. It is clear that a lower temperature process using Sb to modify the growth process can be successful to obtain a device quality CIS layer. In addition, a CIGS thin-film solar cell was also fabricated and its device properties were Voc=0.392 V, Jsc=37.28 mA/cm2, FF=46.2%, and £b=7.0%. We see that the addition of Ga to increase the bandgap do increase the Voc and decrease the Jsc. However, a low efficiency of this cell indicates that further improvement in fill factor of the cell is a necessary.

Utilizing bulk micromachining technology, this thesis aimed to develop a flexural plate-wave(FPW) device with novel groove reflection microstructure for high-sensitivity and low insertion-loss biomedical microsystem applications. The influences of the amount and depth of the groove and the distance between the groove and the boundary of ZnO piezoelectric thin-film (DGB) on the reduction of insertion-loss and the enhancement of quality factor (Q) and electromechanical coupling coefficient (K2) were investigated. Three critical technology modules established in this thesis are including the development of (1) a sputtering deposition process of high C-axis (002) orientation ZnO piezoelectric thin-film, (2) an electrochemical etch-stop technique of silicon anisotropic etching and (3) an integration process of FPW device. Firstly, under the optimized conditions of the sputtering deposition process (300¢J substrate temperature, 200 W radio-frequency (RF) power and 30/70 Ar/O2 gas flow ratio), a high C-axis (002) orientated ZnO piezoelectric thin-film with a high X-ray diffraction (XRD) intensity (50,799 a.u.) and narrow full width at half maximum (FWHM = 0.383¢X) can be demonstrated. The peak of XRD intensity of the standard ZnO film occurs at diffraction angle 2£c = 34.422¢X, which matches well with our results (2£c = 34.357¢X). Secondary, an electrochemical etch-stop system with three electrode configuration has been established in this research and the etching accuracy can be controlled to less than 1%. Thirdly, this thesis has successfully integrated the main fabrication processes for developing the FPW device which are including six thin-film deposition processes and six photolithography processes. The implemented FPW device with RIE etched groove reflection microstructure presents a low insertion-loss of -12.646 dB, center frequency of 114.7 MHz, Q factor of 12.76 and K2 value of 0.1876%.

The roles of hydrogen induced defects in pure ZnO has been studied extensively. However, in a transition metal, such as Co, doped ZnO thin films the effect of hydrogen in electric conduction and magnetic coupling is still unclear and needs further study. Recently model predicts that hydrogen can be a shallow donor as well as an agent to induce ferromagnetism coupling between two adjacent Co ions which substitute the Zn sites at room temperature in a ZnO sample with a high Co doping ratio. However, the experimental supports is rare. In this study, Co-doped(5%) ZnO films are grown by a RF-magnetron sputtering system on glass substrate at room temperature. The growth condition is fixed for RF power in 200W, working press of 70 mtorr and various mixing ratio of H2/Ar+H2 gas. The crystal structure, electric and optical properties and the influence of vacuum annealing on the samples are studied. In this research, we found that the doping of hydrogen in Co-doped ZnO thin films truly increases the electric conductivity which is proportional to the H2/(Ar+H2) ratio. When the ratio of hydrogen is low, the (002) peak taken by a Glazing Angle X-ray Diffractometer dominates, while increasing hydrogen ratio other diffraction peaks appear, indicating an enhancement of crystal structure in all directions, and grain sizes and unit cell volume decrease. From the optical transmittance measurement, it is found that the color of films turned into metallic like and the optical band gap increases linearly with H2 ratio which can be attributed to the Burstein-Moss effect that corresponds to the increasing of carriers in the conduction band by doping of H2. The transmittance data provides the information of the ratio of crystalline and amorphous, which can also be correlated to the AFM results. When the H2 ratio is higher than 30%, more crystals and larger sizes of grains were formed in the films, such that carriers did not need to pass grain boundaries so frequently and experienced less scattering that was actually improve the electric conductivity. The electric conductivity can be even improved by post annealing in H2 environment. Moreover, the Magnetic circular dichroism (MCD) measurement shows that the Co2+ ions does truly substitute on Zn sited in Td symmetry during thin film deposition. The resistance measurement as a function of temperature found the hydrogenated Co-doped thin films are semiconductor conductive. More works are needed to determine the magnetization, identify second phases and Vo by SQUID and X-ray photoelectron spectroscopy.

This thesis contains four parts. In the first part, we investigate the post treatment of low-temperature-deposited high dielectric constant (high-k) thin films to enhance their properties. The high-pressure oxygen (O2 and O2+UV light) is employed to improve the properties of low-temperature-deposited metal oxide dielectric films and interfacial layer. In this study, 13nm HfO2 thin films are deposited by sputtering method at room temperature. Then, the oxygen treatments with a high-pressure of 1500 psi at 150 ¢J are performed to replace the conventional high temperature annealing. According to the XPS analyses, integration area of the absorption peaks of O-Hf and O-Hf-Si bonding energies apparently raise and the quantity of oxygen in deposited thin films also increases from XPS measurement. In addition, the leakage current density of standard HfO2 film after O2 and O2+UV light treatments can be improved from 3.12¡Ñ10-6 A/cm2 to 6.27¡Ñ10-7 and 1.3¡Ñ10-8 A/cm2 at |Vg| = 3 V. The leakage current density is significantly suppressed and the current transport mechanism is transformed from trap-assisted tunneling to Schottky-Richardson emission due to the passivation of traps inside HfO2 film and interfacial layer. The proposed treatment is applicable for the future flexible electronics. In the second part of this thesis, we study the memory characteristics of CoSi2 nanocrystals with SiO2 or Al2O3/HfO2 multiple layer tunnel oxide. Due to the property of high-k, it can provide thicker physics thickness than thermal oxide (SiO2) under identical equivalent oxide thickness (EOT) and enhances the reliability without reducing the programming speed. By engineering the different dielectric constant materials and the energy band structure, the performance of nonvolatile memory can be improved. The device that employs HfO2/Al2O3/HfO2 as tunnel oxide exhibits better memory window and carrier injection efficiency than the device employing thermal oxide. Furthermore, the device employs Al2O3/HfO2/Al2O3 as tunnel oxide present the better retention characteristics than the device employs HfO2/Al2O3/HfO2 as tunnel oxide. The corresponding mechanisms were also discussed. For the advanced nonvolatile application, high-k material - hafnium oxide was applied on the resistance switching nonvolatile memory device as resistive switching layer with TiN/Ti/HfO2/TiN structure in the third part of this thesis. By using a thin Ti layer as the reactive buffer layer into the anode side, the proposed device exhibits superior bistable characteristics. Since the Ti can easily absorb oxygen atoms from buried HfO2, the TiN/Ti bi-layer can greatly improve the resistive switching characteristics. The mechanism of the proposed device is dominated by the redox reaction between the Hf and HfOX. In addition, the proposed device has multi-bit storage ability to enhance the storage density. From the temperature-dependent measurements, the low ambient temperatures would cause the formation and rupture of the conduction path with discordant quality and quantity during every switching cycle, which give rise to a wide distribution of the HRS and LRS resistance and instability of resistive switching properties. In the fourth part of this thesis, we investigate the characteristics of an advanced Cu-induced resistance switching non-volatile memory with Pt/Cu/SiON/TiN/SiO2/Si structure. By inserting a Cu ultra thin film between the SiON layer and Pt top electrode, the device exhibits bipolar resistive switching characteristics after a forming process at 13.6 V. However, the forming and resistive switching process can not be observed in the device if the Cu thin film is omitted. Additionally, we employ a two-step forming process to reduce the forming voltage to 7.5 V. During the forming process, the bias-induced Cu could form a filament-like stretched electrode, but the ¡§set¡¨ and ¡§forming¡¨ voltage of the proposed device take place on different polarity. Therefore, we suppose a bipolar switching mechanism, and our device is dominated by the formation and rupture of the oxygen vacancies in a conduction path between the Cu filament and TiN button electrode. The device also demonstrates stable resistance states during 105 cycling bias pulse operations and acceptable retention characteristics after an endurance test at 85¢J. The I-V switching curves are analyzed to realize the carrier transport mechanisms in different bias regions and resistance states. Additionally, the effective thickness of the resistance switching layers (deff) for the samples with different SiON thickness is also extracted from the related mechanism and demonstrated that the deff is independent with the initial SiON thickness. The corresponding mechanisms and the deff verify the bipolar switching is dominated by the formation and rupture of the oxygen vacancies in conduction path between Cu filament and TiN bottom electrode.

Mechanical Rubbing still is an useful alignment method in this time. In this study, we investigated the surface wettability of rubbed polyimide(PI) thin film. By using contact angle measurements, we found the surface free energy have strong connection with surface roughness in different rubbing times. We also discussed the wettability of rubbed PI thin film in parallel and anti-parallel of rubbing direction. We found that if we rubbed PI thin film 3 times in 0.3mm depth then the structure of SSFLC is more uniform than the alignment effect of other rubbing times and we found that the values of polar energy in parallel and anti-parallel of rubbing direction are very close. In the other part of study, we degenerated the polyimide before coating. We found that the reflection anisotropic spectrum(RAS) have a blueshift and the rubbing strength will be more influential in the wettability of PI thin film than the film with no degenerate process.

The study focus on low temperature process with doping antimony to refine the quality of the CI(G)S thin film, and doping gallium to increase energy band gap in two-stage co-evaporation process. Furthermore, we discuss about the variety of crystal structure, and recognize the value of energy band gap in transmission spectra. It has been achieved to increase the energy band gap of material with doping gallium. Recognizing the shift of XRD pattern and research result from papers, I estimate the content ratio of gallium in ¢»A atoms is 0.28~0.29, near my establishment ratio 0.3. By tuning the molecular beam flux of antimony effusion cell from 1.1¡Ñ1013 atoms/cm2second to 2.2¡Ñ1014 atoms/cm2second , to find out the property content of antimony involving of co-evaporation to optimize the quality of the CI(G)S polycrystalline thin film. We just observed that the thin film with antimony involving make effect of smoother and denser surface morphology. In our study, we also try discontinue supplying the antimony vapor to reduce the amount of antimony which involves the reaction process, and make low content of antimony leaved in the CI(G)S thin film. Here, We found out a special effect of the grain- growth of the CI(G)S thin film supplying antimony continually or not in the process. It should be strong (112) prefer orientation when we deposit the thin film using SLG substrate. However, we found out that antimony enhance the (220/204) .

The mechanical properties of biomedical materials were determined and discussed in this study. The extension and tensile tests for aorta and coronary artery were carried out using tensile testing machine. Based on incompressibility of biological soft tissue, the stress-stretch curves of arteries were obtained. This study proposed a nonlinear Ogden material model for the numerical simulation of coronary artery extension during stent implantation. The corresponding Ogden model parameters were derived by the obtained stress-stretch curves from tensile tests. For validation, the proposed nonlinear Ogden material model for coronary artery was applied to a Palmaz type stent implantation process. The simulated stent deformation was found to be reasonable. It had a good correlation with the measured results. The microindentation experiments were used to measure the mechanical properties of enamel and dentine of human teeth in this study. To reveal the relation between the experimental parameters and measured mechanical properties, Young¡¦s moduli were investigated by varying experimental parameters. The parameter of maximum indentation load significantly influences measured values. Young¡¦s modulus varies very slightly when 10 to 100 mN of maximum indentation load applied. Young¡¦s modulus is not sensitive to the parameters of portion of unloading data and teeth age. The combination of finite element analysis and curve-fitting method is proposed to determine the mechanical properties of thin film deposited on substrate. The mechanical properties of thin film, i.e. Young¡¦s modulus, yield strength and strain-hardening exponent, were extracted by applying an iterative curve-fitting scheme to the experimental and simulated force-indentation depth curves during the microindentation loading and unloading processes. The variation of mechanical properties of TiN thin films with thicknesses ranging from 0.2 to 1.4 £gm was extracted. The results presented the film thickness effect makes the Young¡¦s modulus of TiN thin films reduces with reducing film thickness, particularly at thicknesses less than 0.8 £gm. Therefore, it can be inferred that a film thickness of 0.8 £gm possibly represents the upper bound when employing macroscopic mechanics with bulk material properties.

This dissertation focuses on three separate studies. First, magnetization of the Mn12- acetate was studied by low temperature hysteresis loops and DC magnetization data on magnetically aligned Mn12-acetate micro-crystals. Secondly, Mn12-acetate thin films were fabricated and characterized by AFM and STM. Finally, magnetization of the film material was also studied. Enhanced alignment of Mn12-acetate micro-crystals as compared to prior studies was verified by observation of several sharp steps in low temperature hysteresis loops. It was found that ~ 0.5 T is sufficient to orient the micro-crystals in an organic solvent to a degree comparable to a single crystal. The degree of the alignment was controlled by varying the magnetic field at room temperature and during the cooling process. Subsequently, low temperature hysteresis loops and DC magnetizations were measured for each prepared orientation state of a sample. The high temperature magnetic anisotropy responsible for the alignment could not be measured, possibly due to its small magnitude. Mn12-acetate was deposited onto Si/SiO2 by a solution evaporation method. Atomic force microscopy studies revealed that 2 nm thick films of molecular level smoothness were formed. Mn12-acetate was also deposited onto a Highly Ordered Pyrolytic Graphite (HOPG) surface for scanning tunneling microscopy (STM) studies. A self-assembled triangular lattice was observed in the Mn12-acetate thin films by STM at room temperature under ambient conditions. These STM images show typical center to center intermolecular separations of about 6.3 nm and height corrugation of less than 0.5 nm. Magnetization measurements were not successful in Mn12-acetate thin films due to the small amount of material in the film and the large background signal from the substrate. Therefore, a sample for the magnetization measurements, called “film material”, was made by evaporating a dilute solution of Mn12-acetate powder in acetonitrile. Significant changes in magnetic properties of the film material were observed from magnetization measurements. The blocking temperature of the film material was found to increase to TB > 10 K at low magnetic fields.

Oxide thin films and bimetallic model catalysts have been studied using metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), low energy ion scattering spectroscopy (LEISS), X – ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), infrared reflection absorption spectroscopy (IRAS) and temperature programmed desorption (TPD) under ultra high vacuum (UHV) conditions. Of particular interest in this investigation was the characterization of the surface morphology and electronic/geometric structure of the following catalysts: SiO2/Mo(112), Ag/SiO2/Mo(112), Au–Pd/Mo(110), Au–Pd/SiO2/Mo(110), and Pd– Sn/Rh(100). Specifically, different types of oxide surface defects were directly identified by MIES. The interaction of metal clusters (Ag) with defects was examined by work function measurements. On various Pd related bimetallic alloy surfaces, CO chemisorption behavior was addressed by IRAS and TPD. Observed changes in the surface chemical properties during the CO adsorption-desorption processes were explained in terms of ensemble and ligand effects. The prospects of translating this molecular-level information into fundamental understanding of ‘real world’ catalysts are discussed.

Solubility-based membrane separation, in which the more soluble species preferentially permeates across the membrane, has attracted considerable recent attention due to both economic and environmental concerns. This solubility-selective mode is particularly attractive over a diffusivity-selective mode in applications in which the heavier species are present in dilute concentrations. Examples include the recovery of volatile organic components (VOCs) from effluent streams and the removal of higher hydrocarbons from natural gas. Recently, nanocomposites have shown great promise as possible membrane materials for solubility-selective separations. The chemical derivatization of inorganic mesoporous substrates has been explored to synthesize organic-inorganic nanocomposite membranes. The most exciting feature of this approach is that it enables the rational engineering of membrane nano-architecture with independent control over the free volume and chemistry to create membranes with highly customizable permselectivity properties. In this study, we synthesized the organic-inorganic nanocomposite membranes by decorating the surfaces of commercially available mesoporous alumina substrates, and surfactant-templated highly ordered mesoporous silicate thin films placed on commercially available macroporous inorganic substrates, with a selective organic material that is physically or chemically anchored to the porous surfaces. Hyperbranched melamine-based dendrimers, with nanometer dimension and chemical composition designed to target certain components, were used as filling agents. We evaluated these membranes for several environmentally relevant separations, such as the recovery of the higher hydrocarbon from air and the removal of trace VOCs from air or water, while exploring the impact of organic oligomer size, chemistry, and surface coverage, as well as substrate pore size and structure, on membrane performance. First, we did a model study to verify the feasibility of dendrimer growth inside mesopores by using ordered mesoporous silica. Alumina-ordered mesoporous silica (alumina-OMS) hybrid membranes were prepared as new inorganic porous substrates. Finally, we synthesized dendrimer-ceramic nanocomposite membranes by growing several generations of melamine-based dendrimers with diverse functional groups directly off the commercial alumina membranes. Composite membranes show very high propane/nitrogen selectivity up to 70.