This research investigates an extension of the glancing angle deposition (GLAD) technique and a biosensing application of films produced by GLAD. The extension to GLAD, called phi-sweep (PS), improves column isolation compared to films grown by traditional GLAD (TG) as well as modifies the column tilt angle, , of the slanted columns according to tan(_{PS}) = tan(_{TG}) cos(), where is the sweep angle. The biosensing application makes use of localized surface plasmon resonance in noble metal GLAD films functionalized with rabbit immunoglobulin G (rIgG) to detect binding of anti-rabbit immunoglobulin G (anti-rIgG) to the films' surface. The extinction peak red-shifts a distance dependent on the concentration of anti-rIgG solution in a manner described by the Langmuir isotherm with a saturation value, _{max}, of 29.4 0.7 nm and a surface confined thermodynamic binding constant, K, of (2.7 0.3)10 M. / Microsystems and Nanodevices

This dissertation presents the design of organic/inorganic hybrid 2D and 3D nanostructured arrays via controlled assembly of nanoscale building blocks. Two representative nanoscale building blocks such as carbon nanotubes (one-dimension) and metal nanoparticles (zero-dimension) are the core materials for the study of solution-based assembly of nanostructured arrays. The electrical, mechanical, and optical properties of the assembled nanostructure arrays have been investigated for future device applications. We successfully demonstrated the prospective use of assembled nanostructure arrays for electronic and sensing applications by designing flexible carbon nanotube nanomembranes as mechanical sensors, highly-oriented carbon nanotubes arrays for thin-film transistors, and gold nanoparticle arrays for SERS chemical sensors. In first section, we fabricated highly ordered carbon nanotube (CNT) arrays by tilted drop-casting or dip-coating of CNT solution on silicon substrates functionalized with micropatterned self-assembled monolayers. We further exploited the electronic performance of thin-film transistors based on highly-oriented, densely packed CNT micropatterns and showed that the carrier mobility is largely improved compared to randomly oriented CNTs. The prospective use of Raman-active CNTs for potential mechanical sensors has been investigated by studying the mechano-optical properties of flexible carbon nanotube nanomembranes, which contain freely-suspended carbon nanotube array encapsulated into ultrathin (<50 nm) layer-by-layer (LbL) polymer multilayers. In second section, we fabricated 3D nano-canal arrays of porous alumina membranes decorated with gold nanoparticles for prospective SERS sensors. We showed extraordinary SERS enhancement and suggested that the high performance is associated with the combined effects of Raman-active hot spots of nanoparticle aggregates and the optical waveguide properties of nano-canals. We demonstrated the ability of this SERS substrate for trace level sensing of nitroaromatic explosives by detecting down to 100 zeptogram (~330 molecules) of DNT.

A reflection retarder is a device that induces a change in the phase between the parallel and perpendicular components, of the electric field, to the plane of incidence while maintaining the relative amplitudes. A film-substrate reflection retarder is a reflection retarder that only consists of a film-substrate system. Film-substrate reflection retarders have been previously studied in the negative, zero, and positive systems. The type of system is determined by the relationship between the refractive index of the ambient N0, film N1, and substrate N2: if N1<(N0*N2)^(1/2) , the system is negative; if N1=(N0*N2)^(1/2), the system is zero; if N1>(N0*N2)^(1/2), the system is positive. It has been determined that is the condition required to achieve reflection retarders, in general. Angle-of-incidence tunable (AIT) retarder designs have not been investigated for the zero system, but have been studied in the negative system. An exact retarder in the zero system only exists at a single angle of incidence and a corresponding single film thickness. By approximating the retarder condition to allow the relative amplitudes to be within 5% of the exact value of unity, it is possible to realize unique AIT retarders in the zero system: retarders that can be operated over a continuous range of angles of incidence resulting in a large range of phase shifts approaching 360°. It is possible to have multiple angles of incidence with a difference of between their respective phase shifts. By inducing a phase shift of, it is possible to modulate the polarization of light. By employing an approximation of the retarder condition, AIT retarder designs were developed. The design’s tolerance to changes in design parameters is analyzed and discussed.

In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot &ndash / wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that&nbsp / hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.<br /> <br /> We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced. <br /> <br /> This work explores the optical, structural and electronic properties of this promising material whose study &ndash / samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.

Thin film technology is of great significance for a variety of products, such as electronics, anti-reflective or hard coatings, sensors, solar cells, etc. This thesis concerns the synthesis of thin functional films, reactive magnetron sputter deposition process as such and the physical and functional characterization of the thin films synthesized. Characteristic for reactive sputtering processes is the hysteresis due to the target poisoning. One particular finding in this work is the elimination of the hysteresis by means of a mixed nitrogen/oxygen processing environment for dual sputtering of Alumina-Zirconia thin films. For a constant moderate flow of nitrogen, the hysteresis could be eliminated without significant incorporation of nitrogen in the films. It is concluded that optimum processing conditions for films of a desired composition can readily be estimated by modeling. The work on reactively sputtered SiO2–TiO2 thin films provides guidelines as to the choice of process parameters in view of the application in mind, by demonstrating that it is possible to tune the refractive index by using single composite Six/TiO2 targets with the right composition and operating in a suitable oxygen flow range. The influence of the target composition on the sputter yield is studied for reactively sputtered titanium oxide films. It is shown that by using sub-stoichiometric targets with the right composition and operating in the proper oxygen flow range, it is possible to increase the sputter rate and still obtain stoichiometric coatings. Wurtzite aluminum nitride (w-AlN) thin films are of great interest for electro-acoustic applications and their properties have in recent years been extensively studied. One way to tailor material properties is to vary the composition by adding other elements. Within this thesis (Al,B)N films of the wurtzite structure and a strong c-axis texture have been grown by reactive sputter deposition. Nanoindentation experiments show that the films have nanoindentation hardness in excess of 30 GPa, which is as hard as commercially available hard coatings such as TiN. Electrical properties of w-(Al,B)N thin films were investigated. W-(Al,B)N thin films are found to have a dielectric strength of ~3×106 V/cm, a relatively high k-value around 12 and conduction mechanisms similar to those of AlN. These results serve as basis for further research and applications of w-(Al,B)N thin films. An AlN thin film bulk acoustic resonator (FBAR) and a solidly mounted resonator (SMR) together with a microfluidic transport system have been fabricated. The fabrication process is IC compatible and uses reactive sputtering to deposit piezoelectric AlN thin films with a non-zero mean inclination of the c-axis, which allows in-liquid operation through the excitation of the shear mode. The results on IC-compatibility, Q-values, operation frequency and resolution illustrate the potential of this technology for highly sensitive low-cost micro-biosensor systems for applications in, e.g. point-of-care testing.

Thesis (MEng)--University of South Australia, 1997

Melanins are a class of bio-macromolecules that are found throughout the biosphere. They fulfill various functions in human beings, which makes them a long studied substance in medicine and biology. Furthermore they possess a set of rare and special physico-chemical properties which include featureless broad band absorption in the UV-Vis spectrum and condensed phase electrical conduction. Many scientists have interpreted their findings in terms of an amorphous semiconductor model, but this was done under the a priori assumption that charge transport in melanin is electronic. However, a very strong dependence of melanin’s electrical properties on its level of hydration has recently led to speculations that the dominant charge carrier for high hydration is of protonic rather than electronic nature. This thesis will present direct evidence for electronic charge transport, found by investigating the influence of different environmental parameters on the conductivity of melanin. It will furthermore be shown that the hydration dependent conductivity of melanin can be understood in terms of a dielectric response model for an amorphous semiconductor. This establishment of the major charge carrier is an important step in the on-going effort to fully map the structure-property relationship of melanin and will help to understand its function in vivo. With the ultimate goal to make use of melanin’s fascinating properties, thin films, a new class of device has been characterized and investigated. These thin films, while exhibiting melanin’s characteristics, show improved mechanical stability, a very uniform morphology and a much faster response than standard pellet samples. They are furthermore applicable to standard polymer processing techniques which brings technological applications within reach.

Photovoltaics (PV) is fast emerging as an attractive renewable energy technology due to concerns of global warming, pollution and scarcity of fossil fuel supplies. However to compete in the global energy market, solar cells need to be cheaper and more energy efficient. Silicon is the favorite semiconductor used in solar photovoltaic cells because of its ubiquity and established technology, but due to its indirect bandgap silicon is a poor absorber and light emitter. Thin film cells play an important role in low cost photovoltaics, but at the cost of reduced efficiencies when compared to wafer based cells. There remains much untapped potential in thin-film solar cells which this work has attempted to exploit through exploring novel approaches of enhancing the efficiency of thin film cells using the optical properties of sub-wavelength metal nanoparticles. Metals are considered as strong absorbers of light because of their large free-electron density. How can metals improve light trapping in solar cells? This question has raised several eyebrows and this thesis is an attempt to show that metal nanoparticles can be useful in producing efficient solar cells. Subwavelength metal particles support surface modes called surface plasmons when light is incident on them, which cause the particles to strongly scatter light into the underlying waveguide or substrate, enhancing absorption. The process of coupling thin film silicon waveguide modes to plasmonic metals using unpolarised light at normal incidence is applied to silicon-based solar cells and light emitting diodes, and enhanced photocurrent and electroluminescence is realized with potential for further optimisation and improvement. The results from this study correspond to a current increase of up to 19% from planar wafer based cells and up to 33% increase from 1.25 micron thin-film silicon-on-insulator structures for the AM1.5 global spectrum. We also report for the first time an up to twelve fold increase in electroluminescence signal from 95nm thick light-emitting diodes. From the results we conclude that this method which involves simple techniques of nanoparticle deposition and characterization could hold important implications in the improvement of thin-film silicon cell absorption / emission efficiencies where conventional methods of light trapping are not feasible, resulting in promising near-term applications of surface plasmons in photovoltaics and optoelectronics.

In polycrystalline silicon (pc-Si) thin-film solar cells, defect passivation is critical to device performance. Isoelectronic or covalently bonded impurities, hydrogenic, extended defects and defects with localized levels in the bandgap (deep level defects) are typically introduced during the fabrication of, and/or are inherent to, pc-Si thin-film solar cells. These defects dramatically affect minority carrier lifetimes. Removing and/or passivating these defects is required to maximize minority carrier lifetimes and is typically done through thermal annealing and passivation techniques. For pc-Si thin-film solar cells on low temperature glass superstrates, rapid thermal annealing (RTA) and hydrogen plasma passivation (hydrogenation) are powerful techniques to achieve effective removal and passivation of these defects. In this thesis, three silicon thin-film solar cells structures on low-temperature glass are subjected to variations in RTA high-temperature plateaus, RTA plateau times, and hydrogen plasma passivation parameters. These solar cells are referred to as ALICIA, EVA and PLASMA. By varying the RTA plateau temperature and time at plateau, the trade-off between extensive dopant diffusion and maximum defect removal is optimized. To reduce the density of point defects and to electrically activate the majority of dopants, an RTA process is shown to be essential. For all three of the thin-film solar cell structures investigated in this thesis, a shorter, higher-temperature RTA process provides the best open-circuit voltage (Voc). Extensive RTA plateau times cause excessive dopant smearing, increasing n = 2 recombination and shunt resistance losses. Hydrogenation is shown to be an essential step to achieve maximum device performance by `healing' the defects inherent to pc-Si thin-film solar cells. If the hydrogen concentration is about 1-2 times the density of oxygen in the cells as measured by secondary ion mass spectroscopy (SIMS), the cells seem to respond best to hydrogenation, with good resultant Voc and short-circuit for all cells investigated in this thesis. The effect of hydrogen passivation on the Voc is spectacular, typically increasing it by a factor of 2 to 3.5. Hydrogen de-bonding from repeated thermal treatments at increasing temperature provides a deeper understanding of what defects exist and the nature of the defects that limit the cell voltage. The variation in RTA and hydrogenation process parameters produces significant empirical insight into the effectiveness of RTA processes for point defect removal, dopant activation, point defect and grain boundary passivation, and impurity passivation. SIMS measurements are used to determine the impurities present in the cells' bulk and the amount of hydrogen available to passivate defects. From the results presented it appears that pc-Si thin-film solar cells on low-temperature glass are a promising, and potentially lower-cost, alternative to Si wafer based cells.

Thin-film solar cells are widely recognised to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam evaporation technology. We believe our solar cells have the potential of significantly lowering the manufacturing cost compared to conventional, PECVD-fabricated thin-film solar cells. After years of materials research, the focus of the Group??s work is now moving to the metallisation of evaporated solar cells. Minimising various kinds of losses is the main challenge of the cell metallisation procedure, within which the contact resistance is always a big issue. In this thesis, the contact resistance of aluminium contacts on poly-Si thin-film solar cells on glass is investigated. To the best of the author??s knowledge, this is the first ever contact resistance investigation of Al contacts on evaporated poly-Si material for photovoltaic applications. Various transmission line models (TLM) are employed to measure the contact resistance. An improved TLM model is developed to increase the measurement precision and, simultaneously, to simplify the TLM pattern fabrication process. In order to accommodate the particular requirements of poly-Si coated glass substrates, a TLM pattern fabrication process using photolithography is established. Furthermore, a Kelvin sense tester is set up to ensure an accurate measurement of the contact resistance. After establishment of the TLM technique at UNSW, it is successfully tested on singlecrystalline silicon wafer samples. The thermal annealing process of the contacts is also optimised. Then, the general behaviour of Al contacts on uniformly doped poly-Si films (i.e., no p-n junction) is investigated using the verified TLM technique. The long-term stability of the contacts is also studied. This is followed by an investigation of the contact resistance of the back surface field and emitter layers of different types of poly-Si thin-film solar cells. Finally, a novel contact resistance measurement model is proposed that is believed to be able to overcome the measurement bottleneck of the transmission line models.