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Title: Preparation of Nanocomposites TiOx/Plasma Polymer and Study of Their Properties Author: Mgr. Martin Drábik Department: Department of Macromolecular Physics Supervisor: Prof. RNDr. Hynek Biederman, DrSc. Supervisor's e-mail address: bieder@kmf.troja.mff.cuni.cz Abstract: This thesis concerns a study of nanocomposite films TiOx/plasma polymer prepared by various deposition techniques using different organic precursors. Processes of deposition of the films were diagnosed in-situ by means of OES and measuring the deposition rate by QCM. Properties of the nanocomposite films were studied by various characterization techniques. Wettability of the films was described by means of the contact angle of water. Morphology of the nanocomposites was characterized by AFM, TEM and SEM. Elemental analysis and chemical composition of the films were studied by XPS, RBS, SIMS and FTIR. Crystal structure of TiO2 films was identified by XRD. Optical characterization of the prepared films was done by UV-Vis spectroscopy. Electrical properties of the samples were characterized by I-V and SPV measurements. In the end, 'wet' chemical processes were utilized for preparation of both TiO2 nanostructures and organic films for comparison with vacuum deposition techniques and plasma polymer composite films. Keywords: nanocomposite...

The development of ultraviolet semiconductor emitters (LEDs and lasers) will enable a large number of industrial and medical applications. AlGaN alloys are ideally suited for the development of such devices since their energy gap can be tuned from the near UV (365 nm) to deep UV (200 nm). However, the doping of such materials n- and p-type is difficult. Another problem is the generally poor light extraction efficiency from both UV and visible LEDs. This research addressed the first problem by developing UV emitters in the form of graded-index-separate-confinement-heterostructure (GRINSCH). In these device the active region is embedded in two compositionally graded wave guiding layers. Due to the polar nature of nitride semiconductors these compositionally graded AlGaN films are doped p- or n-type if the grading changes from high to low concentration or from low to high concentration respectively. Thus, a p-n junction is automatically formed without the incorporation of dopants. The polarization induced doping level in these structures was calculated to be 1018cm-3 for the p- and n-sides. A number of devices, whose active region is either 75 nm Al0.72Ga0.28N bulk film or multiple QWs have been grown on 6H-SiC substrates by Molecular-Beam Epitaxy (MBE) and investigated. The emission properties of these structures were investigated by cathodoluminescence (CL) and by measuring their optical gain. A maximum net modal gain in excess of 80 cm-1 was measured with an optical gain threshold of 14 µJ / cm2. Some of these structures, emitting in the near UV, were also electrically pumped. The second problem was addressed by incorporating dielectric (TiO2) photonic crystals on the phosphor plates of white LEDs in order to increase the light extraction efficiency upon illumination with blue LEDs. The two-dimensional (2D) hexagonal-lattice of TiO2 photonic crystal was formed by e-beam lithography on low-scattering (Y1-xCex)3Al5O12 (YAG:Ce) ceramic phosphor plates. Yellow light extraction enhancement by a factor of 4.4 was achieved with a 2D photonic crystal nano-cylinders having diameter 430 nm, lattice constant of 580 nm and height of 350 nm. Simulations using a three-dimensional finite difference time domain are consistent with our measured data.

abstract: This thesis discusses the evolution of conduction mechanism in the silver (Ag) on zinc oxide (ZnO) thin film system with respect to the Ag morphology. As a plausible substitute for indium tin oxide (ITO), TCO/Metal/TCO (TMT) structure has received a lot of attentions as a prospective ITO substitute due to its low resistivity and desirable transmittance. However, the detailed conduction mechanism is not fully understood. In an attempt to investigate the conduction mechanism of the ZnO/Ag/ZnO thin film system with respect to the Ag microstructure, the top ZnO layer is removed, which offers a better view of Ag morphology by using scanning electron microscopy (SEM). With 2 nm thick Ag layer, it is seen that the Ag forms discrete islands with small islands size (r), but large separation (s); also the effective resistivity of the system is extremely high. This regime is designated as dielectric zone. In this regime, thermionic emission and activated tunneling conduction mechanisms are considered. Based on simulations, when "s" was beyond 6 nm, thermionic emission dominates; with "s" less than 6 nm, activated tunneling is the dominating mechanism. As the Ag thickness increases, the individual islands coalesce and Ag clusters are formed. At certain Ag thickness, there are one or several Ag clusters that percolate the ZnO film, and the effective resistivity of the system exhibits a tremendous drop simultaneously, because the conducting electrons do not need to overcome huge ZnO barrier to transport. This is recognized as percolation zone. As the Ag thickness grows, Ag film becomes more continuous and there are no individual islands left on the surface. The effective resistivity decreases and is comparable to the characteristics of metallic materials, so this regime is categorized as metallic zone. The simulation of the Ag thin film resistivity is performed in terms of Ag thickness, and the experimental data fits the simulation well, which supports the proposed models. Hall measurement and four point probe measurement are carried out to characterize the electrical properties of the thin film system. / Dissertation/Thesis / M.S. Materials Science and Engineering 2012

Cu(In,Ga)(Se,S)2 (CIGS) solar cells have attracted a lot of attention due to their high performance and the prospect for lower manufacturing costs over conventional crystalline silicon solar cells. All recent record efficiency CIGS absorbers have been deposited using vacuum processing which introduces high manufacturing costs. CIGS can also be compatible with low cost, atmospheric processing which can significantly reduce manufacturing costs. Recently, there has been some progress in developing atmospheric solution-based processes for CIGS. Among different solution approaches, deposition of molecular precursors can be advantageous in terms of simplicity and straightforward compositional control. Nonetheless, the developed methodologies involve highly toxic reagents or large impurity content in the device, limiting the potential for commercialisation. This thesis describes the development of a novel solution-based approach for the deposition of CIGS absorber layers. Metal chalcogenides are used as the starting precursors, which are free from detrimental impurities. These compounds contain strong covalent bonds and, consequently, they are insoluble in common solvents. Until recently, hydrazine, which is highly toxic and explosive, was the only solvent to effectively dissolve these types of precursors, limiting the feasibility of this approach for industrial applications. In this work, metal chalcogenides are dissolved in a safer solvent combination of 1,2-ethanedithiol and 1,2-ethylenediamine, completely eliminating hydrazine from the process. By using this solvent system, optically transparent solutions are formed which exhibit long-term stability. The precursor solutions are decomposed cleanly and they are converted to single phase CIGS upon selenisation. CuIn(S,Se)2 solar cells with power conversion efficiencies up to 8.0% were successfully fabricated by spray depositing the precursor solution, followed by a selenisation step. This progress has been made by continuously optimising the deposition, drying, and especially the selenisation configuration. Among other parameters, the working pressure during selenisation was found to have a dramatic effect on the material crystalline quality. Rapid thermal processing was also explored as an alternative selenisation configuration to tube furnace annealing and it was shown to improve the back contact/absorber interface. It has been demonstrated that Ga can easily be incorporated in the absorber for band-gap tuning and, consequently, for VOC enhancement of the solar cells. The structural properties of the films were investigated with Ga content, as well as the opto-electronic characteristics of the corresponding solar cells. The band-gap of the material was conveniently varied by simply adjusting the precursor ratio, allowing for fine compositional control. By using this technique, Cu(In,Ga)(Se,S)2 solar cells with conversion efficiencies of up to 9.8% were obtained. The solar cell performance in this work is limited by the porosity of the absorber and the back contact quality. Despite a significant improvement during the course of this work, the remaining porosity of the absorber causes selenium to diffuse towards the back forming a thick MoSe2 layer and causing a high series resistance in the device. A low cost, solution-based technique was also developed for the deposition of aluminium-doped zinc oxide films that can be used as the transparent conductive oxide layer in thin film solar cells. This methodology involves the use of an ultrasonic spray pyrolysis system, which is a very versatile and easily controlled deposition technique. Although the presence of oxygen makes the film closer to stoichiometric (fewer oxygen vacancies) good electronic and optical properties have been obtained by process optimisation. Films deposited with optimum conditions exhibited a sheet resistance of 23 Ω/sq, which can be further reduced by increasing the thickness with minimal transmittance losses. The simplicity, low toxicity and straightforward control make the proposed methodologies extremely potential for low cost and scalable deposition of thin film solar cells.

Ag thin film growth on ZnO substrates has been investigated theoretically using multi-timescale simulation methods. The models are based on an atomistic approach where the interactions between atoms are treated classically using a mixture of fixed and variable charge potential energy functions. After some preliminary tests it was found that existing fixed charge potential functions were unreliable for surface growth simulations. This resulted in the development of a ReaxFF variable charge potential fitted to Ag/ZnO surface interactions. Ab initio models of simple crystal structures and surface configurations were used for potential fitting and testing. The dynamic interaction of the Ag atoms with the ZnO surface was first investigated using single point depositions, via molecular dynamics, whereby the Ag impacted various points on an irreducible symmetry zone of the ZnO surface at a range of energies. This enabled the determination of the relative numbers of atoms that could penetrate, reflect or bond to the surface as a function of incident energy. The results showed that at an energy of up to 10 eV, most atoms deposited adsorbed on top of the surface layer. The second part of the dynamic interaction involved a multi-timescale technique whereby molecular dynamics (MD) was used in the initial stages followed by an adaptive kinetic Monte Carlo (AKMC) approach to model the diffusion over the surface between impacts. An impact energy of 3 eV was chosen for this investigation. Ag was grown on various ZnO surfaces including perfect polar, O-deficient and surfaces with step edges. Initial growth suggests that Ag prefers to be spread out across a perfect surface until large clusters are forced to form. After further first layer growth, subsequent Ag atoms begin to deposit on the existing Ag clusters and are unlikely to join the first layer. Ag island formation (as mentioned within the literature) can then occur via this growth mechanism. O-deficient regions of ZnO surfaces result in unfavourable Ag adsorption sites and cause cluster formation to occur away from O-vacancies. In contrast, ZnO step edges attract deposited Ag atoms and result in the migration of surface Ag atoms to under-coordinated O atoms in the step edge. Various improvements have been made to the existing methodology in which transitions are determined. A new method for determining defects within a system, by considering the coordination number of atoms, is shown to increase the number of transitions found during single ended search methods such as the relaxation and translation (RAT) algorithm. A super-basin approach based on the mean rate method is also introduced as a method of accelerating a simulation when small energy barriers dominate. This method effectively combines states connected by small energy barriers into a single large basin and calculates the mean time to escape such basin. To accelerate growth simulations further and allow larger systems to be considered, a lattice based adaptive kinetic Monte Carlo (LatAKMC) method is developed. As off-lattice AKMC and MD results suggest Ag resides in highly symmetric adsorption sites and that low energy deposition events lead to no penetrating Ag atoms or surface deformation, the on-lattice based approach is used to grow Ag on larger perfect polar ZnO surfaces. Results from the LatAKMC approach agree with off-lattice AKMC findings and predict Ag island formation. Critical island sizes of Ag on ZnO are also approximated using a mean rate approach. Single Ag atoms are placed above an existing Ag cluster and all transition states are treated as belonging to a single large super-basin . Results indicate that small Ag clusters on the perfect ZnO surface grow in the surface plane until a critical island size of around 500 atoms is reached. Once a critical island size is reached, multiple Ag ad-atoms will deposit on the island before existing Ag atoms join the cluster layer and hence islands will grow upwards. A marked difference is seen for second layer critical island sizes; second layer Ag islands are predicted to be two orders of magnitude smaller (< 7 atoms). This analysis suggests that Ag on ZnO (0001) may exhibit Stranski-Krastanov (layer plus island) growth.

Abstract In this thesis work, crystal and phase structure, chemical composition and gas sensing properties of pulsed laser deposited vanadium oxide thin films were studied. Pulsed laser deposition was used to manufacture vanadium oxide thin films with various crystal structures, film morphologies and phase compositions. Both the well-known vanadium pentoxide V2O5, and a totally new stable phase in a solid-state thin-film form, V7O16, was produced. The existence of these phases was proven by several different characterization methods such as, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. The resistive gas sensing measurements of the films with pure V2O5 composition, and mixed phase compositions of V2O5 and V7O16, showed that behaviour of the electrical response to different gases at various measurement temperatures was dependent on the phase composition of the thin films. It was proved that in certain conditions the mixed phase films show p-type semiconducting gas sensing behaviour, instead of the pure n-type behaviour of V2O5. Both types of film compositions were shown to be highly sensitive to ammonia gas, down to 40 ppb-level. The mixed phase composition showed a higher response to ammonia compared to the pure V2O5 phase; however the pure V2O5 showed better long-term stability. Both sensing layer types also showed high selectivity to ammonia in comparison to NO and CO gases. Nanostructured pure V2O5 layers were successfully deposited on commercial microheater platforms and then used as a gas sensor. The V2O5 nanostructures were proven to be very promising candidates as gas sensor material to control the Selective Catalytic Reduction process used in the reduction of NOx gas emissions. The surface valence states of the thin film structures with various phase compositions were studied spectroscopically, and a clear connection between the valence states of the film surfaces and gas sensing properties was found. It was concluded that the pure V2O5 films also had some V4+ ions in the surface, and in the mixed phase thin films, the amount V4+ ions was already quite high, indicating a higher amount of oxygen vacancies in the thin film surface – another proof of the existence of V7O16 phase in the film composition. It is also suggested that the particular quantity of oxygen vacancies is one of the reasons for the high gas-sensing response of the thin films. / Tiivistelmä Tässä työssä tutkittiin pulssilaserkasvatettujen vanadiinioksidiohutkalvojen kide- ja faasirakenteita sekä ominaisuuksia kaasuantureina. Vanadiinioksidiohutkalvoja, jotka omaavat erilaiset kide- ja faasirakenteet, sekä erilaiset morfologiat valmistettiin pulssilaserkasvatuksella. Tunnetun V2O5 -faasin lisäksi myös V7O16 -faasi onnistuttiin valmistamaan ensimmäistä kertaa kiinteän aineen epäorgaanisena faasina ohutkalvorakenteeseen. Näiden erilaisten faasirakenteiden olemassaolo todistettiin käyttämällä useita menetelmiä kuten röntgendiffraktiota, Raman spektroskopiaa ja röntgenfotoelektronispektroskopiaa. Sekä ainoastaan V2O5 -faasia sisältäviä ohutkalvoja, että V2O5 ja V7O16 sekafaasirakenteen omaavia ohutkalvoja tutkittiin kaasuanturina, ja mittaustulokset osoittivat erilaisten kalvojen sähköisten kaasuanturivasteiden ominaisuuksien voimakkaan riippuvuuden kalvojen faasirakenteesta. Havaittiin myös, että sekafaasirakenne omaa tietyissä olosuhteissa p-tyyppisen puolijohteen sähkönjohtavuusmekanismin, toisin kuin puhdas V2O5-rakenne, joka on täysin n-tyyppinen. Molemmat ohutkalvotyypit todennettiin olevan erityisen herkkiä ammoniakki (NH3) kaasulle, jopa 40 miljardisosatasolle. Kalvo, jossa oli sekafaasirakenne, omasi korkeamman sähköisen kaasuvasteen kuin puhtaasta V2O5 faasista koostuva ohutkalvo, joka taas toisaalta omasi paremman stabiiliuden pidemmällä aikavälillä. Molemmat kaasuanturimateriaalit havaittiin selektiiviseksi NH3 -kaasulle verrattuna NO- ja CO-kaasuihin. Puhdas V2O5 nanorakenne onnistuttiin myös kasvattamaan kaupalliselle anturialustalle, ja käyttämään menestyksekkäästi herkkänä NH3- kaasuanturina. Lisäksi puhtaan V2O5 nanorakenteen todennettiin olevan erittäin lupaava kaasuanturimateriaali hyödynnettäväksi NOx-kaasupäästöjen vähentämiseen käytettävän SCR-katalyysiprosessin (Selective Catalytic Reduction) ohjauksessa. Ohutkalvotyyppien pinnan sähköistä rakennetta tutkittiin röntgenspektroskopiamenetelmillä, ja selvä yhteys materiaalien pintojen valenssitilojen ja kaasuanturiominaisuuksien välillä havaittiin. Huomattiin, että myös puhdas V2O5 ohutkalvo omaa pinnallaan pienen määrän V4+ -ioneja, ja että ohutkalvossa, jossa on sekafaasirakenne, V4+ -ionien määrä on suuri, ollen yksi todiste lisää V7O16 faasin olemassaoloon kalvon rakenteessa. Tästä johtuva happivakanssien olemassaolo on yksi syy näiden ohutkalvojen korkeaan kaasuherkkyyteen.

Visando determinar os valores ótimos para o processo de serramento de anéis bobinados de filme metalizado ultrafino de alumínio com dielétrico de poliéster a partir das condições atuais do processo de fabricação de capacitores pela empresa Epcos do Brasil, realizou-se a avaliação de diferentes tipos de serras circulares variando-se a velocidade de rotação (n) e o tempo de corte (tc). Desenvolvido projeto de experimento desses três fatores a fim de obter o resultado das interações entre eles quanto à resistência de isolamento (Riso) das peças cortadas. A serra de 160 dentes de metal-duro com revestimento de filme de carbono tipo diamante (DLC) apresentou os melhores resultados quanto à “Riso” acima de 0,378 G e quanto ao número de peças com valor abaixo deste. Constatou-se que “n” não influencia significativamente para a distribuição de “Riso”; porém, gera menos peças abaixo do especificado. Já “tc” não influencia significativamente o processo. Quanto ao tipo de dente, o perfil reto obteve melhor resultado para lâminas de serra com 80 dentes e perfil curvo para lâminas com 160 dentes. Já a espessura da lâmina não influenciou de forma expressiva o processo. A lâmina de aço-rápido apresentou adesão de alumínio na lateral do corpo da serra e, consequentemente, adesão de material na superfície de corte. As lâminas de metal-duro sem revestimento apresentaram falhas no filme metalizado por causa do atrito gerado entre a superfície de corte e a lateral da lâmina; esse inconveniente é eliminado quando ela é revestida com filme DLC apresentando melhorias quanto à “Riso” das peças para “n” menores. Também houve adesão de alumínio na parte inferior do dente devido a uma delaminação da camada de filme DLC. / In order to determine the optimal values for the sawing process of wound rings of metalized ultra-thin film with dielectric of polyester from current conditions of capacitor manufacturing process by Epcos company in Brazil, it was performed the evaluation of different types of circular saws varying the rotational speed (n) and the cutting time (tc). Developed experiment design methodology for these three factors in order to get the result of the interactions between them regarding to the insulation resistance (Riso) of cut parts. Through the analysis of the main effects, the cemented carbide saw with 160 teeth and diamond-like carbon (DLC) film coating showed the best results in terms of "Riso" above 0,378 G and regarding to the number of parts with value below the specified. It was found that "n" does not influence significantly the distribution of "Riso"; however, generates fewer parts below the specified. Now "tc" does not significantly influence the process. Regarding the tooth type, straight profile obtained better results for saw blades with 80 teeth and curved profile for blades with 160 teeth. However the thickness of the blade did not influence significantly the process. The high speed steel blade presented adhesion of aluminum on the side of the saw body and, consequently, adhesion of material on the cutting surface. The cemented carbide blades uncoated presented failures on metalized film because of the friction generated between the cutting surface and the side of the blade; this drawback is eliminated when it is coated with DLC film presenting improvements to the parts "Riso" for lower "n". There was also aluminum adhesion on the bottom of the tooth due to a delamination of the DLC film layer.

Nas últimas décadas, o interesse na eletrônica flexível tem aumentado. Sistemas que apresentam benefícios, tais como: baixo custo, melhor desempenho, transparência, confiabilidade e melhores credenciais ecológicas, estão sendo extensivamente pesquisados por vários grupos. Os transistores de filmes-finos possuem potencial para alcançarem essas características. Dispositivos baseados em óxido de zinco (ZnO) tem atraído pesquisadores devido as suas propriedades elétricas, sensoriais e ópticas. Neste trabalho, nanopartículas de ZnO foram utilizadas como semicondutor ativo e cross-linked PVP (polivinilfenol) e PECVD-SiO2 (plasma enhanced chemical vapor deposition silicon dioxide) como dielétricos de porta para integrar transistores de filmes-finos. Este processo de integração tem por objetivo os pré-requisitos de baixo custo e baixa temperatura (<200°C). Por esta razão, a utilização de técnicas de integração simples, como o spin-coating ou a técnica de sidewall-etchback, foram utilizadas. Infelizmente, existem problemas relacionados à confiabilidade em dispositivos baseados em ZnO, entre eles a degradação no tempo ou a histerese. Após uma investigação experimental da histerese na característica de transferência, um modelo qualitativo para o comportamento observado é proposto. Observou-se que a direção da histerese é afetada pela variação da temperatura quando o dielétrico polimérico é usado. Baseando-se na caracterização dos transistores, a polarização do PVP, as armadilhas na superfície das nanopartículas e na interface com o dielétrico, bem como a liberação de moléculas de oxigênio da superfície das nanopartículas foram atribuídas como as principais causas da histerese. Além disso, uma flutuação discreta da corrente é observada em testes de estresse devido à captura e liberação de portadores em determinados caminhos de corrente no transistor, semelhante a random telegraph signal (RTS), relatado em MOSFET nanométricos. Este resultado suporta o hipotético mecanismo de transporte de elétrons (caminhos de percolação) em filmes compostos por ZnO nanoparticulado. / During the last decades, the interest in flexible electronics has arisen. Systems that present benefits such as low cost, improved performance, transparency, reliability and better environmental credential are being extensively researched by several groups. Thin-film transistors (TFT) have good potential concerning these technologies. Therefore, zinc oxide (ZnO) based devices have been attracting researchers for its electrical, sensory and optical properties. In this work, ZnO nanoparticles were used to integrate thin-film transistors, in which cross-linked PVP (Poly(4-vinylphenol)) and PECVD-SiO2 (plasma enhanced chemical vapor deposition silicon dioxide) were used as gate dielectric layer. The complete integration process targets low cost and low temperature requirements (< 200°C). For this reason, simple process techniques as spin-coating or sidewall-etchback were used. Unfortunately, there are different reliability concerns in ZnO devices, among them aging or hysteresis. An experimental investigation of the hysteresis in the transfer characteristic is performed, and a qualitative model for the observed behavior is proposed. It was observed that the hysteresis direction is affected by temperature variation when the polymeric dielectric is used. The PVP bulk polarization, the traps in nanoparticles and at the polymeric dielectric interface, as well as the desorption of oxygen molecules in the surface of the nanoparticles, were attributed as the main cause of the hysteretic behavior. Moreover, capture and release of charge carriers by traps at determined current paths in the transistor lead to discrete current fluctuations in stress tests, similar to random telegraph signal (RTS) reported in nanoscale MOSFET. This result supports the hypothesis of charge transport mechanism (percolation paths) in nanoparticulate ZnO.

Submitted by Lucas Augusto Moisés (lucasaugustomoises@hotmail.com) on 2018-11-12T14:28:19Z No. of bitstreams: 1 Dissertação Lucas Augusto Moisés_2.pdf: 2728995 bytes, checksum: 4372fefa9820f84b2816df79babc8610 (MD5) / Approved for entry into archive by Adriana Aparecida Puerta null (dripuerta@rc.unesp.br) on 2018-11-13T18:12:17Z (GMT) No. of bitstreams: 1 moises_la_me_rcla.pdf: 2728995 bytes, checksum: 4372fefa9820f84b2816df79babc8610 (MD5) / Made available in DSpace on 2018-11-13T18:12:18Z (GMT). No. of bitstreams: 1 moises_la_me_rcla.pdf: 2728995 bytes, checksum: 4372fefa9820f84b2816df79babc8610 (MD5) Previous issue date: 2018-09-11 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / No presente trabalho produziram-se filmes finos transparentes de ZnO depositados pela técnica de spray-pirólise com objetivo de estudar o comportamento de suas propriedades elétricas durante a incidência de luz UV e após a incidência de luz (no escuro). Para tal, foram propostos três designs experimentais do tipo fatorial de dois níveis, um do tipo fatorial fracionário com base no modelo de Plackett-Burman e dois fatoriais completos. Na realização desses experimentos, variou-se parâmetros de produção do filme e também parâmetros experimentais no momento da realização da medida, sendo nove parâmetros no total. Através dos dados obtidos nesses experimentos, obteve-se respostas experimentais. Em cima disso foram realizadas analises estatísticas. Assim, através dessas análises se conheceu quais os fatores experimentais tiveram maior influência em cada uma dessas respostas e os resultados obtidos tiveram um bom acordo com a teoria, indicando a eficácia dos experimentos fatoriais de dois níveis realizados. Por fim, foi realizado medidas de predição e comparado as respostas obtidas nessas medidas com os dados estatísticos obtidos. Através dessa comparação, foi encontrado uma resposta reprodutível, indicando assim a possibilidade aplicação de filmes de ZnO na área de sensores / In the present work, transparent thin films of ZnO deposited by the spray - pyrolysis technique were used to study the behavior of their electrical properties during the incidence of UV light and after the incidence of light (in the dark). For that, three experimental designs of the two - level factorial type were proposed, one of the fractional factorial type based on the Plackett - Burman model and two complete factorials. In the performance of these experiments, parameters of production of the film were varied as well as experimental parameters at the moment of the measurement, being nine parameters in total. Through the data obtained in these experiments, experimental responses were obtained. Statistical analyzes were performed on top of this. Thus, through these analyzes it was known which experimental facto rs had the greatest influence on each one of these responses and the results obtained had a good agreement with the theory, indicating the effectiveness of the two - level factorial experiments performed. Finally, prediction measures were performed and the r esponses obtained in these measurements were compared with the statistical data obtained. Through this comparison, a reproducible response was found, thus indicating the possibility of applying ZnO films in the area of sensors