No description available.

No description available.

Functional crystalline oxides with perovskite structure have a wide range of electrical properties such as ferroelectric, ferromagnetic, and superconductive, as well as unique properties that make them suited for a wide variety of applications including electro-optics, high-k dielectrics, and catalysis. Therefore, in order to realize the potential of perovskite oxides it is desirable to integrate them with semiconductors. Due to the high surface energy of oxides compared to that of semiconductors and the low number of oxides that are thermodynamically stable against SiO₂ formation, it has been extremely difficult to integrate epitaxial oxides with Si directly. However, in 1998, McKee and co-workers finally succeeded in depositing SrTiO₃ on Si directly using a Sr template via molecular beam epitaxy. This breakthrough opened the possibility of integrating the perovskite oxides with Si to realize potential device applications. In this dissertation, alkaline earth metal (Sr and Ba) templates on semiconductors, which enable epitaxial growth of complex oxides on semiconductors, are investigated using molecular beam epitaxy (MBE) for growth and in-situ X-ray/ultraviolet photoemission spectroscopy (XPS/UPS) for the electronic structure analysis. An epitaxial layer of SrTiO₃ on Si using such alkaline earth templates is used as a pseudo-substrate for the integration of perovskite oxides on Si. Through the use of post-deposition annealing as a function of oxygen pressure and annealing time, the strain relaxation behavior of epitaxial SrTiO₃ films grown on Si is also investigated to determine how the SiO₂ interlayer thickness affects the SrTiO₃ lattice constant. This ability to control strain relaxation can be used as a way to manipulate the properties of other perovskite oxides grown on SrTiO₃/Si. Additionally, SrTiO₃ can be made conductive by doping with La. Conductive SrTiO₃ can be used as a thermoelectric, a transparent conductive layer, and a quantum metal layer in a quantum metal field-effect transistor (QMFET). The structural, electrical, and optical properties of strained conductive La-doped SrTiO₃ are studied in order to understand the relation between elastic strain and electrical properties for electronic device applications. Oxide quantum well systems based on LaAlO₃/SrTiO₃ are also investigated using spectroscopic ellipsometry to understand how the quantum well layer structure affects the electronic structure. Such quantum well systems are good candidates for the monolithic integration of functional perovskites on semiconductors. Oxides quantum wells can be used in various device applications such as in quantum well cascade lasers, laser diodes and high performance transistors. As part of the growth optimization for high quality complex oxide heterostructures, the surface preparation of SrTiO₃ substrates using several different methods was also extensively studied using angle-resolved photoemission spectroscopy (ARPES). We found that acid-free water-based surface preparation is actually more effective at removing SrOx̳ crystallites and leaving the surface TiO₂-terminated compared to the more commonly used acid-based methods. / text

We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58°. Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.

abstract: The realization of Silicon based photonic devices will enable much faster data transmission than is possible today using the current electronics based devices. Group IV alloys germanium tin (GeSn) and silicon germanium tin (SiGeSn) have the potential to form an direct bandgap material and thus, they are promising candidates to develop a Si compatible light source and advance the field of silicon photonics. However, the growth of the alloys is challenging as it requires low temperature growth and proper strain management in the films during growth to prevent tin segregation. In order to satisfy these criteria, various research groups have developed novel chemical vapor deposition (CVD) reactors to deposit the films. While these reactors have been highly successful in depositing high crystal quality high Sn concentration films, they are generally expensive set-ups which utilize several turbomolecular/cryogenic pumps and/or load-lock systems. An more economical process than the state-of-the art to grow group IV materials will be highly valuable. Thus, the work presented in this dissertation was focused on deposition of group IV semiconductor thin films using simplified plasma enhanced CVD (PECVD) reactors. Two different in-house assembled PECVD reactor systems, namely Reactor No. 1 and 2, were utilized to deposit Ge, GeSn and SiGeSn thin films. PECVD technique was used as plasma assistance allows for potentially depositing the films at growth temperatures lower than those of conventional CVD. Germane (GeH4) and Digermane (Ge2H6) were used as the Ge precursor while Disilane (Si2H6) and tin chloride (SnCl4) were used as the precursors for Si and Sn respectively. The growth conditions such as growth temperature, precursor flow rates, precursor partial pressures, and chamber pressure were varied in a wide range to optimize the growth conditions for the films. Polycrystalline Ge films and SiGeSn films with an Sn content upto 8% were deposited using Reactor No. 1 and 2. Development of epitaxial Ge buffers and GeSn films was accomplished using a modified Reactor No. 2 at temperatures <400oC without the aid of ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby leading to a low economic and thermal budget for the deposition process. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2020

UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035<x<0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified. VC 2016 AIP Publishing LLC.

No description available.

This dissertation undertakes theoretical and computational research to characterize and understand in detail atomic configurations and electronic structural properties of surfaces and interfaces at the nano-scale, with particular emphasis on identifying the factors that control atomic-scale diffusion and transport properties. The overarching goal is to outline, with examples, a predictive modeling procedure of stable structures of novel materials that, on the one hand, facilitates a better understanding of experimental results, and on the other hand, provide guidelines for future experimental work. The results of this dissertation are useful in future miniaturization of electronic devices, predicting and engineering functional novel nanostructures. A variety of theoretical and computational tools with different degrees of accuracy is used to study problems in different time and length scales. Interactions between the atoms are derived using both ab-initio methods based on Density Functional Theory (DFT), as well as semiempirical approaches such as those embodied in the Embedded Atom Method (EAM), depending on the scale of the problem at hand. The energetics for a variety of surface phenomena (adsorption, desorption, diffusion, and reactions) are calculated using either DFT or EAM, as feasible. For simulating dynamic processes such as diffusion of adatoms on surfaces with dislocations the Molecular Dynamics (MD) method is applied. To calculate vibrational mode frequencies, the infinitesimal displacement method is employed. The combination of non-equilibrium Green’s function (NEGF) and DFT is used to calculate electronic transport properties of molecular devices as well as interfaces and junctions.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Organic solar cells offer attractive properties for novel applications and continuous advances in material and concept development have led to significant improvements in device performance. To exploit their full potential (roll-to-roll production of flexible and top-illuminated devices, using e.g. opaque metal foil or textile as substrate), highly transparent, conductive, mechanically flexible, and cost-efficient top electrodes are of great importance. The current standard material indium tin oxide (ITO) is rigid, expensive and requires a high energy / high temperature deposition process, limiting ITO (and other transparent conductive oxides) to bottom electrode applications. This work presents fundamental investigations to understand and control the properties of transparent conductors and documents four different approaches to prepare transparent electrodes on top of efficient small molecule organic solar cells, with the aim to replace ITO. Fullerene C60 layers are investigated as completely carbon-based electrodes. For an optimized doping concentration, sheet resistance and transmittance are improved and efficient solar cells are realized. Since the lateral charge transport is still limited, a combination with a microstructured conductor is suggested. Pulsed laser deposition allows for the first time a damage-free preparation of gallium doped zinc oxide (ZnO:Ga) layers on top of organic devices by careful optimization of the deposition atmosphere. ZnO:Ga electrodes with a transmittance of Tvis = 82.7 % and sheet resistance Rs = 83 Ohm/sq are obtained. The formation of local shunts due to ZnO:Ga droplets is identified and then prevented by a shadow mask between the target and the sample, enabling solar cells with similar efficiency (2.9 %) compared to a reference device using a state-of-the-art metal top contact. Another very promising alternative are intrinsically flexible, ultra-thin silver layers. By introducing an oxide interlayer, the adverse interpenetration of silver and organic materials is prevented and the charge extraction from the solar cells is improved. With a second oxide layer on top, the silver electrode is significantly stabilized, leading to an increased solar cell lifetime of 4500 h (factor of 107). Scanning electron micrographs of Ag thin films reveal a poor wetting on organic and oxide substrates, which strongly limits the electrode performance. However, it is significantly improved by a 1 nm thin seed layer. An optimized Au/Ag film reaches Tvis = 78.1 % and Rs = 19 Ohm/sq, superior to ITO. Finally, silver electrodes blended with calcium show a unique microstructure which enables unusually high transmittance (84.3 % at 27.3 Ohm/sq) even above the expectations from bulk material properties and thin film optics. Such values have not been reached for transparent electrodes on top of organic material so far. Solar cells with a Ca:Ag top electrode achieve an efficiency of 7.2 %, which exceeds the 6.9 % of bottom-illuminated reference cells with conventional ITO electrodes and defines a new world record for top-illuminated organic solar cells. With these electrodes, semi-transparent and large-area devices, as well as devices on opaque and flexible substrates are successfully prepared. In summary, it is shown that ZnO:Ga and thin metal electrodes can replace ITO and fill the lack of high performance top electrodes. Moreover, the introduced concepts are not restricted to specific solar cell architectures or organic compounds but are widely applicable for a variety of organic devices.