Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle this problem and this propels the research for finding novel materials with unique properties. The isolation of graphene, a single layer of graphite in 2004 had dramatically pioneered a new regime of research and investigation as a potential material to replace traditional Si. Graphene is the most widely studied two dimensional (2D) material exhibiting fascinating electronic, optoelectronic and electrochemical properties. Room temperature graphene has very high carrier mobility, a hundred times larger than that of Si, but it lacks a bandgap preventing its application in digital electronics. However, the advent of graphene initiated exploration of other 2D materials as a possible replacement for Si for future generation of electronic devices. Other 2D layered materials include transition metal dichalcogenides (TMDs), other layered metal chalcogenides, black phosphorus (BP), boron nitride (BN) etc which are also attractive due to fascinating electronic band structure and layer dependent properties that have demonstrated potential applications in optoelectronics and semiconductor devices. Metal chalcogenides are among the well-studied layered materials that have been isolated as high-quality and two-dimensional crystals. Among the 2D layered metal chalcogenide materials is tin selenide (SnSe), which belongs to group IV--VI that has attracted considerable attention due to its interesting structural and optical properties, hence it has potential applications in optoelectronics, photovoltaics, memory, energy storage, and catalysis. To date, SnSe films have been produced by exfoliation or chemical vapor deposition that produces flaky films. In this research, uniform, smooth and high quality SnSe thin films were grown over large area (5cm x 5cm) Si/SiO2 substrates using Atomic Layer Deposition (ALD). Films were grown over a temperature range of 350°C to 450°C, which exhibit p- type semiconductor characteristics. ALD is perfect for the growth of layered materials due to its precise controllability of film composition and thickness as the growth proceeds layer by layer. Structural and optical properties of the as-grown films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These analyses show growth of 2 dimensional, orthorhombic phase films. Magnetic analysis shows a paramagnetic behavior. Back-gated transistors were fabricated for electrical characterization which showed p-type conductance, with an average hole mobility of 10 cm2/V.s and Ion/Ioff ratio of ~105.

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Orientador: Steven F. Durrant / Banca: Johnny Vilcarromero Lopez / Banca: Douglas Soares Galvão / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Filmes finos amorfos de carbono hidrogenado fluorados produzidos por plasma possuem propriedades excelentes, tais como baixo coeficiente de atrito, baixa reatividade química, alta resistência a ácidos, alta hidrofobicidade, além de propriedades ópticas notáveis. Neste estudo filmes finos foram produzidos empregando plasmas de descargas luminescentes contendo diferentes proporções de gases em uma mistura de C2H2 Ar e SF6. O presente projeto visa a análise das alterações das propriedades ópticas dos filmes produzidos a partir de diferentes concentrações de SF na mistura. Investigaram-se as características químicas dos filmes, através de Espectroscopia de Absorção no Infravermelho e Espectroscopia de Fotoelétrons de Raios-X, confirmando que o aumento da concentração de flúor é dependente do aumento da concentração de SF na mistura de gases. As medidas do ângulo de contato demonstraram que o aumento da fluoração do filme, aumenta sua hidrofobicidade. Verificou-se que o índice de refração diminuiu com o aumento da fluoração do filme. O gap óptico foi calculado por duas técnicas diferentes, demonstrando que o aumento da concentração de flúor no filme tem relação direta com o aumento do gap óptico. Modelos computacionais permitiram comparar o gap óptico experimental com o seu equivalente teórico, verificando que o aumento da densidade de ligações C-F aumenta o fap. Também foram utilizados modelos computacionais para comparar o gap óptico teórico de filmes a-C:H:CI e a C:Si:O:H:F com os obtidos experimentalmente por Turri e Gonçalves em seus trabalhos. As tendências do gap óptico em função do grau de halogenação obtidas experimentalmente e por modelagem são consistentes / Abstract: Amorphous hydrogenated fluorinated carbon thin films deposited in cold plasmas have excellent properties, such as low friction coefficient, low chemical reactvity, and high acid resistance, as well as notable optical properties. In this study, thin films were produced using glow discharge plasmas fed different proportions of C2H2, Ar SF6. The present project aims to analyze the changes in some optical properties of films produced at different proportions of SF in the mixture. The chemical properties of the films, studied using Infrared Reflection Absorption Spectroscopy (IRRAS) and X-Ray Photoelectron Spectroscopy (XPS), confirm that the films become increasingly fluorinated at greater SF6 flow rates. Contact angle measurements showed that increases in the film fluorination, increase its hydrophobicity. The refractive index decreases with increasing fluorination of the film. The optical gap was calculated by two different techniques, demonstrating tha increase in fluorine concentration in the film is directly related to the increase in the optical gap. Computacional models allow comparison of the experimental optical gap with its theoretical equivalent, verifying that an increases the optical gap. Computational models were also used to compare the theoretical optical gap of a-C:H;CI and a-C:Si:O:H:F films with values obtained experimentally by Turri and Gonçalves, respectively. The experimentally observed and modeled tendencies in the optical gap as a function of the dregree of film halogenation are consistent / Mestre

Made available in DSpace on 2014-06-11T19:30:19Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-12-20Bitstream added on 2014-06-13T19:06:19Z : No. of bitstreams: 1 oliveiraneto_am_me_bauru.pdf: 2071068 bytes, checksum: 036a5bf6e160d23843a1ca75ec0fd923 (MD5) / Filmes finos amorfos de carbono hidrogenado fluorados produzidos por plasma possuem propriedades excelentes, tais como baixo coeficiente de atrito, baixa reatividade química, alta resistência a ácidos, alta hidrofobicidade, além de propriedades ópticas notáveis. Neste estudo filmes finos foram produzidos empregando plasmas de descargas luminescentes contendo diferentes proporções de gases em uma mistura de C2H2 Ar e SF6. O presente projeto visa a análise das alterações das propriedades ópticas dos filmes produzidos a partir de diferentes concentrações de SF na mistura. Investigaram-se as características químicas dos filmes, através de Espectroscopia de Absorção no Infravermelho e Espectroscopia de Fotoelétrons de Raios-X, confirmando que o aumento da concentração de flúor é dependente do aumento da concentração de SF na mistura de gases. As medidas do ângulo de contato demonstraram que o aumento da fluoração do filme, aumenta sua hidrofobicidade. Verificou-se que o índice de refração diminuiu com o aumento da fluoração do filme. O gap óptico foi calculado por duas técnicas diferentes, demonstrando que o aumento da concentração de flúor no filme tem relação direta com o aumento do gap óptico. Modelos computacionais permitiram comparar o gap óptico experimental com o seu equivalente teórico, verificando que o aumento da densidade de ligações C-F aumenta o fap. Também foram utilizados modelos computacionais para comparar o gap óptico teórico de filmes a-C:H:CI e a C:Si:O:H:F com os obtidos experimentalmente por Turri e Gonçalves em seus trabalhos. As tendências do gap óptico em função do grau de halogenação obtidas experimentalmente e por modelagem são consistentes / Amorphous hydrogenated fluorinated carbon thin films deposited in cold plasmas have excellent properties, such as low friction coefficient, low chemical reactvity, and high acid resistance, as well as notable optical properties. In this study, thin films were produced using glow discharge plasmas fed different proportions of C2H2, Ar SF6. The present project aims to analyze the changes in some optical properties of films produced at different proportions of SF in the mixture. The chemical properties of the films, studied using Infrared Reflection Absorption Spectroscopy (IRRAS) and X-Ray Photoelectron Spectroscopy (XPS), confirm that the films become increasingly fluorinated at greater SF6 flow rates. Contact angle measurements showed that increases in the film fluorination, increase its hydrophobicity. The refractive index decreases with increasing fluorination of the film. The optical gap was calculated by two different techniques, demonstrating tha increase in fluorine concentration in the film is directly related to the increase in the optical gap. Computacional models allow comparison of the experimental optical gap with its theoretical equivalent, verifying that an increases the optical gap. Computational models were also used to compare the theoretical optical gap of a-C:H;CI and a-C:Si:O:H:F films with values obtained experimentally by Turri and Gonçalves, respectively. The experimentally observed and modeled tendencies in the optical gap as a function of the dregree of film halogenation are consistent

Orientador: Roberto de Toledo Assumpção, Jorge Ivan Cisneros / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Mecanica / Made available in DSpace on 2018-07-21T06:08:40Z (GMT). No. of bitstreams: 1 Carneiro_LuizCarlosCunha_M.pdf: 13306398 bytes, checksum: a8cc72f601e22e70353938019781d5df (MD5) Previous issue date: 1996 / Resumo: Filmes finos de CdS foram preparados sobre lâminas de vidro para microscopia e caracterizados morfológica, estrutural e opticamente. Os resultados de microscopia eletrônica (transmissão e varredura) mostraram que o filme é composto de duas camadas distintas: um depósito amorfo e uma segunda camada policristalina constituída por uma mistura de fases wurtzita e zinc blend (difração de elétrons e raios-X). Como resultado da existência destas camadas, da presença das fases alotrópicas e também de fIutuações estequiométricas, os filmes apresentaram variações nas propriedades ópticas, sendo de particular importância a variação da Eg da ordem de 100 meV em torno do gap óptico aceito para o CdS (Eg = 2,42 eV) / Abstract: Cadmium sulphide have much technological attraction for their application on heterojunction optoelectronic devices, particularly solar cells. In this work we study thin films ofthis material, prepared by chemical bath deposition (CBD) process. Morphologic, structural and stoichiometric data are correlated to the optical properties, namely the energy gap (Eg). Scanning Electron Microscopy and Transmission Electron Diffraction showed that the whole film is composed as thin amorphous layer preceding a thick polycrystalline phase. Transmitance and refletance measurements carried out on specimens in the 0,4 - 2,4 um thickness range showed a variation in Eg (about 200 meV) which can be understood in terms of the other above mentioned properties (surface morphology, stoichiometry and this relative proportion of the amorphous to the crystalline phase) / Mestrado / Materiais e Processos de Fabricação / Mestre em Engenharia Mecânica

Ph.D. / In the search to improve the conversion efficiency of solar cells such as α-Si and CuInSe2 cells, attention have recently been focused on the use of transparent conducting oxides (TCO's) as window layers and top electrodes in these cells. Materials such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO) thin films were used due to their excellent electro-optical properties, but it was found that they were unstable when subjected to a hydrogen plasma (during the a-Si deposition) and that the materials reduced to their metallic forms, degrading their electrical and optical properties. Zinc oxide (ZnO), however, possess electrical and optical properties equal to ITO and FTO, but is stable in the presence of a hydrogen plasma. In this study a system for the deposition of ZnO thin films by spray pyrolysis was developed and the films successfully deposited. The films were also doped with A1C1 3 in an attempt to further improve the films' conductivities. The films were then characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical measurements (Hall and four-point probe measurements) and optical analyses of the films. The films were compared with films deposited by atomic layer epitaxy (ALE) and DC sputtering. It was found that the films were crystalline with a predominantly (002) preferred orientation. The addition of Al as dopant, however, resulted in the film structure deteriorating. The SEM micrographs obtained of the films indicated films with a close-packed structure, existing of small grains and the film surface having a textured appearance. It was further found that the deposition parameters of the films influenced both the structures of the films and the morphologies and the micrographs indicated that the addition of Al as dopant resulted in the film formation being inhibited and even resulting in no proper film being deposited. It was found that the as-deposited ZnO films were resistive and that the films had to be subjected to a post-deposition annealing to decrease the film resistivity. The annealing conditions were investigated and it was found that annealing the films in hydrogen at their deposition temperature for an hour resulted in the largest decrease in the films' resistivities, typically two orders of magnitude. Studies of the substrate temperature indicated that the films had to be deposited at between 350 and 420°C and that a reduction in the substrate temperature resulted in the film resistivity increasing. Contrary to literature, it was found that the addition of Al as dopant had no beneficial influence on the electrical properties of the films and that dopant concentrations exceeding 1.0 at.% resulted in the film resistivity increasing. The films were characterized optically by analysing the transmission spectra obtained of the films, using the envelope technique. It was found that the films had transmissions exceeding 95% and that the refractive indices and optical gaps centred around 1.99 and 3.3 eV respectively. Both properties were affected by the deposition parameters. The ZnO films deposited by spray pyrolysis compared excellently with the films prepared by ALE and DC sputtering in all aspects. It is hence clear that ZnO films, with characteristics suitable for solar cell application, can be deposited by the simple and inexpensive technique of spray pyrolysis.

Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, β-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K

We have performed fluorescence extended X-ray absorption fine structure (EXAFS) measurements on the Cd K-edge of partial electrolyte (PE) treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� (CIGS) thin film samples using synchrotron X-ray radiation. This data was compared to the EXAFS spectra of CdSe and CdO standards. Cd local structure models were constructed and used for the least square analysis of the spectra. The first model employed implantation of a cadmium atom and a single oxygen atom into the CIGS lattice. Specifically, an oxygen atom was introduced in the tetrahedral bonded Cd-Se local structure. Employing FEFF8 with WinXAS software package, experimental data was theoretically fitted to the first shell single-scattering paths of the Cd atom in the (PE) treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� thin film samples. The main peak observed in the data represents the Cd-Se bonds and the shoulder corresponds to the Cd-O bond. However, the number of total nearest neighbors is not consistent with this model. A two-phase model that includes both Cd-Se tetrahedron and Cd-O octahedron were then reconstructed. Again, a least-agrees very well with the experimental data, and the total first nearest neighbor number is consistent with the two phase model at NN=4.2. This study indicates the surface of Cd partial electrolyte treated Cu(In[subscript 0.7]Ga[subscript 0.3])Se��� thin films contains both CdSe and CdO. / Graduation date: 2004

The objective of the present dissertation is to advance the science and engineering of metal-dielectric thin-film structures for ultrafast all-optical applications. The research presented consists of three parts: first, the linear and nonlinear optical (NLO) properties of Au and Ag/Au bilayer metallic thin films are comprehensively studied; then the design and properties of a novel nonlinear device structure are presented and finally an ultrafast all-optical shutter is developed and applications are discussed. In the first part, this study describes the linear and NLO properties of bilayer metallic films and shows that they can be tuned by controlling the mass-thickness ratio between Au and Ag. The combined properties of these bilayers are attractive for active plasmonic applications and nonlinear optical filters. Detailed physical models describing the linear and NLO response of Au and Ag/Au bilayers are presented and compared with experiments. In the second part, these models are used to optimize the NLO response of a novel Au-based NLO device. With only four layers, this novel device strongly amplifies the NLO response of the component Au thin film. NLO devices with broad spectral and angular bandwidths in the visible spectral region are demonstrated. The narrow band dependent NLO response of the NLO device is shown to lead to all-optical controls of high peak-power optical signal pulses. Finally, the NLO device technology is integrated into a novel ultrafast all-optical shutter, which allows temporal opening windows (the time shutter remains open) as short as a few ps. Ultrafast all-optical shutter potentially can temporally shape high peak-power nanosecond optical pulses, which could benefit biomedical and micromachining applications. Other possible optical applications such as short electron, X-ray pulse generations, ultrafast photography, and biomedical imaging will also be discussed.