In this work, the Dyson's equation formalism is outlined and applied toseveral open quantum systems. These systems are composed of a core,quantum-mechanical set of discrete states and several continua, representing macroscopic systems. The macroscopic systems introducedecoherence, as well as allowing the total particlenumber in the system to change.Dyson's equation, an expansion in terms of proper self-energy terms, isderived. The hybridization of two quantum levelsis reproduced in this formalism, and it is shown that decoherence followsnaturally when one of the levels is replaced by a continuum.The work considers three physical systems in detail. The first,quantum dots coupled in series with two leads, is presented in a realistic two-level model. Dyson's equation is used to account for the leads exactly to all ordersin perturbation theory, and the time dynamics of a single electron in the dotsis calculated. It is shown that decoherence from the leads damps the coherentRabi oscillations of the electron. Several regimes of physical interest areconsidered, and it is shown that the difference in couplings of the two leadsplays a central role in the decoherence processes.The second system relates to the decay-out ofsuperdeformed nuclei. In this case, decoherence is provided by coupling to theelectromagnetic field. Two, three, and infinite-level models are consideredwithin the discrete system. It is shown that the two-level model is usuallysufficient to describe decay-out for the classic regions of nuclearsuperdeformation. Furthermore, a statistical model for the normal-deformedstates allows extraction of parameters of interest to nuclear structure fromthe two-level model. An explanation for the universality of decayprofiles is also given in that model.The final system is a proposed small molecular transistor. TheQuantum Interference Effect Transistor is based on a single monocyclic aromatic annulene molecule, with twoleads arranged in the meta configuration. This device is shown to be completely opaque to charge carriers, due to destructive interference. Thiscoherence effect can be tunably broken by introducing new paths with a real orimaginary self-energy, and an excellentmolecular transistor is the result.

La unión de las propiedades de los CNT con los principios de reconocimiento molecular se presenta como una base adecuada para el desarrollo de sensores altamente específicos. El objetivo de la presente tesis ha sido desarrollar sensores químicos, del tipo transistores de efecto campo (CNTFET), basados en interacciones receptor-analito, mediante el empleo de los nanotubos de pared sencilla (SWCNT), que actúan como transductores de la señal analítica.Las principales etapas de la parte experimental han sido: Crecimiento de SWCNT con la técnica de deposición química en fase vapor. Integración de los SWCNTs en sistemas CNTFET. Empleo del CNTFET como base del sensor en distintos campos utilizando modelos de reconocimiento molecular. Dependiendo del tipo de funcionalización de los SWCNTs se pueden obtener sensores para proteínas, iones, etc. Como resultado, se han desarrollado y estudiado sensores basados en CNTFETs para la detección distintos analitos de interés, como son la Inmunoglobulina G Humana, los iones potasio y el dióxido de azufre. / The general objective of this thesis is to develop chemical sensors whose sensing capacities are based on the principle of molecular recognition and where the transduction is carried out by single-walled carbon nanotubes (SWCNT).The sensing device used is the carbon nanotube field-effect transistor (CNTFET). The new structure of the CNTFET allows nanotubes to be integrated at the surface of the devices, thus exploiting SWCNTs' sensitivity to changes in their environment. The functionalization of SWCNTs with several types of molecular receptors such as antibodies, ion selective membranes, and synthetic receptors, achieve a high selectivity towards the analyte of interest. This thesis shows that CNTFETs can be used for the successful selective detection of different types of target analytes. These can be biomolecules such as antigens, small compounds such as cations or gas-phase compounds such as SO2.

In the past decade, nanomechanical resonators have found use in the work towards understanding mesoscopic quantum systems and the necessary validation of quantum mechanics on this scale. In 2010, the observation and state manipulation of a nanomechanical quantum system was achieved for the first time by O'Connell et al.. In 2002, Knobel and Cleland proposed to use a radio frequency superconducting single-electron transistor (RF-SSET), a fast and sensitive charge amplifier, to sense the quantum-limited motion of a piezoelectrically coupled nanomechanical resonator. The work presented in this thesis is towards the realization of the RF-SSET component of this device. An in-house fabrication recipe for making SETs with tunnel junction areas < 100^2 nm^2 and resistances between 20 kΩ and 150 kΩ was developed, in the end producing six SETs with resistances (36 ± 8) kΩ that were not susceptible to aging effects. Three measurement circuits were designed and used to characterize one of these SETs in the superconducting state (SSET) and operated in the DC and RF modes in a cryostat at a base temperature of 320~mK. Lock-in measurements revealed the SSET junction capacitances as 206 and 305 aF, contributing to a charging energy of (296 ± 11) x 10^(-6) eV. The resonant LC tank, which permitted RF operation, was also characterized at base temperature. The charge sensitivity of the RF-SSET was 6.8 x 10^(-5) e/√Hz (with uncertainty between 9.6 x 10^(-4) e/√Hz and 3.5 x 10^(-5) e/√Hz). With moderate improvements to the impedance matching network formed with the LC tank and greater junction resistances, an RF-SSET charge sensitivity on the order of 10^(-6) e/√Hz, required for sensing the quantum-limited motion of the nanomechanical resonator, should be achieved. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2010-08-10 17:38:43.798

The last six years has seen the emergence and rapid development of a new type of field effect transistor, the High Electron Mobility Transistor (HEMT), which offers improved performance in both digital and analogue circuits compared with circuits incorporating either MEtal Semiconductor (MES) or Metal Oxide Semiconductor (MOS) FETs. A new physically-based analytic model for HEMTs, which predicts the DC and RF electrical performance from the material and structural parameters of the device, is presented. The efficacy of the model is demonstrated with comparisons between simulated and measured device characteristics, at DC and microwave frequencies. The good agreement with experiment obtained with the model indicates that velocity overshoot effects are considerably less important in HEMTs than has been widely assumed, and that the electron transit velocity in submicron devices is approximately 10 cm/s, rather than around 2x10 cm/s. The Inverted HEMT, one of the major HEMT structural variants, is emphasized throughout this work because of its potential advantages over other variants, and practical results from 0.5 micron gate length Inverted HEMTs are presented. / Thesis (Ph.D.)-University of Natal, Durban, 1986.

This thesis describes a novel concept for a field-effect transistor based on metallic channels. Latest research demonstrates that the bulk (3D) properties of many materials begin to change when confined to 2D sheets, or 1D nanowires. Particularly, the bandgap increases and the density of states decreases. In this work, this effect is explored further to demonstrate its application to field-effect transistors. Certain metals such as Gold and Silver in these dimensions have extremely low density of states in particular energy regions and through gate modulation can be partially depleted from electrons thus creating conditions for field-effect. A simulation study of Gold channel FET demonstrates ION/IOFF of 30 and superior current driving capability compared to the state-of-the art 22nm SiGe ETSOI as well as 30nm nanotube transistors.

This thesis describes a novel concept for a field-effect transistor based on metallic channels. Latest research demonstrates that the bulk (3D) properties of many materials begin to change when confined to 2D sheets, or 1D nanowires. Particularly, the bandgap increases and the density of states decreases. In this work, this effect is explored further to demonstrate its application to field-effect transistors. Certain metals such as Gold and Silver in these dimensions have extremely low density of states in particular energy regions and through gate modulation can be partially depleted from electrons thus creating conditions for field-effect. A simulation study of Gold channel FET demonstrates ION/IOFF of 30 and superior current driving capability compared to the state-of-the art 22nm SiGe ETSOI as well as 30nm nanotube transistors.

No description available.

Le transistor monoélectronique (SET) est un candidat que l'on croyait avoir la capacité de remplacer le transistor des circuits intégrés actuel (MOSFET). Pour des raisons de faible gain en voltage, d'impédance de sortie élevée et de sensibilité aux fluctuations de charges, il est considéré aujourd'hui qu'un hybride tirant profit des deux technologies est plus avantageux. En exploitant sa lacune d'être sensible aux variations de charge, le SET est davantage utilisé dans des applications où la détection de charge s'avère indispensable, notamment dans les domaines de la bio-détection et de l'informatique quantique. Ce mémoire présente une étude du transistor monoélectronique utilisé en tant que détecteur de charge. La méthode de fabrication est basée sur le procédé nanodamascène développé par Dubuc et al. [11] permettant au transistor monoélectronique de fonctionner à température ambiante. La température d'opération étant intimement liée à la géométrie du SET, la clé du procédé nanodamascène réside dans le polissage chimico-mécanique (CMP) permettant de réduire l'épaisseur des SET jusqu'à des valeurs de quelques nanamètres. Dans ce projet de maîtrise, nous avons cependant opté pour que le SET soit opéré à température cryogénique. Une faible température d'opération permet le relâchement des contraintes de dimensions des dispositifs. En considérant les variations de procédés normales pouvant survenir lors de la fabrication, la température d'opération maximale calculée en conception s'étend de 27 K à 90 K, soit une énergie de charge de 78 meV à 23 meV. Le gain du détecteur de charge étant dépendant de la distance de couplage, les résultats de simulations démontrent que cette distance doit être de 200 nm pour que la détection de charge soit optimale. Les designs conçus sont ensuite fabriqués sur substrat d'oxyde de silicium. Les résultats de fabrication de SET témoignent de la robustesse du procédé nanodamascène. En effet, les dimensions atteintes expérimentalement s'avèrent quasi identiques à celles calculées en conception. Les mesures électriques à basse température de SET fabriqués démontrent un blocage de Coulomb avec une énergie de charge de 10 meV et une température d'opération maximale de 10 K. Un effet de grille est aussi observé par l'application d'une tension sur la grille latérale et les électrodes d'un SET à proximité. Les paramètres extraits à partir du diamant de Coulomb sont en accord avec les géométries du transistor fabriqué, à l'exception de la capacité degrille et de couplage. Enfin, l'étude de la détection de charge est réalisée par simulation à partir de ces paramètres. Elle permet de conclure que la détection de charge peut être optimisée en augmentant les surfaces de couplage de l'électromètre.

Cette étude porte sur l'intégration hybride de transistors à un électron (single-electron transistor, SET) dans un noeud technologique CMOS. Les SETs présentent de forts potentiels, en particulier en termes d'économies d'énergies, mais ne peuvent complètement remplacer le CMOS dans les circuits électriques. Cependant, la combinaison des composants SETs et MOS permet de pallier à ce problème, ouvrant la voie à des circuits à très faible puissance dissipée, et à haute densité d'intégration. Cette thèse se propose d'employer pour la réalisation de SETs dans le back-end-of-line (BEOL), c'est-à-dire dans l'oxyde encapsulant les CMOS, le procédé de fabrication nanodamascène, mis au point par C. Dubuc. Les avantages de ce procédé sont triples : capacité de créer des dispositifs SETs à large marge d'opération, répétabilité élevée, et compatibilité potentielle avec une fabrication en BEOL. Ce dernier point est particulièrement important. En effet, il ouvre la voie à la fabrication de nombreuses couches de SETs empilées les unes sur les autres et formant ainsi des circuits 3D, réalisées au-dessus d'une couche de CMOS. Ceci permettrait d'apporter une forte valeur ajoutée aux plaques de CMOS existantes. On présentera les réalisations obtenues par une adaptation du procédé nanodamascène à une fabrication en BEOL, en mettant en avant les limites rencontrées, et les perspectives d'améliorations. Des caractérisations électriques des dispositifs seront aussi présentées. Elles démontrent la fonctionnalité des dispositifs créés, et valident le transfert avec succès de la méthode nanodamascène à une fabrication en BEOL. Elles ont aussi permis d'identifier la présence d'un nombre élevé de pièges au coeur des dispositifs fabriqués. L'étude du potentiel des SETs fabriqués pour la réalisation de circuits hybride SET-CMOS a été faite au travers de simulations. D a ainsi été possible d'identifier les pistes à privilégier pour les réalisations futures de circuits hybrides.

In this thesis, I will present the experimental results of the dynamics of superconducting single electron transistors (sSETs), under the influence of tunable dissipation. The sSET, consisting of two dc SQUIDs in series and the third gate electrode, is deposited onto a GaAs/AlGaAs heterostructure which contains a two dimensional electron gas plane 100nm beneath the substrate surface. The Josephson coupling energy, charging energy and dissipation related Hamiltonian can all be tuned in situ, while keeping others unchanged. We measured the switching current statistics and the transport properties, as a function of the dissipation and gate charge at different temperatures. If the sSET is in the classical regime where phase is a good quantum variable, we found that the switching current and corresponding Josephson energy decrease as dissipation increases. Our observation agrees qualitatively with the theoretical calculation of a single Josephson junction with dominant Josephson energy, in a frequency dependent dissipative environment where energy barrier decreases as dissipation increases in thermally activated escape regime. This dissipation dependence result can be understood as the consequence of a reduced quantum fluctuations in the charge numbers. Whereas in the charging regime, the switching current shows a 1e periodicity with respect to gate charge, indicating a pronounced charging effect. At a specific gate charge number, quantum fluctuations of the phase variable are compressed as dissipation increases, resulting in an enhanced switching current and Josephson energy. This result matches the theory of a sSET capacitively coupled to a dissipative environment qualitatively. The temperature dependence of the switching current histogram indicates the existence of both quantum and classical thermal phase diffusion. Moreover, quantum charge fluctuations are minimized at the degeneracy point, causing a sharp dip on the width of the switching current histogram. For a sSET with comparable Josephson energy and charging energy, quantum fluctuations of both phase and charge variables are significant. The influence of dissipation on the dynamics of the device is distinct in the classical and charging regimes. Dissipation compresses quantum phase fluctuations in the charging regime, whereas reduces the quantum charge fluctuations in the classical regime. The transition between these two regimes is found to be determined by the tunnel resistance of the SQUID. The competition between Josephson and charging energies, however, is not the intrinsic parameter of this transition. Our results imply that a detailed theoretical calculation of a sSET with comparable Josephson coupling energy and charging energy under the influence of dissipation is needed.