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Développement par voie Sol-Gel de méthodes d'assemblage de cristaux à optique non linéaire pour applications laser / Sol-Gel method for non-linear optical cristals bondingSraïki, Guillaume 23 January 2015 (has links)
Dans cette thèse CIFRE nous avons élaboré une solution originale d’assemblage de cristaux optiques pour applications lasers avec les sociétés Cristal Laser et Oxxius. Nous avons ensuite optimisé notre composition de colle ainsi que le procédé d’encollage des cristaux avec la réalisation d’un robot par nos partenaires industriels. De nombreux tests d’assemblage ont été effectués avec des homo-assemblages de paires de cristaux de SiO2, Quartz, YAG, KTP, LBO, BBO et RTP. Ces homo-assemblages sont ensuite traités thermiquement pour stabiliser notre interface de colle et nos résultats sont satisfaisants. Nous avons également réalisé des hétéro-assemblages avec des paires de cristaux de nature différente parmi les cristaux précédemment étudiés comme YAG/Quartz ou SiO2/KTP. Les résultats que nous obtenons avec ces hétéro-composites semblent indiquer que le différentiel de CTE entre les pièces assemblée limite fortement le bon déroulement des traitements thermiques. Nous avons donc étudié le CTE ainsi que le comportement de notre interface de colle en fonction de la température afin de proposer une composition et un traitement adapté à la réalisation de ces hétéro-composites. / In this CIFRE thesis we elaborate a bonding solution, with Cristal Laser and Oxxius companies, for non-linear optical crystals for laser applications. We had to optimize solution’s composition and the bonding process, this resulted in the creation of a bonding robot by our industrial partners. Numerous homo-assemblies bonding tests has been realized with the following crystal pairs of SiO2, Quartz, YAG, KTP, LBO, BBO and RTP. Those homo-assemblies have been thermally treated to stabilize our bonding solution interface and we obtained relatively good results. We also bonded hetero-assemblies with different crystal pairs like YAG/Quartz or SiO2/KTP. The results we get with these hetero-composites suggest that the difference in CTE between the assembled parts greatly limits the smooth heat treatments. We therefore investigated the CTE and the behavior of our adhesive interface depending on the temperature to provide adapted composition and treatment to the realization of these hetero-composites.
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Estudo das propriedades ópticas e de transporte eletrônico em filmes finos de TiO2 dopados com nitrogênio / Study of optical and transport properties of nitrogen doped TiO2 thin filmsRamos, Raul, 1988- 28 August 2018 (has links)
Orientador: Luiz Fernando Zagonel / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-28T03:52:44Z (GMT). No. of bitstreams: 1
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Previous issue date: 2015 / Resumo: Eletrodos condutores transparentes (TCE) possuem grande importância para tecnologias de informação e geração de energia. O TCE mais eficiente na atualidade é o ITO (In2O3 dopado com Sn), que pode alcançar resistividades em torno de 2.10-4 ?cm e uma transmitância ótica de 80% a 90% na região do visível. Entretanto, a escassez dos recursos naturais de Índio e sua grande demanda sugerem a necessidade de materiais alternativos. O presente estudo tem por objetivo investigar as propriedades óticas, eletrônicas e estruturais de filmes finos de TiO2 (fase anatase) dopados com Nitrogênio. A deposição dos filmes foi feita por Deposição por Feixe de Íons (IBD) por bombardeamento de um alvo de titânio puro com íons de Ar+ em atmosfera de O2. Os filmes, com uma espessura de ?90 nm, foram depositados em substrato de quartzo amorfo (Herasil-1) a temperaturas de 400 ou 500°C. Depois, os filmes são dopados com implantação iônica, variando o tempo de 10 a 60 minutos, com feixe de íons misto a baixa energia de N2+ e H2+ com 150 eV e sob a mesma temperatura de crescimento. Após a implantação, medidas Hall indicam que a densidade de portadores majoritários nos filmes de anatase dopados com nitrogênio chegam até ?1019 cm?3 (enquanto filmes não dopados tem densidade de cargas de ?1012 cm?3). A resistividade dos filmes dopados chegam até 10?1 ?cm enquanto mantem boa transmissão ótica (>80%). De fato, dependendo do tempo de dopagem e da temperatura do substrato durante o processo, a transmissão de até 85% podem ser obtida em 550 nm com tal resistividade (?10?1 ?cm). Espectroscopia de fotoelétrons emitidos por raio-x (XPS) realizadas in situ mostram que a composição na superfície é compatível com TiO2?xNx com concentração de nitrogênio de até ? 20%. Difração de raio-x com ângulo de incidência rasante (GIXRD) confirmaram a estrutura cristalina anatase dos filmes antes e após a implantação iônica à baixa energia (150 eV). Este estudo indica que é possível dopar a amostra anatase com nitrogênio através do uso de um feixe de íons de baixa energia. Tal abordagem é interessante por permitir um controle da concentração de dopantes (Nitrogênio através de um precursor gasoso) de forma mais controlada do que usualmente obtido por sputtering reativo / Abstract: Transparent conductive electrodes (TCE) have great importance for information and energy technologies. The most efficient TCE is currently the ITO (Sn-doped In2O3), which may have a resistivity lower than 2·10?4 ?cm and an optical transmittance of 80% to 90% in the visible region. However, the scarcity of natural resources of Indium and its great demand suggests the need of alternative materials. The present study aims to investigate the optical, electronic and structural properties of thin films of TiO2 (anatase phase) doped with nitrogen. The films deposition is made by Ion Beam Deposition (IBD) by bombarding a pure titanium target with Ar+ ions in O2 atmosphere to a thickness of about 90 nm. The films are deposited on an amorphous quartz substrate (Herasil-1) at 400 or 500 °C. Afterwards, the films are doped by ion implantation with low-energy ion beam mixed of N2+ and H2+ at 150 eV and under the same temperature of the growth for times ranging from 10 to 60 minutes. After implantation, Hall measurements indicated that the majority carrier density in the nitrogen doped anatase films reaches up to ? 1019 cm?3 (while the undoped films have a carrier density of ? 1012 cm?3). The resistivity of the doped films is as low as 10?1 ? cm while maintaining good optical transmission. Indeed, depending on the doping time and substrate temperature, transmission of up to 90% could be obtained at 550 nm with this resistivity. X-ray photoelectron spectroscopy (XPS) performed in situ shows that the surface composition is compatible with N:TiO2?x with nitrogen concentrations of up to ? 20%. Small angle x-ray diffraction measurements (SAXRD) confirmed the anatase crystal structure of the films before and after the low energy ion implantation. This study indicates that it is indeed possible to dope anatase thin films with nitrogen by low energy ion beam. This approach is interesting for allowing a greater control of doping concentration with respect to what is usually obtained by reactive sputtering / Mestrado / Física / Mestre em Física / 2013/118682-8 / CAPES
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Relations entre le procédé céramique et les propriétés optiques de céramiques transparentes de type YAG-Nd : rôle des étapes de mise en forme et frittage / Relations between ceramic process and optical properties of Nd-YAG transparent ceramics : role of shaping and sinteringChrétien, Lucie 09 December 2014 (has links)
Depuis les années 1990, les céramiques transparentes de type YAG:Nd suscitent un vif intérêt pour des applications en tant que milieux amplificateurs de lasers de haute puissance. Les céramiques, contrairement aux monocristaux, actuellement employés pour ces applications, peuvent être fabriquées sous la forme de pièces de grande taille avec des architectures complexes. Toutefois, il apparaît que la transparence et les capacités lasers des céramiques sont fortement affectées par la présence de porosité résiduelle générant de la diffusion de lumière. Dans ce contexte, cette étude s’est attachée dans un premier temps à déterminer les mécanismes contrôlant l’évolution de la porosité des céramiques de YAG:Nd à chaque étape du procédé d’élaboration dans le but de l’éliminer. Ce travail a mis en évidence que la porosité résiduelle pouvait avoir des origines diverses, et provenir notamment des caractéristiques des poudres initiales et/ou de l’étape de frittage-réactif qui peut induire dans des conditions mal maîtrisées à un phénomène de séparation pore/joint de grains. Dans un second temps, cette étude a montré que l’emploi d’une poudre d’alumine fine et peu agglomérée, d’une mise en forme des poudres par coulage sous pression et CIP et au final, le recours à une technique de post-traitement de frittage par pressage isostatique à chaud (post-HIP) permettait d’obtenir des céramiques transparentes de YAG:Nd de microstructure homogène et de qualité laser. / Since 90’s, transparent Nd:YAG ceramics have received considerable attention as applications as amplifying media of high-power lasers. Contrary to single crystals, commonly used currently for these applications, ceramics can be fabricated into large size with complicated architectures. However, it appears that the transparency and the laser efficiency of ceramics are strongly affected by residual porosity generating light scattering. In this context, in a first step, this study focused to determine mechanisms controlling porosity evolution of Nd:YAG ceramics at each step of process in order to eliminate this one. This work showed that the residual porosity may have various origins, and result in particular of initial powder characteristics and/or reactive-sintering which can induce under certain conditions at a phenomenon of separation pore/grain boundary. In a second step, this study has shown that the use of a fine and few agglomerate alumina powder, a shaping process with pressure slip-casting and CIP and finally the use of a sinter plus Hot Isostatic Pressing technique achieved Nd:YAG transparent ceramics with homogeneous microstructure and laser quality.
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Characterization of Conductive Polycarbonate FilmsHokenek, Selma 30 March 2009 (has links)
Transparency and conductivity are highly desirable qualities in materials for modern gas sensors. Polymer gas sensors have been developed in which the polymer acts as a solid electrolyte. However, these types of sensors are opaque, which limits their potential for integration with dichromatic materials. The development of a sensor integrating conductive polymer films and dichromatic materials requires the implementation of a transparent conductive polymer film. The potential of iodine-doped bisphenol-a polycarbonate films containing bis(ethylenedioxy)-tetrathiafulvalene (BEDO-TTF) dye for sensor applications will be tested through characterization of the films at various stages of their fabrication using Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), transmission Fourier Transform Infrared Spectroscopy (FTIR), Optical Microscopy (OM), and Four Point Probe conductivity measurements (FPP). FTIR results show that there is an interaction between the polycarbonate matrix and the dye-iodine complex. Measured resistivities of the iodine doped films range from 148 Omega-cm to 2.82 kOmega-cm depending on the concentration of the iodine and exposure time. The imaging techniques used show a significant difference in the structure and the surface of the iodine doped-PC-BEDO-TTF films with respect to the bare polycarbonate films or the films mixed with the organic dye. It is also clear that the surface roughness of the prepared conductive films increases with iodine loading. These films have the potential to be used in sensor or photovoltaic applications.
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A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type SemiconductorBianchi Granato, Danilo 05 1900 (has links)
In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.
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Versatile and Tunable Transparent Conducting Electrodes Based on Doped GrapheneMansour, Ahmed 25 November 2016 (has links)
The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation.
Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.
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P-type Oxide Semiconductors for Transparent & Energy Efficient ElectronicsWang, Zhenwei 11 March 2018 (has links)
Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices.
Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices.
CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors.
Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change.
Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show excellent rectifying performance. Due to the ultra-thin nature of MoS2, the operation of hybrid vdWHs is gate-tunable, and we further discover such gate-tunability depends on the layer number of MoS2, i.e., the screening effect. The detailed study in such hybrid vdWHs provides valuable information for understanding the switching performance of junctions contain 2D materials.
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Pprava a vlastnosti transparentnch polykrystalickch keramickch materil / Processing and properties of transparent polycrystalline ceramic materialsTsler, Jan January 2020 (has links)
The presented diploma thesis is focused on the preparation and properties of transparent polycrystalline ceramic materials based on Al2O3. Theoretically, the most important technological aspects of the processing of these materials are presented. Detailed attention is given to transparent Al2O3 polycrystalline ceramics doped with rare earth elements. The influence of microstructural parameters on the optical properties (represented by RIT) is investigated on Al2O3 samples doped and codoped with dysprosium, terbium and chromium. A significant effect of the average grain size on the light transmittance of all samples is observed. The highest RIT = 55 % (measured by a laser beam with a wavelength of 632,8 nm) was achieved by an optimized preparation process for a sample doped with 0,05 at. % of dysprosium. For all samples photoluminescent properties are also analysed. The photoluminescent emission spectra correspond to the activation of doping elements. In case of the terbium and chromium codoped samples, the differences in the activation of individual dopants depending on different excitation wavelengths were demonstrated, resulting in different colour emissions for different excitation wavelengths.
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Příprava transparentní pokročilé keramiky na bázi Al2O3.MgO / Preparation of transparent advanced ceramic base on Al2O3.MgOChvíla, Martin January 2021 (has links)
Ceramic materials are in general characterized by high hardness, high modulus of elasticity, excellent abrasion resistance, etc. These properties make ceramics among others useful in optically transparent applications. An ideal form of optically transparent ceramic material is monocrystalline. However, the monocrystalline fabrication is expensive and/or time consuming. From this point of view polycrystalline ceramics is preferred. But the polycrystalline transparent ceramics fabrication is fraught with complications such as porosity, inappropriate grain size and insufficient purity. These circumstances could be solved by using sintering additives. This master’s thesis compiles literature research summarizing modern technologies of advanced ceramics sintering and ceramic polycrystalline microstructure dependence on its optical properties. The experimental part of this thesis focuses on the fabrication parameters of polycrystalline advanced ceramics based on Al2O3MgO and evaluation of their optical properties. Polycrystalline magnesium-aluminate spinel with sintering additive contents 0; 0.3 and 0.6 weight % LiOH was fabricated by optimalisation of Spark Plasma Sintering cycle. Fully dense ceramic samples of polycrystalline magnesium-aluminate spinel with favourable optical properties in visible spectrum radiation were achieved. Real In-line Transmission RIT and Total Forward Transmittance TFT were analysed. RIT exceeded 84 % at wavelength of 633 nm and TFT exceeded 83 % at wavelength above 860 nm. The decisive factors in terms of the optical properties of ceramics sintered with sintering additives were the amount of time-spending at high temperatures and the purity of ceramic powders.
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Jednostupňová převodovka vyrobená 3D tiskem / A single-speed gearbox made by 3D printingHykolli, Denis January 2021 (has links)
The aim of these theses was the creation of a single-stage gearbox by additive technology FDM / FFF. By chosen values was made dimension calculation for gears. The 3D model of the gearbox was designed in 3D software Autodesk Inventor. Single parts were produced on an FDM 3D printer by Prusa Research. Manufacturing programs for parts were prepared in PrusaSlicer. These programs were used for producing individuals parts on 3D Printer. Transparent material and printing parameters for the top of the gearbox were chosen by visual test and test of light intensity. The total cost of model production is calculated in the work. The result of these is a completely working model of a single-stage gearbox with a transparent top of the gearbox.
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