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La découverte du graphène a récemment ouvert de nouvelles opportunités en termes de fonctionnalités et de performances pour les dispositifs de spintronique. Ce travail comporte deux études sur l’utilisation du graphène en spintronique.C’est en premier lieu pour ses propriétés de transport de spin que le graphène a suscité un fort intérêt en spintronique. En effet, de par sa forte mobilité et son faible couplage spin-orbite, il est rapidement apparu comme ayant un fort potentiel pour le transport de l’information de spin avec des longueurs de diffusion de spin attendues de l’ordre de la centaine de microns.Dans une première étude, je m'intéresse au graphène en tant que plateforme pour propager un courant polarisé en spin. Je décris tout d'abord les principales techniques de mesure de vannes de spin latérales, en insistant sur l'importance de la barrière tunnel pour se placer dans les conditions appropriées à la mesure des propriétés intrinsèques au graphène. Je présente ensuite les résultats que j’ai obtenus. Je commence par ceux sur graphène épitaxié sur SiC dans lequel nous avons réussi à injecter, propager et détecter un courant polarisé en spin créé soit grâce à un injecteur ferromagnétique (Co/Al2O3), soit par effet Hall de spin (à partir du platine). Je présente ensuite les résultats obtenus sur un autre type de graphène grande surface, le graphène CVD monocouche, pour lequel j'ai pu expérimenter une nouvelle barrière tunnel: le nitrure de bore hexagonal.Par-delà ses propriétés de transport latéral, le graphène pourrait avoir un autre intérêt pour la spintronique, par exemple dans le cadre de la passivation des couches ferromagnétiques dans les jonctions tunnel magnétiques.Dans une seconde étude, je m'intéresse au graphène comme membrane pour protéger une électrode ferromagnétique de l'oxydation tout en autorisant l’extraction d’un courant polarisé en spin. Aujourd’hui, dû à la propension naturelle des matériaux ferromagnétiques à s’oxyder, les procédés humides/oxydants sont souvent exclus de la fabrication de dispositifs de spintronique. Après avoir introduit les enjeux, je présente mes résultats expérimentaux. Je montre tout d'abord qu’une monocouche de graphène suffit à empêcher l'oxydation d'une électrode de nickel et qu’un filtrage de spin intéressant apparaît à l'interface Ni/Graphène. Je valide ensuite l'ensemble de ce potentiel en montrant qu'on peut utiliser une technique oxydative de dépôt tel que l'Atomic Layer Deposition (ALD) sans endommager les propriétés de l'électrode ferromagnétique Ni+Graphène. Le procédé d’ALD, bien qu'utilisé partout en électronique (cette technique sert aujourd’hui à réaliser les grilles des transistors d’Intel), était jusqu’ici proscrit car il met en jeu des molécules telles que l'ozone ou l'eau et est donc par nature oxydant. Enfin, je montre que le filtrage de spin à l’interface Ni/Graphène aboutit alors à une inversion quasi-totale de la polarisation en spin du Ni.Ce travail de thèse montre que le graphène peut être utilisé comme canal de transport d’un courant polarisé en spin, comme membrane protectrice imperméable à l’oxydation ou encore comme filtre à spin. L’ensemble de ces travaux illustre la richesse des applications du graphène pour la spintronique. / Graphene discovery has opened new opportunities in terms of functionality and performance for spintronics devices. This work presents two examples of what graphene can bring to the spintronics field.Graphene first aroused interest amongst the community because of its excellent properties for transporting spin information. Indeed, thanks to its high reported mobilities and its weak spin-orbit coupling, graphene quickly became a high-potential candidate to transport spin information with expected spin diffusion length in the hundreds of microns range.In the first part of this thesis, I study graphene as a platform to propagate a spin polarized current. I first describe the main techniques to measure lateral spin valves, emphasizing the importance of the tunnel barrier being under the right conditions to permit measurement of the intrinsic properties of graphene. I then present my results. I begin with the results obtained on epitaxial graphene on SiC, in which I was able to inject, propagate and detect a spin current created either by a ferromagnetic injector (Co/Al2O3), or through the spin Hall effect (from Pt). Then, I present the results obtained on another large-area graphene, a single layer of graphene grown by CVD on which I tested a new unnel barrier : hexagonal boron-nitrideBeyond its potential as a platform to transport spin information, other opportunities for graphene in spintronics exist, for example its use in the passivation of ferromagnetic layers in magnetic tunnel junctions.In the second part of this thesis, I am interested in graphene’s potential as a membrane that could protect ferromagnets from oxidation while simultaneously allowing the extraction of a spin current. Indeed, because of the natural propensity of the ferromagnetic material to be oxidized, humid and oxidative processes are excluded from the fabrication of spintronic devices. After introducing the background motivation, I present my experimental results. I first show that a single layer of grapheneis enough to prevent the oxidation of a Ni electrode and that an interesting spin filtering effect happens at the interface Ni/Graphene. I then confirm this by showing that it is possible to use an oxidative technique like Atomic Layer Deposition (ALD) without damaging the properties of the ferromagnetic electrode Ni+Graphene. ALD is widely used in electronics (Intel uses it to make its transistor gates) but was up to now prohibited in spintronics because it involves oxidative molecules like water or ozone. Finally, I show that the spin-filtering effect at the interface Ni/Graphene leads to a quasi-total reversal of the spin polarisation of the Ni.This thesis shows that graphene can be used as a channel to transport spin information, as a protective membrane to protect against oxidation, or as a spin filter. All this work illustrates the richness of graphene applications for spintronics.

The main goal of this work is to introduce with the basic technologies of manufacturing MEMS (Micro-electro-mechanical-systems). Further there is mentioned properties and manufacturing of CNT (Carbon nanotubes), used in manufacturing of capacitance pressure sensor.

The master’s thesis deals with the theory of thin film technology, especially creating these layers. The work includes the distribution of vacuum deposition techniques for physical (PVD) and chemical (CVD). The main aim is to create a theme in different ways of implementation by using magnetron sputtering device, and these motives evaluated in terms of the quality of sputtering.

Thesis (PhD (Chemistry and Polymer Science))--Stellenbosch University, 2008. / The successful preparation and structural characterization of a number of N,N-dialkyl-N’-benzoyl(thio)selenourea ligands is described; where the intermolecular interactions are characterized by the presence of Resonance Assisted Hydrogen Bonding (RAHB), π- π interactions between neighbouring benzene residues only being evident amongst the longer alkyl chain derivatives. The first structural characterization of an asymmetrically substituted N,N-dialkyl- N’-benzoylselenourea ligand reveals an increased stability of the Z isomer in the solid state, this being reflected by the sulfur analogue. Attempts to synthesise N,N-dicyclohexyl-N’-benzoylselenourea led to the isolation and structural characterization of a novel 1,3,5-oxaselenazine salt and dicyclohexylaminobenzoate. The first structural characterization of a “bipodal” N,N-dialkyl-N’-benzoylselenourea ligand, 3,3,3’,3’-tetrabutyl-1,1’- isophthaloylbis(selenourea), reveals RAHB in the crystal lattice similar to that exhibited by the “monopodal” analogue, N,N-dibutyl-N’-benzoylselenourea. The successful complexation of the N,N-dialkyl-N’-benzoyl(thio)selenourea ligands to a number of different transition metal ions is reported allowing the preparation of several potential single source precursors. Coordination through the O and Se/S donor atoms to Pd(II) results in the formation of square planar metal complexes, with a cis conformation, several of which could be structurally characterized. In particular, the first structural elucidation of an asymmetrically substituted N,N-dialkyl-N’-benzoylselenourea metal complex, cis-bis(N-benzyl-N-methyl-N’- benzoylselenoureato)palladium(II) indicates the increased stability of the EZ isomer in the solid state. Structural elucidation of the novel (N,N-diphenyl-N’-benzoylselenoureato)cadmium(II) reveals a bimetallic complex in the solid state, where the expected 2:1 ligand : metal ratio is maintained, and the two Cd(II) centres are 5 and 6 coordinated, with O and Se donor atoms. Multinuclear Nuclear Magnetic Resonance (NMR) Spectroscopy has been employed in the thorough characterisation of the potential single source precursors, 77Se NMR spectroscopy indicating a decreased shielding of the 77Se nucleus as the “hardness” of the central metal ion increases i.e. Pd(II) > Zn(II) > Cd(II). Use of 113Cd NMR spectroscopy indicates the preferential binding of N,N-diethyl-N’- benzoylselenourea to Cd(II) over that of its sulfur analogue, and initial studies suggest a form of chelate metathesis taking place in solution. 31P NMR spectroscopy is used to gain insight into the formation of cis-bis(N,N-diethyl-N’- benzoylselenoureato)Pt(II). Thermolysis of (N,N-diethyl-N’-benzoylselenoureato)cadmium(II) and its sulfur analogue led to the successful synthesis of CdSe and CdS quantum dots respectively, where thermolysis over a range of temperatures allows a degree of size control over the resulting nanoparticles. The effect of precursor alkyl chain length on nanoparticle morphology was investigated for both the N,N-dialkyl-N’-benzoylthio- and –selenoureas. A correlation between the two for the (N,N-dialkyl-N’-benzoylselenoureato)Cd(II) complexes is described and possible growth mechanisms are discussed. Preliminary investigations into the use of other N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes as single source precursors reveal that both (N,N-diethyl-N’-benzoylselenoureato)Zn(II) and its sulfur analogue show potential as single source precursors for the formation of ZnO and ZnS nanoparticles respectively. Initial studies into the use of N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes as single source precursors for the synthesis of core-shell nanoparticles is briefly described. The Aerosol Assisted Chemical Vapour Deposition (AACVD) of several N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes is reported, where both (N,N-diethyl-N’-benzoylselenoureato)Cd(II) and its sulfur analogue allow the deposition of crystalline CdSe and CdS respectively. The AACVD of (N,N-diethyl-N’- benzoylselenoureato)Zn(II) leads to the deposition of crystalline ZnSe, ZnS being deposited by (N,N-diethyl-N’-benzoylthioureato)Zn(II). The deposition of heazelwoodite (Ni3S2) with varying morphologies results from the AACVD of cis-bis(N,N-diethyl-N’-benzoylthioureato)Ni(II). Thermal annealing of the amorphous material deposited by the AACVD of cis-bis(N,N-diethyl-N’-benzoylthioureato)Pd(II), allows the formation of highly crystalline palladium. The deposition of metallic platinum using cis-bis(N,N-diethyl-N’-benzoylthioureato)Pt(II) is described as well as the deposition of crystalline Pd17Se15 from cis-bis(N,N-diethyl-N’-benzoylselenoureato)Pd(II). This, to the best of our knowledge, is the first time that AACVD has been performed, using the N,N-dialkyl-N’- benzoyl(thio)selenourea metal complexes as single source precursors, in addition, we believe it to be the first time that palladium selenide has been deposited using the AACVD technique.

A series of ruthenium complexes of the general type Ru(CO)2(P(n-Bu)3)2(O2CR)2 (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru3(CO)12 with P(n-Bu)3 and the respective carboxylic acid. The molecular structures of 4b, 4c and 4e–g in the solid state are discussed. All ruthenium complexes are stable against air and moisture and possess low melting points. The physical properties including the vapor pressure can be adjusted by modification of the carboxylate ligands. The chemical vapor deposition of ruthenium precursors 4a–f was carried out in a vertical cold-wall CVD reactor at substrate temperatures between 350 and 400 °C in a nitrogen atmosphere. These experiments show that all precursors are well suited for the deposition of phosphorus-doped ruthenium layers without addition of any reactive gas or an additional phosphorus source. In the films, phosphorus contents between 11 and 16 mol% were determined by XPS analysis. The obtained layers possess thicknesses between 25 and 65 nm and are highly conformal and dense as proven by SEM and AFM studies. / Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Hybrid organic-inorganic solar photovoltaic (PV) cells capable of directly converting sunlight to electricity have attracted much attention in recent years. Despite evident technological advancements in the PV industry, the widespread commercialisation of solar cells is still being mired by their low conversion efficiencies and high cost per Watt. Perovskites are an emerging class of semiconductors providing a low-cost alternative to silicon-based photovoltaic cells, which currently dominate the market. This thesis develops a series of studies on “all-solid state perovskite solar cells” fabricated via vapour deposition which is an industrially-accessible technique, to achieve planar heterojunction architectures and efficient PV devices. Chapter 2 presents a general outlook on the operating principles of solar cells, delving deeper into the specific operational mechanism of perovskite solar cells. It also explores the usual methods employed in the fabrication of perovskite thin films. Chapter 3 describes the experimental procedures followed during the fabrication of the individual components constituting the device from the synthesis of the precursors to the construction of the functioning perovskite PV devices. Chapter 4 demonstrates pioneering work involving the dual-source vapour deposition (DSVD) of planar heterojunction perovskite solar cells which generated remarkable power conversion efficiency values surpassing 15%. These significant results pave the way for the mass-production of perovskite PVs. To further expand the range of feasible vapour deposition techniques, a two-layer sequential vapour deposition (SVD) technique is explored in Chapter 5. This chapter focusses on identifying the factors affecting the fundamental properties of the vapour-deposited films. Findings provide an improved understanding of the effects of precursor compositions and annealing conditions on the films. Chapter 5 concludes with a comparison between SVD and DSVD fabricated films, highlighting the benefits of each vapour deposition technique. Furthermore, hysteretic effects are analysed in Chapter 6 for the perovskite PV devices fabricated based on different structural configurations. An interesting discovery involving the temporary functioning of compact layer-free perovskite PV devices suggests the presence of a built-in-field responsible for the hysteresis of the cells. The observations made in this chapter yield a new understanding of the functionality of individual cell layers. Combining the advantages of the optimum vapour deposition technique established in Chapter 4 and Chapter 5, with the enhanced understanding of perovskite PV cell operational mechanism acquired from Chapter 6, an ongoing study on an “all-perovskite” tandem solar cell is introduced in Chapter 7. This demonstration of the “all-perovskite” tandem devices confirms the versatility of perovskites for a broader range of PV applications.

The doping of rhenium into molybdenum disulfide was achieved by Aerosol Assisted Chemical Vapour Deposition (AACVD) from single source precursors. Rhenium can be studied as a model for immobilization of radioactive technetium-99 (99Tc) in MoS2. The metals Mo(IV), Re(IV), and Tc(IV) have similar ionic radii 0.65, 0.63 and 0.65 Å respectively, and their Shannon-Prewitt crystal radii 0.79, 0.77 and 0.79 Å Hence demonstrating the potential storage of nuclear waste in geologic like formations in of groundwater may be possible. The interaction between the nuclear waste forms and groundwater, which could lead to release and transport low concentrations or vapour of radionuclides to the near field, as a result, decomposition of engineered barriers. The molecular precursors [Mo(S2CNEt2)4], [Re3(μ-SiPr)3(SiPr)6], [Re(S2CC6H5)(S3CC6H5)2], and [Re2(μ-S)2(S2CNEt2)4] have been used to deposit Re-doped MoS2 thin films. Mo-doped ReS2 alloyed, polycrystalline thin films were synthesised using [Re(S2CC6H5)(S3CC6H5)2], [Mo(S2CNEt2)4] via AACVD, adding with a low concentration of Mo source for the first time . We reported as well a new way for production of ultrathin ReS2 nanosheets by coupling bottom up processing AACVD with top-down LPE. This is important in synthetic pathways for the production of rare transition dichalcogenide, also, our processing methodology is potentially scalable and thus could be a way to commercial exploitation. Characterisation of produced materials performed by pXRD, SEM, TEM, STEM, EDX, ICP and Raman spectroscopy.

This study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bond This study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bondThis study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bond at 695 cm-1 , which is not observed in the noncovalent functionalized nanocomposites

<p>In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions. </p><p>Studies on <i>in situ</i> ion insertion of lithium into thin TiO₂ systems were performed. The electronic and geometric properties are investigated in detail, along with an estimation of charge transfer from Li to Ti. </p><p>A detailed study of chemical vapour deposition of ZrO₂ on Si(100)-(2x1) was performed. ZrO₂ is found to be an insulator, i.e. its electronic levels are decoupled from the substrate and the Zr levels are best referenced to the local vacuum level. The alignment of the valence and conduction band has been determined. </p><p>Combinatorial chemical vapour deposition of TiO₂ and ZrO₂ on Si(100)-(2x1) was realized. A film with graded stoichiometry consisting of pure TiO₂ and ZrO₂ on the opposing ends and mixed composition of both oxides in the middle was obtained. A detailed study of the electronic levels revealed that ZrO₂ remains an insulator in the monolayer regime and that modification of ZrO₂ with a small amount of TiO₂ leads to a more symmetric alignment of the bands relative to Si. </p><p>The influence of a core hole on the O 1s x-ray absorption spectrum in TiO₂ and ZrO₂ is elucidated. Supported by O 1s photoemission measurements and <i>ab initio</i> calculations it is concluded that the static final state picture as well as dynamical threshold effects must be considered in order to determine the location of the conduction band minimum within the XAS framework. </p><p>Finally a Co modified Co:ZnO film was shown to display ferromagnetic properties. It could be evidenced that Co with oxygen as nearest neighbours was responsible for the magnetism and not metallic Co.</p>