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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Schaltungsbezogene Modellierung der Ausbeute und des Ausfallrisikos mikroelektronischer Schaltkreise unter Berücksichtigung defektinduzierter Ausfallmechanismen

Miskowiec, Peter. January 2000 (has links) (PDF)
Duisburg, Universiẗat, Diss., 2000.

Neuronale Netzwerkmodelle zur Analyse hochdimensionaler, multisensorischer Datensätze prozessierter Si-Wafer

Schels, Armin. January 2001 (has links) (PDF)
Regensburg, Universiẗat, Diss., 2001.

Halbleiterwaferbondverbindungen mittels strukturierter Glaszwischenschichten zur Verkapselung oberflächenmikromechanischer Sensoren auf Waferebene

Knechtel, Roy. January 2005 (has links) (PDF)
Zugl.: Chemnitz, Techn. Universiẗat, Diss., 2005.

Effects of Applied Loads, Effective Contact Area and Surface Roughness on the Dicing Yield of 3D Cu Bonded Interconnects

Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Thompson, Carl V., Li, Hongyu 01 1900 (has links)
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and modeling results indicate that the effective contact area is directly proportional to the applied load. Furthermore, for first time, results have been obtained that indicate that the dicing yield is proportional to the measured bond strength, and the bond strength is proportional to the effective contact area. It is also shown that films with rougher surfaces (and corresponding lower effective bonding areas) have lower bond strengths and dicing yields. A quantitative model for the relationship between measured surface roughness and the corresponding dicing yield has been developed. An appropriate surface-roughness data acquisition methodology has also been developed. The maximum possible applied load and the minimum possible surface roughness are required to obtain the maximum effective contact area, and hence to achieve optimum yields (both mechanically and electrically). / Singapore-MIT Alliance (SMA)

Programming of Microcontroller and/or FPGA for Wafer-Level Applications - Display Control, Simple Stereo Processing, Simple Image Recognition

Pakalapati, Himani Raj January 2013 (has links)
In this work the usage of a WLC (Wafer Level Camera) for ensuring road safety has been presented. A prototype of a WLC along with the Aptina MT9M114 stereoboard has been used for this project. The basic idea is to observe the movements of the driver. By doing so an understanding of whether the driver is concentrating on the road can be achieved. For this project the display of the required scene is captured with a wafer-level camera pair. Using the image pairs stereo processing is performed to obtain the real depth of the objects in the scene. Image recognition is used to separate the object from the background. This ultimately leads to just concentrating on the object which in the present context is the driver.

Wafer-Level Thermocompression Bonds

Tsau, Christine H., Schmidt, Martin A., Spearing, S. Mark 01 1900 (has links)
Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile layer influences the fracture behavior of the bonds. The fabrication process was described. In addition, the effect of plasticity was explored by varying the gold bonding thickness between 0.23 to 1.4 µm. Wafers were bonded at 300°C and two different pressures: 1.25 and 7 MPa. The bond toughness of the specimens were characterized using a four-point bend delamination technique. Cohesive failure was found to be the dominant fracture mode in the thicker films. Bonds made with thin gold films failed adhesively and at lower strain energy release rates. / Singapore-MIT Alliance (SMA)

Gold Thermocompression Wafer Bonding

Spearing, S. Mark, Tsau, Christine H., Schmidt, Martin A. 01 1900 (has links)
Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, electrically conductive bond. This paper documents work conducted to model the effect of patterning in causing pressure non-uniformities across the wafer and its effect on the subsequent fracture response. A finite element model was created that revealed pattern-dependent local pressure variations of more than a factor of three. This variation is consistent with experimental observations of bond quality across individual wafers A cohesive zone model was used to investigate the resulting effect of non-uniform bond quality on the fracture behavior. A good, qualitative agreement was obtained with experimental observations of the load-displacement response of bonds in fracture tests. / Singapore-MIT Alliance (SMA)

Studies on grinding characteristics of silicon wafer thinning process

Lin, I-Hsuan 23 August 2006 (has links)
The usual way to remove the silicon layer is used by the solutions of HF and KOH to conduct the etching process, but those chemicals are dangerous for the humans. Therefore, this study proposes the method that uses the diamond millstone to reduce the thickness of the silicon wafer. It hopes that this method can effectively shorten the process time and reduce the amount of chemical pollution. Firstly, the effects of the working pressure, the rotating speed of the wafer, and the diamond millstone on the removing rate of silicon wafer are investigated. Then, the effect of the working pressure on the flatness of the wafer surface is investigated. Finally, the effect of the rotating speed ratio of the wafer to the diamond millstone on the track type of grinding surface is theoretically analyzed. According to the experimental results, the removing rate of silicon wafer is almost linearly proportional to the working pressure, the rotating speed of the wafer, and the diamond millstone. The lighter working pressure, the more flatness of the wafer is. According to the theoretical results, the rotating speed ratio of the wafer to the diamond millstone influences the track type of grinding surface. When this rotating speed ratio is an irrational number, the distribution of grinding track becomes finer.

Research and Development of Ultraprecision Polisher with Continuous Composite Electroplated Polishing Disc and Polishing Characteristics of Silicon Wafer

Yao, Chang-Li 08 July 2002 (has links)
ABSTRACT The polishing stocks used in various ultra-precision polishing machines consist of abrasives, polishing disk (pad), and polishing fluids. They are expendable goods. To ensure the machining ability and the repeat accuracy of machining characteristics, the polishing disc (pad) must use the dressing mechanism to produce sharp new grains. As a result, the grinding surface on the abrasive wheel becomes thinner gradually, then losses it¡¦s machining ability, and finally must be changed. Hence, in this project, an idea of an ultra-precision abrasive machining is proposed by using the continuous composite electroplating on the polishing disc. In this idea, the machining ability of Cu polishing disc can be ensured due to the use of the continuous Sn-Al2O3 composite electroplating. Hence, it can save the cost of the ultra-precision machining using in the semiconductor wafer. In this study, after 60 minutes continuous composite electroplated polishing, the thickness of the composite coating on the surface of Cu polishing disc can increase 6.13£gm. It means the surface of disc can be grew and renewed at every moment. The removal amount of the wafer is 10.8£gm. The surface of wafer was Ra=0.5453£gm and Rmax=5.464£gm at the start ,but came to Ra=0.0019£gm and Planess=2.649£gm/36mm after 60 minutes polishing.

Study on the Polishing Characteristics of Silicon Wafer for New Type Ultraprecision Polisher

Huang, Wei-Hang 25 July 2003 (has links)
In conventional abrasive machining , it must using dresser to dress the surface of polishing disc periodically , in order for polishing disc to maintain its ability of machining , and then ensuring the quality of work piece. It will make polishing disk thin , finally it must losing it ability of machining , and then be replaced by a new disc. For this reason , in the study , an idea of a new type ultraprecision polisher is proposed . Using Sn-Al2O3 composite coating to reach the mirror surface grinding of silicon wafer in the tin bath , and grinding with electroplating continuously . It will ensure the ability of machining of polishing disc . In the study , first , analyzing the effect of rotational speed rate of wafer and polishing disc on the grinding trajectories type of machining surface . From the result of analysis , find that , when the rotational speed rate is more irregular or it could not divided , the arrangement of grinding trajectories is more complex . And then , investigating the effect of cathode current density , rotational speed of polishing disc and time of plating on the characteristics of composite coating . In the experiment of composite electroplating , when cathode current density is higher , the size of crystal is smaller , the thickness of coating is thicker , and the quantity of Al2O3 within coating decrease lightly . The increase of the rotational speed of polishing disk could increase the size of crystal , the thickness of coating and the quantity of Al2O3 lightly . The time of plating is longer , the shape of crystal is more obvious , the thickness of coating is thicker and it also increase the quantity of Al2O3 . Finally , investigating the effect of cathode current density and cationic surfactant PEI on the characteristics of coating and wafer . In practical abrasive machining , the removal rate of wafer increases with cathode current density , and the addition of PEI could increase the quantity of Al2O3 indeed . Besides , under the same machining condition , in the tin bath with PEI , the removal rate is higher than the one in the tin bath without PEI .

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