Dielectric waveguides are important passive devices in optical communication systems. Circular-core fibers with slight ellipticity may lead to polarization-mode dispersion. A clear understanding of the propagation characteristics of the elliptical fibers thus becomes important for theoretical as well as practical purposes. Although mesh-dependent methods such as the finite-element method or finite-difference method, can be used to study such a complex structure, its computational task is very high. Strictly speaking, mesh-based solution does satisfy the Helmholtz equation and the solution only provided four to five significant digits. On the other hand, the highly accurate solution based on solving the Helmholtz equation of the elliptical coordinate system spend most its computational resources on computing the functional value and the zeros of the modified Mathieu functions of the first kind. Our method is based on linear combination of the exact mode-field solutions of the dielectric optical fiber. We apply the analytical continuity principle to obtain the simultaneous equation of the expansion coefficient vector. Since each basis solution satisfies the Helmholtz equation exactly, the overall solutions are very accurate and provide more than six significant digits for fibers with small elliptical eccentricity. In addition, only the Bessel functions are needed in our computation. Using cylindrical coordinate and symmetry, together with ACM principle, we simplify the problem of modal analysis of dielectric elliptical waveguides. This method also can be applied to some regular polygonal dielectric waveguides such as the large area VCESL.

The purpose of this paper is to fabricate optical waveguide reflectors to reflect the incident optical mode of multi-mode interference coupler by the etched vertical mirror surfaces. We used the design of etched vertical mirror surfaces to bend the incident optical mode, and changed the length of multi-mode interference coupler for the power splitting ratio. By the simulation and design, we could use the multi-mode interference coupler to fabricate optical waveguide reflectors. A 1.52µm symmetric quantum well InGaAlAs/InGaAs epitaxial wafer is used to fabricate the devices. In the device design, we designed a optical waveguide reflector of two inputs and outputs with 90¢X angle. We fabricated a Fabry-Perot laser by two optical waveguide reflectors with 90¢X angle, a 1x2 multi-mode interference coupler and a ring cavity. In addition, we designed optical waveguide reflectors of one input and two inputs, and utilized them to fabricate a Fabry-Perot laser. We also utilized an optical waveguide reflector of one input or two inputs directly to fabricate Fabry-Perot lasers. In fabrication process, firstly, we etched the waveguide to the depth of about 1.81µm by multi-step wet etching. In order to reduce bending loss, we made deep etching for the outside of curve waveguide. Then, we etched the mirror to the depth of about 6µm by multi-step wet etching to have a greater variation of refractive index to reflect the mode of optical waveguide reflectors. Finally, we used polyimide to flatten the sides of the ridge waveguides and evaporated metal pad over the polyimide.

The purpose of this thesis is to design and fabricate optical waveguide reflectors by the etched vertical mirror surfaces. In order to reflect the incident optical mode of multi-mode interference coupler, we fabricate the etched vertical reflective mirror surface with wet etch and dry etch processes. We used the design of etched vertical mirror surfaces to bend the incident optical mode, and changed the length of multi-mode interference coupler for the power splitting ratio and high power output. In order to reduce bending and transition losses and make the incident optical mode total internal reflection in the etched vertical mirror surfaces, we used ICP-RIE dry etch process to add the depth about 4 µm of the etched vertical mirror surfaces. A 1.52 µm symmetric multiple quantum well InGaAlAs/InGaAs epitaxial wafer is used to fabricate the devices. In the device design, we designed optical waveguide reflectors of one input and two inputs respectively, and utilized them to fabricate Fabry-Perot lasers. We also utilized a reflector of one input and two inputs directly to fabricate a Fabry-Perot laser. In addition, We fabricated a Fabry-Perot laser by two reflectors with 90¢X angle corner, a 1x2 3dB multi-mode interference coupler and a ring resonator. In fabrication process, firstly, we etched the epitaxial wafer the depth of about 1.79µm by multi-step wet etch to form waveguides. In order to reduce bending loss, we made deep etching for the outside of curve waveguides and optical waveguide reflectors. Then, we etched the reflective mirror to the depth of about 4µm by ICP-RIE dry etch process to have a greater variation of refractive index to reflect the optical mode of reflectors. Finally, we used polyimide to flatten the sides of the ridge waveguides and evaporated metal pad over the ridge waveguides to form the signal pad.

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Abstract We use InGaAlAs and InGaAsP as materials of 1.55mm multi-quantum-well spot-size converter ridge waveguide lasers. On lateral conversion, we fabricate a taper ridge waveguide. On vertical conversion, we add guard layers on each side of active layer. For InGaAlAs ridge waveguide lasers, simulation results show a far field 16o ¡Ñ 27o¡]lateral ¡Ñ vertical¡^at guard layer width S = 0.1 mm with 300-150-50 mm narrow-tapered waveguide structure. Due to large Zn background contamination in the MOCVD growth chamber, we did not fabricate the InGaAlAs lasers successfully. For the InGaAsP ridge waveguide lasers, we measure a far field 18o ¡Ñ 28o and a threshold current 23 mA for the 200-250-50 mm narrow-tapered waveguide structure; a far field 20o ¡Ñ 26o and a threshold current 22 mA for the 200-250-50 mm wide-tapered waveguide structure.

A Y-branch optical power splitter based on the buried waveguide and the micro-prism waveguide bends is presented. The 132 splitter consists of a beam expanding region, a conventional Y-branch region, and two micro prisms providing large angle waveguide bends of device. The 132 splitter are fabricated by first depositing a 10-£gm-thick PECVD oxide (SiO2) on Si s ubstrates. The guiding core of the device was fabricated by etching trenches in SiO2 cladding, and filled with Benzocyclobutene (BCB) polymer. After etch-back process, the thin layer of spin on glass (SOG) is used to further planarized the surface of the device. The propagation loss of the waveguide is 0.47dB/cm at £f=1.3£gm. The normalized power transmission efficiency of the 132 splitter as large as 3.7dB was obtained. Simulation results based on beam propagation method (BPM) of the splitter is also presented.

Ultra Wide Band (UWB) is a short-pulse electrical signal, which is widely used for short distant wireless communication due to its low path loss, good immunity to multipath propagation, and high data rate. The main target transmission area of UWB is within 10 meters. Using optical fiber as carrier can bust up the communication capacitance in long distance range because of high capacitance, low loss propagation, and TDM and WDM compatible properties of fiber. Thereby, the technique of UWB on fiber has become more and more important. In this work, a novel method using waveguide photodetector (WP) with short termination for interface of optical fiber and wireless is proposed and demonstrated. The structure is simple without employing any complicated frequency mixer, intermediate frequency, or complex systems. This work is divided into two parts: (1) generation of UWB electrical signals and (2) wavelength conversion of UWB through WP. In the former, a WP with short termination is used in the device. The photocurrent excited by short optical pulse is distributive generated through the waveguide, forming two opposite directions of electrical waves. By reflection on the short termination, the reversed phase of one electrical wave is added to another electrical wave through a delay line, forming a monocycle of UWB signal. By appropriate design on the length of waveguide, the band of 2-10GH is demonstrated, fitting the requirement of FCC (Federal Communications Commission). In the second part of this paper is the wavelength conversion of UWB. The active region of WG is multiple quantum wells (M.Q.W.), which is not only served as photo-absorption layer, but also can be used the electroabsorption material. By pumping M.Q.W.s with high optical power, the cross absorption properties can be applied for wavelength conversion. By pumping power of 12dBm, the wavelength-converted UWB signal is successfully demonstrated at range of 1545nm-1570nm. Using this method, the application of UWB on router of fiber optical network is expectable.

Ambient noise generated by surface random processes is the primary contribution to the noise-field energy in the intermediate frequency band, and thus is important in many applications of underwater sound. In this study, the noise field is analyzed with respect to the effects of random source spectrum, waveguide structure of the water column, and seabed stratifica¬tion upon the noise-field intensity as well as spatial correlation. Based upon a noise-generation model due to continuous random sources, incorporating several analytical models for seabed stratification, a formulation may then be derived to facilitate the numerical implementation. Many results shall be generated and analyzed. In this study considers the noise field generated by wave in an oceanic environment with a sediment layer possessing a constant density and sound-speed profile. This model closely resembles the oceanic waveguide environment and therefore enables the simulation of surface noise generation. Many results of the noise field were generated, in¬cluding the noise intensity distribution, vertical and horizontal correlations. It is demonstrated that the noise intensity may be affected by the strat¬ification mainly through the continuous spectrum, in that the continuous spectrum is equally important as the normal modes in the present analysis. Moreover, the results for the correlations show that the noise field in the horizontal direction becomes more coherent when the noise sources are more correlated, while in the vertical direction, the results tend to reverse. The horizontal correlations of the noise field due to surface random sources with non-isotropic power spectrum, such as non-isotropic Gaussian and, were generated and analyzed.

In this work, a novel type of optical waveguide, namely two-step undercut-etching Si waveguide (TSUESW), fabricated in Si-substrate is proposed and demonstrated. All this waveguide processing is based on two step of SF6-based dry etching method. In the first step, an anisotropic etching by Reactive Ion Etching (RIE) is used to define the waveguide core. After that, an undercut etching through an isotropic etching processing Electron Cyclotron Resonance (ECR) is then utilized to decouple the optical light of the waveguide core from Si substrate. In the measurement setup, an optical propagation loss coefficient of 2.89dB/cm is obtained by extracting from Fabry-Perot oscillation, suggesting the confined optical mode in TSUESW can be realized. A tapered optical waveguide is also designed and fabricated, where the core of tapered structure is defined as widths of from 20£gm to 6£gm for optical fiber coupler. A 4.13dB/cm of loss from 700£gm long waveguide is found in such tapered waveguide. Through the nonlinear properties of Si material, a Four-Wave Mixing (FWM) behavior is observed in tapered waveguide, further confirming the optical power can be highly confined in small core of TSUESW. It also should be noted that the waveguide technology template can be processed in a Si-substrate to realize CMOS-compatible processing, avoiding high-cost Silicon-On-Insulator (SOI) technology.

Multiple dielectric crossing waveguides are indispensable in building a complex optical integrated circuit. Since each input/output waveguide will have many crossings, it is important to design a low-loss waveguide crossing to ensure the overall radiation loss is kept at a minimum. The beam propagation method (BPM) is usually the method of choice for modeling large but low-index-contrast waveguide devices. BPM assumes one-way propagation and adopts the paraxial approximation. It is neither able to consider reflection of electromagnetic (EM) fields nor to perform wide angle propagation of forward fields. Therefore, it can not be used to analyze perpendicular dielectric crossing waveguides. At a maximum 0.5 dB power loss per crossing, the difficulty of simulation a waveguide crossing is how to compute the complex coupling waves with high enough precision. In this thesis, two-dimensional planar integrated optical waveguide crossing is studied in detail for the through and cross power coupling coefficients with the finite-difference frequency-domain (FD-FD) method. By exploiting the dual symmetries: the ¡§+¡¨ symmetry and the ¡§X¡¨ symmetry in the perpendicular crossing waveguide, we are able to compute the EM fields and their power coefficients without using artificial absorbing boundary conditions (ABC) nor using the perfectly matching layer (PML). We develop the layer-mode based transparent boundary condition (LM-TBC) [1] for launching the fundamental incident mode as well as transmitting the reflected and scattered wave fields off the crossing area. Numerical results including the field distribution, power coefficients are carefully verified and the convergent comparisons are also studied in the thesis.