Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Ocean Engineering. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Bibliography: leaves 239-242. / Ph.D.

Neste trabalho investigamos a estrutura eletrônica de fios quânticos formados por distribuição de carga espacial, obtidos a partir da incorporação de dopantes nos degraus que delimitam planos vicinais em semicondutores. Estudos experimentais recentes, que combinam o crescimento epitaxial em planos vicinais (terraços) sobre o GaAs com as técnica de dopagem planar abrupta, sugerem que a incorporação do dopante (Silício) ocorre preferencialmente ao longo das linhas que delimitam os planos vicinais deste semicondutor. Baseados em resultados teóricos recentes, que sugerem que a aproximação semiclássica de Thomas-Fermi é capaz de reproduzir o potencial auto-consciente de sistemas eletrônicos criados a partir de distribuições de carga de origem puramente espacial, vários efeitos tais como: difusão de dopantes, temperatura finita e densidade residual de aceitadores puderam ser investigados neste nível de aproximação. As equações de Kohn-Sham na aproximação de densidade local (T=0K) foram também empregadas com o propósito de avaliar-se a possível influência de efeitos de não localidade do funcional energia cinética e efeitos de muitos corpos (troca e correlação) que foram ignorados pela abordagem semiclássica. / In this work we investigate the electronic structure of space-charge quantum wires obtained via attachment of donors in misorientation steps of semiconductor vicinal surfaces. Recent experimental studies, combining epitaxial growth on GaAs (100) vicinal surfaces (terraces) with the ?-doping technique, suggests that the incorporation of Silicon donors is preferential along the lines that delimit the vicinal terraces in this semiconductor. Based on recent theoretical results suggesting that the Thomas-Fermi is a reliable approximation for the self-consistent potential fo space-charge layers, we have employed this approximation to study the possible influence of various factors such as diffusion of dopants, finite temperature and residual density of acceptors on the electronic structure of these wires. The Kohn-Sham equations, within the local density approximation (T=0K), were also solved as the propose of evaluating the influence of effects due to the non-locality of the kinectic energy densities functional and many body effects (exchange and correlation) that were ignored in the semiclassical approximation.

Nos tratamentos ortodônticos, fios de diferentes ligas metálicas são utilizados nas etapas de alinhamento, nivelamento, correção da posição molar, fechamento espacial, acabamento e retenção. Com relação às duas últimas, responsáveis pelo posicionamento adequado dos dentes superiores sobre os inferiores, a preparação requer um fio que favoreça o torque de incisão, ou seja, que apresente grande resistência e rigidez associadas à ativação de pequeno alcance. Para este fim, os fios de aços inoxidáveis austeníticos retangulares são os preferidos em razão do módulo de elasticidade elevado e boa resistência à corrosão no meio bucal. Quanto à geometria retangular, o processo de fabricação requer desenvolvimento tecnológico adequado para a produção em escala industrial de fios com as características geométricas e propriedades mecânicas para melhor adequação às necessidades de uso. Com o objetivo de se produzir fios com tais características, foi desenvolvido um laminador para a fabricação de fios retangulares com a intuito de se dispor de uma alternativa de menor custo ao processo de produção por trefilação, de custo elevado, devido a complexidade das matrizes. Além da fabricação do laminador, foram avaliados os aspectos tecnológicos que envolveram os efeitos da deformação nas propriedades mecânicas dos fios, por meio de medidas de microdurezas e ensaios em tração e de flexão. Nos testes realizados, os fios apresentaram geometria, acabamento superficial e propriedades mecânicas adequadas à sua utilização em tratamentos ortodônticos. / In orthodontic treatments, wires of different metallic alloys are used for alignment, leveling, correction of the molar position, space closing, finish and retention. With respect to finish and retention, these wires are responsible for adequate positioning of the upper teeth on the lower teeth. Wires that are subjected to incisor torque require high resistance and stiffness. For this, wires of rectangular austenitic stainless steel are used due to high modulus of elasticity and good corrosion resistance in the oral environment. Because of the rectangular geometry, wire production requires process development suitable for industrial scale manufacture with geometric characteristics and mechanical properties better adapted to the use conditions. To obtain wires with such characteristics, a rolling mill was developed for the production of rectangular wires by a rolling process with the objective of reducing cost of the cold drawing process that is currently used, which utilize complex and expensive wiredrawing dies. In addition to the rolling process itself, wire deformation, microhardness, tension and bend tests were also performed. In these tests, wire geometry, surface finish and mechanical properties were successfully adapted for use in orthodontic treatments.

No description available.

Synthetic diamond thin films have potential for fabricating high-temperature semiconducting and optical devices because of its extraordinary properties. In this work, a microwave plasma chemical vapor deposition system has been setup. A two-steps deposition process will be applied for the growth of boron-doped diamond on silicon and on porous silicon. The effects of temperature, microwave power and of doping concentration of B2O3 have been studied by varying the growth parameters. The doping source of B2O3 solved in C2H5OH is applied with carrying gas of Ar. To vary the concentration of boron with the flow of Ar is controlled mixing into a reaction gas of CH4 and H2 mixture. Polycrystalline diamond thin films are examined by Raman, XRD and FTIR. In the SEM photograph a nano-wires structure has been found for higher doping of B2O3. A higher temperature the growth rate of the boron-doped diamond films will increase and the shape of crystallites will tend to polycrystalline. The diamond growth is in multi steps and the mechanism of deposition will change when the boron-doped diamond film grows up to a critical thickness. In this work a smooth diamond film was successfully grown on porous silicon without the step of nucleation.

Thesis (M.S.)--West Virginia University, 2002. / Title from document title page. Document formatted into pages; contains x, 101 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 90-100).

Thesis (M.S.)--West Virginia University, 2004. / Title from document title page. Document formatted into pages; contains x, 82 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 80-81).

Palladium is one of the most common and versatile transition metals used in modern organometallic chemistry. The chemistry of palladium in its 0, +II, and +IV oxidation states is well-known; by comparison, the chemistry of palladium in its +III oxidation state is in its infancy. The work in this thesis involves the study of previously unknown Pd(III) complexes, including applications in materials chemistry and catalysis. / Chemistry and Chemical Biology

Thesis (M.S.)--University of Alabama at Birmingham, 2007. / Title from first page of PDF file (viewed on June 26, 2009). Includes bibliographical references.

Thesis (M.S.)--University of Michigan, 1973.