El gran impacto de la tecnología FBAR tanto en sistemas de radio frecuencia como más recientemente en sensores han motivado el desarrollo de aplicaciones integradas. Esto implica que los procesos de fabricación deberían lograr producir dispositivos resonadores con un alto factor de calidad, al tiempo que permitir la integración de los FBAR con tecnologías CMOS estándar. De tal manera, esta tesis doctoral aborda dichos requerimientos, contribuyendo con el diseño, fabricación y caracterización de resonadores FBAR; su integración con tecnologías CMOS estándar; y su aplicación a sistemas de sensores. El desarrollo de la tecnología de fabricación de los FBAR ha involucrado la puesta a punto de las técnicas de depósito y micro-mecanización de la estructura en capas del resonador, la cual está comprendida por una película de material acústico hecha de nitruro de aluminio (AlN). Se realizaron diversas pruebas para analizar la calidad del AlN depositado. También se probaron y pusieron a punto diferentes tecnologías de micro¬mecanización para liberar la estructura del FBAR, destacando entre ellas la técnica de ataque en seco por la cara de componentes, dados los altos factores de calidad obtenidos (superiores a 2.000 a 2,4 GHz). Sobre los dispositivos fabricados se realizaron caracterizaciones estructurales, modelos utilizando análisis de elementos finitos y la extracción de parámetros de circuito equivalente. Una variación del proceso que involucraba el diseño, modelado y fabricación de un dispositivo FBAR con compensación de temperatura fue igualmente desarrollada. En este ámbito vale la pena resaltar la concepción y realización de una novedosa técnica post-fabricación para el ajuste fino de la frecuencia de resonancia de los FBAR por medio de un haz de iones focalizados (FIB). Basado en la tecnología arriba mencionada, se desarrolló un método de integración heterogénea a nivel de oblea de los dispositivos FBAR en sustratos CMOS estándar. De acuerdo con este método, se logró fabricar por primera vez dispositivos FBAR flotando sobre sustratos CMOS estándar. Este método ha sido exitosamente demostrado por medio de la integración de los FBAR tanto con la tecnología comercial AMS035 como con la CNM25, desarrollada en el CNM-IMB (CSIC). En el terreno de las aplicaciones, se diseñaron y realizaron diferentes aplicaciones de sensores basadas en FBAR, siendo el detector de masas localizadas la más relevante de entre ellas. Es de anotar que esta aplicación fue demostrada por primera vez utilizando FBARs de alta frecuencia como elemento sensor. De tal forma, se contrastaron los resultados experimentales y de modelado del sensor. Por otra parte, se presenta también el concepto de sensores mecánicos basados en FBAR. Para ello se han desarrollado dos ejemplos: el acelerómetro basado en FBAR y el sensor de fuerza para aplicaciones de puntas de AFM. Se reporta también en esta tesis la fabricación y caracterización de un nuevo tipo de resonadores acústicos de AlN sin contacto entre electrodos. / The high impact of FBAR on radio-frequency and, most recently, on sensing systems has motivated the development of integrated applications. This means that the fabrication process should succeed in producing high-quality-factor resonators and, at the same time, in integrating FBARs with standard CMOS technologies. Hence, this Ph.D. thesis addresses these requirements by contributing with the design, fabrication and characterization of thin-film bulk acoustic wave resonators (FBAR); their integration with standard complementary-metal-oxide-semiconductor (CMOS) technologies; and their application to sensing systems. The development of the FBAR's fabrication technology has involved the set up of the deposition and micromachining techniques of the layered structure of the resonator, which comprises an acoustic layer made of aluminum nitride (AlN). Several tests on the deposition and characterization of the AlN quality were carried out. Also, different micro-machining technologies for FBAR releasing were tested, the front-side micro-machining technique having obtained the best quality-factor results (over 2,000 at 2.4 GHz). Structural and device experimental characterization; and equivalent-circuit parameter and finite-element modeling of the FBAR were carried out. A process variation involving the design, modeling and fabrication of a temperature-compensated (TC) FBAR device was also implemented. Another remarkable result is the implementation of a post-fabrication, focused-ion-beam assisted technique for tuning of the resonance frequency of the FBAR. Based on the foregoing-mentioned FBAR technology, a method for performing wafer-level heterogeneous integration of the FBAR with a CMOS substrate was developed. According to this method, the fabrication of a floating FBAR above standard CMOS substrates has been achieved for the first time. The method was demonstrated by integrating FBARs on the commercial AMS035 and the in-house CNM25 CMOS technologies. On the application side, different FBAR-based sensor applications were implemented, the localized-mass detector being the most relevant, which has been demonstrated for the first time for high-frequency bulk-acoustic resonators. Experimental and modeling results have been contrasted. Also, the concept of FBAR-based mechanical sensor has been introduced. Two examples are the embedded-FBAR accelerometer and the force sensor for AFM-cantilever applications. The fabrication and characterization results of an AlN-based contactless acoustic resonator are also reported in this thesis.

Ces travaux de thèse portent sur la conception et sur la caractérisation expérimentale de résonateurs opto-phononiques. Ces structures permettent le confinement simultané de modes optiques et de vibrations mécaniques de très haute fréquence (plusieurs dizaines jusqu’à plusieurs centaines de GHz). Cette étude a été effectuée sur des systèmes multicouches à l’échelle nanométrique, fabriqués à partir de matériaux semiconducteurs de type III-V. Ces derniers ont été caractérisés par des mesures de spectroscopie Raman de haute résolution. Grâce aux méthodes expérimentales et aux outils numériques développés, nous avons pu explorer de nouvelles stratégies de confinement pour des phonons acoustiques au sein de super-réseaux nanophononiques, à des fréquences de résonance de l’ordre de 350 GHz. En particulier, nous avons étudié les propriétés acoustiques de deux types de résonateurs planaires. Le premier est basé sur la modification adiabatique du diagramme de bande d’un cristal phononique unidimensionnel. Dans le deuxième système, nous utilisons les invariants topologiques caractérisant ces structures périodiques, afin de créer un état d’interface entre deux miroirs de Bragg phononiques. Nous nous sommes ensuite intéressés à l’étude de cavités opto-phononiques permettant le confinement tridimensionnel de la lumière et de vibrations mécaniques de haute fréquence. Nous avons mesuré par spectroscopie Raman les propriétés acoustiques de résonateurs phononiques planaires placés à l’intérieur de cavités optiques tridimensionnelles, de type micropiliers. Enfin, la dernière partie de cette thèse porte sur l’étude théorique des propriétés optomécaniques de micropiliers GaAs/AlAs. Nous avons effectué des simulations numériques par éléments finis, nous permettant d’expliquer les mécanismes de confinement tridimensionnel de modes acoustiques et optiques dans ces systèmes, et de calculer les principaux paramètres optomécaniques. Les résultats de cette étude démontrent que les micropilier GaAs/AlAs possèdent des caractéristiques prometteuses pour de futures expériences en optomécanique, telles que des fréquences de résonance acoustiques très élevées, de hauts facteurs de qualités mécaniques et optiques à température ambiante, ou encore de fortes valeurs pour les facteurs de couplage optomécaniques et pour le produit Q • f / The work carried out in this thesis addresses the conception and the experimental characterization of opto-phononic resonators. These structures enable the confinement of optical modes and mechanical vibrations at very high frequencies (from few tens up to few hundreds of GHz). This study has been carried out on multilayered nanometric systems, fabricated from III-V semiconductor materials. These nanophononic platforms have been characterized through high resolution Raman scattering measurements. The experimental methods and the numerical tools that we have developed in this thesis have allowed us to explore novel confinement strategies for acoustic phonons in acoustic superlattices, with resonance frequencies around 350 GHz. In particular, we have studied the acoustic properties of two nanophononic resonators. The first acoustic cavity proposed in this manuscript enables the confinement of mechanical vibrations by adiabatically changing the acoustic band-diagram of a one-dimensional phononic crystal. In the second system, we take advantage of the topological invariants characterizing one dimensional periodic structures, in order to create an interface state between two phononic distributed Bragg reflectors. We have then focused on the study of opto-phononic cavities allowing the simultaneous confinement of light and of high frequency mechanical vibrations. We have measured, by Raman scattering spectroscopy, the acoustic properties of planar nanophononic structures embedded in three-dimensional micropillar optical resonators. Finally, in the last sections of this manuscript, we investigate the optomechanical properties of GaAs/AlAs micropillar cavities. We have performed numerical simulations through the finite element method that allowed us to explain the three-dimensional confinement mechanisms of optical and mechanical modes in these systems, and to calculate the main optomechanical parameters. This work shows that GaAs/AlAs micropillars present very interesting properties for future optomechanical experiments, such as very high mechanical resonance frequencies, large optical and mechanical quality factors at room temperature, and high values for the vacuum optomechanical coupling factors and for the Q • f products

Construímos um arranjo experimental para o estudo de ressonadores acústicos, que tem sido considerados como análogos clássicos de bilhares quânticos. O equipamento mantém estabilidade durante vários dias, o que é uma condição necessária para a obtenção de espectros de autofreqüências com a resolução requerida para a caracterização precisa destes sistemas. Caracterizamos 7 amostras, que são placas de alumínio com espessura < 2 mm e que possuem as seguintes geometrias: dois estádios de Sinai, com e sem dessimetrização planar; três triângulos sendo um equilátero, um retângulo e outro escaleno, este com todos os ângulos agudos e irracionais em unidades de ; além de duas amostras circulares, com e sem dessimetrização planar. Observamos que três amostras apresentam estatísticas GOE, uma 2GOE, uma semi-Poisson, uma Poisson com perda de níveis, e outra aparentemente intermediária entre a GOE e a 2GOE, que nao foi possível classificar. A qualidade dos dados também permitiu a obtenção das energias dos espectros, onde obtivemos resultados coerentes com a classificação a / We have built an experimental apparatus to study acoustic resonators which have been considered as classical analogs of quantum billiards. The equipment was able to keep the stability during several days, which is a requirement to the precise eigenfrequency measurements allowing a characterization of the systems. We have characterized 7 samples made of aluminum plates with thickness smaller than 2 mm having the following geometries: two Sinai\'s stadiums (with and without planar symmetry), an equilateral triangle, a rectangle triangle, and a scalene triangle with three acute and irrational angles, and two circular shaped samples, with and without planar symmetry. We observed that three of the samples followed the GOE statistics (the asymmetrical Sinai stadium, the rectangle triangle and the scalene one). The asymmetrical Sinai stadium was described by 2GOE statistics, the equilateral triangle by the semi-Poisson, the symmetrical circle by a Poisson with missing levels and the asymmetrical circle has statistics apparently between 1GOE and 2GOE which was not possible to classify. The high quality of data allowed us to calculate the spectra energies and we found these results compatible with the previous one.

Construímos um arranjo experimental para o estudo de ressonadores acústicos, que tem sido considerados como análogos clássicos de bilhares quânticos. O equipamento mantém estabilidade durante vários dias, o que é uma condição necessária para a obtenção de espectros de autofreqüências com a resolução requerida para a caracterização precisa destes sistemas. Caracterizamos 7 amostras, que são placas de alumínio com espessura < 2 mm e que possuem as seguintes geometrias: dois estádios de Sinai, com e sem dessimetrização planar; três triângulos sendo um equilátero, um retângulo e outro escaleno, este com todos os ângulos agudos e irracionais em unidades de ; além de duas amostras circulares, com e sem dessimetrização planar. Observamos que três amostras apresentam estatísticas GOE, uma 2GOE, uma semi-Poisson, uma Poisson com perda de níveis, e outra aparentemente intermediária entre a GOE e a 2GOE, que nao foi possível classificar. A qualidade dos dados também permitiu a obtenção das energias dos espectros, onde obtivemos resultados coerentes com a classificação a / We have built an experimental apparatus to study acoustic resonators which have been considered as classical analogs of quantum billiards. The equipment was able to keep the stability during several days, which is a requirement to the precise eigenfrequency measurements allowing a characterization of the systems. We have characterized 7 samples made of aluminum plates with thickness smaller than 2 mm having the following geometries: two Sinai\'s stadiums (with and without planar symmetry), an equilateral triangle, a rectangle triangle, and a scalene triangle with three acute and irrational angles, and two circular shaped samples, with and without planar symmetry. We observed that three of the samples followed the GOE statistics (the asymmetrical Sinai stadium, the rectangle triangle and the scalene one). The asymmetrical Sinai stadium was described by 2GOE statistics, the equilateral triangle by the semi-Poisson, the symmetrical circle by a Poisson with missing levels and the asymmetrical circle has statistics apparently between 1GOE and 2GOE which was not possible to classify. The high quality of data allowed us to calculate the spectra energies and we found these results compatible with the previous one.

Using a near-field array of acoustic resonators, it is possible to modify a focused pressure field and enforce a spatial frequency corresponding to the resonator array spacing. This higher spatial frequency makes it possible to focus and image with a resolution that is better than if the focusing were in free space. This near-field effect is caused by the phase shifting properties of resonators and, specifically, the delayed phase found in waves with a temporal frequency lower than that of the resonators in the array. Using time reversal, arrays of resonators are explored and the subwavelength focusing is used to describe the ability to image subwavelength features. A one-dimensional equivalent circuit model accurately predicts this interaction of the wave field with an array of resonators and is able to model the aggregate effect of the phononic crystal of resonators while describing the fine spatial details of individual resonators. This model is validated by a series of COMSOL full-wave simulations of the same system. The phase delay caused by a single resonator is explored in a simple experiment as well as in the equivalent circuit model. A series of experiments is conducted with a two-dimensional array of resonators and complex images are produced which indicate the ability to focus complex sources with better resolution.

Depuis quelques décennies, la technologie de contrôle de la fréquence a été au coeur de l'électronique des tempsmodernes grâce à son vaste domaine d'applications dans les systèmes de communication, les ordinateurs, les systèmesde navigation ou de défense militaire. Les dispositifs temps-fréquence fournissent des stabilités de fréquence et despuretés spectrales élevées dans le domaine de la stabilité court-terme. L'amélioration de la performance de cesdispositifs reste un grand défi pour les chercheurs. La réduction du bruit afin d'augmenter cette stabilité court-terme etd'éviter les commutations non souhaitées entre les canaux est donc très souhaitable. Il est communément admis que lalimitation fondamentale à cette stabilité court-terme est due au bruit flicker de fréquence des résonateurs. Dans cemanuscrit, un premier chapitre rappelle quelques faits de base sur l’acoustique, la cristallographie et les définitions dudomaine temps-fréquence nécessaires à l’étude des résonateurs et oscillateurs ultra-stables. Le deuxième chapitre estconsacré à un résumé de la littérature sur le bruit de fréquence en 1/f. Ensuite, le troisième chapitre concerne nos étudessur le modèle quantique de bruit en 1/f du Pr. Handel, qui, bien que critiqué par beaucoup, est encore le seul qui fournitune estimation de l'amplitude de plancher de bruit en 1/f et qui n'est pas infirmé par les données expérimentales. Dans lequatrième chapitre, une autre approche, basée sur le théorème de fluctuation-dissipation, est utilisée afin de mettre descontraintes numériques sur un modèle de bruit en 1/f causé par une dissipation interne (ou de structure) proportionnelleà l'amplitude, et non à la vitesse. Le dernier chapitre est consacré aux résultats expérimentaux. Le design et lesparamètres du résonateur ultra-stable utilisé lors de cette étude sont décrits. Les mesures de bruit de phase sur plusieurslots de résonateurs sont données. Les mesures des paramètres de résonateur ont été effectuées à basse température afinde les corréler avec les résultats de bruit. Afin d'évaluer rapidement la qualité des différents résonateurs, une autreapproche dans le domaine temporel a été testée. Elle utilise des oscillations pseudo-périodiques transitoires mettant lesoscilloscopes numériques actuellement disponibles à leurs limites de capacité. Enfin, les conclusions et perspectivessont présentées. / Since a few decades, frequency control technology has been at the heart of modern day electronics due to its huge areaof applications in communication systems, computers, navigation systems or military defense. Frequency controldevices provide high frequency stabilities and spectral purities in the short term domain. However, improvement of theperformance of these devices, in terms of frequency stability, remains a big challenge for researchers. Reducing noise inorder to increase the short term stability and avoid unwanted switching between channels is thus very desirable. It iscommonly admitted that the fundamental limitation to this short-term stability is due to flicker frequency noise in theresonators. In this manuscript, a first chapter recalls some basic facts about acoustic, crystallography and definitions oftime and frequency domain needed to explore ultra-stable resonators and oscillators. The second chapter is devoted to asummary of the literature on flicker frequency noise. Then, the third chapter concerns our studies on Handel’s quantum1/f noise model, which although criticized by many, is still the only one that provides an estimation of the flooramplitude of 1/f noise that is not invalidated by experimental data. In the fourth chapter, another approach, based on thefluctuation-dissipation theorem, is used in order to put numerical constraints on a model of 1/f noise caused by aninternal (or structural) dissipation proportional to the amplitude and not to the speed. The last chapter is devoted toexperimental results. An ultra-stable resonator used during this study is described. Phase noise measurements on severalbatches of resonators are given. Measurements of resonator parameters have been done at low temperature in order tocorrelate them with noise results. Another approach with a procedure that use transient pseudo periodic oscillations andput to their limits the capacities of presently available digital oscilloscopes, is presented, in order to assess rapidly thequality of various resonators. Finally, conclusions and perspectives are given.